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    3 W RF POWER TRANSISTOR NPN Search Results

    3 W RF POWER TRANSISTOR NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    3 W RF POWER TRANSISTOR NPN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NESG260234

    Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		NESG260234 NESG260234-AZ NESG260234-T1 NESG260234 LLQ2021 NESG260234-T1 NESG260234-T1-AZ PDF

    NESG270034

    Abstract: ic nec 2501 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ 2012 NEC
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz


    Original     		NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ NESG270034 ic nec 2501 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ 2012 NEC PDF

    1005 Ic Data

    Abstract: NESG260234 IC MARKING 1005 1005 TRANSISTOR
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		NESG260234 NESG260234 NESG260234-AZ NESG260234-T1 NESG260234-T1-AZ PU10547EJ02V0DS LLQ2021 1005 Ic Data IC MARKING 1005 1005 TRANSISTOR PDF

    1005 Ic Data

    Abstract: NESG270034
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz


    Original     		NESG270034 NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ PU10577EJ02V0DS 1005 Ic Data PDF

    nec 2012

    Abstract: NESG270034 2012 NEC PU10577EJ01V0DS nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz


    Original     		NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ nec 2012 NESG270034 2012 NEC PU10577EJ01V0DS nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ PDF

    MRF449

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 30 W - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . . designed fo r power am plifier application in industrial, com ­ mercial and amateur radio equipment to 30 MHz. •


    OCR Scan     		PDF

    nec 2501

    Abstract: 2501 NEC ic nec 2501 NESG260234
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification PO = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		NESG260234 NESG260234 NESG260234-AZ NESG260234-T1 NESG260234-T1-AZ nec 2501 2501 NEC ic nec 2501 PDF

    NESG260234

    Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		NESG260234 NESG260234-AZ NESG260234-T1 NESG260234 LLQ2021 NESG260234-T1 NESG260234-T1-AZ PDF

    ic nec 2501

    Abstract: NESG270034 NESG270034-T1 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1-AZ IC MARKING 1005 5 pin nec microwave marking NEC rf transistor
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz


    Original     		NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ ic nec 2501 NESG270034 NESG270034-T1 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1-AZ IC MARKING 1005 5 pin nec microwave marking NEC rf transistor PDF

    nec 2501

    Abstract: marking NEC rf transistor ic nec 2501 PU10577EJ01V0DS nec 2012 2501 NEC NESG270034 nec npn rf 15 w RF POWER TRANSISTOR NPN
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz


    Original     		NESG270034 NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ nec 2501 marking NEC rf transistor ic nec 2501 PU10577EJ01V0DS nec 2012 2501 NEC nec npn rf 15 w RF POWER TRANSISTOR NPN PDF

    TIC 136 Transistor

    Abstract: mrf412
    Text: MOTOROLA SC ÎXSTRS/R "flT ]>F|k3l.72Si| 007flT71 5 FJ 89D 78971 6 3 6 7 2 5 4 M O T O R O L A SC XSTRS/R F t MOTOROLA - 3 D 3 SEMICONDUCTOR TECHNICAL DATA MRF412 The RF Line 70 W (PEP) — 30 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed primarily for applications as a high-power amplifier


    OCR Scan     		007flT71 MRF412 TIC 136 Transistor mrf412 PDF

    MRF477

    Abstract: MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H
    Text: MOTOROLA SC XSTRS/R F 4bE D L3ti72Sl4 □D'mb'iE 4 MOTOROLA MOTb T -S 3 -/Í SEMICONDUCTOR TECHNICAL DATA MRF477 T h e R F L in e 40 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILIC ON . . . designed prim arily for application as a high-power linear


    OCR Scan     		fci3ti72S4 MRF477 T0-220AB L3b72S4 T-33-11 Pout-40WPEP MRF477 MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H PDF

    MRF227

    Abstract: MRF227 equivalent 420 NPN Silicon RF Transistor transistor 7905 J 420 G
    Text: MOTOROLA SC XSTRS/R F 4bE D b3b72S4 0£m 50fl 7 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF227 The RF Line 3 W - 225 MHz R F POWER TRANSISTOR NPN SILIC ON NPN SILICON RF POWER TRANSISTOR . . . designed for 12.5 Volt large-signal power amplifier applica­


    OCR Scan     		b3b72S4 MRF227 T0-206A O-391 MRF227 MRF227 equivalent 420 NPN Silicon RF Transistor transistor 7905 J 420 G PDF

    ASI10539

    Abstract: ASI3003 147 B transistor
    Text: ASI3003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3003 is a common base transistor capable of providing 3.0 W Class-C RF output power @ 3.0 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 6.0 dB min. at 3 W / 3,000 MHz


    Original     		ASI3003 ASI10539 ASI3003 147 B transistor PDF

    9915 transistor

    Abstract: motorola rf Power Transistor beads ferroxcube 2204B IN4997 MRF412 qs-90
    Text: MOTOROLA SC ÌXSTRS/R FJ AT DE |b 3L72 SM DD7flT71 5 890 78971 & 3 6 7 2 S 4 M O T O R O L A SC CXSTRS/R F T ' 33 ' 5 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF412 The RF Line 7 0 W (P E P ) — 3 0 M H z NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR


