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    2T2 TRANSISTOR Search Results

    2T2 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2T2 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TC74HC4538AP/AF/AFN/AFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic Dual Retriggerable Monostable Multivibrator The TC74HC4538A is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2MOS


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    PDF TC74HC4538AP/AF/AFN/AFT TC74HC4538AP TC74HC4538AF TC74HC4538AFN TC74HC4538AFT TC74HC4538A

    4538B

    Abstract: TC74HC4538AF TC74HC4538AFN TC74HC4538AFT TC74HC4538AP
    Text: TC74HC4538AP/AF/AFN/AFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic Dual Retriggerable Monostable Multivibrator The TC74HC4538A is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2MOS


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    PDF TC74HC4538AP/AF/AFN/AFT TC74HC4538AP TC74HC4538AF TC74HC4538AFN TC74HC4538AFT TC74HC4538A 4538B TC74HC4538AFT

    1T22A

    Abstract: No abstract text available
    Text: TC74HC4538AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC4538AFN Dual Retriggerable Monostable Multivibrator The TC74HC4538A is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent


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    PDF TC74HC4538AFN TC74HC4538A 1T22A

    Untitled

    Abstract: No abstract text available
    Text: TC74HC4538AP/AF/AFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC4538AP,TC74HC4538AF,TC74HC4538AFT Dual Retriggerable Monostable Multivibrator The TC74HC4538A is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2MOS


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    PDF TC74HC4538AP/AF/AFT TC74HC4538AP TC74HC4538AF TC74HC4538AFT TC74HC4538A

    2T1-2T2

    Abstract: 4538B TC74HC4538AF TC74HC4538AFN TC74HC4538AFT TC74HC4538AP
    Text: TC74HC4538AP/AF/AFN/AFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic Dual Retriggerable Monostable Multivibrator The TC74HC4538A is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2MOS


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    PDF TC74HC4538AP/AF/AFN/AFT TC74HC4538AP TC74HC4538AF TC74HC4538AFN TC74HC4538AFT TC74HC4538A 2T1-2T2 4538B TC74HC4538AFT

    Untitled

    Abstract: No abstract text available
    Text: bbsa'm Philips Sem iconductors 0024012 2T2 • a p x N-channel silicon field-effect transistors N AUER PHIL IPS /DISCR ETE Preliminary specification J308/309/310 b?E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections


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    PDF J308/309/310 -TO-92 MCD212 bbS3831

    transistor 667

    Abstract: BFR93A Philips FA 261 transistor bf 422 NPN BFR91A BFT93 BF 194 transistor transistor BF 257 transistor bf 184 BF 184 transistor
    Text: WÊt 7 1 1 G û 2 t Philips Semiconductors OOb^mfl 2T2 • R H I N ^ P ro d u c ^ p e c ific a tio n NPN 6 GHz wideband transistor S= PINNING FEATURES DESCRIPTION PIN • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2


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    PDF BFR93A BFT93. transistor 667 BFR93A Philips FA 261 transistor bf 422 NPN BFR91A BFT93 BF 194 transistor transistor BF 257 transistor bf 184 BF 184 transistor

    etg36 040d

    Abstract: 2SC2930 diode b6 k 450 ETG36-040C 2SD1071 2SD1073 2SD1726 2SD1797 2SD2350 2SD833
    Text: T ra n sisto rs COLLHER Q SEMICONDUCTOR INC 4ÖE » • 2330712 OODlbOa 2T2 «COL High speed sw itch in g d arlin gton transistors • These are o f d arling to n typ e and are provided w ith a h ig h er hFE. • S w itchin g speed is in th e rang e o f tf=1|as.


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    PDF ETG36-040C ETG36-040D O-220F ET375 2SC2930 etg36 040d diode b6 k 450 2SD1071 2SD1073 2SD1726 2SD1797 2SD2350 2SD833

    2SD1071

    Abstract: 2SD1073 2SD1726 2SD1797 2SD2350 2SD833 2SD834 2SD835 2SD916 ETG36-040C
    Text: T ra n sisto rs COLLHER Q SEMICONDUCTOR INC 4ÖE » • 2330712 OODlbOa 2T2 «COL High speed sw itch in g d arlin gton transistors • These are o f d arling to n typ e and are provided w ith a h ig h er hFE. • S w itchin g speed is in th e rang e o f tf=1|as.


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    PDF ETG36-040C ETG36-040D O-220F ET375 2SC2930 2SD1071 2SD1073 2SD1726 2SD1797 2SD2350 2SD833 2SD834 2SD835 2SD916

    Untitled

    Abstract: No abstract text available
    Text: BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCX19 = U l BCX20 = U2 P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6


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    PDF BCX19 BCX20

    BCX19

    Abstract: lem HA BCX20
    Text: BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCX19 = U l BCX20 = U2 P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6


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    PDF BCX19 BCX20 BCX19 lem HA BCX20

    Untitled

    Abstract: No abstract text available
    Text: B 47 9 -9 7 IFN5911, IFN5912 N-CHANNEL DUAL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25eC icicpe * u « n r a . » n m .-n -n r.n -. . . Continuous Forward Gate Current Continuous Device Power Dissipation • WIDEBAND DIFFERENTIAL AMPLIFIERS


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    PDF IFN5911, IFN5912 FN5911 IFN9912 NJ30L 00G07b7

