Untitled
Abstract: No abstract text available
Text: TC74HC4538AP/AF/AFN/AFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic Dual Retriggerable Monostable Multivibrator The TC74HC4538A is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2MOS
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TC74HC4538AP/AF/AFN/AFT
TC74HC4538AP
TC74HC4538AF
TC74HC4538AFN
TC74HC4538AFT
TC74HC4538A
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4538B
Abstract: TC74HC4538AF TC74HC4538AFN TC74HC4538AFT TC74HC4538AP
Text: TC74HC4538AP/AF/AFN/AFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic Dual Retriggerable Monostable Multivibrator The TC74HC4538A is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2MOS
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TC74HC4538AP/AF/AFN/AFT
TC74HC4538AP
TC74HC4538AF
TC74HC4538AFN
TC74HC4538AFT
TC74HC4538A
4538B
TC74HC4538AFT
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1T22A
Abstract: No abstract text available
Text: TC74HC4538AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC4538AFN Dual Retriggerable Monostable Multivibrator The TC74HC4538A is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent
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TC74HC4538AFN
TC74HC4538A
1T22A
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Untitled
Abstract: No abstract text available
Text: TC74HC4538AP/AF/AFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC4538AP,TC74HC4538AF,TC74HC4538AFT Dual Retriggerable Monostable Multivibrator The TC74HC4538A is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2MOS
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TC74HC4538AP/AF/AFT
TC74HC4538AP
TC74HC4538AF
TC74HC4538AFT
TC74HC4538A
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2T1-2T2
Abstract: 4538B TC74HC4538AF TC74HC4538AFN TC74HC4538AFT TC74HC4538AP
Text: TC74HC4538AP/AF/AFN/AFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic Dual Retriggerable Monostable Multivibrator The TC74HC4538A is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2MOS
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Original
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TC74HC4538AP/AF/AFN/AFT
TC74HC4538AP
TC74HC4538AF
TC74HC4538AFN
TC74HC4538AFT
TC74HC4538A
2T1-2T2
4538B
TC74HC4538AFT
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Untitled
Abstract: No abstract text available
Text: bbsa'm Philips Sem iconductors 0024012 2T2 • a p x N-channel silicon field-effect transistors N AUER PHIL IPS /DISCR ETE Preliminary specification J308/309/310 b?E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections
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J308/309/310
-TO-92
MCD212
bbS3831
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transistor 667
Abstract: BFR93A Philips FA 261 transistor bf 422 NPN BFR91A BFT93 BF 194 transistor transistor BF 257 transistor bf 184 BF 184 transistor
Text: WÊt 7 1 1 G û 2 t Philips Semiconductors OOb^mfl 2T2 • R H I N ^ P ro d u c ^ p e c ific a tio n NPN 6 GHz wideband transistor S= PINNING FEATURES DESCRIPTION PIN • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2
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BFR93A
BFT93.
transistor 667
BFR93A
Philips FA 261
transistor bf 422 NPN
BFR91A
BFT93
BF 194 transistor
transistor BF 257
transistor bf 184
BF 184 transistor
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etg36 040d
Abstract: 2SC2930 diode b6 k 450 ETG36-040C 2SD1071 2SD1073 2SD1726 2SD1797 2SD2350 2SD833
Text: T ra n sisto rs COLLHER Q SEMICONDUCTOR INC 4ÖE » • 2330712 OODlbOa 2T2 «COL High speed sw itch in g d arlin gton transistors • These are o f d arling to n typ e and are provided w ith a h ig h er hFE. • S w itchin g speed is in th e rang e o f tf=1|as.
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ETG36-040C
ETG36-040D
O-220F
ET375
2SC2930
etg36 040d
diode b6 k 450
2SD1071
2SD1073
2SD1726
2SD1797
2SD2350
2SD833
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2SD1071
Abstract: 2SD1073 2SD1726 2SD1797 2SD2350 2SD833 2SD834 2SD835 2SD916 ETG36-040C
Text: T ra n sisto rs COLLHER Q SEMICONDUCTOR INC 4ÖE » • 2330712 OODlbOa 2T2 «COL High speed sw itch in g d arlin gton transistors • These are o f d arling to n typ e and are provided w ith a h ig h er hFE. • S w itchin g speed is in th e rang e o f tf=1|as.