    OCR Scan     		D07flT71 MRF412 -136V T-33-IS 9915 transistor motorola rf Power Transistor beads ferroxcube 2204B IN4997 MRF412 qs-90 PDF

    pepi c

    Abstract: TRANSISTOR D 2627 pepi cr MRF427 transistor D 2624 arco 469 trimmer capacitor arco TRIMMER capacitor 463 s49 transistor pepi TRIMMER capacitor 469
    Text: MOTOROLA SC XSTRS/R 4bE F D m b3b7254 00T4b4b ô T - 3 3 "O S MOTOROLA SEM ICONDUCTOR MRF427 MRF427A TECHNICAL DATA The RF Line 25 W ( P E P ) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . designed p r im a r ily fo r hig h -v o lta g e a p p lic a tio n s as a h ig h -p o w e r


    OCR Scan     		b3b7254 00T4b4b T-33-cR MRF427 MRF427A MRF427, T-33-09 pepi c TRANSISTOR D 2627 pepi cr transistor D 2624 arco 469 trimmer capacitor arco TRIMMER capacitor 463 s49 transistor pepi TRIMMER capacitor 469 PDF

    pepi c

    Abstract: MRF426
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF426 The RF Line 25 W PEPI - 3 0 M H z RF POWER TRANSISTOR N P N S IL IC O N NPN SILICO N RF POWER TRANSISTOR . . .designed for high gain driver and o u tp u t linear am plifier stages in 1.5 to 3 0 M H z H F /S S B equipm ent.


    OCR Scan     		MRF426 pepi c MRF426 PDF

    MRF317

    Abstract: transistor MRF317
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed prim arily for w ideband large-signal output am plifier stages in 3 0 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W


    OCR Scan     		Carrier/120 MRF317 transistor MRF317 PDF

    MRF262

    Abstract: MRF261 MRF260 MRF262 equivalent MRF264 J243 BH Rf transistor motorola rf Power Transistor TIC 136 Transistor motorola rf device
    Text: I MOTOROLA SC XSTRS/R F 4 bE b3b?554 00^4541 5 D MOTOROLA -T-33» SEMICONDUCTOR TECHNICAL DATA -cn MRF261 The RF Line 10 W 1 3 6 -1 7 5 M Hz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . desig n ed fo r 12.5 V o lt VHF large-signal p o w e r a m p lifie r a p p li­


    OCR Scan     		MRF261 O-220AB MRF260 MRF262 MRF264 OOT4544 T-33-07 MRF261 MRF262 equivalent J243 BH Rf transistor motorola rf Power Transistor TIC 136 Transistor motorola rf device PDF

    MRF458

    Abstract: MRF458 motorola MRF458A 79023 79024 1N4997 56-590-65/3B VK200 W-30 transistor s46
    Text: MOTOROL A sc -c xstrs / r f AT > DE | b B t i 7 a S 4 89D 79021 6 3 6 7 2 5 4 MOTOROLA SC <XSTRS/R F DOTTDSl D “T - 3 3 - / 5 MOTOROLA • SEM ICONDUCTOR MRF458 MRF458A TECHNICAL DATA T h e R F L in e 80 W - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR


    OCR Scan     		MRF458, MRF458A 007TD24 DT-33 MRF458 MRF458 motorola MRF458A 79023 79024 1N4997 56-590-65/3B VK200 W-30 transistor s46 PDF

    MRF421MP

    Abstract: MRF-421MP MRF421 transistor tic 698
    Text: MOTOROLA SEMICONDUCTOR MRF421 MRF421MP TECHNICAL DATA The RF Line 100 W PEP - 3 0 MHz RF POWER TRANSISTORS NPN SILIC O N NPN SILICO N RF POWER TRANSISTOR . . . designed prim arily for application as a high-power linear ampli­ fier from 2.0 to 30 MHz. Specified 1 2.5 V o lt, 30 MHz Characteristics Output Power = 100 W (PEP)


    OCR Scan     		MRF421 MRF421MP MRF421, MRF421MP MRF-421MP transistor tic 698 PDF

    MRF604

    Abstract: MRF-604 MM531
    Text: MOTOROLA SC XSTRS/R F MbE D b3b?2SM 00^4004 MOTOROLA G T -3 -ä -c e . • SEMICONDUCTOR TECHNICAL DATA MRF604 The R F Line 1.0 W - 175 M H z NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR NPN SILICON . . . designed for 12.5 Volt VH F large-signal amplifier applications


    OCR Scan     		MRF604 175MHz) MRF604 MRF-604 MM531 PDF

    3B2S

    Abstract: MRF428
    Text: M O T OR O L A SC XSTRS/R 4bE D F L,3b72S4 OOmbSD T MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF428 The RF Line 150 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN S IL IC O N NPN SILICO N R F POWER TRANSISTOR . . . designed prim arily fo r high-voltage applications as a high-power


    OCR Scan     		3b72S4 MRF428 T--33--13 3B2S MRF428 PDF

    transistor 7905

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R 4bE F D • b3b?2S4 00=14326 2 « flO T b -r-3 2 > " 0 = > MOTOROLA ■ SEM ICONDUCTOR TECHNICAL DATA T h e R F L in e 4 W — 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 V olt large-signal power amplifier applications


    OCR Scan     		PDF