2sc1096
Abstract: ic 4060 2SC1096 M 2SC1096 NPN 2SC1096 hfe
Text: Inchange Semiconductor Product Specification 2SC1096 Silicon NPN Power Transistors DESCRIPTION ・With TO-202 package ・Low breakdown voltage ・High current ・High fT APPLICATIONS ・For audio frequency power amplifier and low speed switching applications
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2SC1096
O-202
O-202)
2sc1096
ic 4060
2SC1096 M
2SC1096 NPN
2SC1096 hfe
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2SC1096
Abstract: 2SC1096 hfe ic 4060 2sc1096 equivalent 2SC1096 M
Text: SavantIC Semiconductor Product Specification 2SC1096 Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·Low breakdown voltage ·High current ·High fT APPLICATIONS ·For audio frequency power amplifier and low speed switching applications ·Suitable for output stages of 3 to 5 watts
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2SC1096
O-202
O-202)
2SC1096
2SC1096 hfe
ic 4060
2sc1096 equivalent
2SC1096 M
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2SA634
Abstract: 2SC1096 SYMBOL ic 4060
Text: SavantIC Semiconductor Product Specification 2SA634 Silicon PNP Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SC1096 ·High current capability APPLICATIONS ·Audio frequency power amplifier ·Low speed switching PINNING see Fig.2
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2SA634
O-202
2SC1096
O-202)
-20mA
2SA634
2SC1096
SYMBOL ic 4060
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2sa634
Abstract: 2sc1096 2sa634 datasheet
Text: Inchange Semiconductor Product Specification 2SA634 Silicon PNP Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SC1096 ·High current capability APPLICATIONS ·Audio frequency power amplifier ·Low speed switching PINNING see Fig.2
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2SA634
O-202
2SC1096
O-202)
-20mA
2sa634
2sc1096
2sa634 datasheet
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2SC1096
Abstract: No abstract text available
Text: Product Specification www.jmnic.com 2SC1096 Silicon NPN Power Transistors DESCRIPTION ・With TO-202 package ・Low breakdown voltage ・High current ・High fT APPLICATIONS ・For audio frequency power amplifier and low speed switching applications ・Suitable for output stages of 3 to 5 watts
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2SC1096
O-202
O-202)
2SC1096
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2SA634
Abstract: 2SC1096 2SA634 M 2SC1096 M
Text: AOK AOK Semiconductor Product Specification 2SA634 S ilicon PNP Power Transistors DESCRIPTION • With T 0 2 0 2 package • Complement to type 2SC1096 • High current capability APPLICATIONS • Audio frequency power amplifier • Low speed switching PINNING see Fig.2
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OCR Scan
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2SA634
O-202
2SC1096
2SC1096
2SA634 M
2SC1096 M
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2sc1096
Abstract: 2SA634 2SC1069 2SC09 2sc109 2SA634 M 251C transistor 2sa634 2SC096
Text: 2SA634/2SC1096 2SA 634/2SC 1096 P N P /N P N n V P N P /N P N S IL IC O N E P IT A X IA L T R A N S IS T O R A udio Frequency Power A m p lifie r, Low Speed Sw itching 1$ ^ / F E A T U R E S •W M tH tl 3 ~ 5 W R L = 4 il c O * — X r p jf , f i — 7 $ 7 v7<ntii-J]fflHZM &o
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OCR Scan
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2SA634/2SC1096
2SA634
2SC096
350/JS,
2sc1096
2SC1069
2SC09
2sc109
2SA634 M
251C
transistor 2sa634
2SC096
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Untitled
Abstract: No abstract text available
Text: tSs.mi-CondiLcto'i ^Pioaueti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-89fin 2SA634 Silicon PNP Power Transistor DESCRIPTION • High Collector Current lc= -3A • Collector-Emitter Breakdown Voltage: V(BR)CEo= -SOV(Min)
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376-89fin
2SA634
2SC1096
O-220C
-20mA;
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2SA616
Abstract: 2sa620 2SC1014 2SC1079 2SA688 2SC634A 2SA678 2SC1013 2SC1008A 2SA628A
Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) PartNumber VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob ºñ°í (V) (V) (mA) (mW) (ºC) VCE(V) Ic(mA) (MHz) (pF) 2SA603 -60 -8 -200 300 150 140 -1 -10 250* 7.5 2SC943 2SA604
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2SA603
2SC943
2SA604
2SA605
2SA606
2SC959
2SA607
2SC960
2SA608
2SA609
2SA616
2sa620
2SC1014
2SC1079
2SA688
2SC634A
2SA678
2SC1013
2SC1008A
2SA628A
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2sc1093
Abstract: 2SC1026 2SC1015 2SC1091 2SC1093 equivalent 2SC1015 equivalent 2SC1018 2sc1027 2SC1020 2SC1003
Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc 40 4 500 2SC1002 36 4 1A 2SC1003 36 4 2A 2SC1004 1100 5 500 2SC1004A 1500 5 500 2SC1005 1100 5 5A 2SC1005A 1400 5 5A 2SC1006 2SC1007 2SC1008 2SC1008A 2SC1009 2SC1010 50 60 80 100 50 50
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2SC1002
2SC1003
2SC1004
2SC1004A
2SC1005
2SC1005A
2SC1006
2SC1007
2SC1008
2SC1008A
2sc1093
2SC1026
2SC1015
2SC1091
2SC1093 equivalent
2SC1015 equivalent
2SC1018
2sc1027
2SC1020
2SC1003
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2SD669 equivalent
Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc
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2N6609
2N3773)
2N6667
2N6668
220AB
2N6387,
2N6388
2SD669 equivalent
BD801
BDY29 equivalent
BU108
2SC2080
2SD436
2N6021
BD345
tip122 D-PAK package
2SD544
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MJ11017 equivalent
Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types
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MJ11018,
MJ11022,
MJ11017
MJ11021*
MJ11018*
MJ11022
TIP73B
TIP74
