Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 (0.95) (0.95)
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2002/95/EC)
2SB0970
2SB970)
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2SB0970
Abstract: 2SB970
Text: Transistor 2SB0970 2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm +0.2 • Features 1.45 0.95 1 3 +0.1 0.4 –0.05 1.9±0.2 0.65±0.15 0.95 +0.2 ● +0.25 1.5 –0.05 0.65±0.15 Low collector to emitter saturation voltage VCE(sat).
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2SB0970
2SB970)
2SB0970
2SB970
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN07651 XN7651 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 4 5 6 2 1 0.65±0.15 3 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • ARN-5 + 2SB0970 (2SB970)
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XN07651
XN7651)
2SB0970
2SB970)
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2SB0970
Abstract: 2SB970
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 3 (0.95) (0.95) Emitter-base voltage (Collector open)
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2002/95/EC)
2SB0970
2SB970)
SC-59
2SB0970
2SB970
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2SB0970
Abstract: 2SB970 2SD1328 XN04604 XN4604
Text: Composite Transistors XN04604 XN4604 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element Parameter 1.1+0.2 –0.1 2SD1328 + 2SB0970(2SB970) ■ Absolute Maximum Ratings
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XN04604
XN4604)
2SD1328
2SB0970
2SB970)
2SB970
2SD1328
XN04604
XN4604
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2SB970
Abstract: No abstract text available
Text: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB970 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Mini type package,allowing downsizing of the equipment and automatic 0.4 3 Low collector-emitter saturation voltage VCE sat .
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2SB970
OT-23
2SB970
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2SB970
Abstract: No abstract text available
Text: Transistor 2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm +0.2 2.8 –0.3 • Features 1.45 0.95 1 3 +0.1 0.4 –0.05 1.9±0.2 0.65±0.15 0.95 +0.2 ● 0.65±0.15 Low collector to emitter saturation voltage VCE sat .
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2SB970
2SB970
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Transistor hFE CLASSIFICATION Marking CE
Abstract: hFE is transistor to-220 Vbe 8 V 2SB0970 2SB970
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 Symbol Rating
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2002/95/EC)
2SB0970
2SB970)
Transistor hFE CLASSIFICATION Marking CE
hFE is transistor to-220
Vbe 8 V
2SB0970
2SB970
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Untitled
Abstract: No abstract text available
Text: Product specification 2SB970 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Mini type package,allowing downsizing of the equipment and automatic 0.4 3 Low collector-emitter saturation voltage VCE sat . 1 0.55 insertion through the tape packing and the magazine packing.
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2SB970
OT-23
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2SB0970
Abstract: 2SB970
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05
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2002/95/EC)
2SB0970
2SB970)
2SB0970
2SB970
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2SB0970
Abstract: 2SB970 XN04404 XN4404
Text: Composite Transistors XN04404 XN4404 Silicon PNP epitaxial planer transistor ● 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° ■ Absolute Maximum Ratings Parameter 1.1+0.2 –0.1 2SB0970(2SB970) x 2 elements 0 to 0.1
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XN04404
XN4404)
2SB0970
2SB970)
2SB970
XN04404
XN4404
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2SB0970
Abstract: 2SB970
Text: Transistor 2SB0970 2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and
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2SB0970
2SB970)
20nductor
2SB0970
2SB970
