TRANSISTOR j412
Abstract: No abstract text available
Text: 2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.)
|
Original
|
PDF
|
2SJ412
2-10S1B
TRANSISTOR j412
|
TRANSISTOR j412
Abstract: J412 2SJ412
Text: 2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.)
|
Original
|
PDF
|
2SJ412
TRANSISTOR j412
J412
2SJ412
|
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
|
Original
|
PDF
|
2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
|
TRANSISTOR j412
Abstract: J412 2SJ412
Text: 2SJ412 Silicon P Channel MOS Type L2-π-MOSV TOSHIBA Field Effect Transistor 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.)
|
Original
|
PDF
|
2SJ412
TRANSISTOR j412
J412
2SJ412
|
TRANSISTOR j412
Abstract: 2SJ412 J412
Text: 2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.)
|
Original
|
PDF
|
2SJ412
TRANSISTOR j412
2SJ412
J412
|
J412
Abstract: 2SJ412
Text: 2SJ412 東芝電界効果トランジスタ シリコンPチャネルMOS形 L2-π-MOSV 2SJ412 ○ リレー駆動DC-DC コンバータ用 ○ モータドライブ用 • 4 V 駆動です。 • オン抵抗が低い。 単位: mm : RDS (ON) = 0.15 Ω (標準)
|
Original
|
PDF
|
2SJ412
2-10S1B
J412
2SJ412
|
5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
|
Original
|
PDF
|
|
mosfet cross reference
Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local
|
Original
|
PDF
|
|
2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
|
Original
|
PDF
|
BCE0017B
2SK2056
2SK1603
2sk1603 datasheet
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
transistor 2SK1603
2SK3561 equivalent
2SK2915 EQUIVALENT
1045y
2SK3569 equivalent
2SK1078
|
2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
|
Original
|
PDF
|
BCE0017F
E-28831
BCE0017G
2SK3567 equivalent
2SK3569 equivalent
TPCA*8023
TK8A50D equivalent
2SK2056
2SK3878 equivalent
tpca8023
2SK941 equivalent
2SK3561 equivalent
2SK1603
|
ESM 740
Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.
|
Original
|
PDF
|
SCE0003A
ESM 740
transistor SMD t04 51
D245A
LM2804
transistor SMD t04
Solar Garden Light Controller 4 pin
2fu smd transistor
transistor t04 smd
pnp Octal Darlington Transistor Arrays DIP
WB126
|
2SK3878 equivalent
Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)
|
Original
|
PDF
|
2SK2963
2SK2962
2SJ508
2SJ509
2SK3670
2SJ313
2SJ338
2SK2013
2SK2162
2SJ360
2SK3878 equivalent
2sk2611
2SK3759
2SK3878
2SK3869
2SK2013
toshiba POWER MOS FET 2sj 2sk
2SK3868
2SK3567 equivalent
2SK2718
|
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
|
Original
|
PDF
|
P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
|
IRF9310
Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional
|
Original
|
PDF
|
device2176
r14153
CR108/D
IRF9310
mosfet cross reference
korea IRFZ44
IRF 949
replacement BUZ 36
philips master replacement guide
2SK2146
IRF540 substitution
MOSFET TOSHIBA 2SK
IRF510 substitution
|
|
|
TPCA*8064
Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
|
Original
|
PDF
|
BCE0082B
TPCA*8064
TK12A10K3
TPCA8077
2SK3567 equivalent
SSM3J328
TPCA8077-H
TJ11A10M3
TK50E06K3A
TPCA*8077
TPCA8028
|
2SJ412
Abstract: No abstract text available
Text: TO SH IBA 2SJ412 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 4 V Gate Drive Low Drain-Source ON Resistance : RdS (ON) - 0.15 ü, (Typ.)
|
OCR Scan
|
PDF
|
2SJ412
SJ412
2SJ412
|
KIV* diode
Abstract: marking 77s
Text: TOSHIBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-M O SV i <; i a 1 1 Mr v • HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS TO-22QFL U nit in mm
|
OCR Scan
|
PDF
|
2SJ412
O-22QFL
--60V)
--16A
KIV* diode
marking 77s
|
Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SJ412 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm TO-220FL 4 V Gate Drive
|
OCR Scan
|
PDF
|
2SJ412
O-220FL
|
SJ412
Abstract: 2SJ412 TRANSISTOR BC 208
Text: 2SJ412 TO SH IBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV Unit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive Low Drain-Source ON Resistance : RßS (ON) = 0.15 CI (Typ.) High Forward Transfer Admittance : |Yfs| = 7.7 S (Typ.)
|
OCR Scan
|
PDF
|
2SJ412
SJ412
SJ412
2SJ412
TRANSISTOR BC 208
|
2SJ412
Abstract: marking 77s
Text: TOSHIBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ412 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m TO-22QFL 10.3MAX 4V Gate Drive
|
OCR Scan
|
PDF
|
2SJ412
O-22QFL
2SJ412
marking 77s
|
2SJ412
Abstract: marking 77s
Text: TOSHIBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ412 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS TO-22QFL U nit in mm 10.3MAX. 4V Gate Drive
|
OCR Scan
|
PDF
|
2SJ412
marking 77s
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL M OS TYPE L2-tt-M O SV 2SJ412 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S TO-220FL U n it in m m
|
OCR Scan
|
PDF
|
2SJ412
O-220FL
|
marking 77s
Abstract: No abstract text available
Text: TO SHIBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-M O SV 2SJ412 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m TO-22QFL 10.3MAX
|
OCR Scan
|
PDF
|
2SJ412
O-22QFL
0-15il
--60V)
20kf2)
--25V,
marking 77s
|
Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SJ412 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TO-220FL 4 V Gate Drive
|
OCR Scan
|
PDF
|
2SJ412
O-220FL
|
