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    2SC162 Search Results

    2SC162 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC1623-T1B-A Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SC1622A-T1B-A Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SC1623-T1B-AT Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SC1623(0)-T1B-A Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SC1621-T1B-A Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
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    2SC162 Price and Stock

    Micro Commercial Components 2SC1623-L6-TP

    TRANS NPN 50V 0.1A SOT23
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    DigiKey 2SC1623-L6-TP Reel 9,000 3,000
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    Mouser Electronics 2SC1623-L6-TP 2,348
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    EVVO Semiconductor 2SC1623

    TRANS NPN 50V 0.1A SOT23
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    DigiKey 2SC1623 Cut Tape 2,684 1
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    2SC1623 Digi-Reel 2,684 1
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    2SC1623 Reel 3,000
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    Nextgen Components 2SC1623

    TRANS NPN 50V 0.1A SOT23
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    DigiKey 2SC1623 Reel 12,000
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    Micro Commercial Components 2SC1623-L5-TP

    Interface
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    DigiKey 2SC1623-L5-TP Bulk 3,000
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    Mouser Electronics 2SC1623-L5-TP 7,249
    • 1 $0.15
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    • 1000 $0.029
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    Comchip Technology Corporation Ltd 2SC1623-L7-HF

    TRANS NPN 0.1A 60V SOT-23
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    DigiKey 2SC1623-L7-HF Reel 3,000
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    Mouser Electronics 2SC1623-L7-HF
    • 1 $0.23
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    • 1000 $0.045
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    NAC 2SC1623-L7-HF 3,000
    • 1 $0.05
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    2SC162 Datasheets (223)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC162 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC162 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC162 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC162 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC162 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC162 Unknown Vintage Transistor Datasheets Scan PDF
    2SC162 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC162 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC1620 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC1620 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC1620 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC1620 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC1620 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC1620 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC1620 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC1621 Kexin NPN Silicon Epitaxial Transistor Original PDF
    2SC1621 NEC Semiconductor Selection Guide 1995 Original PDF
    2SC1621 NEC Semiconductor Selection Guide Original PDF
    2SC1621 TY Semiconductor NPN Silicon Epitaxial Transistor - SOT-23 Original PDF
    2SC1621 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    ...

    2SC162 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor marking D17

    Abstract: PT-200 2SC1622A
    Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC1622A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 High DC current gain. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base


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    PDF 2SC1622A OT-23 smd transistor marking D17 PT-200 2SC1622A

    500ma 40v pnp

    Abstract: 2sA814 datasheet 2SA814 2SA815
    Text: Inchange Semiconductor Product Specification 2SA814 2SA815 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1624/1625 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications


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    PDF 2SA814 2SA815 O-220 2SC1624/1625 O-220) 2SA814 -500mA 500ma 40v pnp 2sA814 datasheet 2SA815

    2SC1623 sot-23

    Abstract: 2SC1623 marking l4 sot-23 marking L6 MARKING L4 L6 sot-23 sot-23 Marking l7 top marking L6 SOT23 MARKING L7
    Text: 2SC1623 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 100 mA


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    PDF 2SC1623 OT-23 02-Aug-06 OT-23 2SC1623 sot-23 2SC1623 marking l4 sot-23 marking L6 MARKING L4 L6 sot-23 sot-23 Marking l7 top marking L6 SOT23 MARKING L7

    A817A

    Abstract: 2SA817A 2SC1627A
    Text: 2SA817A 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA817A ○ 励振段増幅用 ○ 電圧増幅用 単位: mm • 2SC1627A とコンプリメンタリになります。 • 30~35 W 用アンプのドライバに最適です。


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    PDF 2SA817A 2SC1627A O-92MOD 20070701-JA A817A 2SA817A 2SC1627A

    transistor c1627a

    Abstract: c1627a transistor c1627a 2SA817A 2SC1627A
    Text: 2SC1627A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC1627A Driver-Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SA817A. • Driver-stage applications for 30- to 35-watt amplifiers. Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SC1627A 2SA817A. 35-watt O-92MOD transistor c1627a c1627a transistor c1627a 2SA817A 2SC1627A

