K1529
Abstract: 2SK1529 2SJ200 Toshiba 2SJ
Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)
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2SK1529
2SJ200
K1529
K1529
2SK1529
2SJ200
Toshiba 2SJ
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Untitled
Abstract: No abstract text available
Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Tc = 25°C)
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2SK1529
2SJ200
2-16C1B
K1529
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k1529
Abstract: 2SJ200 2SK1529 toshiba pb includes toshiba 2-16c1b
Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)
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2SK1529
2SJ200
k1529
2SJ200
2SK1529
toshiba pb includes
toshiba 2-16c1b
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2SK1529
Abstract: K1529 2SJ200
Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)
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2SK1529
2SJ200
2SK1529
K1529
2SJ200
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2SK1529
Abstract: Toshiba 2SJ
Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)
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2SK1529
2SJ200
2SK1529
Toshiba 2SJ
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2SK1529
Abstract: 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b
Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)
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2SK1529
2SJ200
2SK1529
2SJ200
K1529
SC-65
toshiba pb includes
toshiba 2-16c1b
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K1529
Abstract: 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ
Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)
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2SK1529
2SJ200
K1529
K1529
2sk1529 2sj200
2SJ200
2SK1529
Toshiba 2SJ
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K1529
Abstract: 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200
Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 180V l High forward transfer admittance : |Yfs| = 4.0 S typ. l Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)
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2SK1529
2SJ200
K1529
K1529
2SJ200
2SK1529
Toshiba 2SJ
2sk1529 2sj200
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2sj200
Abstract: 2SK1529 Toshiba 2SJ
Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = −180 V l High forward transfer admittance : |Yfs| = 4.0 S typ. l Complementary to 2SK1529 Maximum Ratings (Ta = 25°C)
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2SJ200
2SK1529
2-16C1B
2sj200
2SK1529
Toshiba 2SJ
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2SJ200
Abstract: 2sk1529/2sj200
Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SK1529 Maximum Ratings (Tc = 25°C)
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2SJ200
2SK1529
2-16C1B
2SJ200
2sk1529/2sj200
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2SJ200
Abstract: 2SK1529
Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)
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2SJ200
2SK1529
2-16C1B
2SJ200
2SK1529
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2SJ200
Abstract: 2sk1529 2sj200 Toshiba 2SJ
Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)
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2SJ200
2SK1529
2-16C1B
2SJ200
2sk1529 2sj200
Toshiba 2SJ
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2SJ200
Abstract: 2SJ20
Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SK1529 Maximum Ratings (Ta = 25°C)
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2SJ200
2SK1529
2-16C1B
2SJ200
2SJ20
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2SJ200
Abstract: 2SK1529 transistor application Toshiba 2SJ
Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)
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2SJ200
2SK1529
2-16C1B
2SJ200
2SK1529
transistor application
Toshiba 2SJ
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK1529 Field Effect Transistor Silicon N Channel MOSType ji-MOS II High Power Amplifier Application F e a tu re s • High Breakdown Voltage - VDSS = 180V (Min.) • High Forward Transfer Admittance - |Yfe I = 4.0S (Typ.)
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2SK1529
2SJ200
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c 111 transistor
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1529 SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 15.9MAX . High Breakdown Voltage 03.2±O.2 : Vj ss“180V MIN.) 7 . High Forward Transfer Admittance : | Yfs | “4.OS (TYP.) . Complementary to 2SJ200
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2SK1529
2SJ200
Ta-25
Tcm25
SC-65
2-16C1B
c 111 transistor
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2SJ200
Abstract: 6C1B
Text: I 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage X5.9MAX 03.2 ±0.2 : V jjss “"180V MIN. . High Forward Transfer Admittance : | Yfs | “4.OS (TYP.) r . . Complementary to 2SK1529
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2SJ200
2SK1529
2SJ200
6C1B
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1529 SILICON N CHANNEL MOS TYPE High Breakdown Voltage : Vj3gg = 180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ. Complementary to 2SJ200 1 5 .9 M A X . 3.3MAX. . , 2.0 • • • INDUSTRIAL APPLICATIONS Unit in mm M A X IM U M RATINGS (Ta = 25°C)
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2SK1529
2SJ200
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SJ200 Field Effect Transistor Silicon P Channel MOS Type rc-MOS II Audio Frequency Power Amplifier Application Features • High Breakdown Voltage - VDSS = -180V (Min.) • High Forward Transfer Admittance - Y fs ' = 4 . O S (T y p .) • Complementary to 2SK1529
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2SJ200
-180V
2SK1529
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2SK1529
Abstract: No abstract text available
Text: TO SHIBA 2SK1529 Field Effect Transistor Unit in m m 15.9 MAX Silicon N Channel MOS Type rc-MOS II # 3 .2 ±0.2 High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 180V (Min.) • High Forward Transfer Adm ittance - "Yfs = 4.OS (Typ.)
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2SK1529
2SJ200
SC-65
2SK1529
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PDF
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toshiba j200
Abstract: No abstract text available
Text: T O SH IB A 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 SJ 2QQ Unit in mm HIGH POWER AMPLIFIER APPLICATION 1 5.9 MAX. High Breakdown Voltage : V j}ss= —180V High Forward Transfer Admittance : |Yfg| = 4.0S Typ. Complementary to 2SK1529
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2SJ200
toshiba j200
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TRANSISTOR bH-10
Abstract: marking BH-10 2SJ200 2SK1529 SC-65
Text: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs|= 4 .0 S Typ. • Complementary to 2SK1529
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2SJ200
2SK1529
SC-65
2-16C1B
TRANSISTOR bH-10
marking BH-10
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PDF
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k1529
Abstract: 2SJ200 2SK1529 SC-65
Text: TO SH IBA 2SK1529 SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH POWER AMPLIFIER APPLICATION High Breakdown Voltage : V d SS = 180 V High Forward Transfer Admittance : |Yfs| = 4.0 S Typ. Complementary to 2SJ200 1 5.9 M A X . O X I 1" - . CO o +1 . o f
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2SK1529
2SJ200
k1529
2SK1529
SC-65
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ200 TO S H IB A FIELD EFFECT TRANSISTOR SILICON P CHANN EL MOS TYPE 2SJ200 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • 1 5 .9 M A X . High Breakdown Voltage : V j gg= —180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ.) Complementary to 2SK1529
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OCR Scan
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2SJ200
--180V
2SK1529
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