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    2SD1410A Search Results

    2SD1410A Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1410A Toshiba TRANS DARLINGTON NPN 250V 6A 3(2-10R1A) Original PDF
    2SD1410A Unknown NPN Transistor Scan PDF
    2SD1410A Toshiba Silicon NPN triple diffused type transistor for igniter, high voltage switching applications Scan PDF
    2SD1410AF Toshiba 2SD1410A - Trans Darlington NPN 250V 6A 3-Pin(3+Tab) TO-220NIS Original PDF

    2SD1410A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1410A

    Abstract: 2SD1410A
    Text: 2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1410A Industrial Applications High Voltage Switching Applications • Unit: mm High DC current gain: hFE = 2000 (min.) (VCE = 2 V, IC = 2 A) Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SD1410A D1410A 2SD1410A

    D1410A

    Abstract: 2SD1410A
    Text: 2SD1410A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1410A 通 信 工 業 用 ○ 高電圧スイッチング用 • 単位: mm 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 2 A) 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SD1410A 2-10R1A D1410A 2SD1410A

    D1410A

    Abstract: 2SD1410A 2-10R1A
    Text: 2SD1410A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1410A 通 信 工 業 用 ○ 高電圧スイッチング用 • 単位: mm 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 2 A) 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SD1410A 2-10R1A 20070701-JA D1410A 2SD1410A 2-10R1A

    D1410A

    Abstract: 2SD1410A
    Text: 2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1410A Industrial Applications High Voltage Switching Applications • Unit: mm High DC current gain: hFE = 2000 (min.) (VCE = 2 V, IC = 2 A) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SD1410A D1410A 2SD1410A

    D1410A

    Abstract: 2SD1410A
    Text: 2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1410A Industrial Applications High Voltage Switching Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 2 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SD1410A D1410A 2SD1410A

    D1410A

    Abstract: No abstract text available
    Text: 2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1410A Industrial Applications High Voltage Switching Applications • Unit: mm High DC current gain: hFE = 2000 (min.) (VCE = 2 V, IC = 2 A) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SD1410A 2-10R1A D1410A

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    2SK1045

    Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
    Text: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100


    Original     		PDF 2SC642A O-204AA/TO-3: 2SC643 2N4030DIE 2C4030 2SC643A 2SK1045 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


    Original     		PDF TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SD1410A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 4 1 OA IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 • . 03.2 ± 0.2 2.7± 0.2 High DC Current Gain : hp’g = 2000 Min.


    OCR Scan     		PDF 2SD1410A

    004AI

    Abstract: No abstract text available
    Text: TOSHIBA 2SD1410A TOSHIBA TRANSISTOR n SILICON NPN TRIPLE DIFFUSED TYPE n mmr u u mm m m m A ir m INDUSTRIAL APPLICATIONS Unit in mm IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS • High DC Current Gain : hFE = 2000 Min. (V ç E = 2V, Iç = 2 A )


    OCR Scan     		PDF 2SD1410A 004AI

    2SD141

    Abstract: 2SD1410A
    Text: TO SH IBA 2SD1410A TOSHIBA TRANSISTOR 2 S SILICON NPN TRIPLE DIFFUSED TYPE D 1 4 1 O A Unit in mm IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS • r 10 ±0.3 -y 5< ÍY^ High DC Current Gain : hjpg = 2000 Min. o iV ' •nP = 2—V. •* Tn = 2 A}'


    OCR Scan     		PDF 2SD1410A 2SD141 2SD1410A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD1410A 2 S D 1 4 1 OA TOSHIBA TRANSISTOR IGNITER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 • High DC Current Gain : hpg = 2000 Min. ^3.2 ±0.2 2.7Í0.2 = 2V, I q = 2A)


    OCR Scan     		PDF 2SD1410A

    2SD141

    Abstract: 2SD1410A
    Text: TO SHIBA 2SD1410A 2 S D 1 4 1 OA TO SHIBA TRANSISTOR IGNITER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE HIGH VOLTAGE SW ITCHING APPLICATIONS • High DC Current Gain : hp^ —2000 Min. (V£ e = 2V, Iq = 2A) INDUSTRIAL APPLICATIONS Unit in mm r <v> O)


    OCR Scan     		PDF 2SD1410A 2SD141 2SD1410A

    2SC3133 cross reference

    Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
    Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905


    OCR Scan     		PDF 2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013 2SA1015 2SA1016 2SA1017 2SA1019 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288