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    2SJ48 Search Results

    2SJ48 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ484WYTR-E Renesas Electronics Corporation Pch Single Power Mosfet -30V -2A 230Mohm Upak/Sc-62 Visit Renesas Electronics Corporation
    2SJ486ZU-TL-E Renesas Electronics Corporation Switching P-Channel Power MOSFET, MPAK, /Embossed Tape Visit Renesas Electronics Corporation
    2SJ484WYTL-E Renesas Electronics Corporation Pch Single Power Mosfet -30V -2A 230Mohm Upak/Sc-62 Visit Renesas Electronics Corporation
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    2SJ48 Price and Stock

    Rochester Electronics LLC 2SJ485-E

    PCH 4V DRIVE SERIES
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    DigiKey 2SJ485-E Bulk 513
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    Aptina Imaging 2SJ485-E

    2SJ485-E
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    Verical 2SJ485-E 18,300 592
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    Hitachi Ltd 2SJ48

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    Bristol Electronics 2SJ48 23
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    onsemi 2SJ485-E

    2SJ485 - P-Channel 4V Drive Series '
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    Rochester Electronics 2SJ485-E 18,300 1
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    Renesas Electronics Corporation 2SJ486ZU-TL-E

    2SJ486 - Small Signal P-Channel MOSFET
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    Rochester Electronics 2SJ486ZU-TL-E 1 1
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    2SJ48 Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ48 Hitachi Semiconductor LOW FREQUENCY POWER AMPLIFIER Scan PDF
    2SJ48 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SJ48 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SJ48 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ48 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SJ48 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SJ48 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ48 Unknown Scan PDF
    2SJ48 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SJ48 Unknown FET Data Book Scan PDF
    2SJ480 Sanyo Semiconductor Power Mosfets / Transistors Scan PDF
    2SJ482 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SJ482 Toshiba Original PDF
    2SJ483 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SJ483 Hitachi Semiconductor Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ483 Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ483 Renesas Technology FET Transistor, Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ483 Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ483TZ Hitachi Semiconductor MOSFET, Silicon P Channel MOSFET High Speed Power Switching, Tape and Reel Original PDF
    2SJ483TZ-E Renesas Technology Silicon P Channel MOS FET Original PDF

    2SJ48 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi 2SJ

    Abstract: Hitachi DSA002757
    Text: 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd. Edition Features • Low on-resistance R DS on = 0.18 Ω typ. (at V GS = –10V, I D = –1A) • Low drive current • High speed switching • 4V gate drive devices. Outline


    Original     		PDF 2SJ484 ADE-208-501 Hitachi 2SJ Hitachi DSA002757

    ADE-208-512

    Abstract: Hitachi 2SJ Hitachi DSA002757
    Text: 2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching ADE-208-512 A 2nd. Edition Features • Low on-resistance R DS on = 0.5 Ω typ. (at V GS = –4V, I D = –100 mA) • 2.5V gate drive devices. • Small package (MPAK). Outline 2SJ486 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ486 ADE-208-512 Hitachi 2SJ Hitachi DSA002757

    Hitachi 2SJ

    Abstract: Hitachi DSA002779
    Text: 2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching ADE-208-512 A 2nd. Edition Features • Low on-resistance RDS on = 0.5 Ω typ. (at VGS = –4V, ID = –100 mA) • 2.5V gate drive devices. • Small package (MPAK). Outline 2SJ486 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ486 ADE-208-512 Hitachi 2SJ Hitachi DSA002779

    Untitled

    Abstract: No abstract text available
    Text: 2SJ486 Silicon P Channel MOS FET REJ03G0869-0300 Previous: ADE-208-512A Rev.3.00 Sep 07, 2005 Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices.


    Original     		PDF 2SJ486 REJ03G0869-0300 ADE-208-512A) PLSP0003ZB-A

    Hitachi 2SJ

    Abstract: Hitachi DSA00279
    Text: 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd. Edition Features • Low on-resistance R DS on = 0.18 Ω typ. (at V GS = –10V, I D = –1A) • Low drive current • High speed switching • 4V gate drive devices. Outline


    Original     		PDF 2SJ484 ADE-208-501 Hitachi 2SJ Hitachi DSA00279

    2SJ486

    Abstract: ADE-208-512 Hitachi 2SJ Hitachi DSA00395
    Text: 2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching ADE-208-512 A 2nd. Edition Features • Low on-resistance R DS on = 0.5 Ω typ. (at V GS = –4V, ID = –100 mA) • 2.5V gate drive devices. • Small package (MPAK). Outline MPAK 3 1 D 2 1. Source


