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ROHM Semiconductor 2SB1689T106 TRANS PNP 12V 1.5A UMT3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SB1689T106	Cut Tape	6,974		1	1 $0.62 10 $0.386 100 $0.62 1000 $0.16719 10000 $0.16719	Buy Now
	2SB1689T106	Digi-Reel	6,974		1	1 $0.62 10 $0.386 100 $0.62 1000 $0.16719 10000 $0.16719	Buy Now
	2SB1689T106	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.14253	Buy Now
Mouser Electronics	2SB1689T106		3,083			1 $0.59 10 $0.382 100 $0.187 1000 $0.161 10000 $0.107	Buy Now
Verical	2SB1689T106		10,830		91	1 - 10 - 100 $0.345 1000 $0.2 10000 $0.155	Buy Now
	2SB1689T106		6,000		232	1 - 10 - 100 - 1000 $0.5782 10000 $0.5782	Buy Now
	2SB1689T106		2,956		232	1 - 10 - 100 - 1000 $0.3157 10000 $0.3064	Buy Now
RS	2SB1689T106	Bulk			40	1 - 10 - 100 $0.128 1000 $0.115 10000 $0.102	Get Quote
Quest Components	2SB1689T106		7,164			1 $0.615 10 $0.615 100 $0.615 1000 $0.615 10000 $0.1845	Buy Now

TME	2SB1689T106				1	1 $0.409 10 $0.194 100 $0.129 1000 $0.105 10000 $0.084	Get Quote
Ameya Holding Limited	2SB1689T106		3,000		1	1 $0.42 10 $0.319 100 $0.173 1000 $0.13 10000 $0.112	Buy Now
ComSIT USA	2SB1689T106		2,822			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	2SB1689T106			24 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip1Stop	2SB1689T106	Cut Tape	10,830			1 - 10 - 100 $0.236 1000 $0.16 10000 $0.124	Buy Now
CoreStaff Co Ltd	2SB1689T106		6,000			1 $0.497 10 $0.407 100 $0.216 1000 $0.123 10000 $0.123	Buy Now
	2SB1689T106		2,956			1 $0.497 10 $0.407 100 $0.216 1000 $0.123 10000 $0.123	Buy Now

2SB168 Datasheets (25)

Part	Manufacturer	Description	Datasheet Type	PDF
2SB168	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SB168	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SB168	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SB168	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SB168	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SB168	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SB168	Unknown	Cross Reference Datasheet	Scan	PDF
2SB1683	Sanyo Semiconductor	General-Purpose Amplifier Transistors	Original	PDF
2SB1685	Sanken Electric	TRANS DARLINGTON PNP 110V 6A 3TO-3P	Original	PDF
2SB1686	Sanken Electric	TRANS DARLINGTON PNP 110V 6A 3TO-220F	Original	PDF
2SB1686	Sanken Electric	Silicon PNP Epitaxial Planar Transistor	Scan	PDF
2SB1686O	Sanken Electric	TRANS DARLINGTON PNP 110V 6A 3TO-220F	Original	PDF
2SB1686P	Sanken Electric	TRANS DARLINGTON PNP 110V 6A 3TO-220F	Original	PDF
2SB1686Y	Sanken Electric	TRANS DARLINGTON PNP 110V 6A 3TO-220F	Original	PDF

2SB1687	Sanken Electric	TRANS DARLINGTON PNP 110V 6A 3TO-3P	Original	PDF
2SB1687O	Sanken Electric	TRANS DARLINGTON PNP 110V 6A 3TO-3P	Original	PDF
2SB1687P	Sanken Electric	TRANS DARLINGTON PNP 110V 6A 3TO-3P	Original	PDF
2SB1687Y	Sanken Electric	TRANS DARLINGTON PNP 110V 6A 3TO-3P	Original	PDF
2SB1688	Hitachi Semiconductor	Silicon PNP Transistor	Original	PDF
2SB1688	Renesas Technology	Silicon PNP Epitaxial High voltage amplifier	Original	PDF

