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    2SC5696 TRANSISTOR Search Results

    2SC5696 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SC5696 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2sc5696

    Abstract: transistor 2sc5696 2sc5696 transistor 2SC5696 equivalent TA-3261 IT025
    Text: Ordering number : ENN6663C 2SC5696 NPN Triple Diffused Planar Silicon Transistor 2SC5696 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).


    Original     		ENN6663C 2SC5696 2SC5696] 2sc5696 transistor 2sc5696 2sc5696 transistor 2SC5696 equivalent TA-3261 IT025 PDF

    2sc5696

    Abstract: 2SC5696 equivalent diode 1a, 1600V
    Text: Ordering number : ENN6663B 2SC5696 NPN Triple Diffused Planar Silicon Transistor 2SC5696 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).


    Original     		ENN6663B 2SC5696 2SC5696] 2sc5696 2SC5696 equivalent diode 1a, 1600V PDF

    2sc5696

    Abstract: 2SC5696 equivalent TA-3207 2sc5696 transistor using of damper in Horizontal Output Transistor TA-2994
    Text: Ordering number : ENN6663A 2SC5696 NPN Triple Diffused Planar Silicon Transistor 2SC5696 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).


    Original     		ENN6663A 2SC5696 2SC5696] 2sc5696 2SC5696 equivalent TA-3207 2sc5696 transistor using of damper in Horizontal Output Transistor TA-2994 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6663 2SC5696 NPN Triple Diffused Planar Silicon Transistor 2SC5696 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process). Adoption of MBIT process.


    Original     		ENN6663 2SC5696 2SC5696] PDF

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6663A NPN Triple Diffused Planar Silicon Transistor 2SC5696 Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage VCBO= 1600V . • High reliability(Adoption of HVP process). • Adoption o f M BIT process.


    OCR Scan     		ENN6663A 2SC5696 PDF