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    2SK278 Search Results

    2SK278 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2788VYTR-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 2A 160Mohm Upak/Sc-62 Visit Renesas Electronics Corporation
    SF Impression Pixel

    2SK278 Price and Stock

    Rochester Electronics LLC 2SK2788VYWS-E

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey 2SK2788VYWS-E Bulk 682
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    Renesas Electronics Corporation 2SK2788VYTR-E

    POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, SILICON
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    Quest Components 2SK2788VYTR-E 2,481
    • 1 $1.92
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    2SK2788VYTR-E 800
    • 1 $2.304
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    Win Source Electronics 2SK2788VYTR-E 3,184
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    Toshiba America Electronic Components 2SK2789

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    Quest Components 2SK2789 645
    • 1 $1.75
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    • 1000 $0.7
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    Hitachi Ltd 2SK2788VYTR

    2A, 60V, 0.25OHM, N-CHANNEL, SI, POWER, MOSFET
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    Quest Components 2SK2788VYTR 88
    • 1 $1.5
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    Renesas Electronics Corporation 2SK2788VYWS-E

    2SK2788 - Small Signal Field-Effect Transistor, 2A, 60V, N-Channel MOSFET '
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    Rochester Electronics 2SK2788VYWS-E 682 1
    • 1 $0.4622
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    • 100 $0.4345
    • 1000 $0.3929
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    2SK278 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK278 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK278 Unknown FET Data Book Scan PDF
    2SK2782 Toshiba FETs Nch 30V Original PDF
    2SK2782 Toshiba Original PDF
    2SK2782 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2782 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2782 Toshiba Field Effect Transistor Silicon N Channel MOS Type (Power (L, 2)-Pi-MOS V) Scan PDF
    2SK2782 Toshiba Silicon N channel MOS type field effect transistor for high speed, high current switching, DC-DC converter and chopper regulator applications Scan PDF
    2SK2787LS Sanyo Semiconductor Large Signal Power MOSFET Scan PDF
    2SK2788 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2788 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2788 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2788VYTL-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2788VYTR-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2789 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2789 Toshiba Original PDF
    2SK2789 Toshiba N-Channel MOSFET Original PDF
    2SK2789 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2789 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
    2SK2789 Toshiba Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications Scan PDF

    2SK278 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K2789

    Abstract: 2SK2789 VTCH
    Text: 2SK2789 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅤ 2SK2789 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ 単位: mm z 4V 駆動です。 : RDS (ON) = 66 mΩ (標準) z オン抵抗が低い。


    Original     		PDF 2SK2789 10VID 2-10S1B VDD80 K2789 K2789 2SK2789 VTCH

    2SK2787LS

    Abstract: 2sk2787
    Text: 2SK2787LS Ordering number : ENA0990 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2787LS General-Purpose Switching Device Applications Features • • High-speed diode. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF 2SK2787LS ENA0990 A0990-3/3 2SK2787LS 2sk2787

    K2782

    Abstract: 2SK2782 K278
    Text: 2SK2782 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type L −π−MOSV 2SK2782 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.039 Ω (typ.) z High forward transfer admittance


    Original     		PDF 2SK2782 K2782 2SK2782 K278

    2sk2782

    Abstract: No abstract text available
    Text: 2SK2782 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type L −π−MOSV 2SK2782 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.039 Ω (typ.) z High forward transfer admittance


    Original     		PDF 2SK2782 2sk2782

    2SK2788

    Abstract: 2SK2788VYTL-E 2SK2788VYTR-E
    Text: Preliminary Datasheet 2SK2788 R07DS0511EJ0300 Previous: REJ03G1033-0200 Rev.3.00 Jul 27, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12  typ (VGS = 10 V, ID = 1 A)  Low drive current  High speed switching


    Original     		PDF 2SK2788 R07DS0511EJ0300 REJ03G1033-0200) PLZZ0004CA-A 2SK2788 2SK2788VYTL-E 2SK2788VYTR-E

    K2789

    Abstract: 2SK2789
    Text: 2SK2789 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2789 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.) z High forward transfer admittance


    Original     		PDF 2SK2789 K2789 2SK2789

    2sk2789

    Abstract: No abstract text available
    Text: 2SK2789 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2789 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.) High forward transfer admittance


    Original     		PDF 2SK2789 25transportation 2sk2789

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st. Edition Features • Low on-resistance RDS on = 0.12Ω typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline 2SK2788 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK2788 ADE-208-538 Hitachi DSA002780

    Hitachi DSA002729

    Abstract: No abstract text available
    Text: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 Z 1st. Edition May 1997 Features • Low on-resistance RDS(on) = 0.12Ω typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline


    Original     		PDF 2SK2788 ADE-208-538 D-85622 Hitachi DSA002729

    K2789

    Abstract: 2SK2789 working of voltage regulator
    Text: 2SK2789 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2789 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.) High forward transfer admittance


    Original     		PDF 2SK2789 K2789 2SK2789 working of voltage regulator

    k2782

    Abstract: 2SK2782 Product type marking code 039
    Text: 2SK2782 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2782 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.039 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SK2782 k2782 2SK2782 Product type marking code 039

    2SK2782

    Abstract: SC64
    Text: 2SK2782 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2782 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.039 Ω (typ.) l High forward transfer admittance


    Original     		PDF 2SK2782 2SK2782 SC64

    Untitled

    Abstract: No abstract text available
    Text: 2SK278 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)7.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)


    Original     		PDF 2SK278

    k2782

    Abstract: 2SK2782 K278
    Text: 2SK2782 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type L −π−MOSV 2SK2782 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 0.6 MAX : RDS (ON) = 0.039 Ω (typ.) z High forward transfer admittance


    Original     		PDF 2SK2782 k2782 2SK2782 K278

    2SK2782

    Abstract: 20KU
    Text: TO SHIBA 2SK2782 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2782 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 4V Gate Drive


    OCR Scan     		PDF 2SK2782 530/aH, 2SK2782 20KU

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2782 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2SK2782 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2782 039il 100/j

    2SK2786

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <FIELD-EFFECT TRANSISTOR 2SK2786 ^ FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SK2786 is a silicon N channel ¡unction type FET. It is especially OUTLINE DRAWING 4 .3 M A X designed for low frequency low noise amplify application.


    OCR Scan     		PDF 2SK2786 2SK2786 100Hz) 70Qtyp

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2782 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE L^ tt-M O S V 2SK2782 HIGH SPEED. HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : RdS ( O N ) -Û039O (Typ.)


    OCR Scan     		PDF 2SK2782 IDR--20A,

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2782 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2782 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 4 V Gate Drive


    OCR Scan     		PDF 2SK2782

    Untitled

    Abstract: No abstract text available
    Text: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-538 Z 1st. Edition May 1997 Features • Low on-resistance RDS(o]i) = 0.12D typ (VGS = 10 V, ID= 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline


    OCR Scan     		PDF 2SK2788 ADE-208-538 D-85622

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2789 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE L^jr-MOSV 2SK2789 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm TO- 220 F L CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


    OCR Scan     		PDF 2SK2789

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SK2789 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2SK2789 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm TO-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


    OCR Scan     		PDF 2SK2789 O-220FL 100//A 20kfi)

    L428

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2789 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O SV 2SK2789 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm T0-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


    OCR Scan     		PDF 2SK2789 T0-220FL 100/iA 20kil) 428//H L428

    2SK2789

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2789 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2789 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m TO-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10.3MAX.


    OCR Scan     		PDF 2SK2789 to-22qfl