c358
Abstract: 2SC4849 2SC5147 C342
Text: Transistors 2SC4849 2SC5147 94L-712-C342 (96-736-C358) 302
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2SC4849
2SC5147
94L-712-C342)
96-736-C358)
c358
2SC4849
2SC5147
C342
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Untitled
Abstract: No abstract text available
Text: 2SC4848D Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V) I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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2SC4848D
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2SC4849
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SC4849 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High switching speed ·Wide safe operating area APPLICATIONS ·For power supply PINNING PIN DESCRIPTION
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2SC4849
O-220Fa
O-220Fa)
VCC50V
2SC4849
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Untitled
Abstract: No abstract text available
Text: 2SC4846E Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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2SC4846E
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2SC4843
Abstract: No abstract text available
Text: 2SC4843 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4843 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 15.5dB f = 1 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating
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2SC4843
2SC4843
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2SC4841
Abstract: No abstract text available
Text: 2SC4841 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4841 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 8.5dB f = 2 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating
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2SC4841
2SC4841
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2SC4849
Abstract: No abstract text available
Text: h7 /'Transistors 2SC4849 2SC4849 1 1°$ * y 7 & 7V - 1M NPN v >J n > N7 > y 2 S Epitaxial Planar NPN Silicon Transistor X < y -?•> “i? b =£' a lx — £ /Switching Regulator • ^ j i / D i m e n s i o n s U n it: mm tf= 0 .1 8 (Typ.) ( lc = 5 A )
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2SC4849
2SC4849
100ms)
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TRANSISTOR 4841
Abstract: 2SC4841 Toshiba transistor a 802
Text: TO SH IBA 2SC4841 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4841 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F=1.8dB, |S2 ie l 2 = 8.5dB f=2GHz Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC4841
TRANSISTOR 4841
2SC4841
Toshiba transistor a 802
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TY P E 2SC4843 Unit in mm V H F -U H F BA N D LO W NOISE AMPLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. N F = l.ld B , |S2lel2=15.5dB f=lGHz 2 .1 ± 0.1 □ M A X IM U M RATINGS (Ta = 2 5°C) CHARACTERISTIC Collector-Base Voltage
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2SC4843
--20mA
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR J A J A - 2SC4843 V H F ~U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • U n it in mm 2.1 J:0.1 Low N oise F igure, H igh G ain. N F = l .l d B , |S 2 le l2 = 1 5 .5 d B f= lG H z
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2SC4843
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Untitled
Abstract: No abstract text available
Text: 2SC4849 2SC5147 Transistors High-voltage Switching Transistor Power Supply (120V, 7A) I I 2SC4849 •F e a tu re * 1 ) Low VcE(Mt). (Typ. 0.17V at Ic/Ib =5V0.5A) 2 ) Fast switching, ( t f : Typ. 0 .1 8 /is a t lc= 5 A ) 3 ) Wide SOA. (safe operating area)
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2SC4849
2SC5147
100ms)
220FP
0Dlb713
O-220FN
O-220FN
O220FP
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TRANSISTOR 4841
Abstract: 2sC4841 821e
Text: TOSHIBA 2SC4841 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4841 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F =1.8d B , |S2 ie l2 = 8.5dB f=2GHz Unit in mm MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC
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2SC4841
CHARACTE32
-j250
-jl50
TRANSISTOR 4841
2sC4841
821e
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2SC4843
Abstract: TRANSISTOR nf 841
Text: TOSHIBA 2SC4843 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4843 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm 2.1 ± 0.1 • Low Noise Figure, High Gain. . N F = l.ld B , |S2 iel2 = 15.5dB f = 1GHz 1. 2 5 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)
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2SC4843
2SC4843
TRANSISTOR nf 841
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ic 7496
Abstract: 2SC4840 2SC484
Text: TOSHIBA 2SC4840 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4840 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . N F = l.ld B , |S2 i e l 2 = 13dB f = 1GHz MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC
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2SC4840
ic 7496
2SC4840
2SC484
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2SC4842
Abstract: TA1410
Text: TOSHIBA 2SC4842 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 SC4842 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . N F = l.ld B , | S 2 i e l 2 = 14dB U n it in mm . 2.1±0.1 1.25±0.1 f = 1GHz III —r SYM BO L
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2SC4842
2SC4842
TA1410
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LCTE5
Abstract: No abstract text available
Text: 2SC4849 2SC5147 Transistors High-voltage Switching Transistor Power Supply (120V, 7A) 2SC4849 •F e a tu re s •A b s o lu te maximum ratings (T a = 2 5 ’C ) 1 ) Low VcE(sat). (Typ. 0.17V at Ic / I b — 5/0.5A) P a ra m e te r 2 ) Fast switching, (tf : Typ. 0.18>us at lc= 5 A )
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2SC4849
2SC5147
2SC4849
96-736-C358)
LCTE5
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC4844 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4844 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • U nit in mm 2 . 1.1 0 .1 Low Noise Figure, High Gain. 1.2 5 ± 0.1 . N F = 1.8d B , |S2 ie l2 = 9.5dB f=2G H z □ MAXIMUM RATINGS (Ta = 25°C)
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2SC4844
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4844 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4844 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = 1.8dB, |S2iel2= 9.5dB f=2GHz 2.1 ± 0.1 1.25 ± 0.1 n4 MAXIMUM RATINGS (Ta = 25°C)
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2SC4844
--J50
-j250
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4842
Abstract: 2SC4842
Text: TOSHIBA 2SC4842 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 SC4842 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm 2.1 ±0.1 • Low Noise Figure, High Gain. . NF = l.ld B , |S2iel2= 14dB f = 1GHz 1. 2 5 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)
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2SC4842
-j250
4842
2SC4842
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC4842 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4842 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . N F = l.ld B , |S U nit in mm 2 . 1.1 0 .1 1.2 5 ± 0.1 2 l e l 2 = 14dB f = 1GHz □ MAXIMUM RATINGS (Ta = 25°C)
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2SC4842
Volta00
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC4840 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4840 VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low N oise F igure, H igh Gain. • N F = l.ld B , |S2 le l2 = 13dB f= lG H z U n it in mm MAXIMUM RATINGS (Ta = 25°C) SYMBOL
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2SC4840
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Untitled
Abstract: No abstract text available
Text: 2SC4840 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm VH F-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF = l.ldB , |S2iel2= 13dB f=lGHz -EE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage
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2SC4840
--j50
--20mA
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3961 G.E
Abstract: No abstract text available
Text: TOSHIBA 2SC4841 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4841 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. 1.6 ± 0.2 Low Noise Figure, High Gain. 0.8 ±0.1 NF = 1.8dB, |S2i e|2= 8.5dB f=2GHz M A Y IM I IM R A T IM fiÇ ÍT a —
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2SC4841
3961 G.E
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2SC4844
Abstract: No abstract text available
Text: TOSHIBA 2SC4844 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4844 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm 2.1 ± 0.1 • Low Noise Figure, High Gain. . N F = 1.8dB, |S2 iel2 = 9.5dB f = 2GHz 1. 2 5 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)
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2SC4844
2SC4844
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