    Original     		PDF 2SJ486 ADE-208-512 2SJ486 Hitachi 2SJ Hitachi DSA00395

    2SJ483

    Abstract: 2SJ483TZ-E PRSS0003DC-A
    Text: 2SJ483 Silicon P Channel MOS FET REJ03G0867-0200 Previous: ADE-208-519 Rev.2.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance


    Original     		PDF 2SJ483 REJ03G0867-0200 ADE-208-519) PRSS0003DC-A 2SJ483 2SJ483TZ-E PRSS0003DC-A

    2SJ486ZU-TR-E

    Abstract: 2SJ486 2SJ486ZU-TL-E SC-59A
    Text: 2SJ486 Silicon P Channel MOS FET REJ03G0869-0300 Previous: ADE-208-512A Rev.3.00 Sep 07, 2005 Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices.


    Original     		PDF 2SJ486 REJ03G0869-0300 ADE-208-512A) PLSP0003ZB-A 2SJ486ZU-TR-E 2SJ486 2SJ486ZU-TL-E SC-59A

    j485

    Abstract: 2SJ485 2SJ48
    Text: Ordering number:ENN6434 P-Channel Silicon MOSFET 2SJ485 Ultrahigh-Speed Switching Applications Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2083B [2SJ485] 2.3 5.5 1.5 6.5 5.0 4 0.5 7.0 Features 1.2 7.5 0.8 1.6


    Original     		PDF ENN6434 2SJ485 2083B 2SJ485] 2092B j485 2SJ485 2SJ48

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    Hitachi 2SJ

    Abstract: Hitachi DSA002779
    Text: 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd. Edition Features • Low on-resistance RDS on = 0.18 Ω typ. (at VGS = –10V, ID = –1A) • Low drive current • High speed switching • 4V gate drive devices. Outline 2SJ484


    Original     		PDF 2SJ484 ADE-208-501 Hitachi 2SJ Hitachi DSA002779

    J485

    Abstract: 2SJ485 TA-250-4
    Text: Ordering number:ENN6434 P-Channel Silicon MOSFET 2SJ485 Ultrahigh-Speed Switching Applications Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2083B [2SJ485] 2.3 5.5 1.5 6.5 5.0 4 0.5 7.0 Features 1.2 7.5 0.8 1.6


    Original     		PDF ENN6434 2SJ485 2083B 2SJ485] 2092B J485 2SJ485 TA-250-4

    2SJ48

    Abstract: No abstract text available
    Text: 2SJ483 Silicon P Channel MOS FET REJ03G0867-0200 Previous: ADE-208-519 Rev.2.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance


    Original     		PDF 2SJ483 REJ03G0867-0200 ADE-208-519) PRSS0003DC-A 2SJ48

    Hitachi 2SJ

    Abstract: Hitachi DSA002757
    Text: 2SJ483 Silicon P Channel MOS FET High Speed Power Switching ADE-208-519 1st. Edition Features • Low on-resistance R DS on = 0.08Ω typ (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A Outline 2SJ483


    Original     		PDF 2SJ483 ADE-208-519 Hitachi 2SJ Hitachi DSA002757

    WY SC-62 HITACHI

    Abstract: 2SJ484 Hitachi DSA00389
    Text: 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd. Edition Features • Low on-resistance R DS on = 0.18 Ω typ. (at V GS = –10V, ID = –1A) • Low drive current • High speed switching • 4V gate drive devices. Outline


    Original     		PDF 2SJ484 ADE-208-501 WY SC-62 HITACHI 2SJ484 Hitachi DSA00389

    2SJ484

    Abstract: 2SJ484WYTL-E 2SJ484WYTR-E
    Text: 2SJ484 Silicon P Channel MOS FET REJ03G0868-0300 Previous: ADE-208-501A Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • High speed switching


    Original     		PDF 2SJ484 REJ03G0868-0300 ADE-208-501A) PLZZ0004CA-A 2SJ484 2SJ484WYTL-E 2SJ484WYTR-E

    2SJ486

    Abstract: Hitachi 2SJ DSA003642
    Text: 2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching ADE-208-512A Z 2nd. Edition Jul. 1997 Features • Low on-resistance R DS(on) = 0.5 Ω typ. (at V GS = –4V, ID = –100 mA) • 2.5V gate drive devices. • Small package (MPAK). Outline MPAK


