2SB941
Abstract: 2SB941 datasheet 2SB941A 2SD1266 2SD1266A 1405Q
Text: Power Transistors 2SB941, 2SB941A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1266 and 2SD1266A Unit: mm • Features Parameter TC=25˚C Symbol Collector to 2SB941 base voltage 2SB941A Collector to 2SB941 Ratings
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2SB941,
2SB941A
2SD1266
2SD1266A
2SB941
2SB941
2SB941 datasheet
2SB941A
2SD1266A
1405Q
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2SB941
Abstract: 2SB941 P 2sb941a 2SB941 Q 1266a
Text: JMnic Product Specification 2SB941 2SB941A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complementary to type 2SD1266/1266A APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION
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2SB941
2SB941A
O-220Fa
2SD1266/1266A
O-220Fa)
2SB941
2SB941 P
2sb941a
2SB941 Q
1266a
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2SB941
Abstract: 2sb941a
Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB941 2SB941A DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Complementary to type 2SD1266/1266A APPLICATIONS ·For low-frequency power amplification PINNING
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2SB941
2SB941A
O-220Fa
2SD1266/1266A
O-220Fa)
2SB941
2sb941a
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2SB941
Abstract: 2SB941 datasheet 1266a 2SB941A 2SB941 P
Text: Inchange Semiconductor Product Specification 2SB941 2SB941A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complementary to type 2SD1266/1266A APPLICATIONS ・For low-frequency power amplification
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2SB941
2SB941A
O-220Fa
2SD1266/1266A
O-220Fa)
2SB941
2SB941 datasheet
1266a
2SB941A
2SB941 P
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2SB941
Abstract: 2SD1266 2sB941 transistor 2SB941 Q
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB941 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -1.2V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1266 APPLICATIONS ·Designed for low-frequency power amplifications.
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2SB941
2SD1266
10MHz
2SB941
2SD1266
2sB941 transistor
2SB941 Q
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2SD1266
Abstract: 2SB941 2SB941A 2SD1266A
Text: Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A • Features Parameter 2SD1266 base voltage 2SD1266A Collector to 2SD1266 Ratings 60 VCBO 60 VCEO emitter voltage 2SD1266A
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2SD1266,
2SD1266A
2SB941
2SB941A
2SD1266
2SD1266
2SB941A
2SD1266A
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2SD1266
Abstract: 2SD1266A 30ma 40v npn 2SB941 datasheet
Text: Inchange Semiconductor Product Specification 2SD1266 2SD1266A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB941/941A
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2SD1266
2SD1266A
O-220Fa
2SB941/941A
O-220Fa)
2SD1266
2SD1266A
30ma 40v npn
2SB941 datasheet
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2SD1266
Abstract: 2SD1266A 2SB941 P
Text: SavantIC Semiconductor Product Specification 2SD1266 2SD1266A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB941/941A
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2SD1266
2SD1266A
O-220Fa
2SB941/941A
O-220Fa)
2SD1266
2SD1266A
2SB941 P
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transistor 12v 1A NPN
Abstract: 2SB941 2SD1266
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1266 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = 1.2V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB941
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2SD1266
2SB941
10MHz
transistor 12v 1A NPN
2SB941