    2SA814

    Abstract: 2SA815 2SA815 y 2SC1624
    Text: SavantIC Semiconductor Product Specification 2SA814 2SA815 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1624/1625 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications


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    PDF 2SA814 2SA815 O-220 2SC1624/1625 O-220) 2SA814 -500mA 2SA815 2SA815 y 2SC1624

    2SC1626

    Abstract: 2SA816
    Text: SavantIC Semiconductor Product Specification 2SC1626 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SA816 APPLICATIONS ·Designed for the driver stages of 30-50W high-fidelity amplifiers and medium speed switching up to 2A peak current


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    PDF 2SC1626 O-220C 2SA816 0-50W O-220) 2SC1626 2SA816

    2SA812K

    Abstract: sot-23 Marking M6 M6 SOT23-3 marking of m7 diodes Diode marking m7 M6 Marking pnp m6 marking transistor sot-23 M6 transistor TRANSISTOR K 135
    Text: 2SA812K -50 V, -100 mA PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z Complementary to 2SC1623K High DC Current Gain: hFE = 200 TYP. VCE = -6V, IC = -1mA


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    PDF 2SA812K 2SC1623K OT-23 -100uA 100mA, -10mA 01-June-2002 2SA812K sot-23 Marking M6 M6 SOT23-3 marking of m7 diodes Diode marking m7 M6 Marking pnp m6 marking transistor sot-23 M6 transistor TRANSISTOR K 135

    2SC1623K

    Abstract: SOT-23-hg 2SC1623K-P sot-23 Marking l7 TRANSISTOR NPN 60V 600 MARKING CODE
    Text: 2SC1623K 0.1A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC current gain :hFE=200 Typ , VCE=6V, IC=1mA. High Voltage:VCEO=50V. A L 3 3 C B Top View


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    PDF 2SC1623K OT-23 2SC1623K-P 2SC1623K-Y 2SC1623K-G 2SC1623K-B 28-Jan-2011 2SC1623K SOT-23-hg 2SC1623K-P sot-23 Marking l7 TRANSISTOR NPN 60V 600 MARKING CODE

    NEC C11531E

    Abstract: 2SA812 2SC1623 C11531E C1984
    Text: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) ) • High Voltage: VCEO = −50 V +0.1


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    PDF 2SA812 2SC1623 C11531E) NEC C11531E 2SA812 2SC1623 C11531E C1984

    C1984

    Abstract: 2SC1623
    Text: DATA SHEET SILICON TRANSISTOR 2SC1623 NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V 0.4 +0.1 –0.05 2.8 ±0.2 +0.1 0.65 –0.15


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    PDF 2SC1623 C1984 2SC1623

    hFE-200

    Abstract: 2SC1623 l4 transistor l6 sot23 l5 transistors L5 SOT23 MARKING l7 transistor marking L6 l5 transistor SOT-23 marking l4 sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR NPN FEATURES z High DC current gain :hFE=200(Typ)VCE=6V, z High voltage:VCEO=50V 1. BASE IC=1mA 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF OT-23 OT-23 2SC1623 100mA hFE-200 2SC1623 l4 transistor l6 sot23 l5 transistors L5 SOT23 MARKING l7 transistor marking L6 l5 transistor SOT-23 marking l4 sot-23

    npn sot23 l6

    Abstract: 2SC1623 marking 2SC1623
    Text: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates


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    PDF 2SC1623-L6 2SC1623-L7 OT-23 npn sot23 l6 2SC1623 marking 2SC1623

    TRANSISTOR C 6090

    Abstract: TRANSISTOR C 6090 npn transistor 6090 hFE CLASSIFICATION Marking
    Text: 2SC1623 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage


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    PDF 2SC1623 OT-23 100mA 062in 300uS TRANSISTOR C 6090 TRANSISTOR C 6090 npn transistor 6090 hFE CLASSIFICATION Marking

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: 2SC1623
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC1623 Features • • NPN Silicon Epitaxial Transistors High DC Current Gain: hFE=200 TYP. V CE=6.0V, IC=1.0mA High voltage: VCEO=50V Maximum Ratings Symbol V CEO


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    PDF 2SC1623 OT-23 350us, Transistor hFE CLASSIFICATION Marking CE 2SC1623

