Untitled
Abstract: No abstract text available
Text: Transistor 2SD2216J Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462J Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 0.50 0.27±0.02 0.50 +0.05 1.00±0.05 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat .
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2SD2216J
2SB1462J
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2SB1462J
Abstract: 2SD2216J SC-89
Text: Transistors 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 0.375 2 0 to 0.02 (0.50)(0.50) (0.80) 1 0.27±0.02 5˚ 0.70+0.05 –0.03 • High forward current transfer ratio hFE
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2SD2216J
2SB1462J
2SB1462J
2SD2216J
SC-89
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 (0.375) 2 0 to 0.02
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2002/95/EC)
2SD2216J
2SB1462J
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2SB1462J
Abstract: 2SD2216J
Text: Transistor 2SB1462J Silicon PNP epitaxial planer type For general amplification Complementary to 2SD2216J Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 VCBO –60 V VCEO –50 V Emitter to base voltage VEBO –7 V Peak collector current ICP –200 mA Collector current
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2SB1462J
2SD2216J
2SB1462J
2SD2216J
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462J • Package • High forward current transfer ratio hFE
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2002/95/EC)
2SD2216J
2SB1462J
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2SB1462J
Abstract: 2SD2216J
Text: Transistor 2SD2216J Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462J Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 0.50 0.27±0.02 0.50 +0.05 1.00±0.05 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat .
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2SD2216J
2SB1462J
2SB1462J
2SD2216J
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IC4800
Abstract: 2SB1462J 2SD2216J
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462J • Features ue pl d in an c se ed lud pl vi an m m es
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2002/95/EC)
2SD2216J
2SB1462J
IC4800
2SB1462J
2SD2216J
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2SB1462J
Abstract: 2SD2216J SC-89
Text: Transistor 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Unit: mm For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 5˚ Symbol Rating Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage
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2SD2216J
2SB1462J
2SB1462J
2SD2216J
SC-89
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 • High forward current transfer ratio hFE
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2002/95/EC)
2SB1462J
2SD2216J
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2SB1462J
Abstract: 2SD2216J SC-89
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 0.12+0.03 –0.01 (0.375) 1.60±0.05 5˚ 2 • High forward current transfer ratio hFE
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2002/95/EC)
2SB1462J
2SD2216J
2SB1462J
2SD2216J
SC-89
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2SB1462J
Abstract: 2SD2216J
Text: Transistor 2SB1462J Silicon PNP epitaxial planer type For general amplification Complementary to 2SD2216J 1.60+0.05 –0.03 1.00±0.05 • Features 1 Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –50 V Emitter to base voltage
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2SB1462J
2SD2216J
2SB1462J
2SD2216J
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 (0.375) 2 0 to 0.02
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2002/95/EC)
2SD2216J
2SB1462J
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 • High forward current transfer ratio hFE
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2002/95/EC)
2SB1462J
2SD2216J
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2SB1462J
Abstract: 2SD2216J SC-89
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 0.12+0.03 –0.01 (0.375) 1.60±0.05 5˚ 2 • High forward current transfer ratio hFE
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2002/95/EC)
2SB1462J
2SD2216J
2SB1462J
2SD2216J
SC-89
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2SB1462J
Abstract: 2SD2216J SC-89
Text: Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 • High forward current transfer ratio hFE • SS-Mini type package, allowing downsizing of the equipment and
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2SB1462J
2SD2216J
2SB1462J
2SD2216J
SC-89
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 1 • High forward current transfer ratio hFE
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2SB1462J
2SD2216J
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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UP04598G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04598G Silicon NPN epitaxial planar type For high frequency amplification (Tr1) For low frequency amplification (Tr2) • Features Package Two elements incorporated into one package (Each transistor is separated)
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UP04598G
2SC2404
2SD2216J
UP04598G
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lcd control board schematic
Abstract: R8025 IC8001 c8015 C8014 C8013 R8025 ac AN2540FHQ-V schematic diagram ac voltage regulator schematic diagram ac regulator
Text: NOTE: FOR SCHEMATIC DIAGRAM AND CIRCUIT BOARD LAYOUT NOTES, REFER TO BEGINNING OF SCHEMATIC SECTION. NOTE: PARTS MARKED "PT" ARE NOT USED. NOTE: For placing a purchase order of the parts, be sure to use the part number listed in the parts list. Do not use the part number on this diagram.
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Q8008
2SB1462J08
L8004
D8007
D8008
R8021
L8001
Q8004
R8004
lcd control board schematic
R8025
IC8001
c8015
C8014
C8013
R8025 ac
AN2540FHQ-V
schematic diagram ac voltage regulator
schematic diagram ac regulator
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C3507 transistor
Abstract: C3507 C3502 C3518 c3506 C4804 Q1009 transistor C3552 IC1002 c3552
Text: PV-GS2P / PV-GS9P / PV-GS12P / PV-GS14P / PV-GS15P / PV-GS9PC / PV-GS13PC / PV-GS15PC NOTE: For placing a purchase order of the parts, be sure to use the part number listed in the parts list. Do not use the part number on this diagram. MAIN IX SCHEMATIC DIAGRAM
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PV-GS12P
PV-GS14P
PV-GS15P
PV-GS13PC
PV-GS15PC
Q3506
UNR9214
C3551
L3506
L3507
C3507 transistor
C3507
C3502
C3518
c3506
C4804
Q1009
transistor C3552
IC1002
c3552
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2SA1586Y
Abstract: tX-2 27MHz MA159A-TX 2.2-20V matrix CCD 2SA1586YG conditioning circuits for window TV on/off sensor MB88347 si 1125 hd video signal circuit diagram tv sony
Text: MCX18N00A/MCX18N00B Micro Unit CCD Description The micro unit CCD is a CCD color camera unit with built-in CCD image sensor, drive system IC, sample-and-hold IC, signal processor IC and lens system. 64 pin QFN Ceramic Features • Ultra-compact size: MCX18N00A
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MCX18N00A/MCX18N00B
MCX18N00A
MCX18N00B
000-pixel
MB88347
AK6420
AVDD64-R
50max
2SA1586Y
tX-2 27MHz
MA159A-TX
2.2-20V
matrix CCD
2SA1586YG
conditioning circuits for window TV on/off sensor
MB88347
si 1125 hd
video signal circuit diagram tv sony
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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OCR Scan
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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