2SD1266
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2SD1266
Abstract: 2SD1266A 2SB0941 2SB941 2SB941A
Text: Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0941 2SB941 and 2SB941A (2SB941A) Parameter Symbol Rating Unit VCBO 60 V Collector to base voltage 2SD1266 Collector to emitter voltage
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2SD1266,
2SD1266A
2SB0941
2SB941)
2SB941A
2SB941A)
2SD1266
2SD1266
2SD1266A
2SB0941
2SB941
2SB941A
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB0941, 2SB0941A 2SB941, 2SB941A Silicon PNP epitaxial planar type Unit: mm 5.5±0.2 2.7±0.2 16.7±0.3 φ 3.1±0.1 • Absolute Maximum Ratings TC = 25°C Collector to base voltage 2SB0941 Collector to emitter voltage 2SB0941 2SB0941A
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2SB0941,
2SB0941A
2SB941,
2SB941A)
2SD1266
2SD1266A
2SB0941A
2SB0941
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2SB941
Abstract: 2SB941A 2SD1266 2SD1266A
Text: Powér Transistors 2SB941, 2SB941A 2SB941, 2SB941A Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SD 1266, 2SD 1266A Unit ! mm 4.4max. 2.9max. • Features • H igh DC c u r re n t gain Iife and good lin earity
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2SB941,
2SB941A
2SD1266,
2SD1266A
2SB941
2SB941A
2SD1266
2SD1266A
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2SB941
Abstract: 2SB941A 2SD1266 2SD1266A 2SB941 Q
Text: Powër Transistors 2SB941, 2SB941A 2SB941, 2SB941A Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SD 1266, 2SD 1266A U nit ! mm 4.4max. 5.7 max. • Features • H igh DC c u r re n t gain Ii f e and good lin earity
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2SB941,
2SB941A
2SD1266,
2SD1266A
2SB941
2SB941A
2SD1266
2SD1266A
2SB941 Q
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2SD1266 R
Abstract: 2SD1266 2SB941 2SB941A 2SD12 2SD126 2SD1266A VCE-80
Text: Power Transistors 2SD1266, 2 SDÌ 2Ó6A S D 1266, 2S D 1266A Silicon NPN Triple-Diffused Planar Type 2 Package Dimensions Power Amplifier Complementary Pair with 2SB941, 2SB941A • Features Unit ! mm 4.4max. 10.2max. 5.7max. 2.9max »I • High DC current gain I i f e and good linearity
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2SD1266,
2SD1266A
2SB941,
2SB941A
2SD1266
2SD126Ã
2SD1266 R
2SB941
2SB941A
2SD12
2SD126
2SD1266A
VCE-80
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UMS1
Abstract: 2sb941 nec 772 1866 2sa158 2sa1727 2SB1308 2SA1400-Z 2SA1588 2SA1745
Text: - m € T y p e No. a € Manuf. 2SA 1865 = z m SAN YO B m NEC ÍL H IT ACHI a i 2S A 1 7 4 5 2SA 1868 fé T 2S A 1 7 7 2 s 2 2SB1274 2SA 1873 K 2 2SA 1875 H * . 2SA 1878 2SA 1879 ffSTE 2SA 1881 ^ Z * 2 SA 1588 * ± a FUJITSU fò T MATSUSHITA — A ROHM 2 SB 1219
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2SA1832
2S31462
2SB1462
2SA1745
2SA1588
2SB1475
2SB1219
2SA1772
2SA1400-Z
UMS1
2sb941
nec 772
1866
2sa158
2sa1727
2SB1308
2SA1400-Z
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PU1501
Abstract: PU4471 PU4135 PU7456 PU4000 PU4118 PU4128 apu4148 PU4444 PU3134
Text: Transistore Selection Guide by Applications and Functions IPower Transistor Arrays Series Name PU3000 Series Equivalent Circuit Package (No.) Equivalent Circuit I I I ^''''\_Structure A p p lic a tio n ^ ^ General Example (N P N ) TT 2 s 5 Low VcE(sat) PUA3000
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PU3000
PUA3000
PU4000
PU3110
PU3210
PU4110
PU4210
PU4410
PU4510
PU4310
PU1501
PU4471
PU4135
PU7456
PU4118
PU4128
apu4148
PU4444
PU3134
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Pu4128
Abstract: PU4471 PU42C26
