AM29LV004T
Abstract: EDI7F33512V
Text: EDI7F33512V 512Kx32 FLASH DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.
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EDI7F33512V
512Kx32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29LV004T
512Kx8
EDI7F33512V
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Untitled
Abstract: No abstract text available
Text: EDI7F33512V 512Kx32 FLASH DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.
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EDI7F33512V
512Kx32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29LV004T
512Kx8
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Untitled
Abstract: No abstract text available
Text: EDI7F33512C White Electronic Designs 512Kx32 FLASH FIG.1 BLOCK DIAGRAMS The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are
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EDI7F33512C
512Kx32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29F040
512Kx8
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AM290F040
Abstract: No abstract text available
Text: White Electronic Designs EDI7F33512C 512Kx32 FLASH FEATURES 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM290F040 Flash Device Fast Read Access Time - 80-150ns 5V Only Reprogramming Sector Erase Architecture Uniform sectors of 64 Kbytes each
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512Kx32
512Kx32,
2x512Kx32
4x512Kx32
AM290F040
80-150ns
EDI7F433512C80BNC
EDI7F433512C90BNC
EDI7F433512C100BNC
EDI7F433512C120BNC
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512k x 8 chip block diagram
Abstract: AMD 705 AM29LV004T EDI7F33512V
Text: White Electronic Designs EDI7F33512V 512Kx32 FLASH FEATURES 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM29LV004T Flash Device Fast Read Access Time - 80ns 3V Only Reprogramming Flexible, Sector Architecture One 16Kbyte, two 8Kbyte, one 32Kbyte and
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EDI7F33512V
512Kx32
512Kx32,
2x512Kx32
4x512Kx32
AM29LV004T
16Kbyte,
32Kbyte
64Kbyte
EDI7F33512,
512k x 8 chip block diagram
AMD 705
EDI7F33512V
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Untitled
Abstract: No abstract text available
Text: EDI7F33512C 512Kx32 Flash DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.
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EDI7F33512C
512Kx32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29F040
512Kx8
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AM29LV004T
Abstract: EDI7F33512V
Text: EDI7F33512V 512Kx32 Flash 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4
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PDF
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EDI7F33512V
512Kx32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29LV004T
EDI7F33512V
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1.5528
Abstract: EDI7F33512C AM29F040 2192
Text: EDI7F33512C 512Kx32 Flash DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.
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EDI7F33512C
512Kx32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29F040
512Kx8
1.5528
EDI7F33512C
2192
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AM29F040
Abstract: EDI7F33512C
Text: EDI7F33512C 512Kx32 Flash 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.
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EDI7F33512C
512Kx32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29F040
EDI7F33512C
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AM29LV004T
Abstract: EDI7F33512V
Text: White Electronic Designs EDI7F33512V 512Kx32 FLASH FEATURES DESCRIPTION 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM29LV004T Flash Device Fast Read Access Time - 80ns 3V Only Reprogramming The EDI7F33512, EDI7F233512 and EDI7F433512 are
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EDI7F33512V
512Kx32
512Kx32,
2x512Kx32
4x512Kx32
AM29LV004T
16Kbyte,
32Kbyte
64Kbyte
EDI7F33512,
EDI7F33512V
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs EDI7F33512C 512Kx32 FLASH FEATURES 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM290F040 Flash Device Fast Read Access Time - 80-150ns 5V Only Reprogramming Sector Erase Architecture Uniform sectors of 64 Kbytes each
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512Kx32
512Kx32,
2x512Kx32
4x512Kx32
AM290F040
80-150ns
EDI7F433512C80BNC
EDI7F433512C90BNC
EDI7F433512C100BNC
EDI7F433512C120BNC
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AM29LV004T
Abstract: EDI7F33512V eco 9230
Text: EDI7F33512V SEDI, 512Kx32 Flash ELECTRONIC DESIGNS, IN C I 512Kx32 Flash Block Diagrams The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in
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EDI7F33512V
512Kx32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29LV004T
EDI7F33512V
eco 9230
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Untitled
Abstract: No abstract text available
Text: WHITE M IC R O E L E C T R O N IC S 2x512Kx32 5V FLASH SIM M WPF1M32A-90PSC5 PRELIMINARY* FEATURES • A ccess Tim e o f 90ns ■ ■ Packaging: ■ Organized as tw o banks o f 512Kx32 • 80-pin S IM M ■ C om m ercial T e m pe ratu re Range • The m odule is m a nufa cture d w ith e ig h t 512Kx8 CMOS
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2x512Kx32
WPF1M32A-90PSC5
512Kx32
80-pin
512Kx8
DDG1S40
1M32A
