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    2SB941

    Abstract: 2SB941 datasheet 2SB941A 2SD1266 2SD1266A 1405Q
    Text: Power Transistors 2SB941, 2SB941A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1266 and 2SD1266A Unit: mm • Features Parameter TC=25˚C Symbol Collector to 2SB941 base voltage 2SB941A Collector to 2SB941 Ratings


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    PDF 2SB941, 2SB941A 2SD1266 2SD1266A 2SB941 2SB941 2SB941 datasheet 2SB941A 2SD1266A 1405Q

    2SB941

    Abstract: 2SB941 P 2sb941a 2SB941 Q 1266a
    Text: JMnic Product Specification 2SB941 2SB941A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complementary to type 2SD1266/1266A APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION


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    PDF 2SB941 2SB941A O-220Fa 2SD1266/1266A O-220Fa) 2SB941 2SB941 P 2sb941a 2SB941 Q 1266a

    2SB941

    Abstract: 2sb941a
    Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB941 2SB941A DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Complementary to type 2SD1266/1266A APPLICATIONS ·For low-frequency power amplification PINNING


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    PDF 2SB941 2SB941A O-220Fa 2SD1266/1266A O-220Fa) 2SB941 2sb941a

    2SB941

    Abstract: 2SB941 datasheet 1266a 2SB941A 2SB941 P
    Text: Inchange Semiconductor Product Specification 2SB941 2SB941A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complementary to type 2SD1266/1266A APPLICATIONS ・For low-frequency power amplification


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    PDF 2SB941 2SB941A O-220Fa 2SD1266/1266A O-220Fa) 2SB941 2SB941 datasheet 1266a 2SB941A 2SB941 P

    2SB941

    Abstract: 2SD1266 2sB941 transistor 2SB941 Q
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB941 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -1.2V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1266 APPLICATIONS ·Designed for low-frequency power amplifications.


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    PDF 2SB941 2SD1266 10MHz 2SB941 2SD1266 2sB941 transistor 2SB941 Q

    2SD1266

    Abstract: 2SB941 2SB941A 2SD1266A
    Text: Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A • Features Parameter 2SD1266 base voltage 2SD1266A Collector to 2SD1266 Ratings 60 VCBO 60 VCEO emitter voltage 2SD1266A


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    PDF 2SD1266, 2SD1266A 2SB941 2SB941A 2SD1266 2SD1266 2SB941A 2SD1266A

    2SD1266

    Abstract: 2SD1266A 30ma 40v npn 2SB941 datasheet
    Text: Inchange Semiconductor Product Specification 2SD1266 2SD1266A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB941/941A


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    PDF 2SD1266 2SD1266A O-220Fa 2SB941/941A O-220Fa) 2SD1266 2SD1266A 30ma 40v npn 2SB941 datasheet

    2SD1266

    Abstract: 2SD1266A 2SB941 P
    Text: SavantIC Semiconductor Product Specification 2SD1266 2SD1266A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB941/941A


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    PDF 2SD1266 2SD1266A O-220Fa 2SB941/941A O-220Fa) 2SD1266 2SD1266A 2SB941 P

    transistor 12v 1A NPN

    Abstract: 2SB941 2SD1266
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1266 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = 1.2V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB941


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    PDF 2SD1266 2SB941 10MHz transistor 12v 1A NPN 2SB941 2SD1266

    2SD1266

    Abstract: 2SD1266A 2SB0941 2SB941 2SB941A
    Text: Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0941 2SB941 and 2SB941A (2SB941A) Parameter Symbol Rating Unit VCBO 60 V Collector to base voltage 2SD1266 Collector to emitter voltage


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    PDF 2SD1266, 2SD1266A 2SB0941 2SB941) 2SB941A 2SB941A) 2SD1266 2SD1266 2SD1266A 2SB0941 2SB941 2SB941A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB0941, 2SB0941A 2SB941, 2SB941A Silicon PNP epitaxial planar type Unit: mm 5.5±0.2 2.7±0.2 16.7±0.3 φ 3.1±0.1 • Absolute Maximum Ratings TC = 25°C Collector to base voltage 2SB0941 Collector to emitter voltage 2SB0941 2SB0941A


