D1733
Abstract: 2SD1733F5 MARKING CODE f5 transistor BA 14 2SB1181 TA-10-03 2SD1733FS BA, TRANSISTOR
Text: 2SD1733F5 Transistor, NPN Features • available in CPT F5 SC-63 package • package marking: D1733-AQ, where ★ is hFE code and Q is lot number • high breakdown voltage and large current capacity: VCE0 = 80 V, lc = 1A • low collector saturation voltage
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2SD1733F5
SC-63)
D1733
2SB1181
2SD1733FS
MARKING CODE f5
transistor BA 14
TA-10-03
2SD1733FS
BA, TRANSISTOR
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2SD1733F5
Abstract: 2SB1181F5
Text: h ~7 > V ^ £ / T ransistors 2 S D 1 T 3 3 p 2SD1733F5 g i e i r ^ “ > 7 ^ y i / - t » N P N Epitaxial Planar NPN Silicon Transistors i& J iiÄ ^ ^ iitiffl/L o w Freq. Power Amp. • WfêTj-jiia/Dimensions Unit : mm • 435 1) W E , ife"P<fc -5 o V ceo — 8 0 V ? lc = 1 A
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2SD1733F5
2SB1181F5
2SB1181F5.
2SD1733F5
2SB1181F5
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Untitled
Abstract: No abstract text available
Text: ROHM CO LTD MOE 5 n 7 0 2 0 = ^ 0005^45 T • RHM h*-7 > y Z. $ / I ransistors 2SD1733/2SD1733F5 T-ZZ-07 2SD1 733 0 9 ^ 4 • w i l l NPN y ‘J = l > i S J U j M ^ l f f l / L o w Freq. P ow er Amp. Epitaxial Planar NPN S ilico n Transistors 7 ^ ^ ^ ^ / w ilF S
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2SD1733/2SD1733F5
T-ZZ-07
2SB1181
2SB1181.
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Untitled
Abstract: No abstract text available
Text: / T ransistors 2SD1733/2SD1733F5 2SD 1733 2SD 1733F5 NPN ' > V = i > b - 7 > v Z $ Freq. Power Amp. Epitaxial Planar NPN Silicon Transistors • 1 raBGE, \ l i ± l l / Dimens'ons U n it: mm) tfe-5 0 V c e o — 80 V , lc = 1 A 2) Low V ce ( sat | T i 5 O
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2SD1733/2SD1733F5
1733F5
2SB1181.
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2SB1168
Abstract: 2sb1163 2SD1731 2SD1713 2SD1714 2SD1715 2SD1716 2SD1718 2SD1719 2SD1720
Text: - 262 - Ta=25XïP*Ef]fÎTc=25eC m 2SD1713 2SD1714 2SD1715 2SD1716 2SD1717 2SD1718 2SD1719 2SD1720 2SD1722 2SD1723 2SD1724 2SD1725 2SD1726 2SD1727 2SDÌ728 2SD1729 2SD1730 2SD1731 2SD1732 2SD1733 2SD1733F5 2SD1734 2SDÎ735 2SD1736 2SD1737 2SD1738 2SD1739
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2SD1713
2SD1714
2SD1715
2SD1716
2SM717
2SD1718
2SD1719
2SD1720
T0-220F
2SD1734
2SB1168
2sb1163
2SD1731
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D1733
Abstract: transistors 2sd 2500 2SD1733F5 transistor 239
Text: 2SD1733F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1733-*Q, where ★ is hFE code and □ is lot number • high breakdown voltage and large current capacity: VCE0 = 80 V, lc = 1A • low collector saturation voltage
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2SD1733F5
SC-63)
D1733-
2SB1181
2SD1733F5
1733F5
D1733
transistors 2sd 2500
transistor 239
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2SD1733F5
Abstract: No abstract text available
Text: h -7 > y 7k$ /Transistors 2SD1733F5 1 • w w r W Epitaxial Planar NPN Silicon Transistors Freq. Power Amp. i W f ^ t ; i @ / D imensions Unit : mm V ceo = 80V , lc = 1 A 6 .5 ± 0 . 2 5. 2) Low Vce (sat) T’ & -5 0 r + 0 2 -0 I , i Í 3) 2SB1181F5 ¿ = l > y j T ' * 5 o
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2SD1733F5
2SB1181F5
2SB1181F5.
