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    2SD1222 EQUIVALENT Search Results

    2SD1222 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    2SD1222 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d1222

    Abstract: 2sd1222 equivalent 2sD1222 2SB907
    Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A)


    Original     		PDF 2SD1222 2SB907. 15transportation d1222 2sd1222 equivalent 2sD1222 2SB907

    D1222

    Abstract: 2SB907 2SD1222
    Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1222 2SB907. D1222 2SB907 2SD1222

    Untitled

    Abstract: No abstract text available
    Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1222 2SB907.

    D1222

    Abstract: 2SB907 2SD1222
    Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1222 2SB907. D1222 2SB907 2SD1222

    d1222

    Abstract: No abstract text available
    Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1222 2SB907. d1222

    Untitled

    Abstract: No abstract text available
    Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1222 2SB907.

    D1222

    Abstract: 2SB907 2SD1222
    Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1222 2SB907. D1222 2SB907 2SD1222

    D1222

    Abstract: 2SD1222 2SB907
    Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A)


    Original     		PDF 2SD1222 2SB907. 15transportation D1222 2SD1222 2SB907

    transistor B907

    Abstract: B907 2SB907 2SD1222
    Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB907 2SD1222. transistor B907 B907 2SB907 2SD1222

    transistor B907

    Abstract: B907 024 marking code 2SB907 2SD1222
    Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB907 2SD1222. transistor B907 B907 024 marking code 2SB907 2SD1222

    transistor B907

    Abstract: No abstract text available
    Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB907 2SD1222. transistor B907

    Untitled

    Abstract: No abstract text available
    Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB907 2SD1222.

    transistor B907

    Abstract: B907 2SB907 2SD1222
    Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) ·


    Original     		PDF 2SB907 2SD1222. transistor B907 B907 2SB907 2SD1222

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD1222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) WÊÊF mmr SWITCHING APPLICATIONS. U n it in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 5.2+ 0.2 POWER AMPLIFIER APPLICATIONS. j E E if c lL . ö M AX J 0.6tf-


    OCR Scan     		PDF 2SD1222 2SB907.

    2SD1222

    Abstract: 2sd1222 equivalent
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD1222 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm Cl6 MAX. FEATURES: . High DC Current Gain : hFE=2000(Min.) (VCE=2V, IC=1A) . Low Saturation Voltage


    OCR Scan     		PDF 2SD1222 2SB907. 2SD1222 2sd1222 equivalent

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SD1222 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . High DC Current Gain : ^FE i =2000(Min.) (Vq e =2V, Ic =1A) . Low Saturation Voltage •' VcE(sat)=l-5V(Max.) (Ic=2A)


    OCR Scan     		PDF 2SD1222 2SB907.

    2SB907

    Abstract: 2SD1222
    Text: 2SD1222 TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2 S D 1 222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm (A) HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 6.8MAX., POWER AMPLIFIER APPLICATIONS • High DC Current Gain ; . • •


    OCR Scan     		PDF 2SD1222 95MAX. 2SB907. 2SB907 2SD1222

    Untitled

    Abstract: No abstract text available
    Text: 2SD1222 TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2 S D 1 222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : ^FE (1) - 2000 (Min.)


    OCR Scan     		PDF 2SD1222 2SB907.

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2SD1222 2 S D 1 222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm H A M M E R DRIVE, PULSE M O TOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : h^E (1) = 2000 (Min.)


    OCR Scan     		PDF 2SD1222 2SB907.

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD1222 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 222 SWITCHING APPLICATIONS U nit in mm H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 6.8MAX. (A) 5.2 ±0.2 c PO W ER AM PLIFIER APPLICATIONS 0.6 i 0.15 • High DC Current Gain


    OCR Scan     		PDF 2SD1222 1V11I1W 2SB907.

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SB907 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm &8UAX. FEATURES: . High DC Current Gain : h F E l =2000(Min.) (VCE=~2V, IC=-1A) . Low Saturation Voltage : VcE(sat)=-l-5V(Max.) (Ic=-2A)


    OCR Scan     		PDF 2SB907 2SD1222.

    cfl low loss drive

    Abstract: No abstract text available
    Text: T O SH IB A 2SB907 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB907 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm & 8 MAX. 0.6 MAX. 5 .2 ± D .2 ÏZ • High DC Current Gain


    OCR Scan     		PDF 2SB907 2SD1222. cfl low loss drive

    7550 - 1

    Abstract: 2SB907 2SD1222
    Text: TOSHIBA 2SB907 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB907 Unit in mm SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS PO W ER AM PLIFIER APPLICATIONS • High DC Current Gain : hpE(i) = 2000 (Min.) (V^E = -2 V , Iq


    OCR Scan     		PDF 2SB907 2SD1222. 7550 - 1 2SB907 2SD1222

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SB907 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB907 SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE(i) = 2000 (Min.) (VCE = -2 V , IC = -1 A )


    OCR Scan     		PDF 2SB907 2SD1222.