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    2SB935 Search Results

    2SB935 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB935 Kexin Silicon PNP Epitaxial Planar Type Original PDF
    2SB935 Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB935 TY Semiconductor Silicon PNP Epitaxial Planar Type - TO-252 Original PDF
    2SB935 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB935 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB935 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB935 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB935 Unknown Cross Reference Datasheet Scan PDF
    2SB935 Panasonic Silicon Medium Power Transistors Scan PDF
    2SB935 Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Scan PDF
    2SB935A Kexin Silicon PNP Epitaxial Planar Type Original PDF
    2SB935A Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB935A TY Semiconductor Silicon PNP Epitaxial Planar Type - TO-252 Original PDF
    2SB935A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB935A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB935A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB935A Unknown Cross Reference Datasheet Scan PDF
    2SB935A Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Scan PDF
    2SB935A Panasonic Silicon Medium Power Transistors Scan PDF

    2SB935 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB935

    Abstract: 2SB935A
    Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB935A TO-252 +0.1 0.80-0.1 +0.1 0.60-0.1 2.3 2.30 +0.8 0.50-0.7 3 .8 0 +0.15 1.50 -0.15 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High-speed switching. Unit: mm +0.1 -0.1 +0.15 5.55 -0.15 6.50 +0.2 5.30-0.2 +0.15


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    PDF 2SB935A O-252 2SB935 2SB935A

    Untitled

    Abstract: No abstract text available
    Text: 2SB935P Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)40 I(C) Max. (A)10 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)600m @I(C) (A) (Test Condition)7


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    PDF 2SB935P Freq150MÃ

    2SB935

    Abstract: 2SB935A
    Text: Power Transistors 2SB935, 2SB935A Silicon PNP epitaxial planar type 3.4±0.3 8.5±0.2 Unit: mm 6.0±0.5 1.0±0.1 M Di ain sc te on na tin nc ue e/ d • Features 1.5±0.1 10.0±0.3 For low-voltage switching 2.0 10.5min. 0.8±0.1 0.5max. 2.54±0.3 Absolute Maximum Ratings TC=25˚C


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    PDF 2SB935, 2SB935A 2SB935 2SB935 2SB935A

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB935A TO-252 +0.1 0.80-0.1 +0.1 0.60-0.1 2.3 2.30 +0.8 0.50-0.7 3 .8 0 +0.15 1.50 -0.15 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High-speed switching. Unit: mm +0.1 -0.1 +0.15 5.55 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 0.127 max +0.25 2.65 -0.1


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    PDF 2SB935A O-252

    2SB935

    Abstract: 2SB935A
    Text: Power Transistors 2SB935, 2SB935A Silicon PNP epitaxial planar type 3.4±0.3 8.5±0.2 Unit: mm 6.0±0.5 1.0±0.1 0.8±0.1 0.5max. 2.54±0.3 Absolute Maximum Ratings TC=25˚C 2SB935 –50 –20 VCEO emitter voltage 2SB935A –40 V VEBO –5 V Peak collector current


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    PDF 2SB935, 2SB935A 2SB935 160mA 2SB935 2SB935A

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB935 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1


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    PDF 2SB935 O-252 ICP50

    2SB935

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB935 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15


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    PDF 2SB935 O-252 2SB935

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB935, 2SB935A Silicon PNP epitaxial planar type 3.4±0.3 8.5±0.2 Unit: mm 6.0±0.5 1.0±0.1 • Features Low collector to emitter saturation voltage VCE sat High-speed switching N type package enabling direct soldering of the radiating fin to


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    PDF 2SB935, 2SB935A 2SB935

    2SB909

    Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125


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    PDF 2SB901 2SB902 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909 2SB910 2SB909 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902

    b0246

    Abstract: PH2955T 045H2 SMCP055 SGS-Ates B0246A B0-246 MJE2955T ST MJE2901K MJE2955K
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 SOT3805 SOT3825 SOT3825 SOT3825 SOT3105 SOT3115 SOT3125 ST29051 ~gH~g~ 35 40 SOT3807 SOT3827 SOT3827 SOT3827 2SB871A 2SB936A 2SB948A 2SB896A ~~~~~~~ 45 50 SK3183 BOW22 B0664 B0664 B0246 B0206


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    PDF OT3116 OT3126 MJE2901 MJE2901K MJE2901T 2N3789 2N3791 B0246A B0246A O-111 b0246 PH2955T 045H2 SMCP055 SGS-Ates B0-246 MJE2955T ST MJE2955K

    2SB935

    Abstract: 2SB935A
    Text: Power T ransistors 2SB935, 2SB935A 2SB935, 2SB935A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching • Features • Low collector-emitter saturation voltage V ceissh • High speed switching ' • “N Type” package configuration with a cooling fin for direct soldèring


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    PDF 2SB935, 2SB935A 2SB935 2SB930/A) 2SB935A

    2SB935

    Abstract: 2SB935A
    Text: Power Transistors 2SB935, 2SB935A 2SB935, 2SB935A S ilicon P N P E p ita x ia l P la n a r Type Package Dimensions Low Voltage Switching Unit ! mm • Features 2SB935 Collectorbase voltage 2SB935A 2SB935 Collectoremitter voltage 2SB935A Emitter-base voltage ,s


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    PDF 2SB935, 2SB935A 2SB935 2SB935A 2SB930/A)

    2SD1539

    Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
    Text: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5


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    PDF O-126 O-202 T0-220 O-220F 2SA1605 2SC2258 2SC3063 2SC2923 2SC4714 2SC3942 2SD1539 d53 pnp transistor 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258

    K 2411

    Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
    Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type


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    PDF 3SK241 T0220F K 2411 k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


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    PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526

    A1534

    Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin


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    PDF T0-92 T092L: T0220F T0220 T092NL A1534 T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A

    2SC4714

    Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F


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    PDF O-126 D52SK, O-202 T0-220 O-220F 2SA1605 2SC2258 2SC3063 2SC2923 2SC4714 2SA1817 2SD1539 2SA1605 2SC2258 2SC3063 2SC3942 2SC3945 2SC4717

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    B1548

    Abstract: 2SB1299A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200


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    PDF T0-220 O-220F 2SB954/A 2SB1052 2SD1480 2SD1265/A O-220E T0220D 2SB1169/A 2SB1170 B1548 2SB1299A

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


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    PDF 2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A

    2SB927

    Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M
    Text: - 66 - T a = 2 5 cC , *EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc* w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O


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    PDF 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M 2SB930 2SD1253A 2SD1254 2SB927 2SB930 2SB813 2SB903 2SB904 2SB905 2SB907 2SB908

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


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    PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    sa1306

    Abstract: 2SB793 2sb1370 2SA1306 2SB1186B 2SB1085B 2SA1770 2SA1175 2SA1306A 2SB1212
    Text: - m « Type No. 2SB m 8 6 > 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 S8 2SB 2SB 2SB 2 S8 2SB 2SB 2SB 2SB tt □—A □- A 1186A 118 7 / □— A □— A 1188 / □—A 1189 y 119 0 fé T 113 0A *2 T 1191


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    PDF 2SA1606 SA1306 SA1606 2SA1306 2SB940A 2SB1015 2SB941 2SB1370 2SBU23 2SA1203 sa1306 2SB793 2sb1370 2SA1306 2SB1186B 2SB1085B 2SA1770 2SA1175 2SA1306A 2SB1212

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


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    PDF 10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d