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    PDF 2SB0941, 2SB0941A 2SB941, 2SB941A) 2SD1266 2SD1266A 2SB0941A 2SB0941

    2SB941

    Abstract: 2SB941A 2SD1266 2SD1266A
    Text: Powér Transistors 2SB941, 2SB941A 2SB941, 2SB941A Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SD 1266, 2SD 1266A Unit ! mm 4.4max. 2.9max. • Features • H igh DC c u r re n t gain Iife and good lin earity


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    PDF 2SB941, 2SB941A 2SD1266, 2SD1266A 2SB941 2SB941A 2SD1266 2SD1266A

    2SB941

    Abstract: 2SB941A 2SD1266 2SD1266A 2SB941 Q
    Text: Powër Transistors 2SB941, 2SB941A 2SB941, 2SB941A Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SD 1266, 2SD 1266A U nit ! mm 4.4max. 5.7 max. • Features • H igh DC c u r re n t gain Ii f e and good lin earity


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    PDF 2SB941, 2SB941A 2SD1266, 2SD1266A 2SB941 2SB941A 2SD1266 2SD1266A 2SB941 Q

    2SD1266 R

    Abstract: 2SD1266 2SB941 2SB941A 2SD12 2SD126 2SD1266A VCE-80
    Text: Power Transistors 2SD1266, 2 SDÌ 2Ó6A S D 1266, 2S D 1266A Silicon NPN Triple-Diffused Planar Type 2 Package Dimensions Power Amplifier Complementary Pair with 2SB941, 2SB941A • Features Unit ! mm 4.4max. 10.2max. 5.7max. 2.9max »I • High DC current gain I i f e and good linearity


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    PDF 2SD1266, 2SD1266A 2SB941, 2SB941A 2SD1266 2SD126Ã 2SD1266 R 2SB941 2SB941A 2SD12 2SD126 2SD1266A VCE-80

    UMS1

    Abstract: 2sb941 nec 772 1866 2sa158 2sa1727 2SB1308 2SA1400-Z 2SA1588 2SA1745
    Text: - m € T y p e No. a € Manuf. 2SA 1865 = z m SAN YO B m NEC ÍL H IT ACHI a i 2S A 1 7 4 5 2SA 1868 fé T 2S A 1 7 7 2 s 2 2SB1274 2SA 1873 K 2 2SA 1875 H * . 2SA 1878 2SA 1879 ffSTE 2SA 1881 ^ Z * 2 SA 1588 * ± a FUJITSU fò T MATSUSHITA — A ROHM 2 SB 1219


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    PDF 2SA1832 2S31462 2SB1462 2SA1745 2SA1588 2SB1475 2SB1219 2SA1772 2SA1400-Z UMS1 2sb941 nec 772 1866 2sa158 2sa1727 2SB1308 2SA1400-Z

    PU1501

    Abstract: PU4471 PU4135 PU7456 PU4000 PU4118 PU4128 apu4148 PU4444 PU3134
    Text: Transistore Selection Guide by Applications and Functions IPower Transistor Arrays Series Name PU3000 Series Equivalent Circuit Package (No.) Equivalent Circuit I I I ^''''\_Structure A p p lic a tio n ^ ^ General Example (N P N ) TT 2 s 5 Low VcE(sat) PUA3000


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    PDF PU3000 PUA3000 PU4000 PU3110 PU3210 PU4110 PU4210 PU4410 PU4510 PU4310 PU1501 PU4471 PU4135 PU7456 PU4118 PU4128 apu4148 PU4444 PU3134

    Pu4128

    Abstract: PU4471 PU42C26
    Text: Transistore Selection Guide by Applications and Functions I Power Transistor Arrays Series Name PU3000 Series Equivalent Circuit Package (No.) T 3 5 ^ ^ \S t r u c t u r e « PU4000 Series 8 Pin 'SIP Package (D72) (D73) Equivalent Circuit 7 PUA3000 Series


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    PDF PU3000 PU4000 PUA3000 PU3110 PU3210 PU4110 PU4210 PU4410 PU4510 PU4310 Pu4128 PU4471 PU42C26

