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    2SC5886 Price and Stock

    Toshiba America Electronic Components 2SC5886A(T6L1,NQ)

    TRANS NPN 50V 5A PW-MOLD
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    DigiKey 2SC5886A(T6L1,NQ) Cut Tape 3,033 1
    • 1 $1.06
    • 10 $0.662
    • 100 $1.06
    • 1000 $0.30355
    • 10000 $0.30355
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    2SC5886A(T6L1,NQ) Digi-Reel 3,033 1
    • 1 $1.06
    • 10 $0.662
    • 100 $1.06
    • 1000 $0.30355
    • 10000 $0.30355
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    2SC5886A(T6L1,NQ) Reel 2,000 2,000
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    • 10000 $0.23032
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    Mouser Electronics 2SC5886A(T6L1,NQ)
    • 1 $0.93
    • 10 $0.6
    • 100 $0.404
    • 1000 $0.288
    • 10000 $0.229
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    Verical 2SC5886A(T6L1,NQ) 1,473 42
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    • 100 $0.4975
    • 1000 $0.385
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    Chip1Stop 2SC5886A(T6L1,NQ) Cut Tape 1,493
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    • 10 $0.506
    • 100 $0.348
    • 1000 $0.282
    • 10000 $0.282
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    EBV Elektronik 2SC5886A(T6L1,NQ) 17 Weeks 2,000
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    Toshiba America Electronic Components 2SC5886A,L1XHQ(O

    TRANSISTOR NPN BIPO PWMOLD
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    DigiKey 2SC5886A,L1XHQ(O Reel
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    Toshiba America Electronic Components 2SC5886A(T6L1NQ)

    Trans GP BJT NPN 50V 5A 3-Pin New PW-Mold Emboss T/R - Tape and Reel (Alt: 2SC5886A(T6L1,NQ))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SC5886A(T6L1NQ) Reel 18 Weeks 2,000
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    • 10000 $0.25702
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    Avnet Asia 2SC5886A(T6L1NQ) 24 Weeks 2,000
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    Toshiba America Electronic Components 2SC5886T6L1SHRNQ

    Electronic Component
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    ComSIT USA 2SC5886T6L1SHRNQ 2,351
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    2SC5886 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5886 Toshiba Transistor Original PDF
    2SC5886 Toshiba NPN Transistor Original PDF
    2SC5886A Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: Y; Package: PW-MOLD; Number Of Pins: 3; Viewing Angle: taping only; Publication Class: High Frequency Switching Power Transistor; Application Scope: large-current switching; Comments: High hFE Original PDF
    2SC5886A,L1XHQ(O Toshiba America Electronic Components TRANSISTOR NPN BIPO PWMOLD Original PDF

    2SC5886 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C5886

    Abstract: 2SC5886
    Text: 2SC5886 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5886 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ・エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)


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    2SC5886 20070701-JA C5886 2SC5886 PDF

    c5886

    Abstract: transistor c5886 2SC5886
    Text: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •


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    2SC5886 c5886 transistor c5886 2SC5886 PDF

    c5886

    Abstract: 2SC5886
    Text: 2SC5886 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5886 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ・エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)


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    2SC5886 c5886 2SC5886 PDF

    C5886

    Abstract: transistor c5886 c5886 transistor
    Text: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •


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    2SC5886 C5886 transistor c5886 c5886 transistor PDF

    C5886A

    Abstract: No abstract text available
    Text: 2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications DC/DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max)


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    2SC5886A C5886A PDF

    c5886

    Abstract: 2SC5886
    Text: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •


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    2SC5886 c5886 2SC5886 PDF

    C5886A

    Abstract: 2SC5886 2SC5886A C5886
    Text: 2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications DC/DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max)


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    2SC5886A C5886A 2SC5886 2SC5886A C5886 PDF

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC5886A Package Name: New PW-Mold 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s


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    2SC5886A PDF

    C5886A

    Abstract: 2SC5886A
    Text: 2SC5886A 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5886A ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ・エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)


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    2SC5886A C5886A 2SC5886A PDF

    C5886

    Abstract: 2SC5886
    Text: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A · Low collector-emitter saturation: VCE (sat) = 0.22 V (max) · High-speed switching: tf = 55 ns (typ.)


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    2SC5886 C5886 2SC5886 PDF

    transistor c5886

    Abstract: No abstract text available
    Text: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •


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    2SC5886 transistor c5886 PDF

    transistor c5886

    Abstract: c5886 c5886 transistor 2SC5886
    Text: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •


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    2SC5886 transistor c5886 c5886 c5886 transistor 2SC5886 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5886A 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5886A ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ・エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)


    Original
    2SC5886A PDF

    C5886A

    Abstract: 2SC5886A
    Text: 2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications DC/DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max)


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    2SC5886A C5886A 2SC5886A PDF

    c5886

    Abstract: 2SC5886 transistor c5886
    Text: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •


    Original
    2SC5886 c5886 2SC5886 transistor c5886 PDF

    C5886A

    Abstract: 2SC5886A
    Text: 2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications DC/DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max)


    Original
    2SC5886A C5886A 2SC5886A PDF

    C5886

    Abstract: No abstract text available
    Text: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •


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    2SC5886 SC-64 C5886 PDF

    C5886A

    Abstract: 2SC5886A 2SC58 c5886
    Text: 2SC5886A 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5886A ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ・エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)


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    2SC5886A 20070701-JA C5886A 2SC5886A 2SC58 c5886 PDF

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


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    BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


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    BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent PDF

    tb6584

    Abstract: TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram
    Text: 2008-9 SYSTEM CATALOG Home Appliances s e m i c o n d u c t o r h t tp://w w w.se micon.tosh iba.co.jp/e n g Air Conditioners Induction Rice Cookers C O N T E N T S Characteristics of Motor Control Devices. 3 Dishwashers


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    TLCS-870/C1 SCE0013B E-28831 SCE0013C tb6584 TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram PDF

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


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    BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A PDF