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    2XF TRANSISTOR Search Results

    2XF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2XF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XX1000-BD

    Abstract: XX1000-BD-000V XX1000-BD-EV1 DM6030HK TS3332LD XR1002
    Text: 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler X1000-BD August 2007 - Rev 16-Aug-07 Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF X1000-BD 16-Aug-07 MIL-STD-883 XX1000-BD XR1002 XX1000-BD-000V XX1000-BD-EV1 XX1000 XX1000-BD XX1000-BD-000V XX1000-BD-EV1 DM6030HK TS3332LD

    2Xf transistor

    Abstract: 84-1LMI X1000 XR1002 XX1000 balun GHz broadband TRANSISTOR 2xf
    Text: 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler X1000 April 2006 - Rev 10-Apr-06 Features Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF X1000 10-Apr-06 MIL-STD-883 XR1002 2Xf transistor 84-1LMI X1000 XX1000 balun GHz broadband TRANSISTOR 2xf

    TRANSISTOR 2xf

    Abstract: No abstract text available
    Text: 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler X1000 September 2005 - Rev 01-Sep-05 Features Chip Device Layout Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive


    Original     		PDF 01-Sep-05 X1000 MIL-STD-883 XR1002 TRANSISTOR 2xf

    2Xf transistor

    Abstract: TRANSISTOR 2xf xf 2 6-pin B 1566 Transistor
    Text: 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler X1000 June 2006 - Rev 23-Jun-06 Features Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 23-Jun-06 X1000 MIL-STD-883 XR1002 2Xf transistor TRANSISTOR 2xf xf 2 6-pin B 1566 Transistor

    DM6030HK

    Abstract: TS3332LD XR1002 XX1000-BD XX1000-BD-000V XX1000-BD-EV1
    Text: 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler X1000-BD August 2007 - Rev 16-Aug-07 Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF X1000-BD 16-Aug-07 MIL-STD-883 XX1000-BD XR1002 XX1000-BD-000V XX1000-BD-EV1 XX1000 DM6030HK TS3332LD XX1000-BD XX1000-BD-000V XX1000-BD-EV1

    DM6030HK

    Abstract: TS3332LD XR1002 XX1000-BD XX1000-BD-000V XX1000-BD-EV1 X1000-BD N1014
    Text: 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler X1000-BD March 2007 - Rev 26-Mar-07 Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF X1000-BD 26-Mar-07 MIL-STD-883 XX1000-BD XR1002 XX1000-BD-000V XX1000-BD-EV1 XX1000 DM6030HK TS3332LD XX1000-BD XX1000-BD-000V XX1000-BD-EV1 X1000-BD N1014

    MMIC code D

    Abstract: 27 - 33 GHz GaAs Tripler MMIC bond pull test
    Text: 27 - 33 GHz GaAs Tripler MMIC 27 - 33 GHz Tripler Preliminary Data Sheet • • • • • Monolithic Microwave Integrated Circuit MMIC Frequency Tripler (coplanar design) Input/Output matched to 50 Ω Input frequency range: 9 GHz to 11 GHz Output frequency range: 27 GHz to 33 GHz


    Original     		PDF EHT09224 MMIC code D 27 - 33 GHz GaAs Tripler MMIC bond pull test

    "Frequency Tripler"

    Abstract: Frequency tripler 2f chip transistor
    Text: 27 - 33 GHz GaAs Tripler MMIC 27 - 33 GHz Tripler Preliminary Data Sheet • • • • • Monolithic Microwave Integrated Circuit MMIC Frequency Tripler (coplanar design) Input/Output matched to 50 Ω Input frequency range: 9 GHz to 11 GHz Output frequency range: 27 GHz to 33 GHz


    Original     		PDF EHT09224 "Frequency Tripler" Frequency tripler 2f chip transistor