    2SB962

    Abstract: 2SD1288 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB941A 2SB942
    Text: - 68 T a = 2 5 cC , * T O T c = 2 5 t ; M % íí 2SB938A 2SB939 fâT 2SB939A ffl £ íé VcBO Vc e o (V) (V) Ic (D C ) (A) m Pc Pc* ICBO (W) (W) (max) (//A) VcB (V) % (min) fä (max) tí VcE (V) (T a = 2 5 ' C ) I c/ I e (A) [*EPIÍtypíS] (max) (V) PA/S»


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    PDF 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB947A 2SB951A 2SB952 2SB952A 2SB962 2SD1288 2SB941A 2SB942

    2SA1015

    Abstract: 2SA1358 2SA965 2SB1212 2SB560 sa1015 2SA934 2SA985 NEC 2SA1096 2SA385
    Text: - 6 - m % « tt T y p e No. Manuf. = í¥ SANYO TOSHIBA m NEC B ÎL HITACHI * 2SA 479 m S * * ac s * 2S A 480 y.- - * 2S A 482 * * 2 S A 4 8 3 *-' 2SB596 2SA985 2SB507 2SB596 2SA985 2SB856 2SA836 2SA 4 ? 3 ^ ' * 2SA 474 ^ * 2SA 475 * 2 S A 4 7 7 ír. * 2SA 478 ^


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    PDF SA1015 2SA385 2SA715 2SB941 2SB1064 2SA1015 2SA673 2SA1015 2SA1358 2SA965 2SB1212 2SB560 2SA934 2SA985 NEC 2SA1096

    2SA985 NEC

    Abstract: 2s8834 2SB56 2SB596 2SA985 toshiba 2sb555 2SB834 2SB508 2SB537 2SA836
    Text: s € tt T y p e No. 2SB 153 2SB 154 2SB 155 2SB 176 " 2SB 302 2SB 370 2SB 370A 2 Sß 434 , □ SS a X 3: SAN YO ^ M TOSHIBA s t NE C il H IT ACHI ±L 2SB 561 ±L 31 2 SB 561 T 4 ii Ä S 2SB 435 ^ 2SB 444 0 a a iz 2SB 492 - = # 2SB 496 iL 2SB 502 Ä ä 2SB 443


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    PDF 2SB561 2SB56 2SA836 2SB562 2SB507 ZSB834 2SA985 2SA985 NEC 2s8834 2SB56 2SB596 toshiba 2sb555 2SB834 2SB508 2SB537 2SA836

    2SB943

    Abstract: 2SD1268
    Text: 2SB943 Power Transistors 2SB943 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1268 •Features • • • • 2.9max. Low collector-emitter saturation voltage VcEisao Good linearity of DC current gain (I if e )


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    PDF 2SB943 2SD1268 2SB941/A) 2SD1268

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D52 * , D53) U Type (D41) MT2LType MT3 Type (D44) (D45) MT4 Type (D46) TO-202 (D54) T0-220(a) (D56) TO-220F


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    PDF O-126 O-202 T0-220 O-220F 2SC1398A 2SB1543 2SB1416 2SB1417 12SD2363 12SD2136

    2SA1949

    Abstract: 2SC5221 2SA1950 2C156 2SB1543 2SB1545 2SC2594 Complementary Darlington Audio Power Amplifier 2SD2412 2SD2404
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) P a c k a g e (No.) Application Functions U Type (D41) TO-126 (D52 * , D53) M T 2LT ype MT3 Type (D44) (D45) MT4 Type (D46) TO-202 (D54) T0-220(a)


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    PDF O-126 O-202 T0-220 O-220F 2SC1398A A2SB1573 2SD2407 2SB1543 12SD2363 2SB1416 2SA1949 2SC5221 2SA1950 2C156 2SB1545 2SC2594 Complementary Darlington Audio Power Amplifier 2SD2412 2SD2404

    2SC4714

    Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F


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    PDF O-126 D52SK, O-202 T0-220 O-220F 2SA1605 2SC2258 2SC3063 2SC2923 2SC4714 2SA1817 2SD1539 2SA1605 2SC2258 2SC3063 2SC3942 2SC3945 2SC4717