Transistor 2SC 2166
Abstract: AD10200 AD775 AD9048 AD9051 AD9051-2V AD9054A AD9057 AD9200 AD9203
Text: A/D CONVERTERS: >3MSPS: DC SPECS # A/D’s MODEL # Bits +Vcc V Power Supply Requirements +Icc -Vee -Iee mA Volts mA +Vdd Volts +Idd mA Input Voltage Range Sample Sample Analog INL Rate Rate Band MAX MIN Width Lsb’s MSPS MSPS +25C Tmax DNL Lsb’s +25C Tmax
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Rev-19
PAGE-14
Transistor 2SC 2166
AD10200
AD775
AD9048
AD9051
AD9051-2V
AD9054A
AD9057
AD9200
AD9203
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nf025
Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920
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X13769XJ2V0CD00
950MHz
500MHz
PC2794
PC1687
PC2744
PC2775/µ
nf025
NE27283
upc27
x-band power transistor 100W
NE42484
P147D
2SK2396
uPG508
nf025db
2SC5408
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2SA794
Abstract: 2sc1567 2SA794A 2SC1567A T0126
Text: Power Transistors 2SA794, 2SA794A 2SA794, 2SA794A Silicon P N P Epitaxial Planar Type • Package Dimensions AF Output Drivers Complementary Pair with 2SC 1567, 2SC 1567A ■ Features • High collector-emitter voltage V c e o • Optimum for 40~100W AF output driver
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2SA794,
2SA794A
2SC1567,
2SC1567A
0-100W
O-126
2SA794
2sc1567
2SA794A
2SC1567A
T0126
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IC 4082
Abstract: No abstract text available
Text: h 7 > y ' X ^ / I ransistors 2SC3837K/2SC4082 2SC 3837K 2SC 4082 + NPN 5/U □ > K - 7 > v * £ Epitaxial Planar NPN Silicon Transistors KJS&iBtSJfl/RF Amplifier i^ - fi\t'ji0 // Dimensions Unit: mm) • 4$« 1) f r f r ' S t '» fT=1.5G H z(Typ.) 2SC3837K
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2SC3837K/2SC4082
2SC3837K
3837K
2SC4082
2SC3837K
IC 4082
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2sc1567
Abstract: 2SA794 2SA794A 2SC1567A panasonic 2SC Scans-0080508
Text: Power T ransistors 2SC 1 5 6 7 , 2SC 15 6 7 À 2SC1567, 2SC1567A Silicon NPN Epitaxial Planar Type Package Dimensions AF High Power Driver Complementary Pair with 2SA794, 2SA794A •Features • High co llector-em itter voltage V ceo • Optimum for the driver of 4 0 ~ 1 0 0 W A F output
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2SC1567
2SC1567A
2SC1567,
2SA794,
2SA794A
2SC1567
2SC1567A
2SA794
panasonic 2SC
Scans-0080508
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2SC3839K
Abstract: 2SC4084
Text: h ~7 > v 7. $ / T ransistors 2 C S 3 8 3 9 2SC3839K/2SC4084 K x t f ^ v ^ i / y ^ - ^ N P N v u = ] > h - 7 > v * £ Epitaxial Planar NPN Silicon Transistors 2SC4084 raJS'/SiH aE/R F Amplifier Dimensions U n it: mm 1) f r fT = 2 G H z (Typ.) 2SC 3839K 2SC 4084
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2SC3839K/2SC4084
2SC3839K
2SC4084
2SC3839K
SC-59
0G11DDT
IS12I
2SC4084
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2SC2591
Abstract: 2sc2592 2SA1111 2SA1112 2SC2591/2592
Text: 2SC 2591, 2SC 2592 Power T ransistors 2SC2591, 2SC2592 Silicon NPN Epitaxial Planar Type P ackage Dim ensions AF Driver, High Pow er Am plifier C om plem entary Pair with 2 S A 1 111, 2 S A 1 112 Unit 1 mm 10.5 + 0.5 Oirt 9.8max., 7.6min. • Features • Very good linearity of DC current gain Iife
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2SC2591,
2SC2592
0--100W
2SA1111
2SA1112
2SC2591
2SC2592
2SA1112
2SC2591/2592
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2SC3779
Abstract: U40j 2SC3779 transistor
Text: Ordering number : EN 1954C 2SC 3779 NPN Epitaxial Planar Silicon Transistor S A \ Y O i UHF Low-Noise Amp, Wide-Band Amp Applications Applications . OHF low-noise amplifiers,wide-band amplifiers Features . Small noise figure: NF=1.5dB typ f=0.9GHz . . High power gain: MAG*l4dB typ(f=0.9GHz).
