2SB904
Abstract: No abstract text available
Text: Ordering number:1022A PNP/NPN Epitaxial Planar Silicon Transistors 2SB904/2SD1213 30V/12A High-Speed Switching Applications Applications Package Dimensions • Large current switching of relay drivers, high-speed inverters, converters. unit:mm 2022A [2SB904/2SD1213]
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2SB904/2SD1213
0V/12A
2SB904/2SD1213]
2SB904
2SB904
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2SB904
Abstract: 2SD1213
Text: Product Specification www.jmnic.com 2SD1213 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Low collector-to-emitter saturation voltage : VCE sat = 0.4V(max.) ・Large current capacity. ・Complement to type 2SB904 APPLICATIONS ・Large current switching of relay drivers,
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2SD1213
2SB904
2SB904
2SD1213
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2SD1213
Abstract: 2SB904
Text: SavantIC Semiconductor Product Specification 2SD1213 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Low collector saturation voltage ·Large current capacity. ·Complement to type 2SB904 APPLICATIONS ·Large current switching of relay drivers,
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2SD1213
2SB904
2SD1213
2SB904
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2SB904
Abstract: 2SD1213
Text: SavantIC Semiconductor Product Specification 2SB904 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD1213 ·Low collector saturation voltage ·Large current capacity APPLICATIONS ·Large current switching of relay drivers,
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2SB904
2SD1213
2SB904
2SD1213
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2SD1213
Abstract: 2SB904 ITR08684
Text: Ordering number:ENN1022A PNP/NPN Epitaxial Planar Silicon Transistors 2SB904/2SD1213 30V/12A High-Speed Switching Applications Applications Package Dimensions • Large current switching of relay drivers, high-speed inverters, converters. unit:mm 2022A [2SB904/2SD1213]
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ENN1022A
2SB904/2SD1213
0V/12A
2SB904/2SD1213]
2SB904
2SD1213
2SB904
ITR08684
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2SB904
Abstract: 2SD1213
Text: Inchange Semiconductor Product Specification 2SB904 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD1213 ·Low collector saturation voltage ·Large current capacity APPLICATIONS ·Large current switching of relay drivers,
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2SB904
2SD1213
2SB904
2SD1213
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2SD1213
Abstract: 2SD121 2SB904
Text: Inchange Semiconductor Product Specification 2SD1213 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Low collector saturation voltage ・Large current capacity. ・Complement to type 2SB904 APPLICATIONS ・Large current switching of relay drivers,
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2SD1213
2SB904
2SD1213
2SD121
2SB904
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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2SB909
Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125
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2SB901
2SB902
2SB903
2SB904
2SB905
2SB906
2SB907
2SB908
2SB909
2SB910
2SB909
2SB971
2SB978
2sb911
2SB901
2SB917
2SB918
2SB983
2SD1347
2SB902
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
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2SB927
Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M
Text: - 66 - T a = 2 5 cC , *EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc* w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O
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2SB903
2SB904
2SB905
2SB906
2SB907
2SB908
2SB909M
2SB930
2SD1253A
2SD1254
2SB927
2SB930
2SB813
2SB903
2SB904
2SB905
2SB907
2SB908
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 1022A WNO.1022A i 2SB904/2SD1213 PNP/NPN Epitaxial Planar Silicon Transistors SA iY O I 30V/20A High-Speed Switching Applications Use • Large current switching o f relay drivers, high-speed inverters, converters Features • Low collector-to-emitter saturation voltage: VcE sat =—10.5V(PNP), 0.4(NPI\I) max.