2SB168 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: FML9 Transistors General purpose transistor isolated transistor and diode FML9 A 2SB1689 and a RB461F are housed independently in a UMT package. !External dimensions (Units : mm) !Applications DC / DC converter Motor driver 2.9 1.1 (3) (4) 0.95 0.95 1.9	Original	2SB1689 RB461F SC-74A	PDF
2SB1689 Abstract: T106 Text: 2SB1689 Transistors Genera purpose amplification −12V, −1.5A 2SB1689 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 1.25 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low.	Original	2SB1689 -200mV -500mA -25mA SC-70 OT-323 2SB1689 T106	PDF
2SD2641 Abstract: 2SB1685 Text: Equivalent circuit 2SD2641 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1685 Unit V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 IC 6 V V(BR)CEO IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA	Original	2SD2641 2SB1685) 100max 110min 5000min 60typ 55typ 2SD2641 2SB1685	PDF
2SD2643 Abstract: 2SB1687 transistor 2SB1687 Text: C Equivalent circuit 2SD2643 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1687 110 V ICBO VCEO 110 V IEBO VEBO 5 V V(BR)CEO IC 6 (Ta=25°C) Conditions Ratings Unit VCB=110V 100max µA VEB=5V 100max µA IC=30mA 110min V A hFE VCE=4V, IC=5A	Original	2SD2643 2SB1687) 100max FM100 110min 5000min 60typ 55typ 2SD2643 2SB1687 transistor 2SB1687	PDF
2SD2642 Abstract: 2SB1686 FM20 2SD2642 equivalent transistor 2SB1686 Text: 7 0 Ω E 2SB1686 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2642) V ICBO VCEO –110 V IEBO VEBO –5 V V(BR)CEO IC –6 A IB –1 PC Tj Ratings Unit VCB=–110V –100max µA –100max µA –110min V hFE VCE=–4V, IC=–5A 5000min∗	Original	2SB1686 2SD2642) 100max 5000min 100typ 110typ 110min O220F) 2SD2642 2SB1686 FM20 2SD2642 equivalent transistor 2SB1686	PDF
2SB1688 Abstract: 2SB1688TZ-E PRSS0003DA-A SC-43A Text: 2SB1688 Silicon PNP Epitaxial High voltage amplifier REJ03G0679-0300 Previous ADE-208-975A Rev.3.00 Aug.10.2005 Features • High breakdown voltage VCEO = -300V min Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector	Original	2SB1688 REJ03G0679-0300 ADE-208-975A) -300V PRSS0003DA-A 2SB1688 2SB1688TZ-E PRSS0003DA-A SC-43A	PDF
IT0316 Abstract: 2SB1683 2SD2639 Text: Ordering number : ENN6960 2SB1683 / 2SD2639 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features • • Package Dimensions Wide ASO because of on-chip ballast resistance.	Original	ENN6960 2SB1683 2SD2639 2SB1683 2010C 2SD2639] IT0316 2SD2639	PDF
2SB1682 Abstract: B1682 2SD2636 Text: 2SB1682 TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington power transistor 2SB1682 Unit: mm ○ Power Amplifier Applications ○ High-Power Switching Applications • High-breakdown voltage: VCEO = −160 V (min) • Complementary to 2SD2636	Original	2SB1682 2SD2636 100ms* 2SB1682 B1682 2SD2636	PDF
2SB1689 Abstract: RB461F Text: FML9 Transistors General purpose transistor isolated transistor and diode FML9 A 2SB1689 and a RB461F are housed independently in a UMT package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver 2.9 1.1 (3) (4) 0.95 0.95 1.9 (5)	Original	2SB1689 RB461F SC-74A	PDF
Untitled Abstract: No abstract text available Text: FML9 Transistors General purpose transistor isolated transistor and diode FML9 A 2SB1689 and a RB461F are housed independently in a UMT package. External dimensions (Unit : mm) Applications DC / DC converter Motor driver 2.9 1.1 (3) (4) 0.95 0.95 1.9 (5)	Original	2SB1689 RB461F SC-74A	PDF
Untitled Abstract: No abstract text available Text: 2SB1688 Silicon PNP Epitaxial High voltage amplifier REJ03G0679-0300 Previous ADE-208-975A Rev.3.00 Aug.10.2005 Features • High breakdown voltage VCEO = -300V min Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector	Original	2SB1688 REJ03G0679-0300 ADE-208-975A) -300V PRSS0003DA-A	PDF
Untitled Abstract: No abstract text available Text: FML9 Transistors General purpose transistor isolated transistor and diode FML9 A 2SB1689 and a RB461F are housed independently in a UMT package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver 2.9 1.1 (3) (4) 0.95 0.95 1.9 (5)	Original	2SB1689 RB461F SC-74A	PDF
Untitled Abstract: No abstract text available Text: 2SB1689 Transistors Genera purpose amplification −12V, −1.5A 2SB1689 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 1.25 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low.	Original	2SB1689 200mV 500mA SC-70 OT-323	PDF
Untitled Abstract: No abstract text available Text: 2SB1682 TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington power transistor 2SB1682 Unit: mm ○ Power Amplifier Applications ○ High-Power Switching Applications • High-breakdown voltage: VCEO = −160 V (min) • Complementary to 2SD2636	Original	2SB1682 2SD2636 2-16C1A 100ms*	PDF

