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    2SC36 Search Results

    2SC36 Result Highlights (5)

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    2SC3631-Z-E1-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
    2SC3617-T1-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SC3624A-T2B-A Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SC3632-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-3, / Visit Renesas Electronics Corporation
    2SC3631(0)-Z-E1-AY Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
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    2SC36 Price and Stock

    onsemi 2SC3646T-TD-E

    TRANS NPN 100V 1A PCP
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    TRANS NPN 100V 1A PCP
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    TRANS NPN 100V 2A PCP
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    TRANS NPN 160V 0.7A PCP
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    2SC36 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC36 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC36 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC36 Unknown Cross Reference Datasheet Scan PDF
    2SC36 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC36 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC36 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC36 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC36 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC36 Unknown Vintage Transistor Datasheets Scan PDF
    2SC36 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC360 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC360 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC360 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC360 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC360 Unknown Cross Reference Datasheet Scan PDF
    2SC360 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC360 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC360 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC360 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC360 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    ...

    2SC36 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd diode ua

    Abstract: transistor smd marking 2SC3648
    Text: Transistors SMD Type High-Voltage Switching Applications 2SC3648 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


    Original
    PDF 2SC3648 250mA smd diode ua transistor smd marking 2SC3648

    marking mh

    Abstract: 2SC3606
    Text: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC3606 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF = 1.1dB, |S21e|2 = 11dB f = 1 GHz 1 0.55 Low noise figure, high gain. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1


    Original
    PDF 2SC3606 OT-23 marking mh 2SC3606

    2SC3686

    Abstract: No abstract text available
    Text: Product Specification www.jmnic.com 2SC3686 Silicon NPN Power Transistors ESCRIPTION ・High breakdown voltage ・High reliability adoption of HVP process . ・Fast speed ・Adoption of MBIT process. ・With TO-3PN package APPLICATIONS ・Ultrahigh-definition color display horizontal


    Original
    PDF 2SC3686 100mA; 2SC3686

    2SC3678

    Abstract: No abstract text available
    Text: Product Specification www.jmnic.com 2SC3678 Silicon NPN Power Transistors ESCRIPTION ・High Voltage Switching ・With TO-3PN package APPLICATIONS ・ Switching Regulator ・ General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


    Original
    PDF 2SC3678 2SC3678

    2SC3688

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SC3688 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage ・High speed APPLICATIONS ・Ultrahigh-definition color display horizontal deflection output applications PINNING PIN DESCRIPTION


    Original
    PDF 2SC3688 2SC3688

    2SC3694

    Abstract: 2SC369 TO-220FA
    Text: Power Transistors www.jmnic.com 2SC3694 Silicon NPN Transistors Features BCE ﹒With TO-220Fa package ﹒High speed ,power switching applications Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage


    Original
    PDF 2SC3694 O-220Fa O-220Fa 2SC3694 2SC369 TO-220FA

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN1938A NPN Triple Diffused Planar Silicon Transistor 2SC3686 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Applications Package Dimensions • Ultrahigh-definition color display horizontal deflection output. unit:mm


    Original
    PDF EN1938A 2SC3686 2SC3686] 100ns)

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN1637C NPN Triple Diffused Planar Silicon Transistor 2SC3638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage.


    Original
    PDF EN1637C 2SC3638 2SC3638]

    Untitled

    Abstract: No abstract text available
    Text: 2SA1418 / 2SC3648 Ordering number : EN1788B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1418 / 2SC3648 High-Voltage Switching, Preriver Applications Applications • Color TV audio output, inverter. Features • • •


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    PDF 2SA1418 2SC3648 EN1788B 2SA1418

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTORS 2SC3622, 3622A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA


    Original
    PDF 2SC3622, 2SC3622) 2SC3622A) 2SC3622 2SC3622A

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN1614C NPN Triple Diffused Planar Silicon Transistor 2SC3636 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage.


    Original
    PDF EN1614C 2SC3636 2SC3636]

    Untitled

    Abstract: No abstract text available
    Text: 2SA1416 / 2SC3646 Ordering number : EN2005B SANYO Semiconductors DATA SHEET 2SA1416 / 2SC3646 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.


    Original
    PDF 2SA1416 2SC3646 EN2005B 2SA1416

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3671 ST0R0B0 FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. Unit in ram . High DC Current Gain and Excellent hFE Linearity : hFE(l)=140~450 (VCE=2V, : h F E(2)=70(Min.) Ic =0.5A) (VC E=2V, IC=4A) . Low Saturation Voltage


    OCR Scan
    PDF 2SC3671 Q55-Q0S 10tnA,

    Untitled

    Abstract: No abstract text available
    Text: 2SC3607 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. 3.6 MAX . • Low Noise Figure, High Gain N F = l.ld B , |S2leP = 9-5dB f= 1.7 MAX. jg L MAXIMUM RATINGS (Ta = 25°C CHARACTERISTIC Collector-Base Voltage


    OCR Scan
    PDF 2SC3607 -j250

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3657 INDUSTRIAL APPLICATIONS U n i t in mm S W I T C H I N G R E G U L A T O R A N D HI G H V O L T A G E SWITCHING APPLICATIONS. 15.9M A X. HIGH SPEED DC-DC CONVERTER APPLICATION. ' FE ATURES: 7 . Excellent Switching Times


    OCR Scan
    PDF 2SC3657

    ic power 22E

    Abstract: power 22E IC 12E MARKING
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3607 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm FEATURES : 1.6MAX 4.6 MAX. . Low Noise Figure, High Gain. 0.4±a05 1.7MAX. . N F = 1 .ldB, IS21e l2=9.5dB f=lGHz MAXI M U M RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC


    OCR Scan
    PDF 2SC3607 IS21e CL4-a05 ic power 22E power 22E IC 12E MARKING

    2SC3609

    Abstract: ic power 22E 12E MARKING power 22E power 22E IC power Ic 22e
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3609 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. + Q .2 2.9- a 3 FEATURES: • Low Noise Figure, High Gain. • N F=1.ldB, IS2 1 e |2=13dB f=lGHz +a25 MAXIMUM RATINGS 1 .5 0 — 0 .1 5 (Ta=25°C) h o CHARACTERISTIC


    OCR Scan
    PDF 2SC3609 1S21el2 500MHz 2SC3609 ic power 22E 12E MARKING power 22E power 22E IC power Ic 22e

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3606 U nit in mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = l.ldB , |S2lel2= lld B f=lGHz M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan
    PDF 2SC3606 SC-59

    2SA1482

    Abstract: No abstract text available
    Text: O rd e rin g n um b e r : EN 1 7 8 8 A N° 1788A II 2SA1418/2SC3648 P N P/N PN E p itax ial P la n a r Silicon T ran sisto rs S A t Y O High-Voltage Switching, _Predriver Applications A pplications . Color TV audio output, converter, in v e rter


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    PDF 2SA1418/2SC3648 2SA1418 1418/2SC3648 2SA1482

    2SC3645

    Abstract: No abstract text available
    Text: Type No. 2SA 1257 2S A 1415 2 S A 1418 2 S A 1419 2S A 1552 2 S A 1682 2S A 1700 2S A 1740 2S A 1772 2 S A 1773 2SC3143 2SC3645 2SC 3648 2SC 3649 2SC4003 2SC4027 2SC4412 2SC 4548 2SC4597 2SC 4598 2SC4599 2SC 4600 2SC4601 2SC 4602 2SC 4615 2SC 4616 FX510 Page


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    PDF 2SA1257 2SA1415 2SA1418 2SA1419 2SA1552 2SA1682 2SA1700 2SA1740 2SA1772 2SA1773 2SC3645

    Untitled

    Abstract: No abstract text available
    Text: ^O rd e rin g number . EN 2 0 0 5 A 2SA1416/2SC3646 NO.2005A PN P/N PN Epitaxial Planar Silicon Transistors SAiYO i High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity. . Fast switching time.


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    PDF 2SA1416/2SC3646 2SA1416 250miii 2I2SA1416/2SC3646

    transistor NEC K 946

    Abstract: C947 BU x460 2SC3618
    Text: — S7 • $ /— h '> > ; = ! > t . 9 h S ilic o n T ra n s is to r 2SC3618 N 2SC 3618Ü , P N X t 0 ^ + 7 '> ; i / ^ ' > y ~7" '] "/ Y l C m A ' B ' < - v ' r - y ^ M m ^ W 7 > y X ? T", =1 > h h = 7 7 . 9 ^ - {i : mmj K 7 -i 1.5 + 0.1 M # 3 _ O h p E i ' ^ i 9 ÿ i3 ' C i s i l' ' ' o


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    PDF 2SC3618 2SC3618IÃ OT-89) PWS10 Cycled50 X108-01 transistor NEC K 946 C947 BU x460

    2SC361

    Abstract: 2SC3617
    Text: — S • S /— h ' > > ; = ] > S ilic o h = 7 > n T r a 7 n , s i s t o 9 r 2SC3617 2SC 3617l i '7" 'i ' > 9' X 9 T ' # i S K 7 -1" # îiffihpE 1- y K IC ffl/J "/ ^ ÏÏ^ H l ìp -iì • m m f t S T 't o i l l $ o ï Ô ~ Z Ï i w j '- '^ o O h p E ^ j^


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    PDF 2SC3617 PWS10 CycleS50 OT-89) 01rPIÂ 00oco 2SC361

    2SC3644

    Abstract: 777T
    Text: O rd e rin g n u m b e r: EN 1628C N0.1628C 2SC3644 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition Display Horizontal Deflection Output Applications i oi i— Features • High reliability Adoption of HVP process . • High speed. • High breakdown voltage.


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    PDF 1628C l628C 2SC3644 777T