MA196
Abstract: "cathode indication"
Text: 2SK1255 Switching Diodes MA196 Silicon epitaxial planer type Unit : mm For switching circuits f0.45 max. Small capacity between pins, Ct 1st Band 2nd Band • Absolute Maximum Ratings Ta= 25˚C Symbol Rating Unit Forward voltage (DC) VR 50 Repetitive peak reverse voltage
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2SK1255
MA196
DO-34
cur03
30MHz
MA196
"cathode indication"
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Untitled
Abstract: No abstract text available
Text: 2SK1255 Switching Diodes MA3X200F Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 2 0.1 to 0.3 0.4±0.2 Rating Symbol Unit Reverse voltage DC VR 80 V Peak reverse voltage VRM 80 V Forward current (DC)
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2SK1255
MA3X200F
100ns)
100mA
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Untitled
Abstract: No abstract text available
Text: 2SK1255 Switching Diodes MA142WK Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 0.425 1.25±0.1 0.425 high-density mounting Small capacity between pins, Ct 2 • Absolute Maximum Ratings Ta= 25˚C Parameter Symbol Rating Unit Reverse voltage (DC)
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2SK1255
MA142WK
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M2D Package
Abstract: M2D marking "Switching diode" 6pin 2SK125
Text: 2SK1255 Switching Diodes MA6S121 Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 1.25±0.1 • Features 2.0±0.1 0.65 0.65 ● Small S-Mini type 6-pin package ● Three-element incorporated, enabling high-density mounting ● Flat lead type, with improved mounting efficiency and solderability
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2SK1255
MA6S121
100mA
M2D Package
M2D marking
"Switching diode" 6pin
2SK125
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Untitled
Abstract: No abstract text available
Text: 2SK1255 Power F-MOS FETs 2SK1255 Silicon N-Channel Power F-MOS Unit : mm ON-resistance RDS on : R DS(on)1= 0.135Ω(typ) 2.7±0.2 switching : tf= 53ns(typ) secondary breakdown ● Low-voltage 16.7±0.3 ● No 5.5±0.2 drive 4.2±0.2 ● High-speed 4.2±0.2
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2SK1255
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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ON3105
Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Text: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S
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MN1001
MN1020215
MN1020407
MN1020415
MN1020715
MN102LF53G
MN1040
MN110
MN1101
MN115
ON3105
2sd2603
mn4117405
2sc901b
mn6520
MN1280
mn1225
MN6147C
2SC5573
GN2013
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2SK2574
Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
Text: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative
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2SK1868
-220F
2SK1255
O-220E
2SK2578
2SK2579
2SK1967
2SK2659
2SK1033
2SK2574
2SK2574
2SK1259
2SK2377
2SK2659
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2SK1255
Abstract: 2SK125
Text: Power F-MOS FET 2SK1255 2SK1255 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • L ow ON re s is ta n c e R DS on : R DS (on) 1 = 0 .1 3 5 A (ty p .) Unit: mm • H igh sw itch in g r a te : t ( = 5 3 n s (ty p .) • No se c o n d a ry b reak d o w n
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2SK1255
2SK1255
2SK125
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2SK1255
Abstract: No abstract text available
Text: Power F-MOS FET 2SK1255 2SK1255 Silicon N-channel Power F-MOS FET • Package Dim ensions ■ Features • L ow ON r e s is ta n c e R DS on : RDS (on) l = 0 .1 3 5 il (ty p .) Unit: mm • High sw itc h in g r a te : t ( = 5 3 n s (ty p .) • N o s e c o n d a ry b reak d o w n
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2SK1255
135ft
VOO-30V
2SK1255
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2SK996
Abstract: No abstract text available
Text: • Power F-MOS FET Package Package No. ! Type (D44) N Type (D42) 2SK1967 TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (D67) V dss V gss Id (V) (V) (A) RciS'On; V is ton tf td(o«) max. typ. (S) typ. (ns) typ. (ns) typ. (ns) 0.2 4.0 29 53 97 7.1 46
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2SK1868
O-220F
2SK1255
2SK1256
2SK1967
2SK1033
2SK1257
O-220E
2SK2578
2SK2579
2SK996
