2w, GaAs FET
Abstract: MGFK33V4045
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK33V4045 14.0 ~ 14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC
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MGFK33V4045
2w, GaAs FET
MGFK33V4045
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TC3967
Abstract: 2w, GaAs FET thermal conductivity ceramic FET
Text: TC3967 REV.1_04/27/2005 2W Packaged Self-Bias PHEMT GaAs Power FETs FEATURES • 2W Typical Output Power • 12.5dB Typical Linear Power Gain at 2.45GHz • High Linearity: IP3 = 43 dBm Typical • High Power Added Efficiency: Nominal PAE of 35% • Breakdown Voltage: BVDGO ≥ 15V
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TC3967
45GHz
TC3967
TC1601N
2w, GaAs FET
thermal conductivity ceramic FET
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK33V4045
MGFK33V4045
700mA
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK33V4045
MGFK33V4045
700mA
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0921A L & S BAND / 2W SMD non - matched DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm
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MGF0921A
MGF0921A
33dBm
17dBm
500mA
50pcs)
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0921A L & S BAND / 2W SMD non - matched DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm
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MGF0921A
MGF0921A
33dBm
17dBm
500mA
50pcs)
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Nec K 872
Abstract: 102528 NEC 2905 139492 NEZ1414-2E T-78 NEZ1011-2E 72248 121-138 26433
Text: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-2E,
NEZ1414-2E
NEZ1011-2E
NEZ1414-2E
NEZ1011-2E)
NEZ1414-2E)
Nec K 872
102528
NEC 2905
139492
T-78
72248
121-138
26433
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AE-POWER
Abstract: TC3967
Text: TC3967 REV2_20080516 2 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 2W Typical Output Power • 13dB Typical Linear Power Gain at 2.45GHz • • • High Linearity: IP3 = 43 dBm Typical High Power Added Efficiency: Nominal PAE of 35% Breakdown Voltage: BVDGO ≥ 15V
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TC3967
45GHz
TC3967
TC1601N
AE-POWER
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P0110009P
Abstract: gaas fet marking a ISO-14001 KP029J P0120009P RR0816 48dBm High power fet 2.4ghz
Text: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package
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P0120009P
48dBm
OT-89
17GHz
KP029J
P0120009P
P0110009P
gaas fet marking a
ISO-14001
KP029J
RR0816
48dBm High power fet 2.4ghz
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2w,GaAs FET
Abstract: 6401FN
Text: MA06401FN 2W GaAs Power Amplifier 4.5 - 6.9 GHz Advanced Information FEATURES •= •= •= •= •= •= •= •= Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical
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MA06401FN
6401FN
MA06401FN
2w,GaAs FET
6401FN
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P0110009P
Abstract: Susumu RL series part Marking KP029J P0120009P RR0816 marking c7 sot-89
Text: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure
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P0120009P
48dBm
OT-89
P0120009P
P0110009P
Susumu RL series part Marking
KP029J
RR0816
marking c7 sot-89
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ITT6401FM
Abstract: No abstract text available
Text: 2W GaAs Power Amplifier 4.5 - 7.1 GHz ITT6401FM FEATURES • • • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical 50 Ω Input/Output Impedance
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ITT6401FM
6401FM
ITT6401FM
360mA
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MwT-22
Abstract: 2w, GaAs FET
Text: MwT-22 2W High Linearity GaAs FET Preliminary Data Sheet June 2006 Features: • • • • • • • +33 dBm typical Output Power at 6 GHz 12 dB typical Small Signal Gain at 6 GHz 40% typical PAE at 6 GHz 0.5 x 4800 Micron Refractory Metal/Gold Gate Sorted into 100 mA Idss Bin Ranges
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MwT-22
MwT-22
2w, GaAs FET
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2w,GaAs FET
Abstract: ITT6401D
Text: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply
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ITT6401D
ITT6401D
360mA
2w,GaAs FET
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Q62702-L90
Abstract: marking K gaas fet gaas fet marking a gaas fet marking C
Text: CLY 5 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % ESD: Electrostatic discharge sensitive device,
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Q62702-L90
Q62702-L90
marking K gaas fet
gaas fet marking a
gaas fet marking C
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGFK33V4045 ! i 1 4 .0 — 14.5G H z BAND 2W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 3 V 4 0 4 5 is an internally impedance matched GaAs power FET especially designed fo r use in 14.0 ~ 14.5 GHz-band am plifiers. The herm etically sealed metal-ceramic
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MGFK33V4045
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NEC 2933
Abstract: 2912 nec NEC 2705 72248 NEC 2705 L 107
Text: DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high . output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
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NEZ1011-2E,
NEZ1414-2E
NEZ1011-2E
NEZ1414-2E
NEZ1011-2E)
NEZ1414-2E)
NEC 2933
2912 nec
NEC 2705
72248
NEC 2705 L 107
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 33V 4045 1 4 . 0 - 14.5GH z BAND 2W IN TERN ALLY MATCHED GaAs F E T DESCRIPTION The M G F K 3 3 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed fo r use in 14.0 ~ 14.5 GHz-band amplifiers. The herm etically sealed metal-ceramic
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FK33V4045
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MGFK33V4045
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 3 3 V 40 45 1 4 .0 — 14.5GHz BAND 2W INTERNALLY M ATCH ED GaAs F E T D E S C R IP T IO N The M G F K 3 3 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed fo r use in 1 4 .0 ~ 14.5
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MGFK33V4045
MGFK33V4045
77add
700mA
700mA)
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR CGaAs FET> M GFK33V4045 1 4 .0 — 14.5GHz BAND 2W INTERNALLY M ATCHED GaAs F E T DESCRIPTION The M G F K 3 3 V 4 0 4 5 is an in te rn a lly impedance matched GaAs power FET especially designed fo r use in 14.0 ~ 14.5 GHz-band am plifiers. The herm etically sealed metal-ceramic
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GFK33V4045
700mA)
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaA$ FET> MGFK33V4045 1 4 ,0 — 14.SGHz BAND 2W INTERNALLY M ATCHED GaAs F E T DESCRIPTION OUTLINE DRAWING The M G F K 3 3 V 4 0 4 5 is an in te rn a lly impedance matched U n i t : m i l l i m e t e r s inches GaAs power FET especially designed fo r use in 14.0 ^ 14.5
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MGFK33V4045
700mA)
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Untitled
Abstract: No abstract text available
Text: 2W GaAs Power Amplifier 4.5 - 7.1 GHz ITT6401FM / [ FEATURES r> \ j Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical 50 £2 Input/Output Impedance Self-Aligned MSAG MESFET Process
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ITT6401FM
ITT6401FM
360mA
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GaAsTEK
Abstract: No abstract text available
Text: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply
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ITT6401D
ITT6401D
loQ-360mA
GaAsTEK
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siemens gaas fet
Abstract: gaas fet marking J
Text: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163
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S0S163
Q62702-L90
615ms
i77mS-
417ps
siemens gaas fet
gaas fet marking J
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