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    2SC2458 TRANSISTOR Search Results

    2SC2458 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SC2458 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2458

    Abstract: 2sc2458 transistor 2sc2458 equivalent 2SA1048 transistor 2SC2458
    Text: 2SC2458 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2458 Audio Amplifier Applications Unit: mm • High current capability: IC = 150 mA (max) · High DC current gain: hFE = 70~700 · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


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    PDF 2SC2458 2SA1048. 2SC2458 2sc2458 transistor 2sc2458 equivalent 2SA1048 transistor 2SC2458

    2SC2458 GR

    Abstract: 2SC2458 2SA1048
    Text: 2SC2458 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Low Noise Audio Amplifier Applications • High current capability: IC = 150 mA (max) • High DC current gain: hFE = 70~700 Unit: mm • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


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    PDF 2SC2458 2SA1048 2SC2458 GR 2SA1048

    2SC2458

    Abstract: transistor 2SC2458
    Text: 2SC2458 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2458 Audio Amplifier Applications Unit: mm • High current capability: IC = 150 mA (max) • High DC current gain: hFE = 70~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


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    PDF 2SC2458 2SA1048. 2SC2458 transistor 2SC2458

    2SC2458

    Abstract: 2sa1048
    Text: 2SC2458 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2458 Audio Amplifier Applications Unit: mm • High current capability: IC = 150 mA (max) • High DC current gain: hFE = 70~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


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    PDF 2SC2458 2SA1048. 2SC2458 2sa1048

    2SC2458

    Abstract: transistor 2SC2458 2sc2458 transistor 2SA1048
    Text: 2SC2458 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Low Noise Audio Amplifier Applications Unit: mm • High current capability: IC = 150 mA (max) · High DC current gain: hFE = 70~700 · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


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    PDF 2SC2458 2SA1048 transistor 2SC2458 2sc2458 transistor 2SA1048

    2SC2458

    Abstract: transistor 2SC2458 2SA1048
    Text: 2SC2458 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Low Noise Audio Amplifier Applications • High current capability: IC = 150 mA (max) • High DC current gain: hFE = 70~700 Unit: mm • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


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    PDF 2SC2458 2SA1048 transistor 2SC2458 2SA1048

    2SC2458-GR

    Abstract: 2SC2458GR 2SC2458Y 2SC2458
    Text: MCC TM Micro Commercial Components 2SC2458-Y 2SC2458-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Lead Free Finish/Rohs Compliant "P"Suffix designates


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    PDF 2SC2458-Y 2SC2458-GR 100mA, 10Vdc, 2SC2458-GR 2SC2458GR 2SC2458Y 2SC2458

    2sa1048 transistor

    Abstract: transistor 2sa1048 hFE-200 transistor PNP 2sc2458 equivalent 2SA1048 2SC2458 2SA104
    Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.


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    PDF 2SA1048 2SC2458 100mA, 2sa1048 transistor transistor 2sa1048 hFE-200 transistor PNP 2sc2458 equivalent 2SA1048 2SA104

    2sa1048 transistor

    Abstract: 2SA1048 2sc2458 equivalent 2SC2458
    Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.


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    PDF 2SA1048 2SC2458 100mA, 2sa1048 transistor 2SA1048 2sc2458 equivalent

    2SC2458GR

    Abstract: 2SC2458Y 2sc2458 2SC2458-Y 2SC2458 GR 2SC2458G 2SC2458-GR
    Text: MCC TM Micro Commercial Components 2SC2458-Y 2SC2458-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Lead Free Finish/Rohs Compliant "P"Suffix designates


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    PDF 2SC2458-Y 2SC2458-GR 625oC/W 2SC2458GR 2SC2458Y 2sc2458 2SC2458 GR 2SC2458G 2SC2458-GR

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC2458-Y 2SC2458-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Lead Free Finish/Rohs Compliant "P"Suffix designates


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    PDF 2SC2458-Y 2SC2458-GR 625oC/W O-92S

    2sc2458 equivalent

    Abstract: 2SC2458
    Text: ST 2SC2458 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF 2SC2458 100mA, 2sc2458 equivalent 2SC2458

    2SC2458

    Abstract: 2sc2458 equivalent 2SA1048
    Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.


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    PDF 2SA1048 2SC2458 100mA, 2sc2458 equivalent 2SA1048

    2sa1048 transistor

    Abstract: 2sc2458 equivalent 2SA1048 2SC2458
    Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.


