2SA1643
Abstract: 2SC4327 TO-220f Package
Text: JMnic Product Specification 2SA1643 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SC4327 ・Low collector saturation voltage APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector
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2SA1643
O-220F
2SC4327
O-220F)
-25mA
2SA1643
2SC4327
TO-220f Package
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2SA1643
Abstract: 2SC4327
Text: SavantIC Semiconductor Product Specification 2SA1643 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SC4327 ·Low collector saturation voltage APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1
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2SA1643
O-220F
2SC4327
O-220F)
-25mA
2SA1643
2SC4327
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2SA1643
Abstract: 2sc4327 transistor pnp VCEO 12V Ic 1A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1643 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -35V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max)@ (IC= -5A, IB= -0.3A) ·Complement to Type 2SC4327
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2SA1643
2SC4327
-25mA;
2SA1643
2sc4327
transistor pnp VCEO 12V Ic 1A
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2SC4325
Abstract: toshiba ta 1222
Text: 2SC4325 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4325 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating
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2SC4325
2SC4325
toshiba ta 1222
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz
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2SC4322
IS21ei2
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NJ 25 50 N
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR T Y P E 2SC4322 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm +0.5 2.5-0.3 . Low Noise Figure, High Gain. . NF=1.8dB, I S21e |2=7.5dB f=2GHz M A X I M U M RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage
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2SC4322
UHJ1U1O\00?
2SC4315
NJ 25 50 N
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4321 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 1 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm 2.1 • Low Noise Figure, High Gain • N F = l.ld B , |S2lel2= 13dB f=lG H z ± 0.1 1 . 2 5 Í 0.1 M A X IM U M RATINGS (Ta = 25°C)
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2SC4321
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC4325 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 5 VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 • Low Noise Figure, High Gain. • N F=1.8dB , |S2 lel2= 7-5dB f=2GHz ± 0.1 1 . 2 5 Í 0.1 MAXIMUM RATINGS (Ta = 25°C)
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2SC4325
Na200
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820 572 711
Abstract: lc 7130 2SC4321
Text: 2SC4321 TOSHIBA 2SC4321 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain N F = l.ldB , |S2iel2 = 13dB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC4321
SC-70
820 572 711
lc 7130
2SC4321
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2SC4326LK
Abstract: J100 T146 T147
Text: 2SC4326LK h "7 > v J* £ /Transistors 2 S C 4 3 2 6 L K Epitaxial Planar NPN Silicon Transistor RF 7. -f y Switch Usage • W ërJ’JÎBI/Dim ensions Unit : mm 2) 3) R F i V 2 P - i > ¥ « R F ^ - f y ^ f f l t 0.B±0.1 L T £ S „ a T«m • Features
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2SC4326LK
0-15-frÂ
SC-59
0D11Q31
2SC4326LK
J100
T146
T147
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821e
Abstract: 2SC4322
Text: TOSHIBA 2SC4322 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4322 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.5 • Low Noise Figure, High Gain. • N F =1.8d B , |S2 iel2 = 7.5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC4322
SC-59
821e
2SC4322
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821e
Abstract: 2SC4325 cnh 949
Text: TOSHIBA 2SC4325 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4325 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F =1.8d B , |S2 iel2 = 7.5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC4325
SC-70
-j250
821e
2SC4325
cnh 949
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR T Y P E 2SC4325 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. U n it in mm 2.1 ± 0 .1 . Low Noise Figure, High Gain. 1.25 ±0.1 . NF=1.8dB, I S21e|2=7.5dB f=2GHz c + i 3E2 -EE} MAXI M U M RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC
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2SC4325
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC4322 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4322 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • U nit in mm + 0 .5 2 .5 -0 .3 Low Noise Figure, High Gain. + 0 .2 5 1 .5 -0 .1 5 . N F = 1.8dB, |S21e|2 = 7-5dB f=2G H z HO
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2SC4322
SC-59
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ic 4508
Abstract: 2SC4325
Text: TOSHIBA 2SC4325 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4325 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm 2.1 ± 0.1 • Low Noise Figure, High Gain. . N F = 1.8dB, |S2le|2= ?.5dB f = 2GHz 1.25 ± 0.1 oo + 1 3E- MAXIMUM RATINGS (Ta = 25°C)
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2SC4325
SC-70
ic 4508
2SC4325
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Untitled
Abstract: No abstract text available
Text: h 7 > ' / X $ / I ransistors 2SC4326LK 2SC 4326LK V b 7 > * $ f V Epitaxial Planar NPN Silicon Transistor RF y Switch Usage 1i+îfi \t"üEl/Dimensions Unit : mm 1) 2 ) § * * s'/ J v $ l 'o 3) R F i t R F ^-T ^ffi L T iS o • Features 1) Low output ON resistance
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2SC4326LK
4326LK
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toshiba 1452
Abstract: 2SC4320 toshiba 2-3J1C
Text: TO SH IBA 2SC4320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4320 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.2 2.9-0.3 -fr -3 • Low Noise Figure, High Gain • N F = l.ld B , |S2ie l2= 15dB f=lGHz MAXIMUM RATINGS (Ta = 25°C)
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2SC4320
toshiba 1452
2SC4320
toshiba 2-3J1C
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC4322 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 2 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F=1.8dB , |S2lel2= 7-5dB f=2GHz Unit in mm M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC4322
SC-59
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC4320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 0 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.2 2.9 - 0.3 11 • Low Noise Figure, High Gain • N F = l.ld B , |S2lel2= 15dB f=lG H z 'S M A X IM U M RATINGS (Ta = 25°C)
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2SC4320
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE W ÊF mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . NF = 1.8dB, |S ie l = 9.5dB f=2GHz U nit in mm 2 2 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC4324
--j50
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4322 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE mm w êf Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . + 0.5 2.5 -0 .3 + 0.25 Low Noise Figure, High Gain. NF = 1.8dB, |S2iel2—7.5dB f —2GHz ^1-5 —0 .1 5 1 «o o
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2SC4322
--j50
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TRANSISTOR C 5857
Abstract: transistor C5D 2SC4324
Text: TOSHIBA 2SC4324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4324 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm +0.2 2.9- a 3 • Low Noise Figure, High Gain. . N F = 1.8dB, |S2le |2= 9-5dB f = 2GHz II -€ 3 M A X IM U M RATINGS (Ta = 25°C)
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2SC4324
TRANSISTOR C 5857
transistor C5D
2SC4324
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820 572 711
Abstract: 2SC4321
Text: 2SC4321 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4321 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF = l.ldB, |S2le|2= 13dB f = 1GHz 2.1 ±0.1 1.25 ±0.1 oo + 1 3E- MAXIMUM RATINGS (Ta = 25°C)
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2SC4321
SC-70
-j250
820 572 711
2SC4321
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC4324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 4 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.2 2.9 - 0.3 11 • Low Noise Figure, High Gain. • N F=1.8dB , |S2lel2= 9-5dB f=2GHz . " S M A X IM U M RATINGS (Ta = 25°C)
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2SC4324
EMITTE098
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