    STP19N05L

    Abstract: STP19N06L
    Text: SGS-THOMSON STP19N05L STP19N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TENTATIVE DATA TYPE Id V d ss RDS on STP19N05L 50 V 0.1 n 19 A STP19N06L 60 V 0.1 £2 19 A • ■ . ■ ■ ■ . ■ AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED


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    PDF STP19N05L STP19N06L STP19N05L STP19N06L O-220

    3.5b zener diode

    Abstract: diode so3 NDB6050L NDP6050L
    Text: National April 1996 S e m i c o n d u c t o r " N D P 6050L/ NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using


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    PDF NDP6050L/ NDB6050L ne8-59 00402bE bSD1130 D0M02b3 3.5b zener diode diode so3 NDB6050L NDP6050L

    TC74HC4538P

    Abstract: 2T2 transistor
    Text: TC74HC4538P/F TC 7 4 H C 4 5 3 8 P /F DUAL R E T R IG G E R A B LE MONOSTABLE M U LTIV IBR A TO R The TC74HC4538 is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent


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    PDF TC74HC4538P/F TC74HC4538 TC74HC4538P 2T2 transistor

    4538A

    Abstract: Diode dx 2A 74HC4538A
    Text: TOSHIBA TC74HC4538AP/AF/AFN Dual Monostable Multivibrator The TC74HC 4538A is a high speed CMOS MONOSTABLE MULTIVIBRATOR fa b rica te d w ith silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.


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    PDF TC74HC4538AP/AF/AFN TC74HC Duty/100 TC74HC/HCT 4538A Diode dx 2A 74HC4538A

    T3D 67 diode

    Abstract: Diode T3D 64 T3D 64 diode Diode T3D 54 T3D 77
    Text: f Z 7 S G S -T H O M S O N Ä 7 # ¡ i» œ m O T o « S M 54HC4538 M 74HC4538 % DUAL RETRIGGERABLE MONOSTABLE M ULTIVIBRATOR • HIGHSPEED tpD = 25 ns (TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION STANDBY STATE lcc = 4|iA (MAX.) ATT a = 25 'C ACTIVE STATE Ice = 200 |iA (TYP.) AT Vcc = 5 V


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    PDF 54HC4538 74HC4538 4538B Duty/100 M54/M74HC4538 0DSS332 DG5S333 T3D 67 diode Diode T3D 64 T3D 64 diode Diode T3D 54 T3D 77

    Untitled

    Abstract: No abstract text available
    Text: N AtfER PHJLIPS/DISCRETE APX bbS3^31 D03TD32 b47 b'lE ]> BLV38 A VHF LINEAR PUSH-PULL POW ER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VH F television transmitters vision or sound amplifiers . Features


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    PDF D03TD32 BLV38

    Untitled

    Abstract: No abstract text available
    Text: HOA1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffused surfaces DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor


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    PDF HOA1397 HOA1397 HOA1397-001, HOA1397-031, SEP8507 SDP8407. 4551A30

    Philips 2222 capacitor

    Abstract: philips capacitor philips capacitor 2222
    Text: Philips Semiconductors bbS 3^31 Q Q S T f i ? 1! T35 M A P X ^ P r o d u c ts p e c ific a tio n HF/VHF power MOS transistor ^ — BLF177 N AMER PHILIPS/DISCRETE b^E D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control


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    PDF BLF177 OT121 Philips 2222 capacitor philips capacitor philips capacitor 2222

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.1438A International IOR Rectifier dv/dt RATED HEXFET TRANSISTOR IRHM9064 REPETITIVE AVALANCHE AND P-CHANNEL RAD HARD Product Summary -60 Volt, 0.060£1, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology


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    PDF IRHM9064 4A554S2

    L4949E

    Abstract: No abstract text available
    Text: Æ * 7 S G S - T H O M S O N 7 # . iilD » [ilU i îW O @ i L 4 9 4 9 E MULTIFUNCTION VERY LOW DROP VOLTAGE REGULATOR PRODUCT PREVIEW • O PERATING DC SU PPLY VOLTAGE RANGE 5V - 28V ■ TRANSIENT SU P P LY VOLTAGE UP TO 40V ■ EXTREM ELY LOW Q U IESC EN T CURRENT


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    PDF 100mA L4949E minidi27 S020L L4949E

    tle 4258

    Abstract: No abstract text available
    Text: bOE d • fla 3 S b Q S a a s a io a SIEMENS i s t ■ s ie g SIErtENS AKTIENGESELLSCH 7 ^ 5 2 - li-1 ^ 5-V Low-Drop Voltage Regulator TLE 4258 Preliminary Data Bipolar 1C Features • • • • • • • • • Low-drop voltage Low quiescent current


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    PDF VPT05108 P-T0220-7-1 Q67000-A8238 TLE4258 a23Sb05 AE00033Ã AED00333 tle 4258

    Untitled

    Abstract: No abstract text available
    Text: \ MT5C1005 883C 256K X 4 SRAM AUSTIN SEM IC O N D U C TO R, INC. SRAM 256Kx 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS • M IL-STD-883, Class B • Radiation tolerant consult factory FEATURES • • • • • High speed: 15, 20, 25, 35 and 45ns Battery Backup* 2V data retention


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    PDF MT5C1005 256Kx IL-STD-883, MT5CI005 T00211V 0D00SMS