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332 Ic 8 pin
Abstract: 4X512K ic 331
Text: ^EDI E D I7F33S 12C 512Kx32 Flash EL£CTRONC CESGN& M C I Features 512Kx32 Flash Module 2,4,8 megabyte CMOS Flash Module Family Organization: 512Kx32 2x512Kx32 4x512Kx32 Fast Read Access Time-80ns Five Volt Only Reprogramming Internal Program Control and Timer
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512Kx32
2x512Kx32
4x512Kx32
Time-80ns
I7F33S
2x512Kx32
4x512Kx32
EDI7F33512CRev
332 Ic 8 pin
4X512K
ic 331
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PD2743
Abstract: WPF1M32A-90PSC5 80pin-SIMM AO523
Text: I/VHITE M IC R O E L E C T R O N IC S 2x512Kx32 5V FLASH S IM M WPF1M32A-90PSC5 P R E L IM IN A R Y * FEATURES • Access Time of 90ns ■ 100,000 Erase/Program Cycles ■ Packaging: ■ Organized as two banks of 512Kx32 • 80-pin S IM M ■ Commercial Temperature Range
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WPF1M32A-90PSC5
2x512Kx32
80-pin
512Kx8
64KBytes
Am29F040-90
512Kx32
foPF1M32A-90PSC5
80-PINSIMM
PD2743
WPF1M32A-90PSC5
80pin-SIMM
AO523
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Q180
Abstract: No abstract text available
Text: MITSUBISHI MEMORY CARD D YN A M IC RAM CARDS M F14M 1-J57A TXX 2x512Kx32bit D R A M Card Connector Type T w o -p iece 88-pin DESCRIPTION These D R A M C A R D s have been developed based on J E I D A D R A M C A R D G U I D E L I N E V e r . 2.1. T hese c a rd s a re m a d e u s in g in d u s t r y s t a n d a r d 512K
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2x512Kx32bit
1-J57A
88-pin
88pin
Q180
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Untitled
Abstract: No abstract text available
Text: W DI EDI7F33512V 512Kx32 Flash ELECTRONIC DESIGNS, IN C I 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in Block Diagrams
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EDI7F33512V
512Kx32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29LV004T
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI M EM O RY CARD D Y N A M IC R A M CAR D S 2x512Kx32bit D R A M Card MF14M1-J57ATXX Connector Type T w o -p ie c e 8 8 -p in D E S C R IP T IO N T hese D R A M C A R D s have been developed based on J E I D A D R A M C A R D G U ID E L IN E V er.2.1.
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2x512Kx32bit
MF14M1-J57ATXX
68P-004
35PIN
34PIN
68P-005
60P-004
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Untitled
Abstract: No abstract text available
Text: WDI EDI7F33512V 512Kx32 Flash ELECTRONIC DESIGNS INC 512KX32 Flash Block Diagrams TheEDI7F33512, EDI7F233512andEDI7F433512 EDI7F33512V-BNC are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectivel y. 7he modul es are based on AMD's AM29LV004T - 512Kx8 Flash Device in
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512KX32
TheEDI7F33512,
EDI7F233512andEDI7F433512
2x512Kx32
EDI7F33512V
EDI7F33512V-BNC
4x512Kx32
AM29LV004T
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Flash SIMM 72 29F040
Abstract: No abstract text available
Text: 2x512Kx32 5V FLASH S IM M p r e l im in a r y * FEATURES • Access Time of 90ns ■ 100,000 Erase/Program Cycles ■ Packaging: ■ Organized as tw o banks of 512Kx32 • 80-pin S I M M ■ Commercial Temperature Range • The module is manufactured w ith eight 512Kx8 C M O S
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2x512Kx32
80-pin
512Kx32
29F040
512Kx8
Flash SIMM 72 29F040
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI M EM O R Y CARD D Y N A M I C R A M CARDS 2x512Kx32à/f DRAM Card 1x512/fx32ô/Y DRAM Card MF12M1-J57ATXX " MF14M1-J57ATXX Connector Type Two-piece 88-p in D E S C R IP T IO N m o d e a n d Page m o d e f u n c t io n s a re a v a ila b le . These D R A M C A R D s have been developed based on
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1x512/fx32Ã
MF12M1-J57ATXX
MF14M1-J57ATXX
128ms/1024cycle)
0D270b3
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j2829
Abstract: No abstract text available
Text: WPF1M32A-90PSC5 M/HITE / M I C R O E L E C T R O N I C S 2x512Kx32 5V FLASH S IM M PRELIM INARY * FEATURES • Access Tim e of 90ns ■ 100,000 Erase/Program Cycles ■ Packaging: ■ Organized as tw o banks of 512Kx32 • 80-pin S IM M ■ Comm ercial Tem perature Range
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WPF1M32A-90PSC5
2x512Kx32
80-pin
512Kx32
29F040
512Kx8
64KBytes
512KxSC5
j2829
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI7F33512C 512KX32 Flash ELECTRONIC DESIGNS INC. 512Kx32 Flash The EDI7F33512, E D17F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP Block Diagrams
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EDI7F33512C
512KX32
EDI7F33512,
D17F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29F040
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AM290F040
Abstract: F3351 512KI x8 F335-12 f33512
Text: WDÌ EDI7F33512C 512Kx32Flash ELECTRONICDESJGW S.INC. 512Kx32 Flash TheE DI7F3351 EDI7F233512 and E DI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32respectively.Themodulesarebasedon AMD’s AM29F040-512Kx8 Flash Device in TSOP EDI7F33512CSNC
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EDI7F33512C
512Kx32Flash
512Kx32
DI7F3351
EDI7F233512
DI7F433512
2x512Kx32
4x512Kx32respectively
AM29F040-512Kx8
AM290F040
F3351
512KI x8
F335-12
f33512
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