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    2SC19 Search Results

    2SC19 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SC1941-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    2SC1941-T-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
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    2SC19 Price and Stock

    Panasonic Electronic Components 2SC19530S

    TRANS NPN 150V 0.05A TO126B-A1
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    Rochester Electronics LLC 2SC1941-AZ

    SMALL SIGNAL BIPOLAR TRANSTR NPN
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    DigiKey 2SC1941-AZ Bulk 1,353
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    Micro Commercial Components 2SC1959-O-AP

    TRANS NPN 30V 0.5A TO92
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    DigiKey 2SC1959-O-AP Ammo Pack
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    Micro Commercial Components 2SC1923-O-AP

    TRANS NPN 30V 0.02A TO92
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    Micro Commercial Components 2SC1923-R-AP

    TRANS NPN 30V 0.02A TO92
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    2SC19 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC19 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC19 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC19 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC19 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC19 Unknown Cross Reference Datasheet Scan PDF
    2SC19 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC19 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC19 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC190 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC190 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC190 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC190 Unknown Cross Reference Datasheet Scan PDF
    2SC190 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC190 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC190 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC190 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC1900 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC1900 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC1900 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC1900 Unknown Transistor Substitution Data Book 1993 Scan PDF
    ...

    2SC19 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC1913

    Abstract: 2SC1913A
    Text: Inchange Semiconductor Product Specification 2SC1913 2SC1913A Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA913/913A ・Large collector power dissipation ・High VCEO APPLICATIONS ・Audio frequency high power driver


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    PDF 2SC1913 2SC1913A O-220 2SA913/913A O-220) 2SC1913 2SC1913A

    2SA771

    Abstract: 2SA770 2SA7 2SC1985
    Text: Inchange Semiconductor Product Specification 2SA770 2SA771 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1985/1986 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING


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    PDF 2SA770 2SA771 O-220 2SC1985/1986 O-220) 2SA770 2SA771 2SA7 2SC1985

    2SC1942

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC1942 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage ・High speed switching APPLICATIONS ・For TV horizontal output applications PINNING See Fig.2 PIN DESCRIPTION


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    PDF 2SC1942 2SC1942

    2SC1986

    Abstract: 2SC1985
    Text: Inchange Semiconductor Product Specification 2SC1985 2SC1986 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA770/771 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING


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    PDF 2SC1985 2SC1986 O-220 2SA770/771 2SC1985 2SC1986

    2SA771

    Abstract: 2SA770
    Text: JMnic Product Specification 2SA770 2SA771 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC1985/1986 ・Low collector saturation voltage APPLICATIONS ・For general and industrial purpose applications PINNING PIN DESCRIPTION


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    PDF 2SA770 2SA771 O-220 2SC1985/1986 O-220) 2SA770 2SA771

    2SC1942

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SC1942 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage ・High speed switching APPLICATIONS ・For TV horizontal output applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter


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    PDF 2SC1942 2SC1942

    2SA914

    Abstract: 2SC1953
    Text: Product Specification www.jmnic.com 2SA914 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1953 ・Good linearity of hFE ・High VCEO APPLICATIONS ・For audio frequency power pre-amplifier PINNING PIN DESCRIPTION


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    PDF 2SA914 O-126 2SC1953 -30mA -100V; -10mA 2SA914 2SC1953

    2SC1980

    Abstract: TRANSISTOR 2SC1980 2SA921
    Text: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA921 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings Ta=25˚C Parameter


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    PDF 2SC1980 2SA921 2SC1980 TRANSISTOR 2SC1980 2SA921

    2SC1986

    Abstract: 2SC1985
    Text: SavantIC Semiconductor Product Specification 2SC1985 2SC1986 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA770/771 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING


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    PDF 2SC1985 2SC1986 O-220 2SA770/771 2SC1985 2SC1986

    2SC1942

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC1942 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·For TV horizontal output applications PINNING See Fig.2 PIN DESCRIPTION 1 Base


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    PDF 2SC1942 2SC1942

    2SA913

    Abstract: 2SA913A 2SC1913 IC03A 2sa913 r
    Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA913 2SA913A DESCRIPTION •With TO-220 package ·Complement to type 2SC1913/1913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver


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    PDF 2SA913 2SA913A O-220 2SC1913/1913A O-220) 2SA913 2SA913A 2SC1913 IC03A 2sa913 r

    2SC1986

    Abstract: 2SA771
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA771 DESCRIPTION •Collector-Emitter Breakdown Voltage:V BR CEO= -80(V)(Min.) ·Complement to Type 2SC1986 APPLICATIONS ·Designed for audio and general purpose applications.


