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    Toshiba America Electronic Components 2SC1169

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    Toshiba America Electronic Components 2SC1166

    2SC1166
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    2SC116 Datasheets (163)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC116 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC116 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC116 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC116 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC116 Unknown Vintage Transistor Datasheets Scan PDF
    2SC116 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC116 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC116 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC116 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC116 Unknown Cross Reference Datasheet Scan PDF
    2SC1160 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC1160 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC1160 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC1160 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC1160 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC1160 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC1160 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC1160 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC1160 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC1160 Unknown Transistor Replacements Scan PDF
    ...

    2SC116 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc1162

    Abstract: 2sc1162 equivalent 2SA715
    Text: Inchange Semiconductor Product Specification 2SC1162 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA715 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to


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    PDF 2SC1162 O-126 2SA715 2sc1162 2sc1162 equivalent 2SA715

    2SC1161

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC1161 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency high voltage power amplifier TV vertical deflection output applications.


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    PDF 2SC1161 500mA; 200mA 2SC1161

    Hitachi DSA002788

    Abstract: No abstract text available
    Text: 2SA715 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO –35


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    PDF 2SA715 2SC1162 O-126 D-85622 Hitachi DSA002788

    2SC1163

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC1163 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated


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    PDF 2SC1163 O-126 2SC1163

    2sa715 equivalent

    Abstract: 2sc1162 Hitachi DSA001650
    Text: 2SA715 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1 2 1. Emitter 2. Collector 3. Base 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO –35


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    PDF 2SA715 2SC1162 O-126 D-85622 2sa715 equivalent 2sc1162 Hitachi DSA001650

    2sc1162

    Abstract: 2SA715 DSA003644 Hitachi 2SA
    Text: 2SC1162 Silicon NPN Epitaxial ADE-208-880 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings


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    PDF 2SC1162 ADE-208-880 2SA715 O-126 2sc1162 2SA715 DSA003644 Hitachi 2SA

    2sa715 equivalent

    Abstract: 2SA715 2sc1162 DSA003644 Hitachi 2SA
    Text: 2SA715 Silicon PNP Epitaxial ADE-208-852 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating


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    PDF 2SA715 ADE-208-852 2SC1162 O-126 2SA715 2sa715 equivalent 2sc1162 DSA003644 Hitachi 2SA

    2SA715

    Abstract: 2sa715 equivalent 2sc1162
    Text: SavantIC Semiconductor Product Specification 2SA715 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC1162 APPLICATIONS ·Low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to


    Original
    PDF 2SA715 O-126 2SC1162 2SA715 2sa715 equivalent 2sc1162

    2SC1161

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC1161 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency high voltage power amplifier TV vertical deflection output applications.


    Original
    PDF 2SC1161 500mA; 200mA 2SC1161

    2SC1163

    Abstract: transformerless
    Text: Inchange Semiconductor Product Specification 2SC1163 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated


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    PDF 2SC1163 O-126 2SC1163 transformerless

    transistor 2SC1162

    Abstract: 2SA715 2sc1162
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA715 DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -35V (Min) ·Complement to Type 2SC1162 APPLICATIONS ·Designed for use in low frequency power amplifier


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    PDF 2SA715 2SC1162 -10mA; transistor 2SC1162 2SA715 2sc1162

    2SC1162

    Abstract: Hitachi DSA002754
    Text: 2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage


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    PDF 2SC1162 2SA715 2SC1162 Hitachi DSA002754

    2SA715

    Abstract: 2SC1162 LE20A
    Text: AOK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA715 DESCRIPTION • With TO-126 package • Complement to type 2SC1162 APPLICATIONS • Low frequency power amplifier applications PINNING PIN 1 DESCRIPTION Emitter Collector;connected to


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    PDF O-126 2SC1162 2SA715 O-126) LE20A

    2Sa715

    Abstract: No abstract text available
    Text: 2SA715 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO -126 MOD I 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B G


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    PDF 2SA715 2SC1162 2SA715

    2SC1169

    Abstract: L4 toshiba 3I33
    Text: 5h TOSHIBA {DISCRETE/OPTO} DE I ^ D T V a S D DOQTMBfl 7 | / 9097250 TOSHIBA ' C D I S C R E T E /O P T O SILICON NPN EPITAXIAL PLANAR TYPE 5bC 0 7 ^ 3 8 0 T - 3 / - 3 3 2SC1169 . Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. 0a39MAX 8.5MAX FEATURES


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    PDF 0743fl 3i-33 2SC1169 175MHz, 000743e! 001-uF 2SC1169 L4 toshiba 3I33

    BR 103 equivalent

    Abstract: 2SC1169
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC1169 Unit in œm VHF BAND POWER AMPLIFIER APPLICATIONS. 0&39MAX. FEATURES & 5M A X , : Outtmt Power : P 0 =2.5W Min. ( f=175MHz, VCC=13.5V, Pi=0.25W ) ,00. 45 2 6 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage


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    PDF 2SC1169 39MAX. 175MHz, -30pF BR 103 equivalent 2SC1169

    2SC1165

    Abstract: 2SC116
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC1165 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. 0a39M A X . Jía 4 5 M A X . FEATURES: -t' . Output Power : Fo= 0 .9W Min. (f=470MHz, Vcc=12.6V, Pi=0.3W) . All Electrodes Insulated from Case. ^ 0 .4 5 MAXIMUM RATINGS


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    PDF 2SC1165 0a39M 470MHz, 470MHz 2SC1165 2SC116

    2SC1260

    Abstract: 2sc1255 2SC1150 2SC1278S 2SC1210 2SC1252 2SC1265 2SC1268 2sc1162 2SC1269
    Text: - 102 - M X Ë f ê m £ £ Ta=25?C, *Ep[áTc=25'£ Pc ’C tu m Pc* (V) *± a 2SC1162 H i 2SC1164 2SC1165 2SC1ÎÔ9 MS (A) (V) (W) HS SW 60 50 1 0.8 (W) ( U A) œ tt (Ta=25'C) (max) 0.5 40 25 150 20 35 60 320 0.3 20 25 90 Vc e (V) Íc / I e (A) 1 (V) 0.6


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    PDF Ta-25 2SC1150 2SC116Z 2SC1164 2SC1165 2SC11Ã ZSC1173 2SC1199 2SC1212 50ohm 2SC1260 2sc1255 2SC1278S 2SC1210 2SC1252 2SC1265 2SC1268 2sc1162 2SC1269

    2sc1162

    Abstract: 2SA715
    Text: HITACHI 2SC1162 SILICON NPN EPITAXIAL LOW FREQ UEN CY PO W ER AMPLIFIER COMPLEMENTARY PAIR WITH 2SA715 1. [Imitier 2. Collector J. fl;« Dimcüsioi^ inmm} (JË Û Ë C TO-126 MOD. MAXIMUM COLLECTOR DISSIPATION CURVE • ABSO LU T E MAXIMUM RATINGS (Ta=25°C)


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    PDF 2SC1162 2SA715 O-126 2SCI162 2sc1162 2SA715

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SA715 SSLICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER" COMPLEMENTARY PAIR WITH 2SC1162 5 t . 2. {JEDEC TO-126 MOO. • ABSOLUTE MAXIMUM RATINGS <Tu=25°Ci lien» S s m tn l C ollector to base voltage t llllllc r to 2SA715 j Vcuo C ollector to em itter v illa g e : V i t o


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    PDF 2SA715 2SC1162 O-126 2SA715

    2sc2915 hitachi

    Abstract: 2Sc515a 2SC2611 2SC1515 2SC2181 2SC2894 2SC1212A 2SC1214 2SC2917 2SC2762
    Text: 116 - a m. £ Type No. 2SC 1490 t h□— ^ 2SC 1491 i h□ — =7 2SC2102 2SC2102 2SC 2SC 2SC 2SC ¿01/ 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC ^ h□— •=£ h□ — 2SC2103 2SC2181 2SC2282 2SC3008-KA 2SC2917 2SC2181 2SC1165 2SC2917 2SC2762 2SC 1514


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    PDF 2SC2102 2SC2281 2SC2282 2SC2103 2SC3008-KA 2SC2181 2SC2917 2sc2915 hitachi 2Sc515a 2SC2611 2SC1515 2SC2894 2SC1212A 2SC1214 2SC2917 2SC2762

    2SC1164

    Abstract: 2sc1164 O B298
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC1164 Unit in mn HIGH POWER A M P L IFIER EOR CATV APPLICATIONS. 0 9 . 3 9 MAX . 08.45M A X . FEATURES: . Wide Band and High Gain for Class A Amplifier. . Excellent Cross Modulation Characteristics. . All Electrodes. Insulated from Case.


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    PDF 2SC1164 -50hiA 200MHz -50mA 20011Hz IjIM11 2SC1164 2sc1164 O B298

    2SC116

    Abstract: 2sc1164
    Text: TOSHIBA St, {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO DE I ^ O T V E S O bfaC 07434 DDG7H34 0*T -3/-Q.) 2SC1164 SILICON NPN EPITAXIAL PLANAR TYPE_ _ Unit in ram HIGH POWER AMPLIFIER FOR CATV APPLICATIONS. 0â39M AX , 0&45M AX . FEATURES : . Wide Band and High Gain for Class A Amplifier.


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    PDF DDG7H34 2SC1164 2SC116 2SC116 2sc1164

    Untitled

    Abstract: No abstract text available
    Text: 2SA715 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO -126 MOD I 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B O


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    PDF 2SA715 2SC1162 D-85622