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    Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor 2SD2114KVLT1G Series Series zFeatures S-L 2SD2114KVLT1G 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. 3 VEBO =12V (Min.) 3) Low VCE (sat). 1 VCE (sat) = 0.18V (Typ.)


    Original     		PDF L2SD2114KVLT1G 2SD2114KVLT1G 500mA 236AB) AEC-Q101 S-L2SD2114KVLT1G OT-23