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 (0.95) (0.95)
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2002/95/EC)
2SB0970
2SB970)
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2SB0970
Abstract: 2SB970
Text: Transistors 2SB0970 2SB970 Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 (0.95) (0.95) 1.9±0.1 (0.65) 2 1 ■ Absolute Maximum Ratings Ta = 25°C
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2SB0970
2SB970)
2SB0970
2SB970
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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XN4608
Abstract: 2SB0970 2SB970 2SD0601A 2SD601A XN04608
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04608 (XN4608) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 3 2 1 (0.65)
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2002/95/EC)
XN04608
XN4608)
XN4608
2SB0970
2SB970
2SD0601A
2SD601A
XN04608
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xn07
Abstract: 2SB0970 2SB970 XN07651 XN7651
Text: Composite Transistors XN07651 XN7651 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 M Di ain sc te on na tin nc ue e/ d For motor drive 5 6 2 0.30+0.10 –0.05 0.50+0.10 –0.05
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XN07651
XN7651)
xn07
2SB0970
2SB970
XN07651
XN7651
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2SB0970
Abstract: 2SB970 2SD0601A 2SD601A XN04608 XN4608
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04608 (XN4608) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For general amplification (Tr1) For amplification of low-frequency output (Tr2)
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2002/95/EC)
XN04608
XN4608)
2SB0970
2SB970
2SD0601A
2SD601A
XN04608
XN4608
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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2SB1545
Abstract: 2SA1309 2SA1776 2sa1015 2SA170B 2sa1115 2SA1383 2SA1091 2Sa1744 2SB709
Text: - 40 - S s T y p e No. tt S Manuf. 2SA 1750 H 2SA 1751 H # 2SA 1752 H $ 2SA 1753 H if 2SA. 1755 ^ B ÍL 2SA 1757 . * h SANYO * S T O S HIBA # S NEC ï 3 HITACHI I ± I FUJITSU fâ T MATSUSHITA 2SA1156 2SA1110 2SA1383 2SA15 3 5 A m = MITSUBISHI 2SA1121 2SB970
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2SA1156
2SA1110
2SA1383
2SA1535A
2SA1535
2SA1182
2SA1464
2SA1121
2SB970
2SB1545
2SA1309
2SA1776
2sa1015
2SA170B
2sa1115
2SA1383
2SA1091
2Sa1744
2SB709
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marking ML5
Abstract: 2SB977 2SB977A 2SC1547 2SD893 PG-25 ML5 marking 2SB970 2SD893A IS020
Text: PANASONIC INDL/ELEK-CSEfll} 7EC V | ^ 3 5 0 5 4 □GD1GD4 7 | ~ h ^ ^ T / 5 ? _ *_ 2SB970 2SB970 '> ij zj > PNP öl tf £ '> t Ji/Z?I s - j - f î t / S i PNP Epitaxial Planar fSISEEiÜ^jittififfl/AF Output Amplifier
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2SB970
f-800MHz
40MHz
800MHz
Re-68011
Ta-25
marking ML5
2SB977
2SB977A
2SC1547
2SD893
PG-25
ML5 marking
2SB970
2SD893A
IS020
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2SB1099
Abstract: 2sd1589 2SB1100 2SD1407 2SB1089 2SD1347 2SB966 2SB967 2SB968 2SB970
Text: - 70 - m 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2SB975 2SB976 2SB977 2SB977A 2SB984 *± BIS töT föT HÄ an B föT fö~F töT BM 2SB985 2SB986 n Ta=25V.*EPteTc=25V £ £ VcBO Vceo Ic(DC) Pc (V) (V) <A> (HO Pc* m iCBO (max) (ub) VcB m (min) (V) & w
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2SB966
2SB967
2SB968
2SB970
2SB973
2SB974
2SB1099
MP-45)
2SB1100
2SD1601
2SB1099
2sd1589
2SB1100
2SD1407
2SB1089
2SD1347
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2SA1385
Abstract: 2SB1256 2SB892 2SA1020 2SB1015 2SA1266 2SA1770 2SB1441 25B1142 2sb111
Text: m « Type No. 2SB 1426 , 2SB 1427 2SB 1428 — 2SB 1429 2SB 1430 2SB 1431 2SB 1432 ^ 2SB 1433 2SB 1434 2SB 1435 2SB 1436 2SB 1437 2SB 1438 2SB 1439 2SB 1440 2SB 1441 2SB 1442 2SB 1443 2SB 1444 2SB 1445 2SB 1446 2SB 1447 2SB 1448 2SB 1449 2SB 1450 2SB 1451
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2SB1395
2SA1266
2SB1446
2SB1434
2SA1363
2SB892
2SB1117
2SB1317
2SB913
2SA1385
2SB1256
2SB892
2SA1020
2SB1015
2SA1770
2SB1441
25B1142
2sb111
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