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    PDF 2SA771 2SC1986 -25mA; 2SC1986 2SA771

    2SA0914

    Abstract: 2SC1953
    Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type Unit: mm For low-frequency power pre-amplification Complementary to 2SA0914 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 4.6±0.2 Symbol Rating Unit VCBO 150 V Collector to emitter voltage VCEO 150


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    PDF 2SC1953 2SA0914 2SA0914, O-126B 2SA0914 2SC1953

    2SC1955

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC1955 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. 0S59MAX. g ja 4 5 M A X . FEATURES : Output Power : f=175MHz, Po=2.8W (Min. Vcc=13.5V, Pi=0.15W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR


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    PDF 2SC1955 175MHz, 0S59MAX. 175MHz -30pF 2SC1955

    2SC1955

    Abstract: toshiba Choke
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sh <DI S C R E T E /O P T O iòC DE 1 ^ 0 ^ 7 5 5 0 □□074b4 û J Ü7464- D y 2SC1955 SI LICO N NPN E P IT A X IA L P L A N A R TYPE I Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. g fa FEATURES • • . •


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    PDF 074b4 2SC1955 175MHz, 175MHz J2fa39MAX. 175MHz 75MHz toshiba Choke

    25X2

    Abstract: 2SA770 2SA771 w506
    Text: AOK AOK Semiconductor Product Specification 2SA770 2SA771 S ilicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complément to type 2SC1985/1986 • Low collector saturation voltage APPLICATIONS - /♦*. i * F o r g e n e ra l and in d u stria l


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    PDF 2SA770 2SA771 O-220 2SC1985/1986 O-220) 2SA771 25X2 w506

    2SC1905

    Abstract: ic5 321
    Text: Power T ransistors 2SCl?QS H 2SC1905(H) Silicon PNP Triple-Diffused Planar Type Package’Dimensions Horizontal Deflection Driver for Color TV set Unit,! mm • Features • High collector-emitter voltage 1 0 .5 ± 0 .5 ( V ceo ) • Large collector power dissipation (Pc)


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    PDF 2SC1905 ic5 321

    2SA914

    Abstract: 2SC1953
    Text: Power Transistors 2SA914 2SA914 Silicon PNP Epitaxial Planar Type • Package Dimensions AF Power Pre-amplifier Complementary Pair with 2SC1953 ■ Features • Good linearity of DC cu rre n t gain • High collector-em itter voltage V (Iife ceo ) • Low collector output capacitance (Cot)


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    PDF 2SA914 2SC1953 O-126 100MHi 2SA914 2SC1953

    BDY20

    Abstract: BU208A BU608 2SD870 2S01168 2S0200 BDY38 BU208 2SC1942 2SD1168
    Text: TO-3 Power Package Transistors NPN Max mum F atings Type No. V CBO V CEC V E0C (V) Min (V) Min (V) Min 2SC1942 1500 2SD 1168 1500 2SD 1168P 1500 800 Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) PD <W) t (A) @Tc=25° 'c a o (MA) V CB


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    PDF 2SC1942 2SD1168 2SD1168P 2SD1168Q 2SD200 2SD870 2SD871 BU205 BU207 BU208 BDY20 BU208A BU608 2S01168 2S0200 BDY38 BU208

    27mhz rf ic

    Abstract: 2SC1944 T30 transistor 27mhz transistor 27mhz rf amplifier T-30
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor Dimension in mm designed for RF power amplifiers on HF bandmobile radio applications. FEATURES • High power gain : Gpe S 11 dB, @ Vcc = 12V, f = 27MHz,


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    PDF 2SC1944 2SC1944 27MHz, T0-220 27MHz 27mhz rf ic T30 transistor 27mhz transistor 27mhz rf amplifier T-30

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC1959 2SC1959 TO SHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY LO W POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SW ITCHING APPLICATIONS • . 5.1 M A X . Excellent hpg Linearity : hpE (2) = 25 (Min.) : V çe = 6V, Iç = 400mA


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    PDF 2SC1959 400mA 2SA562TM.

    2SC1946A

    Abstract: 2SC-1946A u3020 470q
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1946A N PN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC1946A is a silicon NPN epitaxial planar type transistor de­ signed fo r RF power amplifiers on VHF band mobile radio applications. D im e n sio n s in m m FEATURES


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    PDF 2SC1946A 2SC1946A 175MHz 175MHz. 175MH2 2SC-1946A u3020 470q

    2SC1970

    Abstract: 2sc1970 transistor T-30 parameters S transistor NPN
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1970 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1970 is a silicon NPN epitaxial planar typ e transistor designed Dimensions in mm fo r RF power am plifiers on V H F band m obile radio applications. 9.1 ± 0 .7


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    PDF 2SC1970 2SC1970 2sc1970 transistor T-30 parameters S transistor NPN

    tt 2144

    Abstract: 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947
    Text: - m « Type No. & M £ Manuf. SANYO £ TOSHIBA 2SC 2117 m B NEC 2SC 2119 2SC 2120 y 2SC 2121 f 2SC 2122 2SC 2123 M S M M £ M ^ M £ M ÌE «S T MATSUSHITA 2SC2001 2SD734 2SC1947 2SC 2129 = 2SC 2130 = m m 2SC 2131 H s 2SC1001 2SC2762 2SC 2132 , = m 2SC2381


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    PDF 2SC1947 2SC1965 2SC2078 2SB858 2SD734 2SC2001 2SD467 2SC1383 2SC3580 2SC3377 tt 2144 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947