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8893 single chip tv processor
Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741
Text: Application Block Diagrams • Video Applications VC R System Remote Control Transmission MN171608/9 MN15*13 LN66A I Display I Cylinder Motor Drive AN3813/14/15 f FL Dr MN12510 Capstan Motor Drive AN3840N V r I Remote Control Reception}] MN6750*8/9/6755—7
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MN171608/9
LN66A
MN12510
AN3813/14/15
AN3840N
PNA4601M
MN187*
MN6750*
AN3126/29
AN5179/82N
8893 single chip tv processor
transistor tt 2170 em
AN7156N
an8294nsb
Color TV circuit 8893
AN8782SB
mn150832
mip160
mn662741
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LM 739 N
Abstract: 2SK722 2SK734 2SK733 2SK712 2SK715 2SK732 2SK743 2SK708 2sk719
Text: - 64 - H f ï m s tt € ffl £ m £ À Y . * 1 Hi K V $ fé S P d /P c h * (V) 9f * (A) ft (W) Ig s s (max) (A) Vg s (V) W n (min) (max) Vd s (A) (A) (V) 14 <Ta=25t3) (min) (max) Vd s (V) (V) (V) (min) Vd s (S) (,< sf (V) Id (A) Id (A) 2SK705 NEC
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2SK705
2SK707
2SK708
2SK709
2SK710
200ni
2SK711
160ns,
250nstyp
2SK734
LM 739 N
2SK722
2SK734
2SK733
2SK712
2SK715
2SK732
2SK743
2sk719
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OF03
Abstract: 2SK1263 2SK2377
Text: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128
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A2SK2277
2SK2014
2SK2047
2SK1834
220Fro
2SK1980
A2SK2128
A2SK2125
2SK1833
2SK2509
OF03
2SK1263
2SK2377
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2SK1248
Abstract: 2SK1257 2SK124 2SK1250 2SK1241 2SK1249 2sk1259 2SK1243 2SK1244 2SK1245
Text: - 92 - f m. % *± « ffl m E mmi A £ V* h ft* E ft K V * (V) fé I* !xl X ft (A) P d /P c h (W) I g SS (max) (A) Vg s (V) (min) (A) «I (max) V d s (A) (V) 'te & (Ta=25tî) (min) (max) V d s (V) (V) (V) gm (min) (tys) V d s (S) (V) (S) Id (A) 2SK1241
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2SK1241
ZSK1242
2SK1243
-10/i
2SK1244
2SK1245
2SK12230
130ns
190nstyp
2SK1262
2SK1248
2SK1257
2SK124
2SK1250
2SK1241
2SK1249
2sk1259
2SK1244
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MN1280
Abstract: AN6512 MN15814 MN15245 2Sb1163a mn158413 AN7210 AN7226 MN15287 MN15283
Text: pes H Maintenance • mos LS Is Type No. Alternative ^ype No. Alternative Type No. - MN6040Z — - MN6049 — MN3726FE/AE MN4520B/S MN4521 B/S - — MN3726AE MN4522B/S - MN6063 MN6063A - MN4526B/S - MN6064 - - MN4528B/S — - MN4532B/S — MN6064R/S MN61074
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MN1380
MN13801
MN13802
MN1381
MN13811
MN13812
MN1382
MN13821
MN13822
MN1544
MN1280
AN6512
MN15814
MN15245
2Sb1163a
mn158413
AN7210
AN7226
MN15287
MN15283
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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2sk2015
Abstract: 2SK2277 2SK2377 2SK1635 2SK2014 2SK2016 2SK1257 2sk1259 2SK1262 2SK2276
Text: Field Effect Transistors • Silicon MOS FETs # For Medium-Output Electrical Characteristics Ta = 2 5 °C Absolute Maximum Ratings (Ta = 2 5 °C) Type No. Application Pch 2SJ0398 2SK2014 2SK2015 Switching Nch 2SK2016 A2SK2211 A2SK2276 A2SK2277 A2SK2342 *1 0 = 2 5 ^
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2SJ0398
2SK2014
2SK2015
2SK2016
A2SK2211
A2SK2276
A2SK2277
A2SK2342
2SK1262
O-220F
2SK2277
2SK2377
2SK1635
2SK1257
2sk1259
2SK2276
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2SK2277
Abstract: 2SK2580 220E4 2SK2015 2SK2014
Text: FET, IGBT, IPD • Power F-MOS FETs Line-up Vgs =10V ÎV dss \ (V) 60 80 100 150 170 250 450 500 550 800 900 (A) \ 1 2SK2277 Mini-Powerl .0 2SK2014 UTypei.O ★2SK2047 I Type b.o (Id =1.2A) 2SK2538 220Fz.o ★2SK1834 220Fro ★2SK1980 N Type 7.0 ★ A2SK2128
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2SK2277
2SK2014
2SK2047
2SK2538
220Fz
2SK1834
220Fro
2SK1980
A2SK2128
220E-0
2SK2580
220E4
2SK2015
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K614
Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Text: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)
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2SK662
2SK1103
2SJ163
2SK198
2SK374
2SK123
2SK1216
2SK1842
2SJ164
2SK301
K614
K 1833
2SK 129 A
gn1015
2SK1257 equivalent
2SK1962
2sk 170 Pin
GN1021
IC STK411-220E CIRCUIT
K996
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