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ETG36-040C
ETG36-040D
O-220F
ET375
2SC2930
2SD1071
2SD1073
2SD1726
2SD1797
2SD2350
2SD833
2SD834
2SD835
2SD916
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Untitled
Abstract: No abstract text available
Text: BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCX19 = U l BCX20 = U2 P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6
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BCX19
BCX20
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BCX19
Abstract: lem HA BCX20
Text: BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCX19 = U l BCX20 = U2 P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6
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BCX19
BCX20
BCX19
lem HA
BCX20
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Untitled
Abstract: No abstract text available
Text: B 47 9 -9 7 IFN5911, IFN5912 N-CHANNEL DUAL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25eC icicpe * u « n r a . » n m .-n -n r.n -. . . Continuous Forward Gate Current Continuous Device Power Dissipation • WIDEBAND DIFFERENTIAL AMPLIFIERS
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IFN5911,
IFN5912
FN5911
IFN9912
NJ30L
00G07b7
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STP19N05L
Abstract: STP19N06L
Text: SGS-THOMSON STP19N05L STP19N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TENTATIVE DATA TYPE Id V d ss RDS on STP19N05L 50 V 0.1 n 19 A STP19N06L 60 V 0.1 £2 19 A • ■ . ■ ■ ■ . ■ AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED
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STP19N05L
STP19N06L
STP19N05L
STP19N06L
O-220
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3.5b zener diode
Abstract: diode so3 NDB6050L NDP6050L
Text: National April 1996 S e m i c o n d u c t o r " N D P 6050L/ NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using
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NDP6050L/
NDB6050L
ne8-59
00402bE
bSD1130
D0M02b3
3.5b zener diode
diode so3
NDB6050L
NDP6050L
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TC74HC4538P
Abstract: 2T2 transistor
Text: TC74HC4538P/F TC 7 4 H C 4 5 3 8 P /F DUAL R E T R IG G E R A B LE MONOSTABLE M U LTIV IBR A TO R The TC74HC4538 is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent
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TC74HC4538P/F
TC74HC4538
TC74HC4538P
2T2 transistor
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4538A
Abstract: Diode dx 2A 74HC4538A
Text: TOSHIBA TC74HC4538AP/AF/AFN Dual Monostable Multivibrator The TC74HC 4538A is a high speed CMOS MONOSTABLE MULTIVIBRATOR fa b rica te d w ith silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.
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TC74HC4538AP/AF/AFN
TC74HC
Duty/100
TC74HC/HCT
4538A
Diode dx 2A
74HC4538A
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T3D 67 diode
Abstract: Diode T3D 64 T3D 64 diode Diode T3D 54 T3D 77
Text: f Z 7 S G S -T H O M S O N Ä 7 # ¡ i» œ m O T o « S M 54HC4538 M 74HC4538 % DUAL RETRIGGERABLE MONOSTABLE M ULTIVIBRATOR • HIGHSPEED tpD = 25 ns (TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION STANDBY STATE lcc = 4|iA (MAX.) ATT a = 25 'C ACTIVE STATE Ice = 200 |iA (TYP.) AT Vcc = 5 V
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54HC4538
74HC4538
4538B
Duty/100
M54/M74HC4538
0DSS332
DG5S333
T3D 67 diode
Diode T3D 64
T3D 64 diode
Diode T3D 54
T3D 77
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Untitled
Abstract: No abstract text available
Text: N AtfER PHJLIPS/DISCRETE APX bbS3^31 D03TD32 b47 b'lE ]> BLV38 A VHF LINEAR PUSH-PULL POW ER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VH F television transmitters vision or sound amplifiers . Features
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D03TD32
BLV38
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Untitled
Abstract: No abstract text available
Text: HOA1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffused surfaces DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor
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HOA1397
HOA1397
HOA1397-001,
HOA1397-031,
SEP8507
SDP8407.
4551A30
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Philips 2222 capacitor
Abstract: philips capacitor philips capacitor 2222
Text: Philips Semiconductors bbS 3^31 Q Q S T f i ? 1! T35 M A P X ^ P r o d u c ts p e c ific a tio n HF/VHF power MOS transistor ^ — BLF177 N AMER PHILIPS/DISCRETE b^E D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control
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BLF177
OT121
Philips 2222 capacitor
philips capacitor
philips capacitor 2222
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1438A International IOR Rectifier dv/dt RATED HEXFET TRANSISTOR IRHM9064 REPETITIVE AVALANCHE AND P-CHANNEL RAD HARD Product Summary -60 Volt, 0.060£1, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology
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IRHM9064
4A554S2
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L4949E
Abstract: No abstract text available
Text: Æ * 7 S G S - T H O M S O N 7 # . iilD » [ilU i îW O @ i L 4 9 4 9 E MULTIFUNCTION VERY LOW DROP VOLTAGE REGULATOR PRODUCT PREVIEW • O PERATING DC SU PPLY VOLTAGE RANGE 5V - 28V ■ TRANSIENT SU P P LY VOLTAGE UP TO 40V ■ EXTREM ELY LOW Q U IESC EN T CURRENT
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100mA
L4949E
minidi27
S020L
L4949E
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tle 4258
Abstract: No abstract text available
Text: bOE d • fla 3 S b Q S a a s a io a SIEMENS i s t ■ s ie g SIErtENS AKTIENGESELLSCH 7 ^ 5 2 - li-1 ^ 5-V Low-Drop Voltage Regulator TLE 4258 Preliminary Data Bipolar 1C Features • • • • • • • • • Low-drop voltage Low quiescent current
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VPT05108
P-T0220-7-1
Q67000-A8238
TLE4258
a23Sb05
AE00033Ã
AED00333
tle 4258
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Untitled
Abstract: No abstract text available
Text: \ MT5C1005 883C 256K X 4 SRAM AUSTIN SEM IC O N D U C TO R, INC. SRAM 256Kx 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS • M IL-STD-883, Class B • Radiation tolerant consult factory FEATURES • • • • • High speed: 15, 20, 25, 35 and 45ns Battery Backup* 2V data retention
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MT5C1005
256Kx
IL-STD-883,
MT5CI005
T00211V
0D00SMS
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