TIP74A
TIP74B
MJ11017 equivalent
BU108
MJ11021
BU326
BU100
MJE3055T
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BU108
Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A
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BUV21
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
BU108
transistor Bc 574
2n6107 MOTOROLA
2SC1943
MJ3055 to220
2SC1419
BU326
BU100
MJ*15033
2N6277
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pin configuration transistor bd140
Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139
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BD136
BD138
BD140
BD140-10
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
pin configuration transistor bd140
2SD669 equivalent
BUV44
bd140 equivalent transistor
MJE15020
bd140 equivalent
BD250C EQUIVALENT
RCA122
2N6045 NPN POWER DARLINGTON
TRANSISTOR BD 136
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bdx54c equivalent
Abstract: BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc
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BDX53B,
BDX53C,
220AB
BDX53B
BDX53C
BDX54B
BDX54C
TIP73B
TIP74
TIP74A
bdx54c equivalent
BOX 53C darlington power transistor
tip122 D-PAK package
All similar transistor 2sa715
BDX53C MOTOROLA
BU108
transistor tip31
AMPLIFIER 2SD718 2sb688 schematic
BDX54
2N386
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MJH11021 equivalent
Abstract: BUV44 FT317 SDT9202 2SC1903 BD262 DARLINGTON BD133 mje15033 replacement IR641 2SC2159
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP MJH11017* . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)
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MJH10012
MJ10012)
MJH11018,
MJH11020,
MJH11022,
MJH11017*
MJH11019*
MJH11021*
MJH11018*
MJH11020*
MJH11021 equivalent
BUV44
FT317
SDT9202
2SC1903
BD262 DARLINGTON
BD133
mje15033 replacement
IR641
2SC2159
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texas 2n3055
Abstract: BU108 2n3055 MJ15003 2SD424 BDX54 MJ2955 replacement 2n3055 replacement 2N5655 equivalent BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955* Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc
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2N3055
MJ2955*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
texas 2n3055
BU108
2n3055 MJ15003
2SD424
BDX54
MJ2955 replacement
2n3055 replacement
2N5655 equivalent
BU326
BU100
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TIP34C equivalent
Abstract: BU108 TRANSISTOR BC 384 5D2 6 BUV11 equivalent BDX54 2N3025 equivalent BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A
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BUV11
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
TIP34C equivalent
BU108
TRANSISTOR BC 384
5D2 6
BUV11 equivalent
BDX54
2N3025 equivalent
BU326
BU100
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tip122 tip127 audio amp
Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc
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TIP120,
TIP125
TIP121,
TIP126
TIP122,
TIP127
220AB
tip122 tip127 audio amp
TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
BD226-BD227
tip122 tip127 audio board
D45H111
3904 Transistor
BU108
tip120 darlington
TIP41 amplifier
TIP121 TEXAS
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pin configuration NPN transistor BD679
Abstract: 2SC101 pin configuration NPN transistor BD 677 BU108 TIP120 equivalent 2SC7 2N6052 equivalent 2SC558 BDX54 2SC1943
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD675 BD675A BD677 BD677A BD679 BD679A BD681* Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc
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BD675,
BD676,
BD675
BD675A
BD677
BD677A
BD679
BD679A
BD681*
TIP73B
pin configuration NPN transistor BD679
2SC101
pin configuration NPN transistor BD 677
BU108
TIP120 equivalent
2SC7
2N6052 equivalent
2SC558
BDX54
2SC1943
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BDV65B equivalent
Abstract: buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistors
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BDV65B
BDV64B
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
BDV65B equivalent
buv48 equivalent
BU108
tip127 pin details
2SD424
BDX54
BU326
BU100
mje340
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PDF
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transistor K 3596
Abstract: TIP-106 motorola power transistor to-126 2N6109 equivalent MJE3055 TO-126 BU326 BU108 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE700,T Plastic Darlington Complementary Silicon Power MJE702 Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 Typ @ IC = 2.0 Adc
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MJE700
MJE800
T0220AB,
MJE700T
MJE800T
MJE702
MJE703
MJE802
transistor K 3596
TIP-106
motorola power transistor to-126
2N6109 equivalent
MJE3055 TO-126
BU326
BU108
BU100
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PDF
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BU108
Abstract: BDW94 DTS801 MJE2482 2SC1419 BU326 BU100 2N3055/MJ802
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25–100 @ IC = 7.5 A
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MJ802
MJ4502
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
BU108
BDW94
DTS801
MJE2482
2SC1419
BU326
BU100
2N3055/MJ802
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PDF
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BU108
Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A
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Original
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BUV20
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
BU108
2SC194
transistor Bc 574
2SC1419
BU326
BU100
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