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    2SK292 Search Results

    2SK292 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2925STR-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 10A 80Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    2SK2928-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 15A 52Mohm To-220Ab Visit Renesas Electronics Corporation
    2SK2926L-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 15A 55Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation
    2SK2927-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 10A 75Mohm To-220Ab Visit Renesas Electronics Corporation
    2SK2925L-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 10A 80Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation
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    2SK292 Price and Stock

    Renesas Electronics Corporation 2SK2925L06-E

    2SK2925L06-E
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    Verical 2SK2925L06-E 73,927 347
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    Rochester Electronics 2SK2925L06-E 73,927 1
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    Renesas Electronics Corporation 2SK2927-E

    Trans MOSFET N-CH Si 60V 10A 3-Pin(3+Tab) TO-220AB Tube
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    Verical 2SK2927-E 36 9
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    Chip1Stop 2SK2927-E Tube 36
    • 1 $2.92
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    Toshiba America Electronic Components 2SK2920

    PART NUMBER ONLY
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    Quest Components 2SK2920 1,910
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    Renesas Electronics Corporation 2SK2926STL

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    Quest Components 2SK2926STL 626
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    Renesas Electronics Corporation 2SK2926STL-E

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    Quest Components 2SK2926STL-E 108
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    Find more 2SK292 price and stock on Findchips.com

    2SK292 Datasheets (58)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK292 Unknown FET Data Book Scan PDF
    2SK2920 Toshiba FETs - Nch 150V Original PDF
    2SK2920 Toshiba Original PDF
    2SK2920 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2920 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2920 Toshiba Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V) Scan PDF
    2SK2920 Toshiba Silicon N-channel MOS type field effect transistor for high speed, high current switching, chopper regulator, DC-DC converter, motor drive applications Scan PDF
    2SK2922 Hitachi Semiconductor Silicon N Channel MOS FET UHF Power Amplifier Original PDF
    2SK2922 Renesas Technology Silicon N Channel MOS FET UHF Power Amplifier Original PDF
    2SK2923 Panasonic Silicon N-Channel Power F-MOS FET Original PDF
    2SK2924 Panasonic Silicon N-Channel Power F-MOS FET Original PDF
    2SK2925 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2925 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2925 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2925(L) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK2925L Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2925L Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2925(L) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2925L Renesas Technology High Speed Power Amplifier, 60V 10A 20W, MOS-FET N-Channel enhanced Original PDF
    2SK2925L Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF

    2SK292 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    8a smd

    Abstract: 2SK2926S
    Text: IC MOSFET SMD Type N-Channel Silicon MOSFET 2SK2926S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS =0.042 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1


    Original     		2SK2926S O-252 8a smd 2SK2926S PDF

    2SK2928

    Abstract: 15A60 Hitachi DSA00108
    Text: 2SK2928 Silicon N Channel MOS FET High Speed Power Switching ADE-208-551B Z 3rd. Edition Sep. 1997 Features • Low on-resistance R DS(on) = 0.040Ω typ. • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange


    Original     		2SK2928 ADE-208-551B 220AB 2SK2928 15A60 Hitachi DSA00108 PDF

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK2922 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-675 Z 1st. Edition Aug. 1998 Features • High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 57 %min. (f = 836.5MHz) • Compact package capable of surface mounting Outline


    Original     		2SK2922 ADE-208-675 31dBm, Hitachi DSA002749 PDF

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK2929 Silicon N Channel MOS FET High Speed Power Switching ADE-208-552 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2929 Absolute Maximum Ratings Ta = 25°C


    Original     		2SK2929 ADE-208-552 Hitachi DSA002780 PDF

    Hitachi DSA002758

    Abstract: 2SK2928
    Text: 2SK2928 Silicon N Channel MOS FET High Speed Power Switching ADE-208-551 Target Specification 1st. Edition Features • Low on-resistance R DS = 0.040 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2928 Absolute Maximum Ratings Ta = 25°C


    Original     		2SK2928 ADE-208-551 Hitachi DSA002758 2SK2928 PDF

    Hitachi DSA002758

    Abstract: No abstract text available
    Text: 2SK2925 L , 2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-549 Target Specification 1st. Edition Features • Low on-resistance R DS = 0.060 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline


    Original     		2SK2925 ADE-208-549 Hitachi DSA002758 PDF

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK2928 Silicon N Channel MOS FET High Speed Power Switching ADE-208-551 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.040 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2928 Absolute Maximum Ratings Ta = 25°C


    Original     		2SK2928 ADE-208-551 Hitachi DSA002780 PDF

    K2920

    Abstract: 2SK2920
    Text: 2SK2920 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSV 2SK2920 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 z High forward transfer admittance : |Yfs| = 4.5 S (typ.) 5.5 ± 0.2 : RDS (ON) = 0.56 Ω (typ.)


