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    2SC2952 Price and Stock

    NEC Electronics Group 2SC2952

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    2SC2952 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2952 Advanced Semiconductor Transistor Original PDF
    2SC2952 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC2952 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2952 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC2952 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2952 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2952 NEC NPN Medium Power Microwave Transistor Scan PDF

    2SC2952 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    high frequency transistor

    Abstract: 2SC2952 2sc2592 S21E NPN silicon high frequency transistor
    Text: 2SC2952 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. MAXIMUM RATINGS IC 250 mA VCE 30 V PDISS 3.5 W @ TC = 25 C TJ -65 to +200 C


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    PDF 2SC2952 2SC2592 high frequency transistor 2SC2952 S21E NPN silicon high frequency transistor

    2SC2952

    Abstract: high frequency transistor S21E
    Text: 2SC2952 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-33 DESCRIPTION: The 2SC2952 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. MAXIMUM RATINGS IC 250 mA VCE 30 V PDISS 3.5 W @ TC = 25 OC TJ -65 to +200 OC


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    PDF 2SC2952 2SC2952 S21E2 high frequency transistor S21E

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    MSP90

    Abstract: 2SC2224A BF617 BF393W 2sc2224 ST2260
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 30 35 40 BF393W2 2SC1505 2SC1506 2SC1506 2SC1507 2SC1507 2SC1507 2SC2621 2SC2653 ~:;~~t:i88 2SC2688 2SC2802 2SC2802 2SC4075 2S01112 KSC1507 KSC1520A 2SC3209M 2SC3554 ~~t;~~9L 45 50 2SC3209K 2SC3183


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    PDF 2N6713 2SC1905 BF617 MPS6733 MJE3439 MSP90 2SC2224A BF393W 2sc2224 ST2260

    2SC2978

    Abstract: 2SC2936 2SC2950 2SA1227 2SC2954 2SC2918 2SC2932 2SC2933 2SC2936H 2SC2941
    Text: - 140 - Ta=25?C 1*EP(àTc=25‘1C M 2SC2932 2SC2933 2SC2936 2SC2936H 2SC2941 2SC2944 2SC2946 2SC2946(1) 2SC2949 2SC2950 2SC2951 2SC2952 2SC2953 2SC2954 2SC2958 2SC2959 2SC296Ö 2SC2964 2SC2965 2SC2975 2SC2976 2SC2977 2SC2978 2SC2979 2SC2981 2SC2982 2SC2983


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    PDF 2SC2932 2SC2933 2SC2936 2SC2936H 2SC2941 2SC2944 2SC2946 2SC2978 O-220ABB 2SC2978 2SC2950 2SA1227 2SC2954 2SC2918 2SC2932 2SC2933

    2sc2460b

    Abstract: 2SC1957 2SC2320 25C945 2SC945 25c1815 2SC2313 2SC2560 2SC2499 2SC1815
    Text: - m s T y p e No. € tt M anuf. i f v ît y i f y *r y 2 SC 2307 y - y 'r y 2SC 2308— 2SC 2309 -*- ED CD l=h 14 2SC 2305 2SC 2306«. 2SC 2310 • 2SC 2311 'Mitrii 2SC 2313 ' « H* •tf- 2SC 2314 2SC 2 3 1 5 ^ ' ÎL = * SANYO 2SC 2SC 2322 ŸÀ T MATSUSHITA


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    PDF 2SC3040 2SD641 2SC2819 2SC3042 2SC2751 2SC2740 2SC3331 2SC1815 2SC945 2SC3311A 2sc2460b 2SC1957 2SC2320 25C945 2SC945 25c1815 2SC2313 2SC2560 2SC2499

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE24600 NE24615 FEATURES DESCRIPTION • LOW IM DISTORTION CHARACTERISTICS AT HIGH OUTPUT LEVELS: NE24615 IM2 = -56 dBc, IM3 = -64 dBc NE24620 IM2= -63 dBc, IM3 = -72 dBc @ Vo = 120 dBnV/75 a The NE246 is an NPN transistor designed for broadband


