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    2SC5609 TRANSISTOR Search Results

    2SC5609 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    2SC5609 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SA2021 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609 Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 5˚ • High forward current transfer ratio hFE • SSS-Mini type package, allowing downsizing and thinning of the


    Original     		2SA2021 2SC5609 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SA2021 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609 Unit: mm 0.33+0.05 –0.02 0.10+0.05 –0.02 5˚ • High forward current transfer ratio hFE • SSS-Mini type package, allowing downsizing and thinning of the


    Original     		2SA2021 2SC5609 PDF

    2SC5609

    Abstract: 2sc5609 transistor transistor 2sc5609 2SA2021
    Text: Transistors 2SC5609 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021 Unit: mm 0.33+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.10+0.05 –0.02 0.80±0.05 1.20±0.05 Collector current Peak collector current Collector power dissipation


    Original     		2SC5609 2SA2021 2SC5609 2sc5609 transistor transistor 2sc5609 2SA2021 PDF

    2sc5609

    Abstract: 2sc5609 transistor 2SA2021
    Text: Transistors 2SA2021 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SC5609 0.10+0.05 –0.02 0.33+0.05 –0.02 0.15 min. 5˚ • Features 1.20±0.05 0.80±0.05 3 1 0.23+0.05 –0.02 2 0.15 min. • High foward current transfer ratio hFE


    Original     		2SA2021 2SC5609 2sc5609 2sc5609 transistor 2SA2021 PDF

    2sc5609 transistor

    Abstract: 2SC5609 transistor 2sc5609 2SA2021
    Text: Transistors 2SA2021 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SC5609 0.10+0.05 –0.02 0.33+0.05 –0.02 0.15 min. 5˚ • Features 1.20±0.05 0.80±0.05 3 1 0.23+0.05 –0.02 2 0.15 min. • High foward current transfer ratio hFE


    Original     		2SA2021 2SC5609 2sc5609 transistor 2SC5609 transistor 2sc5609 2SA2021 PDF

    2SC5609

    Abstract: 2sc5609 transistor transistor 2sc5609 2SA2021 SSSMini 3
    Text: Transistors 2SC5609 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SA2021 0.10+0.05 –0.02 0.33+0.05 –0.02 1 0.23+0.05 –0.02 0.15 min. 2 0.15 min. • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the


    Original     		2SC5609 2SA2021 2SC5609 2sc5609 transistor transistor 2sc5609 2SA2021 SSSMini 3 PDF

    2sc5609 transistor

    Abstract: 2SC5609 transistor 2sc5609 2SA20 2SA2021
    Text: Transistors 2SC5609 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SA2021 0.10+0.05 –0.02 0.33+0.05 –0.02 1 0.23+0.05 –0.02 0.15 min. 2 0.15 min. • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the


    Original     		2SC5609 2SA2021 2sc5609 transistor 2SC5609 transistor 2sc5609 2SA20 2SA2021 PDF

    2SC5609

    Abstract: 2sc5609 transistor transistor 2sc5609 2SA2021 2SC560
    Text: Transistors 2SA2021 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609 Unit: mm 0.33+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.10+0.05 –0.02 1 0.23+0.05 –0.02 0.15 min. 1.20±0.05 2 0.15 min. • High forward current transfer ratio hFE


    Original     		2SA2021 2SC5609 2SC5609 2sc5609 transistor transistor 2sc5609 2SA2021 2SC560 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC5609 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021 Unit: mm 0.33+0.05 –0.02 0.10+0.05 –0.02 5˚ M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE • SSS-Mini type package, allowing downsizing and thinning of the


    Original     		2SC5609 2SA2021 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SA2021 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609 Unit: mm 0.33+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.10+0.05 –0.02 1 2 0.15 min. d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll


    Original     		2SA2021 2SC5609 PDF

    transistor 2sc5609

    Abstract: 2sc5609 MAS3781E 2sc5609 transistor 2SD2621
    Text: New Subminiature Surface-Mount Package SSS Mini 3-Pin Package Series n Overview The Subminiature Surface-Mount Package Series with 1.2 mm x 0.8 mm x 0.52 mm in external size will contribute to the production of downsized, lightweight, and low-profile devices. In addition, the flat-lead structure of the


    Original     		MAS3132D MAS3132E MAS3781 MAS3795 MAS3781E MAS3795E MAS3784 transistor 2sc5609 2sc5609 2sc5609 transistor 2SD2621 PDF

    2SC5609

    Abstract: 2sc5609 transistor DA221 transistor 2sc5609 philips zener 2SA1774R 2SA1774S panasonic zener smd ZENER PANASONIC 2PC4617q
    Text: New Product Announcement February 2002 Introducing Second Generation Subminiature Schottky, Zener & Switching Diodes in SOT-523 3-pin SMD’s SOT-523 C TO P V IE W B B C E A G H K J Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D  


    Original     		OT-523 diD4448HTS 1SS362; DA221; MA3S133, MA3S137 MMBT2222AT MMBT3904T MMBT3906T 2SC5609 2sc5609 transistor DA221 transistor 2sc5609 philips zener 2SA1774R 2SA1774S panasonic zener smd ZENER PANASONIC 2PC4617q PDF

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 PDF