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    2SK3301 Search Results

    2SK3301 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK3301 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3301 Toshiba FETs - Nch 700V Original PDF
    2SK3301 Toshiba Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS III) Scan PDF
    2SK3301 Toshiba Silicon N-channel MOS type field effect transistor for high speed, high voltage switching, switching regulator, DC-DC converter and motor drive applications Scan PDF
    2SK3301(2-7B1B) Toshiba 2SK3301 - TRANSISTOR 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7B1B, SC-64, 3 PIN, FET General Purpose Power Original PDF
    2SK3301(2-7B2B) Toshiba 2SK3301 - TRANSISTOR 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7B2B, SC-64, 3 PIN, FET General Purpose Power Original PDF
    2SK3301(2-7B3B) Toshiba 2SK3301 - TRANSISTOR 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7B3B, 3 PIN, FET General Purpose Power Original PDF
    2SK3301(2-7J1B) Toshiba 2SK3301 - TRANSISTOR 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7J1B, SC-64, 3 PIN, FET General Purpose Power Original PDF
    2SK3301(Q) Toshiba 2SK3301 - MOSFET N-CH 900V 1A SC-64 Original PDF
    2SK3301(TE16L1,NQ) Toshiba 2SK3301 - MOSFET N-CH 900V 1A SC-64 Original PDF

    2SK3301 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k3301

    Abstract: No abstract text available
    Text: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Low drain-source ON-resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)


    Original     		PDF 2SK3301 k3301

    k3301

    Abstract: No abstract text available
    Text: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Low drain-source on-resistance: RDS(ON) = 15 Unit: mm (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)


    Original     		PDF 2SK3301 k3301

    k3301

    Abstract: 2SK3301
    Text: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)


    Original     		PDF 2SK3301 k3301 2SK3301

    2SK3301

    Abstract: No abstract text available
    Text: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)


    Original     		PDF 2SK3301 2SK3301

    2SK3301

    Abstract: No abstract text available
    Text: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Unit: mm Low drain-source on-resistance: RDS(ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)


    Original     		PDF 2SK3301 2SK3301

    2SK3301

    Abstract: No abstract text available
    Text: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)


    Original     		PDF 2SK3301 2SK3301

    2SK3301

    Abstract: k3301
    Text: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)


    Original     		PDF 2SK3301 2SK3301 k3301

    k3301

    Abstract: No abstract text available
    Text: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)


    Original     		PDF 2SK3301 k3301

    k3301

    Abstract: 2SK3301 6nc3
    Text: 2SK3301 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSIII 2SK3301 ○ スイッチングレギュレータDC-DC コンバータ用 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 0.65 S (標準)


    Original     		PDF 2SK3301 K3301 2002/95/EC) k3301 2SK3301 6nc3

    k3301

    Abstract: No abstract text available
    Text: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Unit: mm Low drain-source on-resistance: RDS(ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)


    Original     		PDF 2SK3301 k3301

    k3301

    Abstract: 2SK3301
    Text: 2SK3301 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSIII 2SK3301 ○ スイッチングレギュレータDC-DC コンバータ用 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 0.65 S (標準)


    Original     		PDF 2SK3301 SC-64 K3301 2002/95/EC) k3301 2SK3301

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


    Original     		PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853

    fast tlp785

    Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
    Text: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W


    Original     		PDF SCE0024F fast tlp785 TK10A60D 5252 F solar tcv7116 TPH1400ANH

    MOSFET TOSHIBA 2SK2917

    Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
    Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6


    Original     		PDF DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    TA1343NG

    Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
    Text: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理


    Original     		PDF p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    2SK3301

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3301 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK3301 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SWITCHING REGULATOR, DC-DC CONVERTER APPLICATIONS • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK3301 VDD-400V, 2SK3301

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SK3301 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SH I 2SK3301 HIGH SPEED, HIGH VOLTAGE SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SW ITCHING REGULATOR, DC-DC CONVERTER APPLICATIONS • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK3301

    2SK3301

    Abstract: No abstract text available
    Text: T O S H IB A 2SK3301 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK3301 Unit in mm SWITCHING REGULATOR, DC-DC CONVERTER APPLICATIONS • • • • Low Drain-Source ON Resistance : Rd S (ON) = 15 O (Typ.) High Forward Transfer Admittance : |Yfs| = 0.65 S (Typ.)


    OCR Scan     		PDF 2SK3301