3 W RF POWER TRANSISTOR NPN 5.8 GHZ Search Results

3 W RF POWER TRANSISTOR NPN 5.8 GHZ Result Highlights (5)

Part	Manufacturer	Description
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

3 W RF POWER TRANSISTOR NPN 5.8 GHZ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
R2C TRANSISTOR Abstract: No abstract text available Text: ERICSSON ^ PTB 20125 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended tor 26 Vdc class AB operation from 1,8 to 2.0 GHz. Rated at 100 w atts PEP minimum output power, it is specifically intended for operation as a	OCR Scan		PDF
3 w RF POWER TRANSISTOR NPN 5.8 ghz Abstract: RF TRANSISTOR 2.5 GHZ s parameter ZL+58 Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz	Original	NESG3031M14 NESG3031M14 NESG3031M14-A PU10415EJ04V0DS 3 w RF POWER TRANSISTOR NPN 5.8 ghz RF TRANSISTOR 2.5 GHZ s parameter ZL+58	PDF
Johanson Piston Trimmer Abstract: G200 RF TRANSISTOR 2GHZ Text: e PTB 20125 100 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended for 26 Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP minimum output power, it is specifically intended for operation as a	Original	1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer G200 RF TRANSISTOR 2GHZ	PDF
BFU725F Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU725F OT343F JESD625-A BFU725F germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power	PDF
transistor marking T1k ghz Abstract: NESG3031M05-A NESG3031M05 3 w RF POWER TRANSISTOR NPN 5.8 ghz NESG3031M05-T1-A Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz	Original	NESG3031M05 NESG3031M05 NESG3031M05-A PU10414EJ04V0DS transistor marking T1k ghz 3 w RF POWER TRANSISTOR NPN 5.8 ghz NESG3031M05-T1-A	PDF
transistor marking N1 Abstract: BFU725F JESD625-a LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 — 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU725F/N1 OT343F JESD625-A BFU725F transistor marking N1 LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave	PDF
Untitled Abstract: No abstract text available Text: BFU610F NPN wideband silicon RF transistor Rev. 2 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION	Original	BFU610F OT343F JESD625-A	PDF
BFU725F Abstract: germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference JESD625-A Germanium power Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 02 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU725F OT343F JESD625-A BFU725F germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference Germanium power	PDF
BFU610F Abstract: bfu6 NXP Bluetooth IC JESD625-A BFU610 Text: BFU610F NPN wideband silicon RF transistor Rev. 2 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION	Original	BFU610F OT343F JESD625-A BFU610F bfu6 NXP Bluetooth IC BFU610	PDF
BFU660F Abstract: sdars JESD625-A 25CCBS Text: BFU660F NPN wideband silicon RF transistor Rev. 1 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION	Original	BFU660F OT343F JESD625-A BFU660F sdars 25CCBS	PDF
germanium transistor ac 125 Abstract: No abstract text available Text: BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU730F OT343F JESD625-A germanium transistor ac 125	PDF
transistor marking N1 Abstract: LNB ka band Germanium power Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 — 3 November 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU725F/N1 OT343F JESD625-A BFU725F transistor marking N1 LNB ka band Germanium power	PDF
BFU730F Abstract: JESD625-A 555 ic Germanium power Text: BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU730F OT343F JESD625-A BFU730F 555 ic Germanium power	PDF
Untitled Abstract: No abstract text available Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU760F OT343F JESD625-A	PDF

DRO lnb Abstract: JESD625-A BFU630 BFU630F Text: BFU630F NPN wideband silicon RF transistor Rev. 1 — 15 December 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION	Original	BFU630F OT343F JESD625-A DRO lnb BFU630 BFU630F	PDF
BFU760F Abstract: bfu760 JESD625-A dielectric resonator oscillator germanium transistor table Germanium power Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU760F OT343F JESD625-A BFU760F bfu760 dielectric resonator oscillator germanium transistor table Germanium power	PDF
JESD625-A Abstract: BFU710F DRO lnb Germanium power Text: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU710F OT343F JESD625-A BFU710F DRO lnb Germanium power	PDF
Untitled Abstract: No abstract text available Text: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU710F OT343F JESD625-A	PDF
Ericsson 20082 Abstract: No abstract text available Text: ERICSSON ^ PTB 20082 15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion	OCR Scan	Collector-91 Ericsson 20082	PDF
s3331 Abstract: No abstract text available Text: Hi bbSBTBl 0031SSD flM7 M A P X Philips S em iconductors Product specification NPN 12 GHz wideband transistor BFQ33C N AMER PHILIPS/DISCRETE DESCRIPTION b^E T> PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT 173X micro-stripline envelopes, primarily	OCR Scan	0031SSD BFQ33C OT173 s3331	PDF
Transistor 8c4 Abstract: amplifier TRANSISTOR 12 GHZ js t31 sA 673 transistor TRANSISTOR 618 transistor 1248 BFQ33C TRANSISTOR 12 GHZ GQH543T TRANSISTOR BO 345 Text: Philips Sem iconductors Product specification BFQ33C NPN 12 GHz wideband transistor PHILIPS INT ERNATIONAL DESCRIPTION SbE ]> 711DÔ5t. G Ü H 5 4 3 T 5 b7 • P H I N PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT173X micro-slripline envelopes, primarily	OCR Scan	BFQ33C 711Dfi5t. GQH543T OT173 OT173X OT173X. Transistor 8c4 amplifier TRANSISTOR 12 GHZ js t31 sA 673 transistor TRANSISTOR 618 transistor 1248 BFQ33C TRANSISTOR 12 GHZ TRANSISTOR BO 345	PDF
TRANSISTOR ph 618 Abstract: transistor 911 TRANSISTOR 618 BFQ33C 1383 transistor BFQ33 transistor 1005 2G Text: Philips Semiconductors Product specification BFQ33C NPN 12 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE ]> 711DÔ5t. G0H543T 5b7 • P H I N PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT173X micro-stripline envelopes, primarily	OCR Scan	OT173 OT173X BFQ33C G0H543T figure076 711DfiEfci TRANSISTOR ph 618 transistor 911 TRANSISTOR 618 BFQ33C 1383 transistor BFQ33 transistor 1005 2G	PDF
BFU610F Abstract: SOT343F germanium rf transistor germanium power devices corporation Mifare PLUS X Germanium power Text: BFU610F NPN wideband silicon germanium RF transistor Rev. 01 — 17 June 2010 Objective data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU610F OT343F BFU610F SOT343F germanium rf transistor germanium power devices corporation Mifare PLUS X Germanium power	PDF
c38 transistor Abstract: 3 w RF POWER TRANSISTOR NPN 5.8 ghz Text: ERICSSON ^ PTB 20125 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20125 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation across the 1.8 to 2.0 GHz band. Rated at 100 w atts PEP minim um output power, it is specifically intended for	OCR Scan		PDF

3 W RF POWER TRANSISTOR NPN 5.8 GHZ Search Results

3 W RF POWER TRANSISTOR NPN 5.8 GHZ Result Highlights (5)

3 W RF POWER TRANSISTOR NPN 5.8 GHZ Datasheets Context Search

R2C TRANSISTOR

3 w RF POWER TRANSISTOR NPN 5.8 ghz

Johanson Piston Trimmer

BFU725F

transistor marking T1k ghz

transistor marking N1

Untitled

BFU725F

BFU610F

BFU660F

germanium transistor ac 125

transistor marking N1

BFU730F

Untitled

DRO lnb

BFU760F

JESD625-A

Untitled

Ericsson 20082

s3331

Transistor 8c4

TRANSISTOR ph 618

BFU610F

c38 transistor