Untitled Abstract: No abstract text available Text: 2SB1688 Silicon PNP Epitaxial High voltage amplifier REJ03G0679-0300 Previous ADE-208-975A Rev.3.00 Aug.10.2005 Features • High breakdown voltage VCEO = -300V min Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector	Original	2SB1688 REJ03G0679-0300 ADE-208-975A) -300V PRSS0003DA-A	PDF
2SB1683 Abstract: 2SD2639 12AAF NPN transistor Electronic ballast Text: Ordering number : ENN6960 2SB1683 / 2SD2639 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features • • Package Dimensions Wide ASO because of on-chip ballast resistance.	Original	ENN6960 2SB1683 2SD2639 2SB1683 2010C 2SD2639] 2SD2639 12AAF NPN transistor Electronic ballast	PDF
Untitled Abstract: No abstract text available Text: 2SB1689 Transistors Genera purpose amplification −12V, −1.5A 2SB1689 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 External dimensions (Unit : mm) Application Low frequency amplifier Driver 1.25 Features 1) A collector current is large. 2) Collector saturation voltage is low.	Original	2SB1689 200mV 500mA SC-70 OT-323	PDF
2SC4793 2sa1837 Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303 Text: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688	Original	2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC4793 2sa1837 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303	PDF
2sb1689 spice model Abstract: 4406 transistor "BF 430" 2SB168 2SB1689 BF 500 transistor BF-430 Model 430 95012 Text: SPICE PARAMETER 2SB1689 by ROHM TR Div. * 2SB1689 PNP BJT model * Date: 2006/12/14 .MODEL 2SB1689 PNP + IS=500.00E-15 + BF=430.25 + VAF=8.5496 + IKF=1.1522 + ISE=500.00E-15 + NE=1.7681 + BR=62.537 + VAR=100 + IKR=.95012 + ISC=791.42E-15 + NC=2.9288 + NK=.62728	Original	2SB1689 Q2SB1689 00E-15 42E-15 000E-3 668E-3 302E-12 215E-12 2sb1689 spice model 4406 transistor "BF 430" 2SB168 2SB1689 BF 500 transistor BF-430 Model 430 95012	PDF
2SB1689 Abstract: T106 Text: 2SB1689 Transistors Genera purpose amplification −12V, −1.5A 2SB1689 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 1.25 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low.	Original	2SB1689 -200mV -500mA -25mA SC-70 OT-323 2SB1689 T106	PDF
Untitled Abstract: No abstract text available Text: 2SB1689 Datasheet PNP -1.5A -12V Low Frequency Amplifier Transistors lOutline Parameter Value VCEO IC 12V 1.5A UMT3 Collector Base Emitter 2SB1689 SOT-323 SC-70 lFeatures 1) A Collecotr current is large.General Purpose. 2) Collector saturation voltage is low.	Original	2SB1689 OT-323 SC-70) 200mV 500mA, 2SD2652 R1102A	PDF
d2636 Abstract: 2SD2636 2SB1682 2sd26 Text: 2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2636 Power Amplifier Applications High-Power Switching Applications • High-breakdown voltage: VCEO = 160 V (min) • Complementary to 2SB1682 Unit: mm Maximum Ratings (Tc = 25°C)	Original	2SD2636 2SB1682 100ms* d2636 2SD2636 2SB1682 2sd26	PDF
2SB1688 Abstract: DSA003645 Text: 2SB1688 Silicon PNP Epitaxial High voltage amplifier ADE-208-975A Z 2nd. Edition Mar. 2001 Features • High breakdown voltage VCEO = -300V min Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB1688 Absolute Maximum Ratings (Ta = 25°C) Item Symbol	Original	2SB1688 ADE-208-975A -300V 2SB1688 DSA003645	PDF
60w af applications Sanyo Abstract: No abstract text available Text: Ordering n um ber: ENN6960 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 Is m I yo i 140V / 12A, AF 60W Output Applications Features Package Dimensions . Wide ASO because of’ on-chip ballast resistance.	OCR Scan	ENN6960 2SB1683 2SD2639 2SB1683 2010C 60w af applications Sanyo	PDF

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ROHM Semiconductor 2SB1689T106

2SB168 Datasheets (25)

2SB168 Datasheets Context Search

Untitled

2SB1689

2SD2641

2SD2643

2SD2642

2SB1688

IT0316

2SB1682

2SB1689

Untitled

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2SB1683

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2SC4793 2sa1837

2sb1689 spice model

2SB1689

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d2636

2SB1688

60w af applications Sanyo