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    2SK829 Search Results

    2SK829 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK829 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK829 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK829 Unknown FET Data Book Scan PDF
    2SK829 NEC Fast switching N-channel silicon MOS field effect power transistor. Scan PDF

    2SK829 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK829 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition)100u Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)


    Original
    2SK829 PDF

    2sk2500

    Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original
    C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1 PDF

    transistor NEC 2SK2500

    Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    MIL-HDBK-217 C11178EJCV0IF transistor NEC 2SK2500 NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24 PDF

    uPC2581

    Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
    Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8


    Original
    PD7500 X10679EJAV0SG00 MF-1134) 1995P uPC2581 uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157 PDF

    2SK847

    Abstract: 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794
    Text: STI Type: 2SK696 Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 4.0 Trans Conductance Mhos: 1.2 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: TO-247


    Original
    2SK696 O-247 2SK719 2SK696A O-205AD/TO-39: 2N3374 2N3352 2SK847 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794 PDF

    2SK752

    Abstract: NEC diode 2SK754 3N125 3N126 2SK791 2SK755 3N105 3N134 82230
    Text: PART NUMBER INDEX Part Number Manufacturer 2SK752 2SK753 2SK754 2SK755 2SK756 2SK757 2SK758 2SK759 2SK760 2SK761 2SK762 2SK762A 2SK763 2SK763A 2SK764 2SK764A 2SK765 2SK765A 2SK766 2SK767 2SK768 2SK769 2SK770 2SK771 2SK772 2SK773 2SK774 2SK775 2SK776 2SK777


    Original
    2SK752 2SK753 2SK754 2SK755 2SK756 2SK757 2SK758 2SK759 2SK760 2SK761 NEC diode 3N125 3N126 2SK791 3N105 3N134 82230 PDF

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original
    RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 PDF

    2SK829

    Abstract: 2sk82
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK829 DESCRIPTION The 2SK829 is N-channel MOS Field E ffect Power Transistor PACKAGE DIMENSIONS designed fo r switching power supplies, DC-DC converters. FEATURES in m illim e te rs inches


    OCR Scan
    2SK829 1987M 2sk82 PDF

    2SK839

    Abstract: K818A K809A 2SK834 2SK828 2SK813 2SK814 2SK817 S09A 2SK810
    Text: - 70 - ito Hi M tt m € & m m 1 5e! V * S ?£ P d /P c h m * K A (V) * (A) * (W) Ig s s (max) (A) Vg s (V) te % (rain) (max) V d s (A) (A) (V) (min) (V) (Ta=25?C) (max) V d s (V) (V) (min) (S) Id (A) Vd s (V) Id (A) 2SK805 DDC, Motor-D MOS N E 200 DSS


    OCR Scan
    2SK805 2SK806 2SK807 2SK808 2SK809, 175nstyp 2SK826 2SK827 165nstyp 2SK839 K818A K809A 2SK834 2SK828 2SK813 2SK814 2SK817 S09A 2SK810 PDF

    hr460

    Abstract: 2SK829 transistor 115 25e s0245 diode AR S1 86
    Text: M O S ï ï ^ # 8 j ^ ' 0 ,7 - M O S Field E ffe c t P o w e r T ra n s is to r MOS F E T I t f f l 2 S K 829 Ü , l- f f ^ 'V - M O S -y + > ^ i m ^ m n x a * , s s i x - i mm F E T T * > * + > r u m , < t>3.2 + 0.2 15.7 MAX. D C -D C 3 > / -« -^ { 3 S jS -r l-.


    OCR Scan
    2SK829 29-Jtà 29-iaigB hr460 2SK829 transistor 115 25e s0245 diode AR S1 86 PDF