SC-63
742ani
0011Dfl2
2SD1733F5
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KY 719
Abstract: 122JK TB163TK TB143TK
Text: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75
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2SK1973F5
2SK2041
2SK2042
2SK2094F5
2SK2103
2SA1036K
2SA1037AK
2SA1037AKLN
2SA1455K
RU101
KY 719
122JK
TB163TK
TB143TK
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TA143E
Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Text: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0
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2SK1973F5
2SK2041
2SK2042
2SK2094F5
2SK2103
RU101
RU201
RU901
TA143E
2SD 647 transistor
TRANSISTOR 2SC 733
C4672
144EK
113ZE
Transistor 2SA 2SB 2SC 2SD
114EU
TC114EKA
TA123JE
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IMH10
Abstract: No abstract text available
Text: Index Index 2SA1036K 69 2SA1037AK 73 2SA1514K 77 2SA1576A 73 2SA1577 69 2SA1579 77 2SA1727F5 81 2SA1759 85 2SA1774 73 2SA1797 89 2SA1807F5 92 2SA1834F5 96 2SA1862F5 100 2SA1870 104 2SA1900 106 2SC4617 169 2SC4649 160 2SC4672 201 2SC4713K 204 2SC4774 204 2SC4938 209
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2SA1036K
2SA1037AK
2SA1514K
2SA1576A
2SA1577
2SA1579
2SA1727F5
2SA1759
2SA1774
2SA1797
IMH10
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tc 144e
Abstract: ry 130-2 TZ 1148 413 a933s C2673 TA78 739 TZ 1148 mc 1302 L 930DT
Text: M H /T y p e Number List I' -y > v X £ /T ransistors 2S A785. 75 2S A 790. 78 2 S A 7 9 0 M .81
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Untitled
Abstract: No abstract text available
Text: / T ransistors 2SB1181 i t ° 2 * ' > 7 ^ U 7 ° U - : H £ P N P '> U = I > h 7 > y ^ ^ 2SB 1181 Epitaxial Planar PNP Silicon Transistors ISJijJ& Elifril'Uffl/Low Freq. Power Amp. • ^Jfi'tfjiEI./D im ensions Unit : mm ± n m T ‘$>Zo 1) S W U , V c e o = —80V, lc = — 1A
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2SB1181
2SD1733,
2SD1133F5
SC-64
500mA/
100mA
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2SB1181F5
Abstract: 2SD1733F5
Text: V~7 > v X £ /Transistors 2 1 S B 1 8 1 2S B 1181F5 F 5 Epitaxial Planar PNP Silicon Transistors ftS i& S ^ lfS tiffi/L o w Freq. Power Amp. i ^ J f^ jiB /D im e n s io n s Unit : mm • &£ Vqeo= —80V, lc = —1A ^ h p E r o iJ - T - U x - f i f & ' o
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2SB1181F5
2SD1733F5
2SD1733F5.
sc-63
2SD1733F5
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Untitled
Abstract: No abstract text available
Text: 2SB1181F5 / T ransistors 2SB 1181F5 x t '$ * y 7 J l '7 L '- + B P N P y 'J 3 > b 7 > y Z $ Epitaxial Planar PNP Silicon Transistors if t l^ l^ ii'U f f l/L o w Freq. Power Amp. W f ? " i ; £ l ! / D ir n e n s io n s U n i * : m m 1 ) ia S H E , V ceo= — 80V ,
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2SB1181F5
1181F5
2SD1733F5
2SD1733F5.
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2SD1966
Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
Text: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5
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2SA785
2SA790
2SA790M
2SA806
2SA821
2SA825
2SA825S
2SA83Û
2SA830S
2SA854
2SD1966
2SD1255M
2SB maintenance
IMB6
2SC2808
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