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    2SC2922 SAFE OPERATING AREA Search Results

    2SC2922 SAFE OPERATING AREA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    CS-SASDDP8282-000.5 Amphenol Cables on Demand Amphenol CS-SASDDP8282-000.5 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 0.5m Datasheet
    CS-SASDDP8282-001 Amphenol Cables on Demand Amphenol CS-SASDDP8282-001 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 1m Datasheet
    HA7-5137A-5 Rochester Electronics LLC HA7-5137 - Operational Amplifier Visit Rochester Electronics LLC Buy
    HA7-5221-5 Rochester Electronics LLC HA7-5221 - Operational Amplifier Visit Rochester Electronics LLC Buy

    2SC2922 SAFE OPERATING AREA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor 2SC2922

    Abstract: 2SC2922 150W TRANSISTOR AUDIO AMPLIFIER power amplifier 2sc2922 2SA1216
    Text: Æ & m o s p e c HIGH-POWER NPN SILICON POWER TRANSISTORS .designed for use in general-purpose amplifier and switching application. FEATURES: * Recommend for 150W High Fidelity Audio Frequency Amplifier Output stage * Complementary to 2SA1216 17 AMPERE POWER


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    2SA1216 2SC2922 150oC 600mA 400mA 300mA VCE-12 transistor 2SC2922 150W TRANSISTOR AUDIO AMPLIFIER power amplifier 2sc2922 2SA1216 PDF

    2SC2922

    Abstract: transistor 2sc2922 2SA1216 2sc2922 safe operating area
    Text: 2SC2922 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1216 Symbol ICBO Conditions 2SC2922 Unit VCB=180V 100max µA VEB=5V 100max µA IC=25mA 180min V 24.4±0.2 VCEO 180 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8V IB 5 A VCE(sat) IC=8A, IB=0.8A


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    2SC2922 2SA1216) MT-200 100max 180min 50typ 250typ 2SC2922 transistor 2sc2922 2SA1216 2sc2922 safe operating area PDF

    2SA1216

    Abstract: 2sc2922 safe operating area transistor 2SA1216 2SC2922 2sa1216 transistor general purpose sanken power transistor 2SA1216
    Text: 2SA1216 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC2922 2SA1216 Unit VCBO VCB=–180V –100max µA VEB=–5V –100max µA IC=–25mA –180min V 24.4±0.2 VCEO –180 V IEBO VEBO –5 V V(BR)CEO IC –17 A hFE VCE=–4V, IC=–8A 30min∗


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    2SA1216 2SC2922) MT-200 100max 180min 30min 40typ 2SA1216 2sc2922 safe operating area transistor 2SA1216 2SC2922 2sa1216 transistor general purpose sanken power transistor 2SA1216 PDF

    d2494

    Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
    Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


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    n6to4467 2SD211to214 2SC4468 2SC1828 2SC3832 2SA768to769 2SA1262 2SA770to771 2SA1725 2SA957to958 d2494 c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493 PDF