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1954C
2SC3779
SC-51
rO-92
3C-43
2SC3779
U40j
2SC3779 transistor
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2SC1905
Abstract: No abstract text available
Text: Power Transistors • b^asM d d i ü ? q 3ö t « p n c e 2Sc i 905 H PANASONIC INDL/ELEKÍSEMI) 2SC1905(H) bTE D Silicon PNP Triple-Diffused Planar Type Package Dimensions Horizontal Deflection Driver for Color T V set U nit ! mm ■ Features 10.5 ± 0 .5
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DD1G770
2SC1905
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1951b
Abstract: 2SC3778 transistor UHF Marking TRANSISTOR 777
Text: ,| O rd e rin g n u m b e r :EN 1 9 5 l l T 2SC 3778 NPN Epitaxial Planar Silicon Transistor S A N Y O i UHF Low-Noise Amp, Wide-Band Amp Applications Applications . UHF low-noise amplifieres,wide-band amplifiers Features . Small noise figure: NF=2.2dB typ f=0.9GHz .
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1951B
2SC3778
2034/2034A
SC-43
7tlt17D7b
1951b
2SC3778
transistor UHF
Marking TRANSISTOR 777
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2SC3611
Abstract: No abstract text available
Text: P o w e r T ra n s is to rs 2SC 3611 2SC3611 Silicon N P N Expitaxial Planar Type Video Am plifier Package Dim ensions • Features High transition frequency f-r • Small collector output capacitance (C„b) • Wide current range ' . I Absolute. M axim um Ratings (T a = 2 5 °C )
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2SC3611
100x100x2
2SC3611
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2SA1110
Abstract: 2SC2590 2SS-020
Text: Power T ransistors 2SA1110 2SA1110 Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SC 2590 • Features • G ood lin e a rity of D C c u r re n t gain I if e • H igh tra n s itio n fre q u e n c y (fT)
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2SA1110
2SC2590
200MHz
2SA1110
2SC2590
2SS-020
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2SC2590
Abstract: WJ 3 2SA1110 hlk-2
Text: Power Transistors 2SC 2590 2SC2590 Silicon NPN Epitaxial Plànar Type • P ackage Dim ensions AF Pow er Am plifier C om plem entary Pair with 2 S A 1 1 1 0 ■ Features • V ery good linearity of DC c u rre n t gain I if e • High transition frequency (f-r)
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2SC2590
2SA1110
2SC2590
WJ 3
2SA1110
hlk-2
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2SC5531
Abstract: 2SC553
Text: 2SC 553 ^ _ SILICON NPN EPITAXIAL PLANAR TRANSISTOR ü mX m m INDUSTRIAL APPLICATIONS U nit O VHF « • * * * V H F Power Ampli t i e r A p p l i c a t i o n « 400MHz r a t>îo w * / jv ) mcytifì-o ( P i n = 4W . Vc c = 260MHS! T ffi fs 88 V )
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400MHz
260MHS!
2sc553
200mA
500mA
150mA
250mA
200MHz
2SC5531
2SC553
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2sc2188
Abstract: 2SC2153 2SC218
Text: PANASONIC INDL/E LE Ki SE MI} 72C D | [^35054 E h T 3 - / 2SC 2153. 2SC2153 ' > U =1 y NP N 7 V — NP N Planar iS J l];& iiitIffl/R F Amplifier • ^ /F e a tu r e s • f > (a iê g c fT *''i '''o /H ig h fT • ‘Üij|li?-;!r Crb • ^<— V ^ /L o w Crb
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2SC2153.
2SC2153
250mW/Potting
250mW
2sc2188
2SC2153
2SC218
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2sc401
Abstract: 2SA1532 2SC39 2SC3936 2SC40 2SC4011
Text: - an H¡ 1 * * * 5È fê il •2SC3936 fâ T Ê : i*/Í¡ÉtÍfSffl V9 ' 2SA1532 # Ä : AM/FM 5 i 5* ® S& , RF tf* § , g j g , IF i# (g e * ® o • 2SC 3 9 3 7 : UHF Ä : feJT wim^ms, lA w W ttl, i a S f& fl a Vc e o (V ) 20 Ve b o (V) 5 tlFE ît
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2SC3936
2SA1532
200MHz
800MHz
2SC40
2sc401
2SA1532
2SC39
2SC4011
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2SC27
Abstract: 2SC2715 2SC2717
Text: - & - m * « • 2 S C 2 6 7 1 H fé T : UHF ñ : mmmn nf m s\ M W M PG ¡ K f c é i 'o t- 7 y i/i/ g ;/ÍH S S C f r * s¡ljl‘ 'o • 2SC 2 7 14 S S H i É : ¡ f f lS W t f g f f l (FM RF/MIX/OSC IF ü « « ) m : i '» « § ? § » < = • 2SC2 7 15
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-20mA.
