2SK MOSFET RF POWER Search Results

2SK MOSFET RF POWER Result Highlights (5)

Part	Manufacturer	Description
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

2SK MOSFET RF POWER Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2sk1058 equivalent Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297 Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,	OCR Scan	O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297	PDF
2sk1299 Abstract: PF0042 2SJ295 2SJ299 2SK1919 PF0040 KWSA103 PF0030 Hitachi Scans-001 Text: 29 HITACHI 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m	OCR Scan	303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2sk1299 PF0042 2SJ295 2SJ299 2SK1919 Hitachi Scans-001	PDF
2sj217 Abstract: pf0030 hitachi 2SJ295 2SK1919 PF0040 KWSA103 PF0030 PF0042 2SJ214 2SJ220 Text: HITACHI 29 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m	OCR Scan	303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2sj217 pf0030 hitachi 2SJ295 2SK1919 PF0042 2SJ214 2SJ220	PDF
2sj177 Abstract: 2SJ299 PF0040 2SJ292 2SJ295 Hitachi PF0030 TO220FM 2SJ278 2SJ279 2SJ290 Text: HITACHI 1.5.4 13 New DIV-L Series • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices	OCR Scan	2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2sj177 2SJ299 PF0040 2SJ292 2SJ295 Hitachi PF0030 TO220FM 2SJ278 2SJ279 2SJ290	PDF
2sj2 high voltage p channel mosfet Abstract: 2sj2 high voltage mosfet 2SK1778 2SJ182 2SJ299 2SK1204 2SK1763 2SJ175 2SK1665 2SK1776 Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.	OCR Scan		PDF
2sk725 equivalent Abstract: 2sk725 Text: 2SK725 FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET p S E R j I E S •Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■(Applications • Sw itching regulators	OCR Scan	2SK725 2sk725 equivalent 2sk725	PDF
PF0040 Abstract: 2sk mosfet pf0030 hitachi 2sj217 2SJ299 2sk mosfet rf power 2sk1299 2SJ214 2SJ295 2SK1919 Text: HITACHI 1.5.4 13 New DIV-L Series • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices	OCR Scan	2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 PF0040 2sk mosfet pf0030 hitachi 2sj217 2SJ299 2sk mosfet rf power 2sk1299 2SJ214 2SJ295 2SK1919	PDF
a2241 Abstract: a2240 Text: 2SK1663-L,S F U JI N-CHANNEL SILICON POWER MOS-FET _ - p o w e r m o s -f e t T Ä Ä F-I SERIES • Features ■ Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage	OCR Scan	2SK1663-L a2241 a2240	PDF
2SK1778 Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042 Text: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m	OCR Scan	303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2SK1778 2SJ177 2SJ295 PF0042	PDF
2SK1778 Abstract: 2SJ236 2SK1776 2SJ299 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094 Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.	OCR Scan	high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SJ236 2SK1776 2SJ299 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094	PDF
A2248 Abstract: No abstract text available Text: 2SK1817-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ - F-III SERIES • Features IOutline Drawings • High current • l ow no-resistance • No secondary breakdown • Low driving power • High forward Transconductance	OCR Scan	2SK1817-MR 538B-7651 A2248	PDF
mosfet equivalent Abstract: 2SK1302 Text: FEATURES ^ ¡e » N c h / < 7 - MOS F E T 2SK 1302ffia S2fflF 3i! •i B i i t f f l c i i S S i l S t i i l l i S f • « a f fif is ;( 5 0 m Q ) ic j: z « a tttm ro * ¡bim* t' • t7 5 • t - t'-y-'f ^JU O O IM ^ JU jy ± (-4 0 -C ~ + 8 5 "C ) *ttJilB n Jii	OCR Scan	2SK1302 2SK1302) 575max) mosfet equivalent	PDF
TRANSISTOR SMD catalog Abstract: Transistor 2SA 2SB 2SC 2SD AG SMD TRANSISTOR catalog mosfet Transistor smd Schottky diode TO220 TRANSISTOR regulator ssf transistor SMD smd transistor EK transistor smd sG SANKEN POWER TRANSISTOR Text: GENERAL INFORMATION SANKEN PRODUCT PREFIXES Prefix Description Info Prefix Description AG Axial-lead ultra-fast recovery rectifier ❊❏ FMS Full mold high-speed rectifier AK Axial-lead Schottky barrier diode ❊❏ FMU Full mold TO-220/TO-3P fast-recovery rectifier	Original	C01EA0 D01EB0 D03EB0 I01EC0 I02EA0 L01EA0 O01EC0 T01EC0 TRANSISTOR SMD catalog Transistor 2SA 2SB 2SC 2SD AG SMD TRANSISTOR catalog mosfet Transistor smd Schottky diode TO220 TRANSISTOR regulator ssf transistor SMD smd transistor EK transistor smd sG SANKEN POWER TRANSISTOR	PDF
2SK1082-01 Abstract: SC-65 Text: 2SK1082-01 FUJI POW ER M OS-FET N-CHANNEL SILICON POWER MOS-FET F -II SERIES • Features lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gss:= ± 3 0 V Guarantee • Avalanche-proof	OCR Scan	2SK1082-01 SC-65 Tc-25Â 11uIS> 2SK1082-01 SC-65	PDF

