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    2SK3077 Search Results

    2SK3077 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK3077 Toshiba 2SK3077 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, 2-2K1D, 4 PIN, FET RF Small Signal Original PDF
    2SK3077 Toshiba Original PDF
    2SK3077A Toshiba 2SK3077 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, 2-2K1D, 4 PIN, FET RF Small Signal Original PDF
    2SK3077A Toshiba High-frequency Junction FET Original PDF

    2SK3077 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK3077

    Abstract: No abstract text available
    Text: 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS GSM Unit: mm Output Power : PO = 15.0 dBmW (Min.) Gain : GP = 15.0 dB (Min.) Drain Efficiency : ηD = 20% (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    Original
    2SK3077 000707EAA1 2SK3077 PDF

    2SK3077

    Abstract: No abstract text available
    Text: 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS GSM (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use.


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    2SK3077 2SK3077 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3077A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3077A VHF/UHF Band Amplifier Applications Unit: mm • Output power: Po ≥ 20.5dBmW • Gain: Gp ≥ 10.5dB • Drain Efficiency: ηD ≥ 50% Maximum Ratings Ta = 25°C Characteristics


    Original
    2SK3077A PDF

    2Sk3077

    Abstract: No abstract text available
    Text: 2SK3077 東芝電界効果トランジスタ シリコン N チャネル MOS 形 2SK3077 ○ UHF 帯電力増幅用 単位: mm ご注意 本資料に掲載されている製品は通信機器向高周波電力増幅用に使 用されることを意図しています。他の用途に使用することは意図もされてい


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    2SK3077 030519TAA 2Sk3077 PDF

    2SK3077A

    Abstract: No abstract text available
    Text: 2SK3077A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3077A VHF/UHF Band Amplifier Applications Unit: mm • Output power: Po ≥ 20.5dBmW · Gain: Gp ≥ 10.5dB · Drain Efficiency: ηD ≥ 50% Maximum Ratings Ta = 25°C Characteristics


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    2SK3077A 2SK3077A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS GSM (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use.


    Original
    2SK3077 PDF

    2SK3077

    Abstract: No abstract text available
    Text: 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS GSM Unit: mm l Output Power : PO = 15.0 dBmW (Min.) l Gain : GP = 15.0 dB (Min.) l Drain Efficiency : ηD = 20% (Typ.) MAXIMUM RATINGS (Ta = 25°C)


    Original
    2SK3077 2SK3077 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3077A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3077A VHF/UHF Band Amplifier Applications Unit: mm • • • Output power: Po > = 20.5dBmW Gain: Gp > = 10.5dB Drain Efficiency: ηD > = 50% Maximum Ratings Ta = 25°C Characteristics


    Original
    2SK3077A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS GSM Unit: mm Output Power : PO = 15.0 dBmW (Min.) Gain : GP = 15.0 dB (Min.) Drain Efficiency : ηD = 20% (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    Original
    2SK3077 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS GSM Unit: mm Output Power : PO = 15.0 dBmW (Min.) Gain : GP = 15.0 dB (Min.) Drain Efficiency : ηD = 20% (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    Original
    2SK3077 961001EAA1 malfun2SK3077 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS GSM Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


    Original
    2SK3077 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    TA4029CTC

    Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
    Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8


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    BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    JDV2S31CT

    Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。


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    BCJ0003F BCJ0003E JDV2S31CT 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000 PDF

    2sc5108

    Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
    Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,


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    BCE0003E 2sc5108 toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz PDF

    3sk catalog

    Abstract: TE85L Toshiba
    Text: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS


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    BCE0003H 3sk catalog TE85L Toshiba PDF

    sec 2sc5088

    Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
    Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and


    Original
    BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS PDF

    MT4S300T

    Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
    Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones


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    BCE0003F MT4S300T TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476 PDF

    MT4S300T

    Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors


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    2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original
    2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    MT3S111P

    Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
    Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287


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    2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293 PDF

    2SK3077

    Abstract: No abstract text available
    Text: TO SH IBA 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS GSM • Output Power P q = 15.0 dBmW (Min.) • Gain Gp = 15.0 dB (Min.) • Drain Efficiency 7 d = 20% (Typ.) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan
    2SK3077 961001EAA1 2SK3077 PDF