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Isahaya Electronics Corporation 2SC4357-T111-1E
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2SC435 Datasheets (68)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC435	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC435	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2SC435	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SC435	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SC435	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC435	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SC435	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC435	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC435	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SC435	Unknown	Transistor Replacements	Scan	PDF
2SC435	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SC435	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC435	Shindengen Electric	POWER TRANSISTOR	Scan	PDF
2SC435	Shindengen Electric	Semi Conductor Catalog	Scan	PDF

2SC435	Shindengen Electric	Power Transistors	Scan	PDF
2SC4350	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SC4350	NEC	Semiconductor Selection Guide	Original	PDF
2SC4350	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC4350	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC4350	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF

2SC435 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SC4350 Abstract: NPN POWER DARLINGTON TRANSISTORS Text: Inchange Semiconductor Product Specification 2SC4350 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON APPLICATIONS ・For high speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to	Original	2SC4350 O-220 O-220) 2SC4350 NPN POWER DARLINGTON TRANSISTORS	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4359 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 21.0±0.5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)	Original	2002/95/EC) 2SC4359	PDF
2SC4350 Abstract: NPN POWER DARLINGTON TRANSISTORS Text: JMnic Product Specification 2SC4350 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON APPLICATIONS ・For high speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base	Original	2SC4350 O-220 O-220) 2SC4350 NPN POWER DARLINGTON TRANSISTORS	PDF
2SC4350 Abstract: No abstract text available Text: SavantIC Semiconductor Product Specification 2SC4350 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For high speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to	Original	2SC4350 O-220 O-220) 2SC4350	PDF
2SC4351 Abstract: No abstract text available Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4351 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SC4351 is a high-speed Darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for	Original	2SC4351 2SC4351	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4359 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 21.0±0.5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)	Original	2002/95/EC) 2SC4359	PDF
SC-92 Abstract: 2SC4359 Text: Power Transistors 2SC4359 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 0.7 15.0±0.3 21.0±0.5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 900 V Collector-emitter voltage (E-B short)	Original	2SC4359 SC-92 2SC4359	PDF
2SC4359 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4359 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short)	Original	2002/95/EC) 2SC4359 SC-92 2SC4359	PDF
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE	PDF
D1559 Abstract: 2SC4351 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
2SC4356 Abstract: transistor c 4106 Text: M ITSUBISHI SEM ICONDUCTO R SM A LL-SIG N A L TRANSISTO R 2SC4356 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION M itsubishi 2 S C 4 3 5 6 is a silicon N P N epitaxial type transistor d e sign e d relay OUTLINE DRAWING u ,mm	OCR Scan	2SC4356 2SC4356 transistor c 4106	PDF
2SC4357 Abstract: VCEO-60V oc sc62 Text: SMALL-SIGNAL TRANSISTOR 2SC4357 FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION , 2SC4357 is a silicon NPN epitaxial type transistor designed for high OUTLINE DRAWING Uni,mm collector current, for high voltage. FEATURE • H ig h voltage	OCR Scan	2SC4357 2SC4357 500mW SC-62 VCEO-60V oc sc62	PDF
A03M Abstract: 2SC4354 Text: 2SC4354 h 7 > V ^ i ; / T ransistors 2SC 4354 7° U NPN '> U =l > h 7 > V * 2 Triple Diffused Planar NPN Silicon Transistor " j ^ V ^ f f l/H ig h Voltage Switching 1 a S E f ^ 5 « V c EO= 4 0 0V 2 ) V c e sat) V c e (s a t)= 0 .3 V (Typ.) (Ic /Ib = 1 A /0 .2 A )	OCR Scan	2SC4354 A03M 2SC4354	PDF
transistor marking 2A H Abstract: mitsubishi vcb 2sc4357 mitsubishi symbol marking La 4108 Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4357 FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4357 is a silicon NPN epitaxial type transistor designed for high collector current, for high voltage.	OCR Scan	2SC4357 2SC4357 500mW transistor marking 2A H mitsubishi vcb mitsubishi symbol marking La 4108	PDF

