2sj111
Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118
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2SJ101
2SJ102
2SJ103
2SJ104
2SJ105
2SJ106
2SJ107
2SJ108
2SJ109
2SJ110
2sj111
2SJ131
2sj110
2SJ112
2sj155
2SJ124
transistor 2sj162
2SJ109
2SJ113
2SJ122
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Transistor 2sj108
Abstract: 2SJ108 2SK370 Toshiba 2SJ
Text: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)
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2SJ108
2SK370
Transistor 2sj108
2SJ108
2SK370
Toshiba 2SJ
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2SK370 TOSHIBA
Abstract: 2SJ108 Toshiba 2SJ
Text: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)
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2SJ108
2SK370
25esented
2SK370 TOSHIBA
2SJ108
Toshiba 2SJ
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2sk170 FET
Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch
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2SK246
2SJ103
2SK117
2SK362
2SK363
2SK364
2SJ104
2SK30ATM
2SK170
2SJ74
2sk170 FET
Junction-FET
fet to92
2SK118
2SJ74
2sk879
2sj105
2SJ14
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2SJ108
Abstract: 2SK370
Text: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)
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2SJ108
2SK370
2SJ108
2SK370
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2SJ108
Abstract: 2SK370 Toshiba 2SJ
Text: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. · High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)
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2SJ108
2SK370
2SJ108
2SK370
Toshiba 2SJ
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2SK370
Abstract: 2SJ108
Text: 2SK370 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370 For Low Noise Audio Amplifier Applications Unit: mm • Suitable for use as first stage for equalizer and MC head amplifiers. · High |Yfs|: |Yfs| = 22 ms typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)
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2SK370
2SJ108
2SK370
2SJ108
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2SJ108
Abstract: 2SK370 Toshiba 2SJ 2SK370 TOSHIBA
Text: 2SK370 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370 For Low Noise Audio Amplifier Applications Unit: mm • Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 22 ms typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)
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2SK370
2SJ108
2SJ108
2SK370
Toshiba 2SJ
2SK370 TOSHIBA
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2SK370
Abstract: 2SJ108
Text: TOSHIBA 2SJ108 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 LOW NOISE AUDIO AMPLIFIER APPLICATIONS • U nit in mm Recommended for First Stages of EQ Amplifiers and MC Head 4.2MAX — Amplifiers. • High |Yfs| x: < I fSI ro 1
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2SJ108
--10V,
55MAX
----10V,
2SK370
2SJ108
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SJ108 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS Recommended for First Stages of EQ Amplifiers and MC Head Amplifiers. 4 .2 M A X . H igh |Yfs| : |Yfs| = 22mS Typ. (VDS= —10V, VGS = 0, IDSS= -3m A )
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2SJ108
2SK370
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2SJ108
Abstract: 2SK370
Text: 2SJ108 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS • Recommended for First Stages of EQ Amplifiers and MC Head Amplifiers. • High |Yfs| : |Yfs| = 22mS Typ. (VDS= -10V , VGS = 0, IDSS=-3m A )
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2SJ108
----10V,
2SK370
XV11YV1U
55MAX.
2SJ108
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ108 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 LOW NOISE AUDIO AMPLIFIER APPLICATIONS • Unit in mm Recommended for First Stages of EQ Amplifiers and MC Head 4.2 VI A X . Amplifiers. • TTicrVi e >~ II V * lry Ji
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2SJ108
--10V,
----10V,
2SK370
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2N3904 331 transistor
Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4401
2N4402
2N3904 331 transistor
C549 transistor
2SK1227
transistor 1201 1203 1205
transistor C549
transistor Hand book
2N5551 2SC1815 2SK246
2n4401 331
02CZ27
transistor 737
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2SK370
Abstract: 2SJ108
Text: T O S H IB A 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfe| : |Yfs| = 22ms Typ. (VD S=10V , VGS = 0, IDSS = 3mA)
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2SK370
2SJ108
55MAX.