    Original     		PDF 2SJ486 ADE-208-512A 2SJ486 Hitachi 2SJ DSA003642

    2SJ483

    Abstract: Hitachi 2SJ DSA003642
    Text: 2SJ483 Silicon P Channel MOS FET High Speed Power Switching ADE-208-519 Z 1st. Edition Jun. 1997 Features • Low on-resistance R DS(on) = 0.08Ω typ (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A


    Original     		PDF 2SJ483 ADE-208-519 O-92MOD. 15lectronic 2SJ483 Hitachi 2SJ DSA003642

    Untitled

    Abstract: No abstract text available
    Text: 2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching HITACHI Features • Low on-resistance RDsum> = 0.5 Q typ. at V os= -4V , ID= -100 mA • 2.5V gate drive devices. • Small package (MPAK). Outline M PAK ô s 530 ADE-208-512 A 2nd. Edition 2SJ486


    OCR Scan     		PDF 2SJ486 ADE-208-512 2SJ486

    Hitachi 2SJ

    Abstract: No abstract text available
    Text: 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching HITACHI ADE-208-501 A 2nd. Edition Features • Low on-resistance ^DS on —0.18 i2 typ. (at V cs = -I0 V , ID = —I A) • Low drive current • High speed switching • 4V gate drive devices.


    OCR Scan     		PDF 2SJ484 ADE-208-501 10Ofis, Hitachi 2SJ

    2SJ49 2sk134

    Abstract: 2SJ49 2SJ50 2SK134 2SK135 2SJ48 2SJ48 HITACHI 2SK133 2sk133 2Sj48 diode 2U 14
    Text: b l E I 44<ib5DS G D I S Ö I S DAT IHIT4 2SJ48,2SJ49,2SJ50^=5^ SILICON P-CHANNEL MOS FET H I T A C H I / OPTOELECTRONICS ) LOW FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK133. 2SK134, 2SK135 • FEATURES • High Power Gain. • Excellent Frequency Response.


    OCR Scan     		PDF 2SK133, 2SK134, 2SK135 2SJ48 2SJ49 2SJ50 -2SJ48 2SJ49 2sk134 2SJ50 2SK134 2SK135 2SJ48 HITACHI 2SK133 2sk133 2Sj48 diode 2U 14

    2SJ49 2sk134

    Abstract: 2SJ49 2SJ50 hitachi 2sj50 2SK135 2SJ48 2sk133 2Sj48 2SK134 2Sk135 HITACHI 2SJ50 2SK135
    Text: b lE I 44<ib 5D S G D IS Ö IS DAT IH IT 4 2SJ48,2SJ49,2SJ50^=5^ SILICON P-CHANNEL MOS FET H I T A C H I / OPTOELECTRONICS ) LOW FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK133. 2SK134, 2SK135 • FEATURES • High Power Gain. • Excellent Frequency Response.


    OCR Scan     		PDF 2SK133, 2SK134, 2SK135 2SJ48 2SJ49 2SJ50 2SJ50 2SJ49 2sk134 hitachi 2sj50 2SK135 2sk133 2Sj48 2SK134 2Sk135 HITACHI 2SJ50 2SK135

    Hitachi 2SJ

    Abstract: No abstract text available
    Text: 2SJ483 Silicon P Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance R dsioh = 0-08Q typ at VGS = -1 0 V, ID = -2.5 A) • 4V gate drive devices. • Large current capacitance ID= -5 A Outline 5 16 ADE-208-519 1st. Edition 2SJ483


    OCR Scan     		PDF 2SJ483 ADE-208-519 0-08Q 2SJ483 Hitachi 2SJ

    2sk135

    Abstract: 2SK134 2SJ49 2sk134 hitachi 2sk135 2SK133 2Sk135 HITACHI 2Sk134 HITACHI 2SK13S HITACHI 2SK133 2sk133 2Sj48
    Text: blE D *44^205 ÜD13D0Ö 217 IHIT4 2SK133,2SK134,2SK135 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ48, 2SJ49, 2SJ50 • FEATURES • • • • • • • High Power Gain. Excellent Frequency Response.


    OCR Scan     		PDF D13D0Ö 2SK133 2SK134 2SK135 2SJ48, 2SJ49, 2SJ50 35FOR 2sk135 2SJ49 2sk134 hitachi 2sk135 2Sk135 HITACHI 2Sk134 HITACHI 2SK13S HITACHI 2SK133 2sk133 2Sj48