    2sc1627a

    Abstract: No abstract text available
    Text: 2SC1627A TO-92MOD Transistor NPN TO-92MOD 1. EMITTER 1 2 3 5.800 6.200 2. COLLECTOR 8.400 8.800 3. BASE 0.900 1.100 Features — 0.400 0.600 13.800 14.200 Complementary to 2SA817A Driver Stage Application of 30 to 35 Watts Amplifiers — 1.500 TYP 2.900 3.100


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    PDF O-92MOD 2SC1627A O-92MOD 2SA817A 200mA 2sc1627a

    2SC1627

    Abstract: 2SA817
    Text: 2SC1627 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC1627 励振段増幅用 電力増幅用 単位: mm • 2SA817 とコンプリメンタリになります。 • 20~25 W 用アンプのドライバに適しています。


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    PDF 2SC1627 2SA817 SC-43 2SC1627 2SA817

    2SC1627A

    Abstract: No abstract text available
    Text: 2SC1627A SILICON NPN EPITAXIAL TYPE PCT PROCESS U nit in mm DRIVER STAGE AM PLIFIER APPLICATIONS. VOLTAGE AM PLIFIER APPLICATIONS. • • Complementary to 2SA817A. Driver Stage Application of 30 to 35 W atts Amplifiers. M A X IM U M R ATING S (Ta = 25°C)


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    PDF 2SC1627A 2SA817A. O-92MOD 2SC1627A

    Untitled

    Abstract: No abstract text available
    Text: 2SA817A TOSHIBA 2SA817A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • 5.1 MAX Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.


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    PDF 2SA817A 2SC1627A. 75MAX

    applications of single stage common emitter

    Abstract: 2SA817A 2SC1627A
    Text: TOSHIBA 2SA817A 2SA817A TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • 5.1 M A X Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.


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    PDF 2SA817A 2SC1627A. O-92MOD applications of single stage common emitter 2SA817A 2SC1627A

    Untitled

    Abstract: No abstract text available
    Text: • v - 7*- f t h NEC ' > U = i > h 7 > y x ^ S ilico n T ra n s is to r 2SC1623 N P N l t f ^ ^ y 7 M ^ > y n > b ^ > m ' s 7 > m $ m m e A - Ì 7 U 7 K lC fflt U T M J S T 'T o 0 2 S A 8 1 2 ¿; 3 > 7 ° U ;< 2 . 8 ± 0.2 1.5 U î f f f l f è t t o O h F E * '" l'o


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    PDF 2SC1623

    ge-2 transistor

    Abstract: No abstract text available
    Text: M C C TO-92MOD Plastic-Encapsulate T r a n s is t o r s ^ ^ 2SC1627A TRANSISTOR NPN FEATURES T O - 9 2 M O D P cm : 0.8W (Tam b=25“C ) current 1.E M IT T E R Ic m : 0.4 A 2.C O L L E C T O R vo lta ge 3.B A S E V(BR)CBO: 80 V M d s to ra g e ju n ctio n tem perature ran ge


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    PDF O-92MOD 2SC1627A ge-2 transistor

    Untitled

    Abstract: No abstract text available
    Text: M C C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ 2SC1623 TRANSISTOR NPN 1.BASE 2 .EMITTER 3.COLLECTOR FEATURES ^6%4rdlsslpation Pcm : 0.2 W (Tamb=25"C) Collector current ICM: H- 0.1A 2.4 Collector-base voltage V(br)cbo :60V Operating and storage Junction temperature range


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    PDF OT-23 2SC1623

    TC-1482A

    Abstract: TC1482 2SC1622A d18 nec marking D15 nec marking power amplifier 1482A HFE9 marking D18 2SC1622A-T2B D17
    Text: SILICON TRANSISTOR ELECTRON DEVICE 2SC1622A £ AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS in millimeters • High DC Current Gain: hFE = 600 TYP. VCE = 6.0 V , lc = 1.0 mA 2.8 ± 0.2 -g do


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    PDF 2SC1622A J22686 TC-1482A TC1482 2SC1622A d18 nec marking D15 nec marking power amplifier 1482A HFE9 marking D18 2SC1622A-T2B D17