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Toshiba America Electronic Components 2SK3075(TE12L,Q) Rf Fet, N-Ch, 30V, 5A, Smd; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5A; Power Dissipation:20W; Operating Frequency Min:-; Operating Frequency Max:520Mhz; No. Of Pins:4Pins; Operating Temperature Max:150°C Rohs Compliant: Yes \|Toshiba 2SK3075(TE12L, Q)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	2SK3075(TE12L,Q)	Cut Tape	884		1	1 $6.68 10 $5.61 100 $4.53 1000 $4.28 10000 $4.28	Buy Now
	2SK3075(TE12L,Q)	Reel			1,000	1 - 10 - 100 - 1000 $3.89 10000 $3.38	Buy Now
TME	2SK3075(TE12L,Q)				1	1 $13.4 10 $11.8 100 $9.99 1000 $9.99 10000 $9.99	Get Quote
EBV Elektronik	2SK3075(TE12L,Q)			27 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

2SK3075 Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK3075	Toshiba	Silicon N-channel MOS type field effect transistor for RF power MOSFET, for UHF and VHF band power amplifier	Original	PDF
2SK3075	Toshiba	2SK3075 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, 2-5N1A, 4 PIN, FET RF Power	Original	PDF
2SK3075	Toshiba	Field Effect Transistor Silicon N Channel MOS Type	Scan	PDF
2SK3075(TE12L,Q)	Toshiba	2SK3075 - Trans MOSFET N-CH 30V 5A 3-Pin PW-X T/R	Original	PDF

2SK3075 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF− and UHF−Band Power Amplifier Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These	Original	2SK3075	PDF
2SK3075 Abstract: 2SK3075 MOSFET TRANSISTOR Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF− and UHF−Band Power Amplifier Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These	Original	2SK3075 2SK3075 2SK3075 MOSFET TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Output Power : PO ≥ 7.5W Power Gain : GP ≥ 11.7dB Drain Efficiency : ηD ≥ 50% MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC	Original	2SK3075	PDF
2SK3075 MOSFET TRANSISTOR Abstract: No abstract text available Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Output Power : PO ≥ 7.5W Power Gain : GP ≥ 11.7dB Drain Efficiency : ηD ≥ 50% MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC	Original	2SK3075 961001EAA1 520MHz, 500mW 2SK3075 MOSFET TRANSISTOR	PDF
2SK3075 Abstract: 2SK3075 MOSFET TRANSISTOR TOSHIBA Semiconductor Reliability Handbook Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These	Original	2SK3075 2SK3075 2SK3075 MOSFET TRANSISTOR TOSHIBA Semiconductor Reliability Handbook Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA	PDF
2sk3075 Abstract: No abstract text available Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Output Power : PO ≥ 7.5W Power Gain : GP ≥ 11.7dB Drain Efficiency : ηD ≥ 50% MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC	Original	2SK3075 000707EAA1 520MHz, 500mW 2sk3075	PDF
Untitled Abstract: No abstract text available Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These	Original	2SK3075	PDF
Untitled Abstract: No abstract text available Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF− and UHF−Band Power Amplifier Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These	Original	2SK3075	PDF
2SK3075 Abstract: No abstract text available Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm l Output Power : PO ≥ 7.5W l Power Gain : GP ≥ 11.7dB l Drain Efficiency : ηD ≥ 50% MAXIMUM RATINGS Ta = 25°C	Original	2SK3075 000707EAA1 520MHz, 500mW 2SK3075	PDF
2SK3075 Abstract: 2-5N1A GP117 Text: 2SK3075 東芝電界効果トランジスタシリコンNチャネルMOS形 2SK3075 ○ VHF/UHF 帯電力増幅用ご注意本資料に掲載されている製品は通信機器向高周波電力増幅用に使用されることを意図しています。他の用途に使用することは意図もされていませ	Original	2SK3075 520MHz, 500mW 2SK3075 2-5N1A GP117	PDF
Untitled Abstract: No abstract text available Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These	Original	2SK3075	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
TA4029CTC Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X Text: 製品カタログ 2011-1 東芝半導体製品カタログ高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8	Original	BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF

JDV2S31CT Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000 Text: 製品カタログ 2009-9 東芝半導体製品カタログ高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。	Original	BCJ0003F BCJ0003E JDV2S31CT 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000	PDF
2sc5108 Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,	Original	BCE0003E 2sc5108 toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz	PDF
3sk catalog Abstract: TE85L Toshiba Text: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS	Original	BCE0003H 3sk catalog TE85L Toshiba	PDF
sec 2sc5088 Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and	Original	BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS	PDF
MT4S300T Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476 Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones	Original	BCE0003F MT4S300T TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476	PDF
MT4S300T Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors	Original	2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 Unit in mm RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER • • • Output Power Power Gain Drain Efficiency P0 =7.5W GP ^11.7dB 7D^50% M A X IM U M RATINGS Ta = 25°C	OCR Scan	2SK3075 961001EAA1 2200pF	PDF
Power MOSFET, toshiba Abstract: 2SK3075 Field Effect Transistor Silicon N Channel MOS vdss 600 MOSFET MARKING PQ Power MOSFET, P, toshiba 2SK3075 MOSFET TRANSISTOR mosfet vhf power amplifier 2 S K 3 0 Text: TOSHIBA 2SK3075 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE 2SK3075 RF POWER MOSFET Unit in mm FOR VHF- A N D U H F-B A N D POWER AMPLIFIER • • • Output Power Power Gain Drain Efficiency P0 =7.5W Gp= 11.7dB 7d ^ 5 0 % M A X IM U M RATINGS Ta = 25°C	OCR Scan	2SK3075 961001EAA1 520MHz Power MOSFET, toshiba 2SK3075 Field Effect Transistor Silicon N Channel MOS vdss 600 MOSFET MARKING PQ Power MOSFET, P, toshiba 2SK3075 MOSFET TRANSISTOR mosfet vhf power amplifier 2 S K 3 0	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 Unit in mm RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER Output Power Power Gain Drain Efficiency P O = 7 -5 W GP= 11.7dB 7d ^ 5 0 % M A X IM U M RATINGS Ta = 25°C	OCR Scan	2SK3075 961001EAA1 2200pF	PDF

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2SK3075 Search Results

2SK3075 Price and Stock

Toshiba America Electronic Components 2SK3075(TE12L,Q)

2SK3075 Datasheets (4)

2SK3075 Datasheets Context Search

Untitled

2SK3075

Untitled

2SK3075 MOSFET TRANSISTOR

2SK3075

2sk3075

Untitled

Untitled

2SK3075

2SK3075

Untitled

GT30F131

TA4029CTC

IGBT GT30F124

JDV2S31CT

2sc5108

3sk catalog

sec 2sc5088

MT4S300T

MT4S300T

GT30F124

Untitled

Power MOSFET, toshiba

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