    XX1001-BD-EV1

    Abstract: 20DBL0629 DM6030HK TS3332LD XX1001-BD XX1001-BD-000V
    Text: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier November 2008 - Rev 03-Nov-08 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 03-Nov-08 X1001-BD Mil-Std-883 XX1001-BD-000V XX1001-BD-EV1 XX1001 XX1001-BD-EV1 20DBL0629 DM6030HK TS3332LD XX1001-BD XX1001-BD-000V

    Untitled

    Abstract: No abstract text available
    Text: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier October 2006 - Rev 04-Oct-06 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 04-Oct-06 X1001-BD MIL-STD-883 XX1001-BD-000V XX1001-BD-000W XX1001-BD-EV1 XX1001

    20DBL0629

    Abstract: DM6030HK TS3332LD XX1001-BD XX1001-BD-000V XX1001-BD-000W XX1001-BD-EV1 X1001-BD 395 2XF
    Text: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier January 2007 - Rev 26-Jan-07 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 26-Jan-07 X1001-BD MIL-STD-883 XX1001-BD-000V XX1001-BD-000W XX1001-BD-EV1 XX1001 20DBL0629 DM6030HK TS3332LD XX1001-BD XX1001-BD-000V XX1001-BD-000W XX1001-BD-EV1 X1001-BD 395 2XF

    l0629

    Abstract: 20DBL0629 84-1LMI A102 395 2XF
    Text: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier September 2005 - Rev 01-Sep-05 20DBL0629 Features Chip Device Layout tio n Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression


    Original     		PDF 01-Sep-05 20DBL0629 MIL-STD-883 l0629 20DBL0629 84-1LMI A102 395 2XF

    Untitled

    Abstract: No abstract text available
    Text: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier January 2007 - Rev 26-Jan-07 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 26-Jan-07 X1001-BD MIL-STD-883 XX1001-BD-000V XX1001-BD-000W XX1001-BD-EV1 XX1001

    Untitled

    Abstract: No abstract text available
    Text: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier March 2008 - Rev 18-Mar-08 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 18-Mar-08 X1001-BD MIL-STD-883 deviceX1001-BD-000W XX1001-BD-EV1 XX1001

    SI9943DY

    Abstract: schematic diagram of mosfet based inverters Si9150CY AN710 logic level n channel MOSFET mpp schematic op amp lead-lag compensation pwm mosfet dc ac inverter 2N7002
    Text: AN710 Vishay Siliconix AN710 High-Efficiency Buck Converter for Notebook Computers INTRODUCTION Si9150CY IC DESCRIPTION Today, the untethering of electronic equipment has given rise to the need for lightweight power sources and power regulation. Extremely efficient buck converters answer one


    Original     		PDF AN710 Si9150CY Si9943DY schematic diagram of mosfet based inverters AN710 logic level n channel MOSFET mpp schematic op amp lead-lag compensation pwm mosfet dc ac inverter 2N7002

    Untitled

    Abstract: No abstract text available
    Text: NCP1201 PWM Current- Mode Controller for Universal Off- Line Supplies Featuring Low Standby Power with Fault Protection Modes Housed in SOIC-8 or PDIP-8 package, the NCP1201 enhances the previous NCP1200 series by offering a reduced optocoupler current with


    Original     		PDF NCP1201 NCP1201 NCP1200 NCP1201/D

    Untitled

    Abstract: No abstract text available
    Text: LM2698 www.ti.com SNVS153E – MAY 2001 – REVISED APRIL 2013 LM2698 SIMPLE SWITCHER 1.35A Boost Regulator Check for Samples: LM2698 FEATURES DESCRIPTION • • • The LM2698 is a general purpose PWM boost converter. The 1.9A, 18V, 0.2ohm internal switch


    Original     		PDF LM2698 SNVS153E LM2698 600kHz/1 25MHz

    Untitled

    Abstract: No abstract text available
    Text: LM2698 www.ti.com SNVS153E – MAY 2001 – REVISED APRIL 2013 LM2698 SIMPLE SWITCHER 1.35A Boost Regulator Check for Samples: LM2698 FEATURES DESCRIPTION • • • The LM2698 is a general purpose PWM boost converter. The 1.9A, 18V, 0.2ohm internal switch


