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    2SK59 Price and Stock

    Rochester Electronics LLC 2SK596S-A

    JFET N-CH 1MA 3SPA
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    onsemi 2SK596S-A

    JFET N-CH 1MA 3SPA
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    Rochester Electronics 2SK596S-A 35,194 1
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    onsemi 2SK596S-B

    JFET N-CH 1MA 3SPA
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    onsemi 2SK596S-C

    JFET N-CH 1MA 3SPA
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    Rochester Electronics 2SK596S-C 5,757,383 1
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    Rochester Electronics LLC 2SK596S-C

    JFET N-CH 1MA 3SPA
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    2SK59 Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK59 InterFET N-Channel silicon junction field-effect transistor Original PDF
    2SK59 Unknown FET Data Book Scan PDF
    2SK59 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK590 Unknown FET Data Book Scan PDF
    2SK591 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK591 Unknown FET Data Book Scan PDF
    2SK591 NEC N-channel MOS feild effect power transistor. Scan PDF
    2SK593 Unknown GaAs N-Channel MES FET Scan PDF
    2SK593 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK593 Unknown FET Data Book Scan PDF
    2SK595 Unknown General Purpose Transistors Scan PDF
    2SK595 Unknown Scan PDF
    2SK595 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK595 Unknown FET Data Book Scan PDF
    2SK595 Sanyo Semiconductor N-Channel Junction Silicon FET, Capacitor Microphone Apps Scan PDF
    2SK595 Sanyo Semiconductor Scan PDF
    2SK596 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK596 Unknown Scan PDF
    2SK596 Unknown FET Data Book Scan PDF
    2SK596 Sanyo Semiconductor Scan PDF

    2SK59 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK105 Datasheet

    Abstract: 2SK105 2SK59 to-226aa 2sk105 jfet 2SK40 TO226AA 2SK17 2SK113 2d201
    Text: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions


    Original     		PDF 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 2SK105 Datasheet 2SK105 2SK59 to-226aa 2sk105 jfet 2SK40 TO226AA 2SK17 2SK113 2d201

    2SK596

    Abstract: 2SK596S
    Text: 2SK596S Ordering number : ENA0944 SANYO Semiconductors DATA SHEET N-channel Silicon Juncton FET 2SK596S Electret Condenser Microphone Applications Features • • • • Low output noise voltage : VNO=-110dB max VCC=4.5V, RL=1kΩ, Cin=15pF, VIN=0V, A curve


    Original     		PDF 2SK596S ENA0944 --110dB A0944-7/7 2SK596 2SK596S

    2SK105 DGS

    Abstract: 2SK105 V6010 2sj44
    Text: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions


    Original     		PDF 2SK17 IFN17 2SK40 IFN40 2SK59 IFN59 2SK105 IFN105 O-226AA 2SK105 DGS V6010 2sj44

    ENA0944

    Abstract: 2SK596S
    Text: Ordering number : ENA0944 2SK596S N-Channel JFET http://onsemi.com 20V, 140 to 350 A, 1.0mS, SPA Features • • • • Low output noise voltage : VNO=-110dB max VCC=4.5V, RL=1kΩ, Cin=15pF, VIN=0V, A curve Especiallysuited for use in condenser microphone for audio equipments and telephones


    Original     		PDF ENA0944 2SK596S --110dB A0944-7/7 ENA0944 2SK596S

    2SK146

    Abstract: 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2SK147 2sk152 equivalent Japanese Transistor
    Text: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions


    Original     		PDF 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 2SK146 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2SK147 2sk152 equivalent Japanese Transistor

    596S

    Abstract: 2SK596S 2SK596S-A A0944 2SK596SB 2SK596
    Text: 2SK596S Ordering number : ENA0944 SANYO Semiconductors DATA SHEET N-channel Silicon Juncton FET 2SK596S Electret Condenser Microphone Applications Features • • • • Low output noise voltage : VNO=-110dB max VCC=4.5V, RL=1kΩ, Cin=15pF, VIN=0V, A curve


