Untitled
Abstract: No abstract text available
Text: 2SK1033 MA111 Switching Diodes MA137 Silicon epitaxial planer type 0.28±0.05 Small SS-Mini type package with two incorporated elements, enabling high-density mounting Unit : mm 1 Series connection in package 3 2 Parameter Unit 80 VR +0.05 +0.05 Rating Symbol
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2SK1033
MA111
MA137
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Untitled
Abstract: No abstract text available
Text: 2SK1033 MA111 Switching Diodes MA157A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.2 1.9±0.2 1.1 –0.1 +0.2 Rating Symbol VR 80 V Peak reverse voltage VRM 80 V Single Series Repetitive peak
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2SK1033
MA111
MA157A
O-236
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Untitled
Abstract: No abstract text available
Text: 2SK1033 Power F-MOS FETs 2SK1033 Silicon N-Channel Power F-MOS Unit : mm ● High-speed secondary breakdown ● Low-voltage 16.7±0.3 ● No switching : tf =180ns typ drive 4.2±0.2 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 ON-resistance RDS(on) : RDS(on) = 0.45Ω(typ)
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2SK1033
180ns
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MA190
Abstract: 25-KHz UA102
Text: 2SK1033 MA111 Switching Diodes MA190 Silicon epitaxial planer type For switching circuits Unit : mm f0.56 max. 1 • Features ● Small capacity between pins, Ct 1st Band 2nd Band ■ Absolute Maximum Ratings Ta= 25˚C Symbol Rating Unit Reverse voltage (DC)
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2SK1033
MA111
MA190
DO-35
30MHz
MA190
25-KHz
UA102
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Untitled
Abstract: No abstract text available
Text: 2SK1033 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)
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2SK1033
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Untitled
Abstract: No abstract text available
Text: 2SK1033 Switching Diodes MA112 Silicon epitaxial planer type Unit : mm For switching circuits Cathode Anode IF AV = 200mA 0.3 0.5±0.1 ● Securing of the current capacity of the forward current (average) 0.625 ● Small S-Mini type package enabling high density mounting
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2SK1033
MA112
200mA
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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ON3105
Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Text: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S
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MN1001
MN1020215
MN1020407
MN1020415
MN1020715
MN102LF53G
MN1040
MN110
MN1101
MN115
ON3105
2sd2603
mn4117405
2sc901b
mn6520
MN1280
mn1225
MN6147C
2SC5573
GN2013
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2SK1033
Abstract: 25C1 2SK103
Text: P o w er F-MOS FET 2SK1033 2SK1033 Silicon N-channel Power F-M O S FET • Package D im ensions ■ Features • L ow ON r e s is ta n c e R ds on : R Ds (on) = 0 .0 4 5 f i (ty p .) Unit: mm • H igh sw itch in g r a te : t f = 180ns (ty p .) • N o se c o n d a ry b reak d o w n
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2SK1033
045ft
180ns
b132fl52
2SK1033
25C1
2SK103
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2SK2574
Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
Text: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative
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2SK1868
-220F
2SK1255
O-220E
2SK2578
2SK2579
2SK1967
2SK2659
2SK1033
2SK2574
2SK2574
2SK1259
2SK2377
2SK2659
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2SK1033
Abstract: 813S 55-H150 H150
Text: Power F-MOS FET 2SK1033 2SK1033 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON re s is ta n c e R ds on : R Ds (on) = 0 .0 4 5 ft (typ.) Unit: mm • High sw itching ra te : tf = 180ns (typ.) 10. 2 r • No seco n d ary break d o w n
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2SK1033
180ns
2SK1033
813S
55-H150
H150
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45W2
Abstract: 2SK1033
Text: P ow er F-MOS FET 2SK1033 2SK1033 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low O N re s is ta n c e R DS on : RDS (on) = 0 .0 4 5 ft (ty p .) Unit: mm • H igh sw itch in g r a te : tf = 180ns (ty p .) • N o se c o n d a ry b reak d o w n
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2SK1033
045ii
180ns
45W2
2SK1033
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an6512n
Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.