    Original     		PDF LM2698 SNVS153E LM2698 400mA

    Untitled

    Abstract: No abstract text available
    Text: LM2698 www.ti.com SNVS153E – MAY 2001 – REVISED APRIL 2013 LM2698 SIMPLE SWITCHER 1.35A Boost Regulator Check for Samples: LM2698 FEATURES DESCRIPTION • • • The LM2698 is a general purpose PWM boost converter. The 1.9A, 18V, 0.2ohm internal switch


    Original     		PDF LM2698 SNVS153E LM2698 400mA

    ac voltage stabilizer circuit diagram

    Abstract: TDA3654 equivalent automatic change over switch circuit diagram pulse circuit SL 100 NPN Transistor TV horizontal Deflection Systems 25 automatic stabilizer circuit diagram BAX12 equivalent inverter 12 V to 220 V phase sequence detector
    Text: Philips Semiconductors Preliminary specification Synchronization circuit with synchronized vertical divider system for 60 Hz TDA2579C FEATURES Vertical part Synchronization and horizontal part • fV = 60 Hz M system • Horizontal sync separator and noise inverter


    Original     		PDF TDA2579C ac voltage stabilizer circuit diagram TDA3654 equivalent automatic change over switch circuit diagram pulse circuit SL 100 NPN Transistor TV horizontal Deflection Systems 25 automatic stabilizer circuit diagram BAX12 equivalent inverter 12 V to 220 V phase sequence detector

    TDA3654

    Abstract: TDA2579 TDA2579B TDA2579C V11L
    Text: INTEGRATED CIRCUITS DATA SHEET TDA2579C Synchronization circuit with synchronized vertical divider system for 60 Hz Preliminary specification File under Integrated Circuits, IC02 Philips Semiconductors January 1994 Philips Semiconductors Preliminary specification


    Original     		PDF TDA2579C TDA3654 TDA2579 TDA2579B TDA2579C V11L

    ac voltage stabilizer circuit diagram

    Abstract: automatic stabilizer circuit diagram stabiliser circuit diagram TDA2579B 10 switch coded 18 pin ic ac voltage stabiliser circuit diagram BAX12 equivalent SL 100 NPN Transistor TDA2579C V11L
    Text: INTEGRATED CIRCUITS DATA SHEET TDA2579C Synchronization circuit with synchronized vertical divider system for 60 Hz Preliminary specification File under Integrated Circuits, IC02 Philips Semiconductors January 1994 Philips Semiconductors Preliminary specification


    Original     		PDF TDA2579C SCD27 ac voltage stabilizer circuit diagram automatic stabilizer circuit diagram stabiliser circuit diagram TDA2579B 10 switch coded 18 pin ic ac voltage stabiliser circuit diagram BAX12 equivalent SL 100 NPN Transistor TDA2579C V11L

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS 15.1 Absolute maximum ratings_ M 37733M H B X X X F P ’s electrica l characte ristics are described below. For low voltage version, refer to section “18.4 Electrical c h a ra c te ris tic s .” For the latest data, inquire of addresses described last ^ “C O N TA C T A D D R E S S E S FOR FURTHER


    OCR Scan     		PDF 37733M P2o-P27, P4o-P47, P5o-P57,

    45200

    Abstract: impatt diode IMPATT
    Text: A fo C O W m an A M P com pany Abrupt Tuning Varactors MA45200 Series V 2.00 Case Styles Features • High Q £. • Low Leakage • A vailable in Chip Form • A vailable in C eram ic P a ck a g es • Low Post T u n in g Drift • Freq u en cy R an ge VHF - K u -B an d


    OCR Scan     		PDF MA45200 45200 impatt diode IMPATT