D1559 Abstract: 2SC4351 m027 TD-7509 Text: — y 3 1 • y — b # - ' J > b > n '7 Darlington Power Transistor 2SC4351 N P N lfc f^ + v r ^ y 2 S C 4 3 5 1 á , ït5 M ;M 7 W " - U > OA • F A ^ ^ í7 /^ X Í- ^ ^ 7 " 7 U =i> h 7 > v ^ i ' h > ^ 0,7 - F x ^ X ^ - C t o ÿ k X i - ^ W P W M ( # - U > h >JtíJí;	OCR Scan	2SC4351 2SC4351 D15594JJ2V0DS00 TD-7509) D1559 m027 TD-7509	PDF
2SC4358 Abstract: 44MAX Text: Power Transistors 2SC4358 2SC4358 Preliminary Silicon N P N Epitaxial Planar Type Package Dim ensions V id eo Output U nit • mm • Feature 4.4max. 10.2m ax. 5.7m ax. • H igh tra n sitio n fre q u e n c y (ft) 2.9max 0 3 .1 + 0.1 Ve G.5maxl.o m a x .	OCR Scan	2SC4358 O-220 50raA 800MHz 2SC4358 44MAX	PDF
2SB1632 Abstract: 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3403 2SC3527 2SC3528 Text: Transistors Selection Guide by Applications and Functions • Switching Power Transistors Appli V cbo cation (V) VcEO (V ) Io (A) VcE (sat) (V) lc Ib tf (/JS) (A) (mA) 150/200/ 80 5 <1.6 5 IW 1 250 330 200 7 < 1 5 500 0.75 500 400 2 1 <1 200 1 Package (No.)	OCR Scan	r0-220 -220F O-220E O-220D 2sd1274Ã 2sd1680* 2sc4986 2SC3403 2SC3825 2SC2841 2SB1632 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3527 2SC3528	PDF
2SD2334 Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062 Text: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187	OCR Scan	2SD2174 2SD2175 2SD2176 2SD2177 2SD2185 2SD2186 2SD2187 2SD2188 2SD2189 2SD2190 2SD2334 2sc4814 2SD2076 2216y 2SD1546 2SD1930 2SD1755 2sc2562 2SC4062	PDF
SC3150 Abstract: c2979 3171 s 2sc3153 2sc4044s 2SD1390 2SC3174 2sc3180n 2SC3344 2sd1335 Text: - m % tt Type No. £ Manuf. 2SC 3151 =- ft ft 2SC 3152 . s. n 2SC 3 1 5 3 / 3 ft 2 SC 3150 n SANYO TOSHIBA 2SC2792 2SC2792 2SC 3154 X = ft 2SC3151 2SC2790 H n 2SC3152 2SC2790 2SC 3156 ^ = ft 2SC3153 2SC2791 a n B « 2SC3039 2SC3236 2SC 3159 CD 2SC3344 2SC 3160	OCR Scan	2SC3148 2SC2979 2SC2792 2SC4359 2SC3322 2SC3981 2SC3151 2SC2790 SC3150 c2979 3171 s 2sc3153 2sc4044s 2SD1390 2SC3174 2sc3180n 2SC3344 2sd1335	PDF
2SC4542 Abstract: 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555 Text: - 192 - SU £ Type No. tt £ Manuf. □— A 2SC 4506 H # SANYO M £ TOSHIBA B a NEC 2SC3789 2SC2551 2SC3209 2SC 4507 ✓ 2SC4106 2SC2553 2SC2518 B HITACHI Ai Ä dr ii FUJITSU fâ T MATSUSHITA 2SC 4508 * 2SC4107 2SC3626 2SC4423 2SC3306 2SC 4510 2SC4424 2SD1313	OCR Scan	2SC3789 2SC2551 2SC3209 2SC1573A 2SC4106 2SC2553 2SC2518 2SC4107 2SC3626 2SC4423 2SC4542 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555	PDF
X9116WM8I-2.7T1 Abstract: No abstract text available Text: Transistors Selection Guide by Applications and Functions •Switching Power Transistors Appli V cbo VcEO Io VcE (sat) cation (V) (V) (A) (V) 150/200/ 250 80 5 <1.6 Package (No.) lc tf (/JS) Ib MT3 (D43) (A) (mA) 5 IW MT4 (D46) TO TO-220E TO-220D N Type	OCR Scan	-220F O-220E O-220D Z74/MB 2SC3210 2SC3171 2SC3527 2SC3285 2SC3506 2SC5156 X9116WM8I-2.7T1	PDF
2SB1335A Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856 Text: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)	OCR Scan	3SK212 O-220, O-220FP, 2SD1562 2SB1085 2SD1763 2SB1186 2SD2033 2SB1353 2SD1562A 2SB1335A 2SD2037 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856	PDF
RTIP144C Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.	OCR Scan	2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C	PDF
SB1335A Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041 Text: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.	OCR Scan	O-220 T0-220FP O-220FN O-220FP T0-220 O-220FN SB1335A 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041	PDF

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2SC435 Search Results

2SC435 Price and Stock

Isahaya Electronics Corporation 2SC4357-T111-1E

2SC435 Datasheets (68)

2SC435 Datasheets Context Search

2SC4350

Untitled

2SC4350

2SC4350

2SC4351

Untitled

SC-92

2SC4359

2sc5929

D1559

2SC4356

2SC4357

A03M

transistor marking 2A H

D1559

2SC4358

2SB1632

2SD2334

SC3150

2SC4542

X9116WM8I-2.7T1

2SB1335A

RTIP144C

SB1335A