800MHz
200MHz,
800MHz
500MHz,
100dB
VCE-12V,
30MKz
2SC2717
2SC27
2SC2715
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Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)
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O-126
O-126
T0-220AB,
O-220
2SC4544
2SC4448
2SC3612
2BC4201
Transistor 2SA 2SB 2SC 2SD
S-AU27M
S2000A inverter
P4005
S-AV21H
S-AU27
3182N
2sb 834 transistor
Transistor 2SC4288A
Drive IC 2SC3346
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2sc4857
Abstract: 2SC4872 2sc487 2sc4856 2sc4859
Text: I High-Performance Si Bipolartransistor fT > 5GHz Series Features High Gain, Low Noise G -III-NRP (G iga-lll-N oise Reduction Process) technology subm icron hyperfine process developed for high gain and low noise characteristics Low Power Dissipation High perform ance at low voltage and low current for low power dissipation
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2SC4853
250mm2
jS21e
2sc4857
2SC4872
2sc487
2sc4856
2sc4859
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AF106
Abstract: AF108 oms 450 tlf 4 120 siemens 100MHZ 200MHZ transistor pnp 30V 1A 1W 2sc 103 transistor Germanium mesa tlf 106
Text: 5SC D • 023SbQS GGQHG47 S H S I E G ; PNP Germanium RF Transistor T '- lf- O l ' A F 106 SIEMENS A K T I E N G E S E L L S C H A F T 04047 D for input, mixer, and oscillator stages up to 260 MHz The AF 106 is a general-purpose germanium PNP high frequency mesa transistor in TO 72
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023SbOS
GGGHG47
AF106
AKTIEN6ESELLSCHAF25C
AF106
AF108
oms 450
tlf 4 120 siemens
100MHZ
200MHZ
transistor pnp 30V 1A 1W
2sc 103 transistor
Germanium mesa
tlf 106
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2SC3136
Abstract: hfe 2500
Text: - 120 - h «s « a #2 S C 3 13 0 fBiâ : UHF S S Ä t S i , f ÿ Â : H 5 V 'ÿ •> 3 tä a u fô T Vceo V 3êjg, ig ê ffl Vebo ( ÿ) ^ llà SSfT ^ 'fltV 'o a i / « c o b , - M a i?® Crb *> 'h ÿV '0 • 2 SC 3 1 3 6 JîS ffliÊ : VHF TV f i - t l S g i » ,
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200MHz
20ittA
2SC3136
hfe 2500
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2SC1116A
Abstract: transistor 431A transistor tl 431A h a 431a transistor 2SC1619A 2SA119 2SC1008A 2SC16 2SC1517A SI 7300
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SCU03A
2SC1116A
tc-25t
2SC1619A
100MHz,
2SC1775A
transistor 431A
transistor tl 431A
h a 431a transistor
2SA119
2SC1008A
2SC16
2SC1517A
SI 7300
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32ES2
Abstract: 2SC2594 C2594 2SC259
Text: Power Transistors. 2SC2594; 2SC2594 Silicon NPN Epitaxial Planar Type Package Dimensions AF Power Amplifier For Strobo, Converter . • Features • Low co llector-em itter saturation voltage V ce<!>o . • High performance and good operating ch aracteristics at low supply
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2SC259&
2SC2594
O-126
32ES2
2SC2594
C2594
2SC259
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3SK303
Abstract: S-Mini 3SK307
Text: Panasonic High Frequency FETs 3SK303 Tentative , 3SK307(Tentative) Silicon N-Channel MOS Unit : mm 3SK303 For VHF amplification 0 . 65 ± 0 .1 5 - 13 • Features • Though low voltage operation, performance is equivalent to the con ventional product. • Downsizing of sets by mini or S-mini type package, and automatic
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3SK303
3SK307
Vds-10V,
200MHz
S-Mini
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