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    2SC2562 TOSHIBA Search Results

    2SC2562 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    2SC2562 TOSHIBA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC2562

    Abstract: 2SC2562 Toshiba
    Text: 2SC2562 SILICON NPN EPITAXIAL TYPE INDUSTRIAL APPLICATIONS _ Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1D.3MAX. FEATURES: 0 3-6±0.3 • Low Collector Saturation Voltage : vCE sat =0-4v (Max-) (at IC=3A) • High Speed Switching Time : ts tg=1.0iJS (Typ.)


    OCR Scan     		2SC2562 2SA1012. -55vL50 12CK240 7CH140, 2SC2562 2SC2562 Toshiba PDF

    2SC2562

    Abstract: 2SC2562 Toshiba
    Text: 2SC2562 SILICON NPN EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in m m HIGH CURRENT SW IT C H IN G APPLICATIONS. • • • Low Collector Saturation Voltage : v CE(sat) = °-4V (Max.) (at Ic= 3A ) High Speed Switching Time : tgtg=1.0,us (Typ.)


    OCR Scan     		2SC2562 2SA1012. O-220AB SC-46 2-10A1A 2SC2562 2SC2562 Toshiba PDF

    Untitled

    Abstract: No abstract text available
    Text: ~5h TOSHIBA { D IS CR ETE/O PT O} 9097250 TOSHIBA <DISCRETE/OPTO 2SC2562 DE I T D T T E S D □ □ □ 7 S S Eì fl | ' L)7 - 3 ¿ - o f J7559 SILICON NPN EPITAXIA L TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS _ Unit in mm HIGH CURRENT SWITCHING APPLICATIONS.


    OCR Scan     		2SC2562 J7559 2SA1012. PDF

    nec 2401

    Abstract: nec 2405 NEC 2415 nec 2412 2SC2509 2SC2320 2SC1218 2sc2312 2SC2724 2SC2508
    Text: - tt - 2SC 2388A 2SC 2389 ^ 2SC 2 3 9 0 ^ 2SC 2391 2SC 2392 s a *±a □— A □— A 2SC3040 2SC2Û75 2SD743 £ 2SC2562 2SC2634 2SD812 2SC1645 2SC3802K 2SC2619 2SC3124 2SC2755 2SC2812 2SC3324 2SC1622A 2SC2462 2SC241 2 K L N 2SC2312 2SC3324 2SC1622A 2SC2463


    OCR Scan     		2SC2387 2SC3040 2SC2740 2SC2631 2SC2634 2SC2139 2SC2362K 2SC2362 2SC2286-KA 2SC2380 nec 2401 nec 2405 NEC 2415 nec 2412 2SC2509 2SC2320 2SC1218 2sc2312 2SC2724 2SC2508 PDF

    2SC2562

    Abstract: 2SC2562 Toshiba 2SA1012 AC75 K240
    Text: ~5b TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA <DI S C R E T E / O P T O 2SC2562 DE 1 ^ 0 ^ 7 2 5 0 □ □□755E1 A | ‘ O j -•3 3 , 0 ^ J7559 S IL IC O N NPN E P IT A X IA L TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS _ Unit in mm HIGH CURRENT SWITCHING APPLICATIONS.


    OCR Scan     		J7559 2SC2562 2SA1012. 11I1II 2SC2562 Toshiba 2SA1012 AC75 K240 PDF

    2SC3258

    Abstract: 2SC3950 2SC3209 3918 2SC4116 2sc2562 2SC3958 2SC3874 2SC4211 2SD667
    Text: - £ Type No. 2SC 3927 £ Manuf. ^ H B ft SANYO TOSHIBA -yy'ry 2SC3Q90 2SC4157 2SC 3928 = Ü 2SC2812 2SC2712 2SC 3929 / 2SC4211 2SC4116 2SC4211 2SC4211 2SC 3931 fé T fé T fé T fé T 2SC 3932 fé 2SC 3933 2SC4853 2SC 3935 fé T fé T fé T 2SC 3936 fé T


    OCR Scan     		2SC3090 2SC4157 2SC2812 2SC2712 2SC1623 2SC2463 2SD601A 2SC2412K 2SC4211 2SC4116 2SC3258 2SC3950 2SC3209 3918 2SC4116 2sc2562 2SC3958 2SC3874 2SD667 PDF

    SC3150

    Abstract: c2979 3171 s 2sc3153 2sc4044s 2SD1390 2SC3174 2sc3180n 2SC3344 2sd1335
    Text: - m % tt Type No. £ Manuf. 2SC 3151 =- ft ft 2SC 3152 . s. n 2SC 3 1 5 3 / 3 ft 2 SC 3150 n SANYO TOSHIBA 2SC2792 2SC2792 2SC 3154 X = ft 2SC3151 2SC2790 H n 2SC3152 2SC2790 2SC 3156 ^ = ft 2SC3153 2SC2791 a n B « 2SC3039 2SC3236 2SC 3159 CD 2SC3344 2SC 3160


