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    2SK2788 Search Results

    2SK2788 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2788VYTR-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 2A 160Mohm Upak/Sc-62 Visit Renesas Electronics Corporation
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    2SK2788 Price and Stock

    Rochester Electronics LLC 2SK2788VYWS-E

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey 2SK2788VYWS-E Bulk 682
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    Renesas Electronics Corporation 2SK2788VYTR-E

    POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, SILICON
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    Quest Components 2SK2788VYTR-E 2,481
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    2SK2788VYTR-E 800
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    Win Source Electronics 2SK2788VYTR-E 3,184
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    Hitachi Ltd 2SK2788VYTR

    2A, 60V, 0.25OHM, N-CHANNEL, SI, POWER, MOSFET
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    Quest Components 2SK2788VYTR 88
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    Renesas Electronics Corporation 2SK2788VYWS-E

    2SK2788 - Small Signal Field-Effect Transistor, 2A, 60V, N-Channel MOSFET '
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    Rochester Electronics 2SK2788VYWS-E 682 1
    • 1 $0.4622
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    2SK2788 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2788 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2788 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2788 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2788VYTL-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2788VYTR-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF

    2SK2788 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2788

    Abstract: 2SK2788VYTL-E 2SK2788VYTR-E
    Text: Preliminary Datasheet 2SK2788 R07DS0511EJ0300 Previous: REJ03G1033-0200 Rev.3.00 Jul 27, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12  typ (VGS = 10 V, ID = 1 A)  Low drive current  High speed switching


    Original     		PDF 2SK2788 R07DS0511EJ0300 REJ03G1033-0200) PLZZ0004CA-A 2SK2788 2SK2788VYTL-E 2SK2788VYTR-E

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st. Edition Features • Low on-resistance RDS on = 0.12Ω typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline 2SK2788 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK2788 ADE-208-538 Hitachi DSA002780

    Hitachi DSA002729

    Abstract: No abstract text available
    Text: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 Z 1st. Edition May 1997 Features • Low on-resistance RDS(on) = 0.12Ω typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline


    Original     		PDF 2SK2788 ADE-208-538 D-85622 Hitachi DSA002729

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SK2788 R07DS0511EJ0300 Previous: REJ03G1033-0200 Rev.3.00 Jul 27, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12  typ (VGS = 10 V, ID = 1 A)  Low drive current  High speed switching


    Original     		PDF 2SK2788 R07DS0511EJ0300 REJ03G1033-0200) PLZZ0004CA-A

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 Z 1st. Edition Jun 1997 Features • Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline


    Original     		PDF 2SK2788 ADE-208-538 D-85622 Hitachi DSA00276

    2SK2788VYTR-E

    Abstract: 2SK2788 2SK2788VYTL-E
    Text: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching REJ03G1033-0200 Previous: ADE-208-538 Rev.2.00 Sep.07,2005 Features • Low on-resistance RDS(on) = 0.12 Ω typ (VGS = 10 V, ID = 1 A) • Low drive current • High speed switching • 4 V gate drive devices.


    Original     		PDF 2SK2788 REJ03G1033-0200 ADE-208-538) PLZZ0004CA-A 2SK2788VYTR-E 2SK2788 2SK2788VYTL-E

    V1660

    Abstract: 2SK2788 Hitachi DSA00238
    Text: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st. Edition Features • Low on-resistance R DS on = 0.12Ω typ (VGS = 10 V, I D = 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline UPAK 3 2 1


    Original     		PDF 2SK2788 ADE-208-538 V1660 2SK2788 Hitachi DSA00238

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


    Original     		PDF HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original     		PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557

    TO220CFM

    Abstract: 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R
    Text: Power Mosfet 5th Generation The Performance Revolution Literature Order Number Revision Number 5/14/97 Hitachi Europe, Ltd. European Marketing Power Mosfet 5th Generation - The Performance Revolution 1.1 RDS ON 4.5m Ohm - A new standard has been set With the introduction of the new D5-Series HITACHI started a new age of RDS (ON)


    Original     		PDF 2SK2927* O-220 2SK2928* 2SK2929* 2SK2930* 2SK2931* TO220CFM 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    T3820BC-5

    Abstract: seiko matrix ccd 6 PIN BOARD CAMERA LAYOUT 8275 interfacing Hitachi DSAUTAZ006 8275 interfacing in microprocessor HA118104
    Text: APPLICATION NOTE Third-Generation Digital Camera Demonstration System MV-DS20 1st. Edition ADE-507-071 Z Preface Hitachi has produced digital-camera chip sets for use in hand-held video cameras, security cameras, image scanners for personal computers, and so forth. This application note describes the hardware


    Original     		PDF MV-DS20 MV-DS20) I-00137 E-28036 S-164 F-78148 T3820BC-5 seiko matrix ccd 6 PIN BOARD CAMERA LAYOUT 8275 interfacing Hitachi DSAUTAZ006 8275 interfacing in microprocessor HA118104

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    hitachi j50

    Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 hitachi j50 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent

    Untitled

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF D-85622

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    2SK2788

    Abstract: 2SK2788VYTL-E 2SK2788VYTR-E
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-538 Z 1st. Edition May 1997 Features • Low on-resistance RDS(o]i) = 0.12D typ (VGS = 10 V, ID= 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline


    OCR Scan     		PDF 2SK2788 ADE-208-538 D-85622

    Untitled

    Abstract: No abstract text available
    Text: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-538 1st. Edition Features • Low on-resistance R DSl m = 0.1251 typ (V GS = 10 V , ID = I A) • Low drive current • High speed switching • 4V gate drive devices. Outline UPAK


    OCR Scan     		PDF 2SK2788 ADE-208-538

    2SK975 equivalent

    Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC


    OCR Scan     		PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44

    transistor 2sk

    Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
    Text: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k


    OCR Scan     		PDF 2SD16 2SD1603 2SD1604 2SD1605 2SD1606 2SD1756 2SD1976 2SB1389 2SB1390 2SB1391 transistor 2sk transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796

    2SK2225 equivalent

    Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 Recommended products in each power range Recommended Products in Each Power Range Type power supply Voltage Up to 10 w 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 100 V to 132 V AC □ 2SK1151 {3.5}


    OCR Scan     		PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1156 2SK1313 2SK1314 2SK1540 2SK1541 2SK2225 equivalent 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent