2SC2120
Abstract: 2SA950
Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics
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2SC2120
2SA950
SC-43
2SC2120
2SA950
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2SA950
Abstract: 2SC2120
Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SC2120
2SA950
SC-43
2SA950
2SC2120
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2SC2120Y
Abstract: 2SC2120 2SC2120-Y
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2120-O 2SC2120-Y Features x x x x Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability rating
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2SC2120-O
2SC2120-Y
2SA950
2SC2120Y
2SC2120
2SC2120-Y
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2SC2120
Abstract: 2SA950
Text: 2SC2120 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC2120 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • B 型プッシュプルで 1 W の出力が得られます。
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2SC2120
2SA950
SC-43
2SC2120
2SA950
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2120-O 2SC2120-Y Features x x x x Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability rating
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2SC2120-O
2SC2120-Y
2SA950
150rom
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0.6 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.8 A Collector-base voltage V(BR)CBO:
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2SC2120
100mA
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2SA950
Abstract: 2sa950y 2SA950-Y 2sc212 2SA950 PNP 2SA950-O 2SC2120
Text: 2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES 1W output applications Complementary to 2SC2120 G H Emitter Collector Base
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2SA950
2SC2120
2SA950-O
2SA950-Y
14-Feb-2011
-10mA,
-100mA
-700mA
-500mA,
-20mA
2SA950
2sa950y
2SA950-Y
2sc212
2SA950 PNP
2SA950-O
2SC2120
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2SC2120
Abstract: No abstract text available
Text: DC COMPONENTS CO., LTD. 2SC2120 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base o
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2SC2120
500mA,
100mA,
2SC2120
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2SC2120
Abstract: 2SC2120Y 2SC2120-Y 2SC2120-O 2sc212 2SC2120-0 2SA950 2SC2120O 2SC2120Y transistor 2sC2120 transistor
Text: 2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High DC Current Gain Complementary to 2SA950 G H J CLASSIFICATION OF hFE Product-Rank
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2SC2120
2SA950
2SC2120-O
2SC2120-Y
500mA,
28-Jan-2011
100mA
2SC2120
2SC2120Y
2SC2120-Y
2SC2120-O
2sc212
2SC2120-0
2SA950
2SC2120O
2SC2120Y transistor
2sC2120 transistor
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2SC2120
Abstract: 2sC2120 y transistor transistor 2sc2120
Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC2120
700mA
500mA,
2SC2120
2sC2120 y transistor
transistor 2sc2120
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Plastic Encapsulate Transistors
Abstract: 2SC2120 2sc2120 equivalent
Text: 2SC2120 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 1 2 Value Units VCBO Collector-Base Voltage
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2SC2120
100mA
01-Jun-2002
Plastic Encapsulate Transistors
2SC2120
2sc2120 equivalent
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2SA950
Abstract: 2SC2120
Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SA950
2SC2120
SC-43
2SA950
2SC2120
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W Output Applications y Complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol
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2SA950
2SC2120
-10mA
-100mA
-700mA
-500mA,
-20mA
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2SC2120
Abstract: 2sc2120 equivalent
Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC2120
100mA
700mA
500mA,
2SC2120
2sc2120 equivalent
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Untitled
Abstract: No abstract text available
Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating
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2SA950
2SC2120
SC-43
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR（ NPN ） TO—92 FEATURE Power dissipation PCM : 0.6 W（Tamb=25℃） Collector current ICM : 0.8 A Collector-base voltage V BR CBO : 35 V Operating and storage junction temperature range
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2SC2120
270TYP
050TYP
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2SA950 PNP
Abstract: 2SA950 2SC2120 35VCEO
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W output applications y complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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2SA950
2SC2120
-100mA
-700mA
-500mA,
-20mA
-10mA
2SA950 PNP
2SA950
2SC2120
35VCEO
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2SC2120
Abstract: 2sc2120 equivalent 2sC2120 y transistor
Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC2120
100mA
700mA
500mA,
2SC2120
2sc2120 equivalent
2sC2120 y transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC2120 TRANSISTOR NPN 1. EMITTER FEATURES z High DC Current Gain z Complementary to 2SA950 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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2SC2120
2SA950
100mA
500mA
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Untitled
Abstract: No abstract text available
Text: 2SC2120 TOSHIBA TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 7sr ? 1 ? n Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • High hpE : hpg (i) = 100-320 1 Watts Amplifier Applications. Complementary to 2SA950 . 5.1 M AX. 0.45 0.55 M A X.
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2SC2120
2SA950
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2SC2120
Abstract: ZZ25 2SA950 ZZ25IZI
Text: TOSHIBA_ 2SC2120 2 S C 2 1 20 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • High hpE • hpE (l) = 100—320 1 Watts Amplifier Applications.
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2SC2120
2SA950
SC-43
ZZ25IZI
2SC2120
ZZ25
2SA950
ZZ25IZI
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2SD811 TOSHIBA
Abstract: 2SC510 2SD2061 2SD877 RY 228 2SD2023 2SD1270 2SD880 2SC2120 2SD867
Text: * * * * * * i * * * * * * * * * * * * * * * M anuf. a m. X 3E •y-y'ry y-y'ry ■v-yry ■y-yry ■y-yírv yyry € h SANYO 2SD313 2SD313 n jft ^ TOSHIBA 2SC2120 2SD880 2SD880 2SC510 2SC510 2SC510 2SD877 2SD877 2SD877 NEC 2SD795 2SD795 M AL HITACHI 2SC1213
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2SD228
2SD234
2SD235
2SC236
2SD237
2SD238
2SD241
2SD242
2SD243
2SD244
2SD811 TOSHIBA
2SC510
2SD2061
2SD877
RY 228
2SD2023
2SD1270
2SD880
2SC2120
2SD867
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2SA950
Abstract: 2SC2120
Text: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hRE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)
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OCR Scan
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PDF
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2SA950
2SC2120
SC-43
2SA950
2SC2120
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hpE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)
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2SA950
2SC2120
SC-43
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