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    PDF NE24615 NE24620 dBnV/75 NE24600 NE24615 NE246

    2sc2952

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE24600 NE24615 FEATURES DESCRIPTION • LOW IM DISTORTION CHARACTERISTICS AT HIGH OUTPUT LEVELS: NE24615 IM2 = -56 dBc, IM3 = -64 dBc NE24620 IM2= -63 dBc, IM3 = -72 dBc @ V o = 120 dB|iV/75 i l The NE246 is an NPN transistor designed for broadband


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    PDF NE24615 NE24620 iV/75 NE24600 NE24615 NE246 lS22l2, 4275c! 2sc2952

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    NE24600

    Abstract: NE24620 2SC2952 2SC2953 NE24615
    Text: SEC N E C / CALIFORNIA SbE D Li4274m 00G237S Tbl « N E C C " 1 7 3 5 -0 5 NE24600 NE24615 NE24620 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • E X C E L L E N T IM DISTO RTIO N C H A R A C T E R IS T IC S A T HIG H O U T P U T LEV E LS :


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    PDF tj4S74m 00G237S NE24600 NE24615 NE24620 NE24620 NE246 preve35 2SC2952 2SC2953

    2sb504

    Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
    Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St


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    PDF S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V

    2SC1885

    Abstract: 2SC2227 2SC22388 2SC2229 2SD668A 2SC2200 22-28V 2SC3298 2SC2204 2SD1476
    Text: - m % T yp e No. 2 SC 2223 2SC 2224 -, 2SC 2224A 2 SC 2227 2SC 2228 « , 2SC 2228A 2SC 2228Y 2SC 2229 ^ 2SC 2230 2SC 2230A 2SC 2231 2SC 2 2 3 M 2SC 2233 2SC 2234 2SC 2235 2SC 2236 2SC 2237 2SC 2238 — 2SC 2238A 2SC 22388 2SC 2239 2SC 2240 . 2SC 2241 2SC 2242


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    PDF 2SC3142 2SC2462 2SC3082K 2SC3416 2SC2376 2SC2952 2SC3467 2SC2229 2SC1921 2SC1885 2SC2227 2SC22388 2SC2229 2SD668A 2SC2200 22-28V 2SC3298 2SC2204 2SD1476

    NEC 2561

    Abstract: NEC 2581 nec 2565 2565 nec 2SC2564 2SC2320 NEC 2562 2581 NEC 2561 nec 2SC237
    Text: - 3 . n SANYO m ±L H IT A C H I □ — h. tt 2SC 2552 ^ 3fC S 2SC3038 2SC2333 ¿5b¿Oi¿ 2SC2738 2SC3968 2SC 2 553 / & 2SC3039 2SC2335 2SC2613 2SC2739 2SC4205 2SC2749 2SC3365 2SC2841 € TO SH IBA 2SC 2 5 5 5 " - ' NEC 2SC 2556-.- tó T 2SA505 2SC2690 2SC 2557


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    PDF 2SC3038 2SC2333 2SC2738 2SC3968 2SC3039 2SC2335 2SC2613 2SC2739 2SC4205 2SC2749 NEC 2561 NEC 2581 nec 2565 2565 nec 2SC2564 2SC2320 NEC 2562 2581 NEC 2561 nec 2SC237

    npn UHF transistor to-33

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE24600 NE24615 FEATURES DESCRIPTION • LOW IM DISTORTION CHARACTERISTICS AT HIGH OUTPUT LEVELS: NE24615 IM2 » -56 dBc, IM3 = -64 dBc KE24620 IM2 - -63 dBc, IMS » -72 dBc @ Vo - 120 dB i v/75 Q The NE246 is an NPN transistor designed lor broadband


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    PDF NE24615 KE24620 NE24600 NE24615 NE246 npn UHF transistor to-33