K3498
Abstract: K3498 Transistor 2SK3498 transistor k3498 k349
Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) · High forward transfer admittance: |Yfs| = 0.6 S (typ.)
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2SK3498
K3498
K3498 Transistor
2SK3498
transistor k3498
k349
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K3498
Abstract: 2SK3498 K3498 Transistor K349
Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: Yfs = 0.6 S (typ.)
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2SK3498
K3498
2SK3498
K3498 Transistor
K349
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K3498
Abstract: K3498 Transistor
Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)
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K3498
Abstract: K3498 Transistor 2SK3498
Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)
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2SK3498
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K3498 Transistor
2SK3498
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K3498
Abstract: K3498 Transistor transistor k3498 2SK3498 K349
Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)
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2SK3498
K3498
K3498 Transistor
transistor k3498
2SK3498
K349
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k3498
Abstract: 2SK3498 K3498 Transistor
Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)
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2SK3498
k3498
2SK3498
K3498 Transistor
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K3498
Abstract: K3498 Transistor 2SK3498 K349
Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)
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2SK3498
K3498
K3498 Transistor
2SK3498
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K3498
Abstract: 2SK3498
Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)
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K3498 Transistor
Abstract: k3498
Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) · High forward transfer admittance: ïYfsï = 0.6 S (typ.)
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2SK3498
K3498 Transistor
k3498
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Untitled
Abstract: No abstract text available
Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type -MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 • High forward transfer admittance: |Yfs| = 0.6 S (typ.) Unit: mm
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2SK3498
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K3498
Abstract: 2SK3498
Text: 2SK3498 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSV 2SK3498 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 単位: mm 1.7 ± 0. 2 6.8 MAX. 5.2 ± 0.2 : RDS (ON) = 4.0 Ω (標準)
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2SK3498
SC-64
K3498
2SK3498
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Untitled
Abstract: No abstract text available
Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)
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2SK3498
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k3498
Abstract: 2SK3498
Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)
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K3498
Abstract: No abstract text available
Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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Toshiba TMPA8873
Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6
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SCE0001C
S-167
SCE0001D
Toshiba TMPA8873
TA1343NG
TMPA8891
TMPA8893
tmpa8873
tmpa8859
TC90A96BFG
TB1318FG
TMPA8857
TMPA8853
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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BCE0017B
2SK2056
2SK1603
2sk1603 datasheet
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
transistor 2SK1603
2SK3561 equivalent
2SK2915 EQUIVALENT
1045y
2SK3569 equivalent
2SK1078
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017F
E-28831
BCE0017G
2SK3567 equivalent
2SK3569 equivalent
TPCA*8023
TK8A50D equivalent
2SK2056
2SK3878 equivalent
tpca8023
2SK941 equivalent
2SK3561 equivalent
2SK1603
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2SK3878 equivalent
Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)
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2SK2963
2SK2962
2SJ508
2SJ509
2SK3670
2SJ313
2SJ338
2SK2013
2SK2162
2SJ360
2SK3878 equivalent
2sk2611
2SK3759
2SK3878
2SK3869
2SK2013
toshiba POWER MOS FET 2sj 2sk
2SK3868
2SK3567 equivalent
2SK2718
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IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
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TA1343NG
Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
Text: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理
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p12p13
p17p18
p19p22
SCJ0001D
SCJ0001C
TA1343NG
TB1318FG
pal 011 A SPEAKER OUTPUT IC
TC90A96BFG
tmpa8859
Toshiba TMPA8873
TMPA8893
tmpa8873
TMPA8891
gt30f122
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2SK4207
Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
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BCJ0082B
BCJ0082A
2SK4207
to220sis
TPCA*8023
tk80A08K3
TPC8119
TK40A08K3
2SK4112
ssm3j16fs
2sk3568
TPC8A03
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TPCA*8064
Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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BCE0082B
TPCA*8064
TK12A10K3
TPCA8077
2SK3567 equivalent
SSM3J328
TPCA8077-H
TJ11A10M3
TK50E06K3A
TPCA*8077
TPCA8028
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General Semiconductor diode ed 7b
Abstract: IRL400
Text: TOSHIBA 2SK3498 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE t t - M O S V 2SK3498 TENTATIVE DC-DC CONVERTER,RELAY DRIVE AND MOTOR DRIVE APPLICATIONS UNIT:mm Low Drain - Source ON Resistance : R D S <oni =4.0i2(Typ.) High Forward Transfer Admittance : | Y fs |=0.6S(Typ.)
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2SK3498
General Semiconductor diode ed 7b
IRL400
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