    OCR Scan     		2SC3148 2SC2979 2SC2792 2SC4359 2SC3322 2SC3981 2SC3151 2SC2790 SC3150 c2979 3171 s 2sc3153 2sc4044s 2SD1390 2SC3174 2sc3180n 2SC3344 2sd1335 PDF

    2SD650

    Abstract: 2SC4711 MG30G1BL3 2SD670 hitachi 2SD731 2SD670 2SD837B 2SD678 2sd699 2SD683
    Text: - 22 0 - tt M € Type No. « Manuf. SANYO 2SD 677 K 2 TOSHIBA m NEC HITACHI ll * ± a FUJITSU tö T MATSUSHITA MITSUBISHI □ — A ROHM 2SD2132 2SC2139 2SD 678A fö T 2SC3144 2SD635 2SD560 2SD1275A 2SD1932 2SD 679A tö T 2SD1190 2SD634 2SD560 2SD1276A 2SD1932


    OCR Scan     		2SC2139 2SD213Z 2SC3144 2SD635 2SD560 2SD1275A 2SD1932 2SD1190 2SD634 2SD650 2SC4711 MG30G1BL3 2SD670 hitachi 2SD731 2SD670 2SD837B 2SD678 2sd699 2SD683 PDF

    2SA1012

    Abstract: 2SA1293 2SC2562 2SC3258
    Text: TOSHIBA Powered by TO-220-AB 20 20 40 40 75 75 40 40 60 80 80 100 100 20MIN. 10MIN. 10MIN. 10MIN. 8-40 8-40 12MIN. 10MIN. 10MIN 5-30 5-30 6-30 6-30 7 10 2SA1328 2SA1329 12 2 3 4 5 8 8 12 5 5 5 5 5 5 5 5 5 5 5 5 5 0.1 0.5 0.5 0.8 2 2 3 3 4 5 5 8 8 1 1 1 0.6


    OCR Scan     		08S87 20MIN. 2SA1012 2SA1293 2SC2562 2SC3258 PDF

    2sc2562

    Abstract: 2SA1012 A101 AC75 2SC2562 Toshiba
    Text: 2SA1012 TOSHIBA 2 S A 1 012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. • • • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat) = —0.4V (Max.) at I q = -3 A High Speed Switching Time : tgtg^l.O/^siTyp.)


    OCR Scan     		2SA1012 2SC2562. O-220AB SC-46 2-10A1A 100Xl00X2mm 2sc2562 2SA1012 A101 AC75 2SC2562 Toshiba PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 Q1 2 HIGH CURRENT SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat)= “ 0*4V (Max.) at 1q = -3 A Hieh Speed Switching Time : tc,+rr= l.Ows(Tvd.)


    OCR Scan     		2SA1012 2SC2562. O-220AB SC-46 2-10A1A --10mA, 200x200x2mm PDF

    transistor Ic 1A

    Abstract: No abstract text available
    Text: 2SA1012 TO SH IBA 2 S A 1 012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. • • • INDUSTRIAL APPLICATIONS Unit in mm « ii MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage


    OCR Scan     		2SA1012 2SC2562. O-220AB SC-46 2-10A1A --50V, transistor Ic 1A PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1012 2 S A 1 012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat)= -0.4V (Max.) at Ic = -3 A High Speed Switching Time : ts^ = 1 .0 (as(Typ.)


    OCR Scan     		2SA1012 2SC2562. 50X50X2mm PDF

    1012 TOSHIBA

    Abstract: 2sc2562 2SA1012 A101 AC75
    Text: TO SH IBA 2SA1012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 012 HIGH CURRENT SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm jZ>3.6±0.2 .1 0 .5 MAX Low Collector Saturation Voltage : v CE(sat)= - ° - 4V (Max.) at I q = - 3 A


    OCR Scan     		2SA1012 2SC2562. 1012 TOSHIBA 2sc2562 2SA1012 A101 AC75 PDF

    2SD1555

    Abstract: 2SB1833 2SD1876 2SD1878 2SD772 nec 2sc2562 2SD1406 2SD1546 ZSD15 2SD1548
    Text: - Si € Type No. 2SD 18S3^-2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2S0 1584 *•" 1885 ^ 1886 y 1887 ^ 1888 , 1889 / 1890 ^ 1891 1892 1896 189? 1898 * 2SD 2SD 2SD 2SD 2SD 2S0 2SD 2SD 1899 ~ 1899-Z 1900 1901 1902 „ 1903 * 1904 J 1905 ^ 2SD 2SD 2S0 2S0