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MN115P
MN116P
MN1201A
MN1201M
MN1201S
MN1202M
MN1204A
MN1204B
MN1204E
MN1204F
an6512n
mn1225
MN1280
mn6520
MN6130
MN6147C
MN12C261D
MN12C201D
MN3107
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OF03
Abstract: 2SK1263 2SK2377
Text: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128
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A2SK2277
2SK2014
2SK2047
2SK1834
220Fro
2SK1980
A2SK2128
A2SK2125
2SK1833
2SK2509
OF03
2SK1263
2SK2377
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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MN1280
Abstract: AN6512 MN15814 MN15245 2Sb1163a mn158413 AN7210 AN7226 MN15287 MN15283
Text: pes H Maintenance • mos LS Is Type No. Alternative ^ype No. Alternative Type No. - MN6040Z — - MN6049 — MN3726FE/AE MN4520B/S MN4521 B/S - — MN3726AE MN4522B/S - MN6063 MN6063A - MN4526B/S - MN6064 - - MN4528B/S — - MN4532B/S — MN6064R/S MN61074
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MN1380
MN13801
MN13802
MN1381
MN13811
MN13812
MN1382
MN13821
MN13822
MN1544
MN1280
AN6512
MN15814
MN15245
2Sb1163a
mn158413
AN7210
AN7226
MN15287
MN15283
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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2sk2015
Abstract: 2SK2277 2SK2377 2SK1635 2SK2014 2SK2016 2SK1257 2sk1259 2SK1262 2SK2276
Text: Field Effect Transistors • Silicon MOS FETs # For Medium-Output Electrical Characteristics Ta = 2 5 °C Absolute Maximum Ratings (Ta = 2 5 °C) Type No. Application Pch 2SJ0398 2SK2014 2SK2015 Switching Nch 2SK2016 A2SK2211 A2SK2276 A2SK2277 A2SK2342 *1 0 = 2 5 ^
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2SJ0398
2SK2014
2SK2015
2SK2016
A2SK2211
A2SK2276
A2SK2277
A2SK2342
2SK1262
O-220F
2SK2277
2SK2377
2SK1635
2SK1257
2sk1259
2SK2276
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2SK2277
Abstract: 2SK2580 220E4 2SK2015 2SK2014
Text: FET, IGBT, IPD • Power F-MOS FETs Line-up Vgs =10V ÎV dss \ (V) 60 80 100 150 170 250 450 500 550 800 900 (A) \ 1 2SK2277 Mini-Powerl .0 2SK2014 UTypei.O ★2SK2047 I Type b.o (Id =1.2A) 2SK2538 220Fz.o ★2SK1834 220Fro ★2SK1980 N Type 7.0 ★ A2SK2128
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2SK2277
2SK2014
2SK2047
2SK2538
220Fz
2SK1834
220Fro
2SK1980
A2SK2128
220E-0
2SK2580
220E4
2SK2015
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2SK1011
Abstract: 2sk1029 2SK1026 2SK1025 2SK1016 2SK1010 2SK1015 2sk1018 2SK1032 2SK1006
Text: f € m. % tt m € m m % it ü 3: * V* * K V * (V) ft fé i* (A) ^ *» X P d /P c h ft * (W) I gss (max) (A) Vg s (V) W Id s (min) (max) V d s (A) (V) (A) ft (Ta=25°C) 14 g (min) (max) V d s (V) (V) (V) (min) (S) Id (A) Vds (V) Id (A) SW-Reg, USP, DDC
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2SK1006
2SK1007
500/i
2SK1008
2SK1009
2SK1010
2SK1026
160ns.
280nstyp
2SK1027
2SK1011
2sk1029
2SK1026
2SK1025
2SK1016
2SK1015
2sk1018
2SK1032
2SK1006
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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K614
Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Text: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)
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2SK662
2SK1103
2SJ163
2SK198
2SK374
2SK123
2SK1216
2SK1842
2SJ164
2SK301
K614
K 1833
2SK 129 A
gn1015
2SK1257 equivalent
2SK1962
2sk 170 Pin
GN1021
IC STK411-220E CIRCUIT
K996
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