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    2SK1058 MOSFET Search Results

    2SK1058 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1058-E Renesas Electronics Corporation N Channel MOSFET, TO-3P, /Tube Visit Renesas Electronics Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    2SK1058 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1058 MOSFET APPLICATION NOTES

    Abstract: BD139 heat sink lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 2SK1058 specification of 2SK1058 LM4702 BJT BD139 BJT small signal low power BD139 transistor 2sj162
    Text: Introduction How To Choose A MOSFET This application note provides supporting design information regarding National Semiconductor’s newest offering of highperformance, ultra high-fidelity audio amplifier driver ICs. The LM4702 and its derivatives provide a highly reliable, fully


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    PDF LM4702 AN-1645 2SK1058 MOSFET APPLICATION NOTES BD139 heat sink lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 2SK1058 specification of 2SK1058 BJT BD139 BJT small signal low power BD139 transistor 2sj162

    Audio Power Amplifier MOSFET TOSHIBA

    Abstract: LM4072 2sk1058 2SJ162 100w mosfet audio power amplifier lm4702 OUTPUT STAGE INFORMATION AN1645 BD149 AN-1645 IRFP240 BJT BD139
    Text: ெࡔࡔॆӷ‫ິࠅ༹ڞ‬ ᆌᆩጀ๥1645 Troy Huebner 2007౎5ሆ ᆅჾ සࢆ჋ስMOSFET !!!!Ԩᆌᆩጀ๥༵ࠃକ࠲ᇀெࡔࡔॆӷ‫༹ڞ‬ፌႎ‫ߛڦ‬Ⴀ āāLM4702‫ڦ‬༬Ⴀ၌዆କ‫ܔ‬MOSFETഗॲ‫ڦ‬჋ስăፌዘ ీĂ‫ߛג‬ԍኈ‫ڦ‬ᅼೕ‫ٷݣ‬ഗൻ‫ۯ‬IC‫ڦ‬ยऺኧ‫׼‬႑တă


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    PDF LM4702 100mA 25W/8 LM4072 Audio Power Amplifier MOSFET TOSHIBA LM4072 2sk1058 2SJ162 100w mosfet audio power amplifier lm4702 OUTPUT STAGE INFORMATION AN1645 BD149 AN-1645 IRFP240 BJT BD139

    hitachi mosfet audio

    Abstract: D4L DIODE 2SK2830 2SK2225 2SJ214LS 2SK1919LS 2sk2829 Hitachi MOSFET 2SK1058 transistors 2SK1317
    Text: Power MOSFET Quick Reference Literature Order Number Revision Number Hitachi Semiconductor Author Name When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole


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    PDF O-220 HAF2001 500pcsxN) O-92MOD O-126MOD O-126FM O-220AB O-220FM O-220C SP-10 hitachi mosfet audio D4L DIODE 2SK2830 2SK2225 2SJ214LS 2SK1919LS 2sk2829 Hitachi MOSFET 2SK1058 transistors 2SK1317

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


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    PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    LM49830

    Abstract: 150w audio amplifier circuit diagram class AB 2sk1058 2SJ162 LME49830 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM lm4702 OUTPUT STAGE INFORMATION AN-1850 transistor 2sj162 450w power supply schematic diagram AN1645
    Text: National Semiconductor Application Note 1850 Troy Huebner John DeCelles July 1, 2008 Introduction validate the solution’s sonic performance in the desired test environment. The solution presented has undergone listening evaluations in a dedicated sound room for verification of sonic


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    PDF LME49830 EF125WT1 AN-1850 LM49830 150w audio amplifier circuit diagram class AB 2sk1058 2SJ162 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM lm4702 OUTPUT STAGE INFORMATION AN-1850 transistor 2sj162 450w power supply schematic diagram AN1645

    LM49830

    Abstract: Audio Power Amplifier MOSFET TOSHIBA high power fet audio amplifier schematic 300w power amplifier circuit diagram 150w audio amplifier circuit diagram class AB lm4702 OUTPUT STAGE INFORMATION lme49830 2sk1058 2SJ162 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM 300w mosfet audio amplifier circuit diagram
    Text: National Semiconductor Application Note 1850 Troy Huebner John DeCelles December 2, 2008 Introduction validate the solution’s sonic performance in the desired test environment. The solution presented has undergone listening evaluations in a dedicated sound room for verification of sonic


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    PDF LME49830 EF125WT1 AN-1850 LM49830 Audio Power Amplifier MOSFET TOSHIBA high power fet audio amplifier schematic 300w power amplifier circuit diagram 150w audio amplifier circuit diagram class AB lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM 300w mosfet audio amplifier circuit diagram

    LME49830

    Abstract: an1850 150W TRANSISTOR AUDIO AMPLIFIER LM49830 AN-1850 SNAA058B
    Text: Application Report SNAA058B – July 2008 – Revised May 2013 AN-1850 LME49830TB Ultra-High Fidelity High Power Amplifier Reference Design .


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    PDF SNAA058B AN-1850 LME49830TB LME49830 an1850 150W TRANSISTOR AUDIO AMPLIFIER LM49830 SNAA058B

    EF125WT1

    Abstract: AN-1850 LME49830 ic 062c 2sk1058 2SJ162 062C AN1850 LME49830TB 39000UF 10WRL
    Text: 美国国家半导体公司 应用注释1850 Troy Huebner John DeCelles 2008年7月1日 引言 LME49830 EF125WT1放大器的印刷电路板模块展示了 也能在所需的测试环境里验证方案的音响性能。为验证音响性 美国国家半导体公司生产的LME极高保真功率放大器输入级


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    PDF LME49830 EF125WT1 LME49830 mA200V LME498301kW LME49830MOS 16VLME49830 EF125WT1 AN-1850 ic 062c 2sk1058 2SJ162 062C AN1850 LME49830TB 39000UF 10WRL

    2SK2225

    Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
    Text: CONTENTS • Index. 4 ■ General Information.


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    PDF PM50150K 31Max 2SK2225 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


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    PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    PA0016

    Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
    Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30


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    PDF 14-dagar PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    2SJ56 2sk176

    Abstract: 2sJ50 mosfet Hitachi 2sk176 2sj56 2SK176 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SJ56 2SJ56 HITACHI 2SK1058 MOSFET
    Text: HITACHI 5 1.4 S-Series for Power Amplifiers output stages can easily be designed just by connecting extra power MOSFETs in parallel. This flexibility arises from th e p o sitiv e temperature coefficient of the pow er MOSFET, which gives the transistor the ability to share


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    PDF 2SK176 2SJ56 2SK220 2SK221 2SK258 2SK259 2SK260 2SK1056 2SJ56 2sk176 2sJ50 mosfet Hitachi 2sk176 2sj56 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SJ56 HITACHI 2SK1058 MOSFET

    HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

    Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
    Text: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED


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    PDF BUZ905D BUZ906D -100mA -160V -200V HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


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    PDF O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


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    PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212