    OCR Scan     		2SD1883 1899-Z 2SD1544 2SD1545 2SD1546 2SD1547 2SD1548 2SD2293 2SD2295 2SD2298 2SD1555 2SB1833 2SD1876 2SD1878 2SD772 nec 2sc2562 2SD1406 ZSD15 2SD1548 PDF

    TE 1539

    Abstract: 2sc2233 2sd1314 2SC4008 1537A 2sc2562 2sc4152 2SD1405 2SD1539 2SC2459
    Text: - m -s Type No. 2SD 1510/ 2SD 1511 2SD 1512 2SD 1513 ^ 2SD 1514 2SD 1516 ¿ 2SD 1517 2SD 1518 2SD 1519 2SD 1520 2SO 1520 L/S icri 1co i 2SD 2S0 2SD 2SO 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 1522 1523 1524 1526 1527 / 1528 1529


    OCR Scan     		2SD1510 2SD1511 2SD1512 2SD1513 2SD1514 2SD1516 2SD1517 2SD1518 2SD1519 2SD1520 TE 1539 2sc2233 2sd1314 2SC4008 1537A 2sc2562 2sc4152 2SD1405 2SD1539 2SC2459 PDF

    2sc2460b

    Abstract: 2SC1957 2SC2320 25C945 2SC945 25c1815 2SC2313 2SC2560 2SC2499 2SC1815
    Text: - m s T y p e No. € tt M anuf. i f v ît y i f y *r y 2 SC 2307 y - y 'r y 2SC 2308— 2SC 2309 -*- ED CD l=h 14 2SC 2305 2SC 2306«. 2SC 2310 • 2SC 2311 'Mitrii 2SC 2313 ' « H* •tf- 2SC 2314 2SC 2 3 1 5 ^ ' ÎL = * SANYO 2SC 2SC 2322 ŸÀ T MATSUSHITA


    OCR Scan     		2SC3040 2SD641 2SC2819 2SC3042 2SC2751 2SC2740 2SC3331 2SC1815 2SC945 2SC3311A 2sc2460b 2SC1957 2SC2320 25C945 2SC945 25c1815 2SC2313 2SC2560 2SC2499 PDF

    SD 1083

    Abstract: SD1087 2SD1084 2sd1033 2SD1238 2sd1245 2SD987 2SD772B 2SD1706 2SD1134
    Text: 230 - m « Type No. 2SD 1055 ^ =fet □— A 2SD 1059 ✓ 2SD 1060 2SD 1061 ^ 2SD 1062 2SD 1 0 6 3 * * é ?sn inß* , 2 SD 106 5 - 2 SD 1067 2SD 1069 € Manuf. m = = & E & E & E ß E Pß E # M 'S. 2SD 1070 2SD 1071 n±m m 2 SD 1072 m ±w » 2 SD 1073 « ± s «


    OCR Scan     		2SD1055 2SD1246 2SD613 2SD525 2SC2562 2SD843 2SD1137 2SD1134 2SD743 2SD568 SD 1083 SD1087 2SD1084 2sd1033 2SD1238 2sd1245 2SD987 2SD772B 2SD1706 2SD1134 PDF

    1012 TOSHIBA

    Abstract: 2sc2562 2SA1012 AC75 2sa101
    Text: TOSHIBA 2SA1012 2 S A 1 012 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat)= -0 .4 V (Max.) at Iq = -3 A High Speed Switching Time : ts^ = 1.0(« s(Typ.)


    OCR Scan     		2SA1012 2SC2562. O-220AB SC-46 2-10A1A ----50V, 50X50X2m 1012 TOSHIBA 2sc2562 2SA1012 AC75 2sa101 PDF

    sc 3228

    Abstract: C3468 2SD2159 2SC 3205 2SD880 2SC3296 2sc3192 2SC2320 c2981 2SD1812
    Text: - 15 6 - §ä « T y p e No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »H m ? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * ' 2SC 3193 / 2SC 3194 2SC 3195 ¿ 2 SC 3196 h n T O S HIBA «am i »am ? 2SC 3199 X


    OCR Scan     		2SC3186 2SC3187 2SC3189 2SC3190 2SC3191 2SC3192 2SC3193 2SC3194 2SD1085 2SC3468 sc 3228 C3468 2SD2159 2SC 3205 2SD880 2SC3296 2sc3192 2SC2320 c2981 2SD1812 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PN P EPITAXIAL T Y P E PC T P R O C ESS 2 S A 1 1 2 INDUSTRIAL APPLICATIONS U nit in mm HIGH CURRENT SWITCHING APPLICATIONS. lCLSM AX^ 0 3 . 6 ± d Z • Low Collector Saturation Voltage • • High Speed Switching Time : tstg = 1 .0 //s (Typ.)


    OCR Scan     		2SA1012 2SC2562. 200x200x2m 100X2mm PDF

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 PDF