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2SB904/2SD1213
0V/20A
2SB904
7W07b
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Untitled
Abstract: No abstract text available
Text: Continued from previous page Electrical characteristics T a = 25 t Absolute m uknum ratings hreevcEic VC Blnt) nux 0 1C • IB Type No. type AppRcatloas VCBO (V ) VCEO M 1C (A ) PC (W ) (8 > VCE(ul) max GnV) 1C (A ) IB (m A) hFE VCE (V ) frevcE-ic 1C (A )
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2SA1470
T0220ML
2SA1471
2SB1134
2S02176
2SD2261
2SB888
2SD1111
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2SB1205
Abstract: 2S81119 2Sk222 2sa128
Text: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf
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TQ220ML
T0220ML
T03PB
2SB1205
2S81119
2Sk222
2sa128
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2SD1206
Abstract: 2SD1214 2SD1206 R 2SB889 2sn121 2SD1198 2SD1198A 2SD1199 2SD1200 2SD1205A
Text: - 2 38 - Ta=25'C. *EP(áTc=25‘ C M 03 tr -/N u •CEO (V) 2SD1198 (V) (A) [*EPfátyp{¡f] VcB (V) (min) (max) Ic/ I Vc e (V) (max) (V) e (A) (V) 4000 40000 10 1 1.8 2.2 1 i 0. 1 45 4000 40000 10 1 1.8 2.2 1 0. 001 0.1 20 400 2000 10 0. 002 0.2 0.01 0. 001
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2SD1198
2SD1198A
2SD1199
2SD1200
2SD120S
2SD1205A
2SD1206
SC-64
2SD1222
2SB908
2SD1214
2SD1206 R
2SB889
2sn121
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2SD1213
Abstract: e1aj 2SB1511 2SB827 2SB828 2SB829 2SB904 2SD1063 2SD1064 2SD1065
Text: sa H y o Low-Saturation Voltage Series T0-3PB,ML Package A p p l F e a t u r e s * Low V C E( sa t ) . ♦ H i g h l y r e s i s t a n t to breakdown be c a use o f wide ASO. ♦ F a s t s w i t c h i n g speed. i c a t i o n s * R elay d r iv e r s . ♦ H ig h -sp e e d i n v e r t e r s .
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2SB904
2SD1213
2SB1511
2SD2285
0V/60V
2SB827
2SD-126
T0-126LP
T0-220CI
T0-220ML
e1aj
2SB828
2SB829
2SD1063
2SD1064
2SD1065
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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Untitled
Abstract: No abstract text available
Text: SOfiYO Low“Saturati on Voltage Seri e s T0-3PB,ML Package F e a t u r e s ♦ L o w VCE(sat). ♦ H i g h l y resistant to breakdown because of wide ASO. ♦ F a s t switching speed. A p p l i c a t i o n s * Relay drivers. ♦ H i g h - s p e e d inverters.
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2SB904
2SB1511
2SD2285
2SB1230
2SD1840
2SB1231
2SD1841
2SB1232
T0-220
T0-220ML
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transistor 3095
Abstract: 73TA
Text: TK732XX Power Conversion ICs LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Up to 5 A Output Current Capability With External ■ Battery Powered Systems PNP Transistor ■ Cellular/Cordless Telephones ■ Internal Short Circuit Protection ■ Radio Control Systems
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TK732XX
TK732xx
TK732xxMCLH)
transistor 3095
73TA
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2SA1301 TOSHIBA
Abstract: b962 2SA1301 2SB1482 2SB1487 Toshiba 2SB754 2SA1467 2SB798 2SB897 2SA1213
Text: 74 - w. € tt Manuf. T y p e No. 2SB 1507 2SB 1508 2 SB 1509 2SB 1510 2SB 1511 = W H # H £ = n h # 2SB 1512 O — A 2 SB 1513 □ — A 2 SB 1514 □— 2SB 1515 □ — A 2 SB 1516 2 SB 2 SB . H ^ SANYO 2SBS27 1527 2SB 1528 2 SB 1529 2SB1439 2SB1433 2SA1761
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2sb827
2sb754
2sa1185
2sb828
2sb1154
2sb829
2sbi155
2sb1214
2sb1418
2sb904
2SA1301 TOSHIBA
b962
2SA1301
2SB1482
2SB1487
Toshiba 2SB754
2SA1467
2SB798
2SB897
2SA1213
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Transistor TT 2140
Abstract: lithium ion battery charger
Text: rSJTOKO TK732xx LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Up to 5 A Output Current Capability With External PNP Transistor Battery Powered Systems Cellular Telephones ■ Internal Short Circuit Protection Cordless Telephones ■ Excellent Load Regulation
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TK732xx
TK732xx
1998TokOi
xx-TK732xx
Transistor TT 2140
lithium ion battery charger
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B1115
Abstract: mrf 510 lt 8220 LPRO lti 1302 TK732xxM 2SB1115 400H TK73200 TK732XX
Text: IC. DATA SHEET T K 7 3 2 XXM li fio tti M m & ± 2 % or ± 60mV\ i f# g & ± 3 3 m V xm m im m , A tü ^ « Œ H ^ /h è < , n €K £T W 2& iiJffltti3te£t'. tf o n / o f f 3 > h □ - ; ! / # # , O F F m < D m m t W > (O .U A Max) 7 X 'J -zmfcitW'Po
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T145-8585
T350-2281
TK732xx
s0t23l-8
GC3-E008
B1115
mrf 510
lt 8220
LPRO
lti 1302
TK732xxM
2SB1115
400H
TK73200
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