Text: Transistore Selection Guide by Applications and Functions I Power Transistor Arrays Series Name PU3000 Series Equivalent Circuit Package (No.) T 3 5 ^ ^ \S t r u c t u r e « PU4000 Series 8 Pin 'SIP Package (D72) (D73) Equivalent Circuit 7 PUA3000 Series
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PU3000
PU4000
PUA3000
PU3110
PU3210
PU4110
PU4210
PU4410
PU4510
PU4310
Pu4128
PU4471
PU42C26
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2SB962
Abstract: 2SD1288 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB941A 2SB942
Text: - 68 T a = 2 5 cC , * T O T c = 2 5 t ; M % íí 2SB938A 2SB939 fâT 2SB939A ffl £ íé VcBO Vc e o (V) (V) Ic (D C ) (A) m Pc Pc* ICBO (W) (W) (max) (//A) VcB (V) % (min) fä (max) tí VcE (V) (T a = 2 5 ' C ) I c/ I e (A) [*EPIÍtypíS] (max) (V) PA/S»
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2SB938A
2SB939
2SB939A
2SB940
2SB940A
2SB941
2SB947A
2SB951A
2SB952
2SB952A
2SB962
2SD1288
2SB941A
2SB942
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2SA1015
Abstract: 2SA1358 2SA965 2SB1212 2SB560 sa1015 2SA934 2SA985 NEC 2SA1096 2SA385
Text: - 6 - m % « tt T y p e No. Manuf. = í¥ SANYO TOSHIBA m NEC B ÎL HITACHI * 2SA 479 m S * * ac s * 2S A 480 y.- - * 2S A 482 * * 2 S A 4 8 3 *-' 2SB596 2SA985 2SB507 2SB596 2SA985 2SB856 2SA836 2SA 4 ? 3 ^ ' * 2SA 474 ^ * 2SA 475 * 2 S A 4 7 7 ír. * 2SA 478 ^
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SA1015
2SA385
2SA715
2SB941
2SB1064
2SA1015
2SA673
2SA1015
2SA1358
2SA965
2SB1212
2SB560
2SA934
2SA985 NEC
2SA1096
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2SA985 NEC
Abstract: 2s8834 2SB56 2SB596 2SA985 toshiba 2sb555 2SB834 2SB508 2SB537 2SA836
Text: s € tt T y p e No. 2SB 153 2SB 154 2SB 155 2SB 176 " 2SB 302 2SB 370 2SB 370A 2 Sß 434 , □ SS a X 3: SAN YO ^ M TOSHIBA s t NE C il H IT ACHI ±L 2SB 561 ±L 31 2 SB 561 T 4 ii Ä S 2SB 435 ^ 2SB 444 0 a a iz 2SB 492 - = # 2SB 496 iL 2SB 502 Ä ä 2SB 443
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2SB561
2SB56
2SA836
2SB562
2SB507
ZSB834
2SA985
2SA985 NEC
2s8834
2SB56
2SB596
toshiba 2sb555
2SB834
2SB508
2SB537
2SA836
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2SB943
Abstract: 2SD1268
Text: 2SB943 Power Transistors 2SB943 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1268 •Features • • • • 2.9max. Low collector-emitter saturation voltage VcEisao Good linearity of DC current gain (I if e )
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2SB943
2SD1268
2SB941/A)
2SD1268
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Untitled
Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D52 * , D53) U Type (D41) MT2LType MT3 Type (D44) (D45) MT4 Type (D46) TO-202 (D54) T0-220(a) (D56) TO-220F
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O-126
O-202
T0-220
O-220F
2SC1398A
2SB1543
2SB1416
2SB1417
12SD2363
12SD2136
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2SA1949
Abstract: 2SC5221 2SA1950 2C156 2SB1543 2SB1545 2SC2594 Complementary Darlington Audio Power Amplifier 2SD2412 2SD2404
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) P a c k a g e (No.) Application Functions U Type (D41) TO-126 (D52 * , D53) M T 2LT ype MT3 Type (D44) (D45) MT4 Type (D46) TO-202 (D54) T0-220(a)
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O-126
O-202
T0-220
O-220F
2SC1398A
A2SB1573
2SD2407
2SB1543
12SD2363
2SB1416
2SA1949
2SC5221
2SA1950
2C156
2SB1545
2SC2594
Complementary Darlington Audio Power Amplifier
2SD2412
2SD2404
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2SC4714
Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F
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O-126
D52SK,
O-202
T0-220
O-220F
2SA1605
2SC2258
2SC3063
2SC2923
2SC4714
2SA1817
2SD1539
2SA1605
2SC2258
2SC3063
2SC3942
2SC3945
2SC4717
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