    Original     		PDF ENA0944 2SK596S --110dB 7524-0vement, A0944-7/7 596S 2SK596S 2SK596S-A A0944 2SK596SB 2SK596

    Untitled

    Abstract: No abstract text available
    Text: 2SK597A Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)20Ê I(D) Max. (A)1.0m I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)125õ I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)170u


    Original     		PDF 2SK597A

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2sk2500

    Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    FET GAAS marking a

    Abstract: gaas fet marking a JT MARKING 2SK593
    Text: 2SK593 2SK593 GaAs N 7 + MES FET/GaAs N-Channel MES FET Sil] ;£Æ;SÏ#të;*IÈ^i|Î*gffl/RF Wide- band Low- noise Amplifier • ^ /F eatu res • E W ttf* b 50—1000MHz 0/ Wide band Amp.(50~1000MHz) • im & o / LowNF • 1£0/L o w IM ■ Absolute Maximum Ratings (Ta=25°C)


    OCR Scan     		PDF 2SK593 1000MHz 1000MHz) 14/Electrical 800MHz 600MHz f-800MHz f-600MHz FET GAAS marking a gaas fet marking a JT MARKING 2SK593

    2SK105

    Abstract: 2SK59 SGD 2SK40 2SK40 SGD 2SK17 2SK105 E interfet 2SK59 2SK17 SGD IFN105
    Text: E2 9-97 Jagranes^guivalenUF^n^ges SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFN105 Process NJ16 NJ16 NJ16 NJ16 Unit Limit N N N N Channel Channel Channel Channel V M in -2 0 -5 0 -3 0 -5 0 nA Max


    OCR Scan     		PDF 2SK17 2SK40 2SK59 2SK105 IFN17 IFN40 IFN59 IFN105 2SK59 SGD 2SK40 SGD 2SK105 E interfet 2SK17 SGD IFN105

    TT 2206

    Abstract: cvr 440 2SK595
    Text: 2SK595 2025 N9- Y * \ ,a * B c,») - - M t t t * * J l t %’ •FBET7ot^ «S. Assolute Ha» 1nun k A tin ça A * - - 5 #C un 1 1 •20 10 1 100 12S -55-025 r - k - r u o W£ V c o o r- > m t 1G ru !0 Po Tj TtlB s a n a ta * E l e c t x i c a l C h *X A ct- ri*tic*/T »- 2 S #C


    OCR Scan     		PDF 2SK595 2SK595U VCC14 23s24 3097JN TT 2206 cvr 440 2SK595

    PWS300

    Abstract: 2SK591 10VRM
    Text: 642 752 5 N E C N E C ELEC TRONI CS INC 98D 18840 DT-'J?-'// ELECTRONICS INC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK591 D E S C R IP T IO N The 2SK591 is N-Channel M O S Field Effect Power Transistor P A C K A G E D IM E N S IO N S designed for solenoid, motor and lamp driver.


    OCR Scan     		PDF 2SK591 2SK591 4575B5 T-39-11 --V-90 PWS300 10VRM

    Untitled

    Abstract: No abstract text available
    Text: E2 9-97 Japanese Equivalent JFET Types_ SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFNI 05 Process NJ16 NJ16 N J16 NJ16 Unit Limit N N N N Channel Channel Channel Channel -2 0


    OCR Scan     		PDF 2SK17 2SK40 2SK59 2SK105 IFN17 IFN40 IFN59

    d 2037 transistor

    Abstract: CAPACITOR MICROPHONE 2SK596 d 2037
    Text: f 2SK596 HI N -C h a n n e l J u n c tio n S ilic o n Field-Effect Transistor 2037 C a p a c it o r M i c r o p h o n e cwi» n p p iiu a ii Features • Especially suited for use in audio, telephone capacitor mlorophonea • Excellent voltage characteristic


    OCR Scan     		PDF 2SK596 V100uA 2SX596 15pFtSee Vina10mV 110Hz 4157TA d 2037 transistor CAPACITOR MICROPHONE 2SK596 d 2037