    Original     		2SK2920 K2920 2SK2920 PDF

    k2920

    Abstract: No abstract text available
    Text: 2SK2920 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2920 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) High forward transfer admittance


    Original     		2SK2920 k2920 PDF

    RENESAS 2SK2927-E TO-220AB

    Abstract: 2SK2927 2SK2927-E PRSS0004AC-A
    Text: 2SK2927 Silicon N Channel MOS FET High Speed Power Switching REJ03G1041-0600 Previous: ADE-208-550D Rev.6.00 Sep 07, 2005 Features • Low on-resistance RDS =0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		2SK2927 REJ03G1041-0600 ADE-208-550D) PRSS0004AC-A O-220AB) RENESAS 2SK2927-E TO-220AB 2SK2927 2SK2927-E PRSS0004AC-A PDF

    550D

    Abstract: 2SK2927 Hitachi DSA00238
    Text: 2SK2927 Silicon N Channel MOS FET High Speed Power Switching ADE-208-550D Z 5th. Edition Jun 1998 Features • Low on-resistance R DS =0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1


    Original     		2SK2927 ADE-208-550D 220AB 550D 2SK2927 Hitachi DSA00238 PDF

    k2920

    Abstract: 2SK2920
    Text: 2SK2920 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2920 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.56Ω (標準) z オン抵抗が低い。


    Original     		2SK2920 10VID SC-64 K2920 2002/95/EC) k2920 2SK2920 PDF

    K2920

    Abstract: 2SK2920
    Text: 2SK2920 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSV 2SK2920 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) High forward transfer admittance


    Original     		2SK2920 K2920 2SK2920 PDF

    mosfet vgs 5v 5a

    Abstract: 2SK2925S 5V GATE TO SOURCE VOLTAGE MOSFET
    Text: IC MOSFET SMD Type N-Channel Silicon MOSFET 2SK2925S Features Low on-resistance TO-252 typ. +0.15 6.50-0.15 +0.2 5.30-0.2 High speed switching +0.15 1.50-0.15 RDS =0.060 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max


    Original     		2SK2925S O-252 mosfet vgs 5v 5a 2SK2925S 5V GATE TO SOURCE VOLTAGE MOSFET PDF

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK2926 L , 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-535 (Z) 1st. Edition Jul. 1997 Features • Low on-resistance R DS(on) = 0.042Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK–2 4 4 D 1 2 3 G S


    Original     		2SK2926 ADE-208-535 D-85622 Hitachi DSA00276 PDF

    K2920

    Abstract: K292 2SK2920
    Text: 2SK2920 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSV 2SK2920 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance


    Original     		2SK2920 K2920 K292 2SK2920 PDF

    2SK2928

    Abstract: 2SK2928-E PRSS0004AC-A
    Text: 2SK2928 Silicon N Channel MOS FET High Speed Power Switching REJ03G1042-0400 Previous: ADE-208-551B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.040 Ω typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AC-A


    Original     		2SK2928 REJ03G1042-0400 ADE-208-551B) PRSS0004AC-A O-220AB) 2SK2928 2SK2928-E PRSS0004AC-A PDF

    MMA6

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2920 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2920 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm a 6 .8 M A X . APPLICATIONS


    OCR Scan     		2SK2920 MMA6 PDF

    2SK2920

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2920 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2920 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 4 V Gate Drive


    OCR Scan     		2SK2920 2SK2920 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2927 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-550 Target Specification 1st. Edition Features • Low on-resistance R ds = 0.055 Q. typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 1 190


    OCR Scan     		2SK2927 ADE-208-550 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2925 L , 2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-549 Target Specification 1st. Edition Features • L ow on-resistance R ds = 0 .0 6 0 £2 typ. • H igh speed sw itch in g • 4 V gate drive d e v ic e can be driven from 5V source


    OCR Scan     		2SK2925 ADE-208-549 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2922 Silicon N Channel MOS FET UHF Power Amplifier HITACHI ADE-208-675 Z 1st. Edition Aug. 1998 Features • High power output, High gain, High efficiency PG = 8.0dB, Pout = 31 dBm, r|D = 57 %min. (f = 836.5MHz) • Compact package capable of surface mounting


    OCR Scan     		2SK2922 ADE-208-675 40815HITEC PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2926 L , 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features L ow on-resistance R ds(o„, = 0-042 i i typ. 4V gate drive devices. High speed switching Outline DPAK-2 1. 2. 3. 4. 1182 Gate Drain Source Drain ADE-208-535 1st. Edition


    OCR Scan     		2SK2926 ADE-208-535 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2920 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2920 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive Low Drain-Source ON Resistance : Rjjs (ON) = 0.56 fl (Typ.)


    OCR Scan     		2SK2920 PDF