2SK370
2SJ108
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2SJ108
Abstract: 2SK370 IDSS -6.5mA
Text: TOSHIBA 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS • U nit in mm Suitable for Use as First Stage for Equalizer and MC Head 4.2MAX. Amplifiers. High |Yfc| : |Yfs | = 22ms Typ. (VDg = 10V, VGS = 0, IDg g = 3mA)
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2SK370
2SJ108
55MAX
2SK370
IDSS -6.5mA
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2SC3378
Abstract: 2SK118 2SC245S 2sa137 2SA1048 2SA1049 2SA1150 2SC2458 2SC2469 2SC2710
Text: Powered —3 O n X by H 2. MINI PACKAGE SERIES CD ICminer.com > rH H H n 73 m Electronic-Library —3 m \ Application o "O '— 3 O General Purpose’* Low Noise High Voltage High Current Ji High Current O X m m o Low Impedance Low N< H Audio Drive & Out
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2SC2458
2SA1048
2SC245S
2sk367
2sk370
2sk371
2sk372
2sj105
2sj107
2SC3378
2SK118
2sa137
2SA1049
2SA1150
2SC2458
2SC2469
2SC2710
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2sk405 2sj115
Abstract: 2SK389 2SK400 2SK385 2SJ109 2SJ112 2SJ114 2SK388 2SK373 2SK370
Text: - 46 - f M £ tt £ m W l % 3: fe V* & % K V * ft (V) (A) m ft* P d /P c h (W) Ig s s (max) (A) Vg s (V) ft te % te (Ta=25tî) IÇfcU (min) (max) V d s (V) (V) (V) (min) (max) Vd s (A) (A) (V) g m (min) (S) Id (A) Vd s (V) W Id (A) LF HV A, CC N D -100 GDS
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2SK368
2SK369
2SK370
2SK371
2SK372
2SK386
2SK387
2SK388
20mVmax
2SJ109
2sk405 2sj115
2SK389
2SK400
2SK385
2SJ112
2SJ114
2SK388
2SK373
2SK370
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2sj111
Abstract: 2SJ131 2SJ112 2SJ110 2SJ122 2SK722 2SJ121 2sj135 2SJ106 2SJ129
Text: - 18 - §ü % tt € m tit ià ië f f j II =e 1 K 2SJ106 L F A, A - S W 2SJ107 L F A, A ~ S W j fë £ V* V * t* (V) ft * W. X I* ft (A) P d/ Pc h (max) (A) (W) M 4# te (max) (V) Vd s (V) (Ta=25Tï) I gss Vg s (V) (min) (A) (max) V d s (A) (V) (min) (V)
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2SJ106
2SJ107
2SJ108
2SJ109
2SJ110
100kQ,
2SJ129
2SJ130
2SK722
2SJ131
2sj111
2SJ131
2SJ112
2SJ110
2SJ122
2SJ121
2sj135
2SJ106
2SJ129
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K3 7 Q FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm S u ita b le for U se as F ir s t S ta g e for E q u a liz e r a n d MC H e a d 4.2 VI A X . Amplifiers. TTiO“
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2SK370
2SJ108
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2SC3378
Abstract: 25A1048
Text: —3 O IA un H CO 3» 2. MINI PACKAGE SERIES rS fc > TRANSISTOR Application NPN PNP 2SC2458 General Purpose’* v CE sat) MAX. hFE Type No. I2SA1048 VCEO •c (V) M l PC ImW) VCE ic IV )' ‘ M ) (V) fjT Y P (MIN.) ■c 1 >B ImA) ImA) VCE (MHz), (V) O C/>
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2SC2458
I2SA1048
2SK365
2SK367
2SK370
2SK371
2SK372
2SC3378
25A1048
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2SJ108
Abstract: 2SK370
Text: TO SH IBA 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS • Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : |Yfs| = 22ms Typ. (VDS = 10V, VGS = 0, IDSS = 3mA)
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2SK370
2SJ108
55MAX
2SK370
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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2SC3378
Abstract: fet 2sK161 2SA1048 2SA1049 2SA1150 2SA1297 2SC2458 2SC2469 2SC2710 2SK184
Text: L. —3 O n X H CD 2. MINI PACKAGE SERIES > rH H H n 73 m —3 m \ o "O > TRANSISTOR < PC PNP V (mA) (mW) : 2SA1048 50 150 200 70—700/400 2SC2458(l ^2SA1048( l ) 50 150 200 High Voltage 2SC2469 ' 2SA1049 120 100 High Current 2SC2710 Ì2SA1150 30 800 High Current
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2SC2458
2SA1048
2SC24S8
2SC2469
2SA1049
2SC2710
2SA1150
2SK367
2SK370
2SC3378
fet 2sK161
2SA1297
2SC2458
2SC2469
2SC2710
2SK184
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2SJ108
Abstract: 2SK370
Text: TO SH IB A 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfe| : |Yfs| = 22ms Typ. (VD S=10V , VGS = 0, IDSS = 3mA)
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2SK370
2SJ108
55MAX.
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