    JE 800 transistor

    Abstract: 2SK591 JE 33 TT 46 N 800 TC-6070 sje transistor
    Text: NEC m MOS ^ T iv r x Field E ffe c t P o w e r T r a n s is to r 2SK591 7 -M N ft^ ^ / < i i f f O S FE T l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK591ii, N f t i ' tl'WLB'^7-M O S FETT\ 5 V « « * IC iO ib KWM f - i i : mm


    OCR Scan     		PDF 2SK591 2SK591( JE 800 transistor 2SK591 JE 33 TT 46 N 800 TC-6070 sje transistor

    2SK591

    Abstract: RS39726
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK591 The 2SK591 is N-Channel MOS Field E ffect Power Transistor PACKAGE DIMENSIONS designed fo r solenoid, m o to r and lamp driver. in m illim eters inches FEATURES • 4 V Gate Drive — Logic level


    OCR Scan     		PDF 2SK591 2SK591 RS39726 1986M RS39726

    2SK591

    Abstract: No abstract text available
    Text: 6427525 N E C N E C ELECTRONICS ELECTRONICS INC 98D 18840 INC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK591 DESCRIPTIO N The 2SK591 is N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver. P A C K A G E DIMENSIONS in m illim e te r s in c h e s


    OCR Scan     		PDF 2SK591 2SK591 b427S25 T-39-11 --V-90

    2SK332

    Abstract: 2SC4072 2sk333 2sk1806 2sk377 j 2sc3064
    Text: SA* VO D P Dual P a c k a g e S e r i e s T h e S a n y o DP s e r i e s i n c l u d e t r an s is t or s , FETs for LF amp use as well as t r a n s i st o rs , F E Ts for HF amp use. B e c a u s e of t h e ir u n i q u e p a c k a g e design, they are c a p a b l e of b e i n g m o u n t e d e a s i l y and the c h a r a c t e r i s t i c s can


    OCR Scan     		PDF 2SK377 2SK597 2SK1806 2SA1237 2SC3064 5X-40 MT940128TR 2SK332 2SC4072 2sk333 2sk377 j 2sc3064

    2sk77

    Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
    Text: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications


    OCR Scan     		PDF 250mm 2SK212, 2SK315, 2SK544, 2SK669, 2SK1841 2SK2270. 2SK304, 2SK404, 2SK427, 2sk77 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j

    2SK595

    Abstract: DDCH230 TRANSISTOR IFW transistor BC 552
    Text: SANYO SEMICONDUCTOR CORP 32E D ? tn ? 0 7 b DDCH230 T“29“25. - N-Channel Junction Silicon FE T 2025 .Vafc-.l'^ ,11,Itim _A T Capacitor Microphone Applications 2206 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic


    OCR Scan     		PDF DDCH230 T-29-25 T-91-20 SC-43 2SK595 TRANSISTOR IFW transistor BC 552

    2SK582

    Abstract: 2SK600 2SK581 2SK609 2SK610 2SK606 2SK603 2sk611 2SK590 2SK604
    Text: 56 - f m & ffl tt £ & m ft K 2SK578 £ X V* it ? Jk V fë [* * £* (V) H E Pp/PcH (A) * (max) (A) (W) & <Ta=25eO) ¥f m I g ss Vg s (V) (min) (max) Vds (A) (A) (V) (min) (max) Vds (V) (V) (V) (min) (S) Id (A) •—Vt - Id (A) HS PSW MOS N E 150 DSS


    OCR Scan     		PDF 2SK578 2SK579 2SK580 2SK581 2SK582 10mfti 2SK809 2SK604 25dBtyp 100MHz 2SK582 2SK600 2SK609 2SK610 2SK606 2SK603 2sk611 2SK590 2SK604

    2SK596

    Abstract: sanyo 555
    Text: SANYO SEMICONDUCTOR CORP 3EE D 7T i7Q 7ti 0GGCÏ2 3 4 7 Features Especially suited for use in audio, telephone capacitor microphones Excellent voltage characteristic Excellent transient characteristic Adoption of FBET process Absolute Maximus Ratings at Ta=25°C


    OCR Scan     		PDF 00GTS34 T-29-25 T-91-20 SC-43 2SK596 sanyo 555