ens100 Abstract: 71ra Text: VX-DvU-X /ffeMOSFET V X -n SERIES P0 H 4 MOSFET O U T L IN E D IM E N S IO N S Case I E-pack 2SK2177 F 1 E 5 0 V X 2 6.6 ±0 2 2.55 - 0.2 500V 1A 0. 5 t 0 1 0.5 0 .6 * ° 2 U ± 0 .2 [Unit '•mm] k O i t o P12, 7 - l £ c * i i < £ S i > „ Lead type is available. S e e P. 12, 7-1	OCR Scan	2SK2177 300fi F1E50VX2) ens100 71ra	PDF
IRF9310 Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional	Original	device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution	PDF
3sk catalog Abstract: TE85L Toshiba Text: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS	Original	BCE0003H 3sk catalog TE85L Toshiba	PDF
hitachi mosfet power amplifier audio application Abstract: transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI Text: C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION: • UHV / VHF Tuners	Original	AmVC132 HVC133 HVC134 HVM131S HVM131SR HVM132 HVM132WK hitachi mosfet power amplifier audio application transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI	PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
MT4S300T Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476 Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones	Original	BCE0003F MT4S300T TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476	PDF
8893 single chip tv processor Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741 Text: Application Block Diagrams • Video Applications VC R System Remote Control Transmission MN171608/9 MN1513 LN66A I Display I Cylinder Motor Drive AN3813/14/15 f FL Dr MN12510 Capstan Motor Drive AN3840N V r I Remote Control Reception}] MN67508/9/6755—7	OCR Scan	MN171608/9 LN66A MN12510 AN3813/14/15 AN3840N PNA4601M MN187* MN6750* AN3126/29 AN5179/82N 8893 single chip tv processor transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn662741	PDF
MESFET Application Abstract: hitachi mosfet power amplifier audio application 2sk2685 spice 00E-12 hitachi mosfet audio application note Hitachi audio mosfet application booster gsm antenna hitachi discrete circuit diagram wireless video transmitter and re 2SK239A Text: C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION:	Original	49E-13 00E-01 00E-06 44E-13 HVC133 30E-12 27E-15 HVM132WK MESFET Application hitachi mosfet power amplifier audio application 2sk2685 spice 00E-12 hitachi mosfet audio application note Hitachi audio mosfet application booster gsm antenna hitachi discrete circuit diagram wireless video transmitter and re 2SK239A	PDF
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606	PDF
RGK 20/1 Abstract: sanken snr sanken power transistor 2SA1216 sac 187 triac motor driver full bridge 10A 2SC3855 SANKEN 2SC3909 Sanken Schottky Diode Mi 15 2SA1494 SANKEN bridge rectifier ic Text: DISCRETE DEVICES AMS-174 INTERIM ISSUE Subject to change without notice May 9, 1997 DISCRETE TRANSISTORS, DIODES, and ARRAYS Index to Sanken Electronic Components . page 2 NPN Power Transistors . 4	Original	AMS-174 RGK 20/1 sanken snr sanken power transistor 2SA1216 sac 187 triac motor driver full bridge 10A 2SC3855 SANKEN 2SC3909 Sanken Schottky Diode Mi 15 2SA1494 SANKEN bridge rectifier ic	PDF

2SK MOSFET RF POWER Search Results

2SK MOSFET RF POWER Result Highlights (5)

2SK MOSFET RF POWER Datasheets Context Search

2sk1058 equivalent

2sk1299

2sj217

2sj177

2sj2 high voltage p channel mosfet

2sk725 equivalent

PF0040

a2241

2SK1778

2SK1778

A2248

mosfet equivalent

TRANSISTOR SMD catalog

2SK1082-01

ens100

IRF9310

3sk catalog

hitachi mosfet power amplifier audio application

rjh3047

MT4S300T

8893 single chip tv processor

MESFET Application

RJP63k2

RGK 20/1