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    PDF 2SA1048 2SC2458 100mA, 2sa1048 transistor 2sc2458 equivalent 2SA1048

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2458 TOSHIBA TRANSISTOR AUDIO AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458 U nit in mm 4.2 MAX. • High C urrent Capability : I q = 150mA (Max.) • High DC C urrent Gain hpE —70—700 • Excellent hpE Linearity :


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    PDF 2SC2458 150mA 2SA1048.

    2SC2458

    Abstract: transistor 2SC2458 2SA1048
    Text: TOSHIBA 2SC2458 TOSHIBA TRANSISTOR AUDIO AMPLIFIER APPLICATIONS. • • • • • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458 Unit in mm High Current Capability : Iç; = 150mA (Max.) High DC Current Gain : hjn;E = 70—700 Excellent hjpg Linearity


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    PDF 2SC2458 150mA 2SA1048. 2SC2458 transistor 2SC2458 2SA1048

    C 2458

    Abstract: 2SA1048 2SC2458 transistor 2SC2458
    Text: TO SH IBA 2SC2458 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458© Unit in mm AUDIO AMPLIFIER APPLICATIONS LOW NOISE AUDIO AMPLIFIER APPLICATIONS 4.2MAX. High Current Capability : Iç; = 150mA (Max.) High DC Current Gain : 1ife = 70~700


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    PDF 2SC2458Â 150mA 2SA1048Â -55truments, C 2458 2SA1048 2SC2458 transistor 2SC2458

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2458 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458© Unit in mm AUDIO AM PLIFIER APPLICATIONS LO W NOISE AUDIO AM PLIFIER APPLICATIONS ^ 4.2M AX. . —I High Current Capability Iß = 150mA (Max.) High DC Current Gain hjPE = 70~700


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    PDF 2SC2458Â 150mA 2SA1048L.

    2SC2458

    Abstract: low noise audio amplifier 2SA1048
    Text: T O S H IB A 2SC2458 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458© Unit in mm AUDIO AM PLIFIER APPLICATIONS LO W NOISE AUDIO AM PLIFIER APPLICATIONS 4.2M AX. High Current Capability 10 = 150mA (Max.) High DC Current Gain hEE = 70-700


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    PDF 2SC2458Â 150mA 2SA1048Â 270Hz, 2SC2458 low noise audio amplifier 2SA1048

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2458 TOSHIBA TRANSISTOR AUDIO AMPLIFIER APPLICATIONS. • • • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458 High Current Capability : Iç = 150mA (Max.) High DC Current Gain : h;pE = 70—700 Excellent hpE Linearity : hFE (Ic = o.lmA) 1hFE (Ic = 2mA) = 0-95 (TyP-)


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    PDF 2SC2458 150mA 2SA1048.

    2SC2458

    Abstract: 2SA1048
    Text: TO SH IBA 2SC2458 TOSHIBA TRANSISTOR AUDIO AMPLIFIER APPLICATIONS. • • • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458 Unit in mm 4.2MAX. 10 = 150mA (Max.) High Current Capability High DC Current Gain hpE —70—700 Excellent hjpg Linearity : hF'E (le = O.imÀ) ' hF'E (Ic = 2mA) =. Au-ao u/ r py_p .)


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    PDF 2SC2458 150mA 2SA1048. 2SC2458 2SA1048

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2458 TOSHIBA TRANSISTOR AUDIO AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458 Unit in mm 4.2MAX. Iß = 150mA (Max.) High Current Capability High DC Current Gain hEE = 70—700 Excellent hpE Linearity : hFE (Ic = o.lmA) 1hFE (Ic = 2mA) = 0-95 (TyP-)


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    PDF 2SC2458 150mA 2SA1048.

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


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    PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    transistor 2SC2458

    Abstract: transistor2SC2458
    Text: TOSHIBA TRANSISTOR SEM ICO NDU CTO R 2SC2458 TnCUIDA • w w ■I I TECHNICAL DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC2458©) AUDIO AM PLIFIER APPLICATIONS U n it in mm LOW NOISE AUDIO AM PLIFIER APPLICATIONS 4.2MAX. • H igh C urrent C ap ab ility : 1 q = 150mA (M ax.)


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    PDF 2SC2458© 150mA 2SA1048© transistor 2SC2458 transistor2SC2458